PXAC261002FCV1R250XTMA1 [INFINEON]
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 â 2690 MHz;型号: | PXAC261002FCV1R250XTMA1 |
厂家: | Infineon |
描述: | Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 â 2690 MHz |
文件: | 总8页 (文件大小:162K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PXAC261002FC
Thermally-Enhanced High Power RF LDMOS FET
100 W, 28 V, 2490 – 2690 MHz
Description
The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric
design intended for use in multi-standard cellular power amplifier
applications in the 2496 to 2690 MHz frequency band. Features
include dual-path design, high gain and a thermally-enhanced pack-
age with earless flanges. Manufactured with Infineon's advanced
PXAC261002FC
Package H-37248-4
LDMOS process, this device provides excellent thermal performance
and superior reliability.
Features
Two-carrier WCDMA Drive-up
VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V,
ƒ = 2590 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz, Doherty Fixture
•
•
Broadband internal input and output matching
Asymmetric design
- Main: P1dB = 40 W Typ
- Peak: P1dB = 70 W Typ
17
16
15
14
13
12
11
60
50
40
30
20
10
0
•
Typical Pulsed CW performance, 2590 MHz, 26 V,
160 µs, 10% duty cycle, Doherty Configuration
- Output power at P
- Output power at P
= 46.5 dBm
= 50.1 dBm
Gain
1dB
3dB
•
•
Capable of handling 10:1 VSWR @28 V, 100 W
(CW) output power
Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
•
•
Low thermal resistance
Efficiency
Pb-free and RoHS compliant
c261002fc_g1
29
33
37
41
45
49
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production Doherty test fixture)
V
DD
= 26 V, I
= 210 mA, P
= 18 W avg, V
= 1.4 V, ƒ = 2550 MHz, ƒ = 2590 MHz, 3GPP signal, 3.84 MHz channel
DQ
OUT
GS2
1
2
bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
14.1
46
Typ
15.1
49
Max
—
Unit
dB
G
ps
Drain Efficiency
ηD
—
%
Intermodulation Distortion
IMD
—
–22
—
–21
—
dBc
dB
Output PAR at 0.01% probability on CCDF
OPAR
7.5
(one-carrier WCDMA, 2585 MHz, 10 dB PAR)
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 8
Rev. 03.3, 2016-06-15
PXAC261002FC
DC Characteristics (each side)
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V(
BR)DSS
DS
V
= 28 V, V = 0 V
I
I
—
1
µA
µA
µA
Ω
DS
DS
GS
DSS
DSS
V
= 63 V, V = 0 V
—
—
10
1
GS
Gate Leakage Current
V
GS
= 10 V, V = 0 V
DS
I
—
—
GSS
On-State Resistance
(main)
(peak)
V
GS
= 10 V, V = 0.1 V
DS
R
DS(on)
R
DS(on)
—
0.3
0.16
2.6
1.4
—
V
GS
= 10 V, V = 0.1 V
DS
—
—
Ω
Operating Gate Voltage (main)
(peak)
V
= 26 V, I
= 26 V, I
= 210 mA
= 0 mA
V
GS
2.1
0.9
3.1
1.9
V
DS
DS
DQ
DQ
V
V
GS
V
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
–6 to +10
0 to +32
225
V
GS
DD
V
V
Junction Temperature
Storage Temperature Range
Thermal Resistance (Doherty, T
T
°C
J
T
STG
–65 to +150
0.6
°C
= 70°C, 100 W CW)
R
θ
°C/W
CASE
JC
Ordering Information
Type and Version
Order Code
Package and Description
Shipping
PXAC261002FC V1 R0
PXAC261002FCV1R0XTMA1
H-37248-4, open-cavity,
