PZTA13 [INFINEON]
NPN Silicon Darlington Transistors; NPN硅达林顿晶体管
| 型号： | PZTA13 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon Darlington Transistors |
| 文件： | 总4页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon Darlington Transistors
PZTA 13
PZTA 14
● For general AF applications
● High collector current
● High current gain
● Complementary types: PZTA 63
PZTA 64 (PNP)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
4
PZTA 13
PZTA 14
PZTA 13
PZTA 14
Q62702-Z2033
Q62702-Z2034
B
C
E
C
SOT-223
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CES
CB0
EB0
30
V
V
30
V
10
300
I
I
I
I
C
mA
Peak collector current
Base current
CM
500
B
100
Peak base current
Total power dissipation, T
Junction temperature
BM
200
P
tot
1.5
W
S
= 124 ˚C
Tj
150
˚C
Storage temperature range
T
stg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 72
≤ 17
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
PZTA 13
PZTA 14
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V
V
V
(BR)CES
(BR)CB0
(BR)EB0
30
30
10
–
–
–
–
–
–
V
IC
= 100 µA
Collector-base breakdown voltage
= 100 µA, I = 0
Emitter-base breakdown voltage
= 10 µA, I = 0
Collector-base cutoff current
IC
B
IE
C
I
CB0
EB0
V
CE = 30 V, I
E
= 0
–
–
–
–
100
10
nA
µA
V
CE = 30 V, I
E
= 0, T
A
= 150 ˚C
Emitter-base cutoff current
= 0
I
–
–
100
nA
–
VEB = 10 V, I
C
DC current gain
hFE
I
C
C
= 10 mA, VCE = 5 V
PZTA 13
PZTA 14
PZTA 13
PZTA 14
5000
–
–
–
–
–
10000 –
10000 –
20000 –
I
= 100 mA, VCE = 5 V
Collector-emitter saturation voltage1)
= 100 mA, I = 0.1 mA
V
CEsat
BEsat
–
–
1.5
V
IC
B
Base-emitter saturation voltage1)
= 100 mA, I = 0.1 mA
V
–
–
2.0
IC
B
AC characteristics
Transition frequency
fT
125
–
–
MHz
IC
= 50 mA, VCE = 5 V, f = 100 MHz
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
PZTA 13
PZTA 14
Total power dissipation Ptot = f (T
A
*; TS
)
Transition frequency f
T
= f (I )
C
* Package mounted on epoxy
VCE = 5 V, f = 100 MHz
Collector cutoff current ICB0 = f (T
A
)
DC current gain hFE = f (I )
C
V
CE = 30 V
VCE = 5 V
Semiconductor Group
3
PZTA 13
PZTA 14
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC
= f (VCE sat
)
IC
= f (VBE sat)
hFE = 1000
hFE = 1000
Permissible pulse load Ptot max / Ptot DC = f (t )
p
Semiconductor Group
4
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