PXFC211507SCV1R250 [INFINEON]
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 â 2170 MHz;
| 型号： | PXFC211507SCV1R250 |
| 厂家： | 
Infineon |
| 描述： | Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 â 2170 MHz |
| 文件： | 总9页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PXFC211507SC
Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 2110 – 2170 MHz
Description
The PXFC211507SC is a 150-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2110
to 2170 MHz frequency band. Features include input and out-
put matching, high gain and a thermally-enhanced package with
earless flanges. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXFC211507SC
Package H-37248G-4/2
(formed leads)
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, VGS = 2.6 V,
IDQ = 960 mA, ƒ = 2115 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
•
•
Broadband internal input and output matching
Typical Pulsed CW performance, 2170 MHz, 28 V,
10 µs pulse width, 10% duty cycle
- Output power at P
- Efficiency = 56%
- Gain = 19 dB
= 150 W
21
20
19
18
17
16
15
14
56
48
40
32
24
16
8
1dB
Gain
•
•
Typical single-carrier WCDMA performance, 2170
MHz, 28 V, 8 dB PAR @ 0.01% CCDF, Test Model
1 with 64DPCH
- Output power = 32 W
- Efficiency = 32%
- Gain = 20 dB
Capable of handling 10:1 VSWR @28 V, 150 W
(CW) output power
Efficiency
•
•
Integrated ESD protection
c211507sc-gr1a
0
ESD Rating: Human Body Model, Class 2 (per
ANSI/ESDA/JEDEC JS-001
29
33
37
41
45
49
53
Output Power (dBm)
•
•
Low thermal resistance
Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
= 28 V, I = 960 mA, P = 32 W avg, ƒ = 2160 MHz, ƒ = 2170 MHz, 3GPP WCDMA signal, 3.84 MHz channel
V
DD
DQ
OUT
1
2
bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
19
Typ
20.4
Max
—
Unit
dB
G
ps
Drain Efficiency
Intermodulation Distortion
D
29
32.9
—
%
IMD
—
–30.5
–28
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 9
Rev. 02, 2015-03-03
PXFC211507SC
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V(
BR)DSS
DS
V
V
= 28 V, V = 0 V
I
I
—
1
µA
µA
µA
DS
GS
DSS
DSS
= 63 V, V = 0 V
—
—
10
1
DS
GS
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V = 0 V
I
—
—
DS
GSS
V
GS
= 10 V, V = 0.1 V
R
DS(on)
—
0.05
2.6
—
DS
V
DS
= 28 V, I
= 960 mA
V
GS
2.3
2.9
V
DQ
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
–6 to +10
0 to +32
225
V
GS
DD
V
V
Junction Temperature
Storage Temperature Range
T
°C
J
T
–65 to +150
0.56
°C
STG
Thermal Resistance (T
= 70°C, 150 W CW, 28 V)
R
θ
°C/W
CASE
JC
Ordering Information
Type and Version
Order Code
Package and Description
Shipping
PXFC211507SC V1 R250
PXFC211507SCV1R250XTMA1
H-37248G-4/2, earless flange,
formed leads
Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 02, 2015-03-03
PXFC211507SC
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, VGS = 2.6 V,
VDD = 28 V, VGS = 2.6 V,
IDQ = 960 mA, ƒ = 2165 MHz
IDQ = 960 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
20
19
18
17
16
15
14
56
48
40
32
24
16
8
21
20
19
18
17
16
15
14
56
48
40
32
24
16
8
Gain
Gain
Efficiency
Efficiency
41
c211507sc-gr1b
c211507sc-gr1c
0
0
29
33
37
45
49
53
29
33
37
41
45
49
53
Output Power (dBm)
Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, VGS = 2.6 V,
Two-carrier WCDMA Drive-up
VDD = 28 V, VGS = 2.6 V,
IDQ = 960 mA, ƒ = 2115 MHz
3GPP WCDMA signal: 8 dB PAR,
IDQ = 960 mA, ƒ = 2140 MHz
3GPP WCDMA signal: 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
10 MHz carrier spacing, 3.84 MHz BW
-15
-25
-35
-45
-55
-65
50
40
30
20
10
0
-15
-25
-35
-45
-55
-65
50
40
30
20
10
0
IMD Low
IMD Up
ACPR
IMD Low
IMD Up
ACPR
Efficiency
Efficiency
c211507sc-gr2a
c211507sc-gr2b
29
33
37
41
45
49
53
29
33
37
41
45
49
53
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 9
Rev. 02, 2015-03-03
PXFC211507SC
Typical Performance (cont.)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, VGS = 2.6 V,
IDQ = 960 mA, ƒ = 2165 MHz
VDD = 28 V, VGS = 2.6 V, IDQ = 960 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
3GPP WCDMA signal: 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
-25
-35
-45
-55
-65
50
40
30
20
10
0
-15
-25
-35
-45
-55
IMD Low
IMD Up
ACPR
Efficiency
2115 IMDL
2140 IMDL
2165 IMDL
2115 IMDU
2140 IMDU
2165 IMDU
c211507sc-gr2c
c211507sc-gr3
29
33
37
41
45
49
53
29
33
37
41
45
49
53
Output Power (dBm)
Output Power (dBm)
CW Performance
VDD = 28 V, IDQ = 960mA
CW Performance at seleted VDD
IDQ = 960 mA, ƒ = 2115 MHz
21
20
19
18
17
16
15
60
50
40
30
20
10
0
21
20
19
18
17
16
15
14
70
VDD = 24 V
VDD = 28 V
VDD = 32 V
60
50
40
30
20
10
0
Gain
Gain
Efficiency
32
2115 MHz
2140 MHz
2165 MHz
Efficiency
c211507sc-gr5a
c211507sc-gr4
27
32
37
42
47
52
57
27
37
42
47
52
57
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 9
Rev. 02, 2015-03-03
PXFC211507SC
Typical Performance (cont.)