push-pull, earless flange
Tape & Reel, 50 pcs
PXAC261002FC V1 R250
PXAC261002FC V1R250XTMA1
H-37248-4, earless flange
push-pull, earless flange
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 03.3, 2016-06-15
PXAC261002FC
Typical Performance (data taken in a production Doherty test fixture)
Two-carrier WCDMA Drive-up
VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V,
ƒ = 2590 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
Two-carrier WCDMA Drive-up
VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-10
-20
-30
-40
-50
-60
60
50
40
30
20
10
-18
-22
-26
-30
-34
-38
-42
2550MHz IMDL
2550MHz IMDU
2585MHz IMDL
2585MHz IMDU
2590MHz IMDL
2590MHz IMDU
c261002fc_g3
IMD Low
IMD Up
ACPR
Efficiency
c261002fc_g2
29
33
37
41
45
49
29
34
39
44
49
Output Power (dBm)
Output Power (dBm)
CW Performance
at various VDD
IDQ = 210 mA, ƒ = 2590 MHz
Power Sweep, CW
VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V
16.5
70
16.5
15.5
14.5
13.5
12.5
11.5
10.5
70
60
50
40
30
20
10
15.5
14.5
13.5
12.5
11.5
10.5
Gain
60
50
40
30
20
10
Gain
Efficiency
Efficiency
2550 MHz
VDD = 24 V
2585 MHz
2590 MHz
V
V
DD = 28 V
DD = 32 V
c261002fc_g4
c261002fc_g5
29
33
37
41
45
49
53
29
33
37
41
45
49
53
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 8
Rev. 03.3, 2016-06-15
PXAC261002FC
Typical Performance (cont.)
Small Signal CW Performance
Gain & Input Return Loss
VDD = 28 V, IDQ = 210 mA
17
16
15
14
13
0
Gain
-5
-10
-15
-20
IRL
c261002fc_g6
2500
2550
2600
2650
2700
2750
Frequency (MHz)
Load Pull Performance
Main Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, V
= 28 V, I
= 240 mA
DQ
DD
P
1dB
Max Output Power
Max PAE
Zs
[Ω]
Freq
[MHz]
Zl
[Ω]
Gain
[dB]
PAE
[%]
Zl
[Ω]
Gain
[dB]
PAE
[%]
P
P
[W]
P
P
OUT
OUT
OUT
OUT
[dBm]
46.58
46.44
46.35
[dBm]
[W]
2540 13.3 – j23.8 5.7 – j10.9
2590 16.5 – j22.0 5.9 – j11.5
16.8
16.7
16.8
45
50.3
50.3
50.0
10.9 – j7.1
9.7 – j7.6
10 – j6.2
19.1
18.7
19.1
45.1
32
59.5
58.5
58.0
44
45.3
34
2640
21 – j24.7
6.4 – j11.5
43
44.9
31
Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, V
= 1.4 V
GS1
P
1dB
Max Output Power
Max PAE
Zs
[Ω]
Freq
[MHz]
Zl
[Ω]
Gain
[dB]
PAE
[%]
Zl
[Ω]
Gain
[dB]
PAE
[%]
P
P
P
P
OUT
OUT
OUT
OUT
[dBm]
[W]
100
100
98
[dBm]
[W]
2540
2590
2640
3.8-j12.1
5.2-j12.8
5.8-j13.3
11.8-j7.3
13-j5.4
14-j3.9
13.0
12.8
12.8
50
53.5
53.4
52.9
5.2-j5.3
5.7-j5.6
6.6-j6
14.4
14.2
14.2
48.4
69
71
69
63.4
62.2
61.0
50
48.5
49.9
48.4
Data Sheet
4 of 8
Rev. 03.3, 2016-06-15
PXAC261002FC
Reference Circuit, 2545 – 2595 MHz
RO4350, .020
(194)
RO4350, .020
(60)
VGS
VDD
C106
C210 C208
C209
C107
R103
C211
C105
C104
C213
R102
C212
RF_OUT
RF_IN
S1
C207
C206
C202
C103
R101
C201
C102
VGSPK
C203
C205
VDD
C101
C204
02_D
PXAC261002FC_OUT
PXAC261002FC_IN_02_D
P
x a c 2 6 1 0 0 2 f c _ C D _ 0 1 - 2 8 - 2 0 1 4
Reference circuit assembly diagram (not to scale)
Data Sheet
5 of 8
Rev. 03.3, 2016-06-15
PXAC261002FC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PXAC261002FC V1
Test Fixture Part No.
PCB
LTA/PXAC261002FC V1
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, r = 3.66, ƒ = 2545 – 2595 MHz
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Components Information
Component
Input
Description
Suggested Manufacturer
P/N
C101, C106
C102
Capacitor, 10 µF
Capacitor, 18 pF
Capacitor, 1.6 pF
Capacitor, 0.6 pF
Capacitor, 12 pF
Resistor, 10 ohm
Resistor, 50 ohm
Hybrid coupler
Taiyo Yuden
UMK325C7106MM-T
ATC800A180JT250T
ATC800A1R6CT250T
ATC800A0R6CT250T
ATC800A120JT250T
ERJ-3GEYJ100V
C16A50Z4
ATC
C103
ATC
C104
ATC
C105, C107
R101, R103
R102
ATC
Panasonic Electronic Components
Anaren
Anaren
S1
X3C26P1-03S
Output
C201, C202
Capacitor, 12 pF
Capacitor, 10 µF
ATC
ATC800A120KT250T
UMK325C7106MM-T
C203, C205, C208,
C210
Taiyo Yuden
C204, C209
C206
Capacitor, 220 µF
Capacitor, 0.5 pF
Capacitor, 0.6 pF
Capacitor, 12 pF
Capacitor, 0.4 pF
Capacitor, 3.9 pF
Panasonic Electronic Components
EEE-FP1V221A
ATC
ATC
ATC
ATC
ATC
ATC800A0R5CT250T
ATC800A0R6CT250T
ATC800A120JT250T
ATC800A0R4CT250T
ATC800A3R9CT250T
C207
C211
C212
C213
Pinout Diagram (top view)
S
Main
Peak
D1
D2
Pin
D1
D2
G1
G2
S
Description
Drain device 1 (Main)
Drain device 2 (Peak)
Gate device 1 (Main)
Gate device 2 (Peak)
Source (flange)
H-37248-4_pd_10-10-2012
G1
G2
Lead connections for PXAC261002FC
Data Sheet
6 of 8
Rev. 03.3, 2016-06-15
PXAC261002FC
Package Outline Specifications
Package H-37248-4
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Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ꢀ.12ꢁ ꢂ.ꢀꢀ5ꢃ unless specified otherwise.
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.
5. Lead thickness: ꢀ.1ꢀ + ꢀ.ꢀꢁ6/–ꢀ.ꢀ25 mm ꢂꢀ.ꢀꢀ4+ꢀ.ꢀꢀ3/–ꢀ.ꢀꢀ1 inchꢃ.
6. Gold plating thickness: 1.14 ꢀ.3ꢄ micron ꢂ45 15 microinchꢃ.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
7 of 8
Rev. 03.3, 2016-06-15
PXAC261002FC V1
Revision History
Revision
Date
Data Sheet Type
Page
Subjects (major changes since last revision)
01
2013-11-01
Advance
All
Data Sheet reflects advance specification for product development
All
All
Data Sheet reflects released product specification
Revised all data and includes final specs, typical performance graphs, loadpull, reference circuit
02
2014-01-28
Production
03
2014-03-26
2014-04-04
2016-06-07
2016-06-15
Production
Production
Production
Production
1
1
1
1
Corrected frequency range. Removed "doherty" from second feature. Updated feature 2.
Removed bullet point 4 (extra lines) from Features section.
Added OPAR to RF table.
03.1
03.2
03.3
Adjust OPAR information.
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2016-06-15
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2013 – 2016 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
8 of 8
Rev. 03.3, 2016-06-15
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