CW Performance at selected VDD
CW Performance at selected VDD
IDQ = 960 mA, ƒ = 2165 MHz
IDQ = 960 mA, ƒ = 2140 MHz
21
20
19
18
17
16
15
60
50
40
30
20
10
0
21
20
19
18
17
16
15
60
50
40
30
20
10
0
VDD = 24 V
VDD = 28 V
VDD = 32 V
VDD = 24 V
VDD = 28 V
VDD = 32 V
Gain
Gain
Efficiency
42
Efficiency
37 42
Output Power (dBm)
c211507sc-gr5c
c211507sc-gr5b
27
32
47
52
57
27
32
37
47
52
57
Output Power (dBm)
Small Signal CW Performance
VDD = 28 V, IDQ = 960 mA
21
19
17
15
13
-4
-6
-8
Gain
-10
-12
Input Return Loss
c211507sc-gr6
1950
2050
2150
2250
2350
Frequency (MHz)
Data Sheet
5 of 9
Rev. 02, 2015-03-03
PXFC211507SC
Load Pull Performance
D
Z Source
Z Load
G
S
Pulsed CW signal: 10 µs, 10% duty cycle, V = 28 V, I
= 960 mA
DD
DQ
P
1dB
Class AB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[Ω]
Zl
[Ω]
Gain
[dB]
PAE
[%]
Zl
[Ω]
Gain
[dB]
PAE
[%]
P
P
P
P
OUT
OUT
OUT
[W]
OUT
[dBm]
52.10
52.10
52.20
[dBm]
50.90
50.80
50.90
[W]
123
120
123
2110
2140
2170
2.10 – j6.55
2.31 – j6.77
3.07 – j7.01
1.52 – j4.82
1.58 – j4.87
1.57 – j4.95
18.9
19.2
19.4
163
163
166
53.7
54.0
54.0
2.30 – j3.60
2.22 – j3.56
2.21 – j3.64
21.1
21.4
21.7
62.5
62.4
62.5
Reference Circuit Assembly, 2110 – 2170 MHz
DUT
PXFC211507SC V1
Reference Circuit No.
Order Code
PCB
LTN/PXFC211507SC V1
LTNPTFC211507SCE3TOBO1
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, r = 3.66
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Data Sheet
6 of 9
Rev. 02, 2015-03-03
PXFC211507SC
Reference Circuit (cont.)
R804
R803
R801
R802
(61)
C802 C803
RO4350, .020 (61)
S1
S3
S2
R805
C801
VGG
C201
C209
C202
C102
C101
VDD
R101
210
C208
C103
C211
RF_IN
RF_OUT
VDD
C205
C206
C204
C203
C207
RO4350, .020
PXFC211507SC_IN_02
PXFC211507SC_OUT_02
p
x a c 2 1 1 5 0 7 s c _ C D _ 0 2 - 1 3 - 1 5
Reference circuit assembly diagram (not to scale)
Components Information
Component
Description
Manufacturer
P/N
In
C101
Capacitor, 10 µF
Taiyo Yuden
ATC
UMK325C7106MM-T
C102, C103
Capacitor, 10 pF
ATC800A100JW150XB
ECJ-1VB1H102K
ERJ-8GEYJ100V
ERJ-8GEYJ101V
ERJ-3GEYJ132V
ERJ-3GEYJ122V
3224W-1-202E
LM7805CT
C801, C802, C803
Capacitor, 0.001 µF
Resistor, 10 ohms
Resistor, 100 ohms
Resistor, 1.3k ohms
Resistor, 1.2k ohms
Variable resistor, 2k ohms
Voltage Regulator
Transistor
Panasonic
R101, R801, R805
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Bourns Inc.
R802
R803
R804
S1
S2
Fairchild Semiconductor
S3
Fairchild Semiconductor
BCP56
Out
C201, C204, C205,
C206, C207, C208,
C209, C210
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
C202, C203
C211
Capacitor, 220 µF
Capacitor, 10 pF
Panasonic Electronic Components
EEE-FP1V221AP
ATC
ATC800A100JW150XB
Rev. 02, 2015-03-03
Data Sheet
7 of 9
PXFC211507SC
Package Outline Specifications
Package H-37248G-4/2 (formed leads)
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6
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994
2. Primary dimensions are mm, alternate dimensions are inches
3. All tolerances 0.127 [0.005]
4. Pins: D – drain, G – gate, S – source (flange), V – supply voltage
5. Lead thickness: 0.10 +0.051/–0.025 mm [.004 +.002/–.001 inch]
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
8 of 9
Rev. 02, 2015-03-03
PXFC211507SC V1
Revision History
Revision Date
Data Sheet
Advance
Page
all
Subjects (major changes at each revision)
01
02
2014-05-09
2015-03-03
Proposed specification for new product development.
Production
all
Complete final specifications, including production data, performance curves, refer-
ence circuit layout and load pull information.
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
(highpowerRF@infineon.com)
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2015-03-03
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
9 of 9
Rev. 02, 2015-03-03
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