Q62702-A930 [INFINEON]

Silicon PIN Diode; 硅PIN二极管
Q62702-A930
型号: Q62702-A930
厂家: Infineon    Infineon
描述:

Silicon PIN Diode
硅PIN二极管

二极管
文件: 总2页 (文件大小:38K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BA 586  
Silicon PIN Diode  
Preliminary Data  
Current-controlled RF resistor for  
switching and attenuating applications.  
Frequency range above 1 MHz  
Designed for low IM distortion  
Package1)  
SOD-123  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
BA 586  
white P  
Q62702-A930  
Maximum Ratings  
Parameter  
Symbol  
Values  
50  
Unit  
Reverse voltage  
V
R
V
Forward current  
I
F
50  
mA  
Operating temperature range  
Storage temperature range  
T
op  
– 55 … + 125 ˚C  
Tstg  
– 55 … + 150  
Thermal Resistance  
Junction - ambient  
R
th JA  
450  
K/W  
1)  
For detailed information see chapter Package Outlines.  
BA 586  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Forward voltage  
V
F
1.15  
V
I
F
= 50 mA  
Reverse current  
= 50 V  
Diode capacitance  
f = 1 MHz, V = 50 V  
f= 100 MHz, V = 0 V  
I
R
50  
nA  
pF  
V
R
C
T
R
0.23  
0.2  
0.35  
R
Forward resistance  
rf  
f = 100 MHz  
IF  
IF  
IF  
= 10 µA  
= 1 mA  
= 10 mA  
6.5  
2400  
58  
7.8  
10  
Zero bias conductance  
f= 100 MHz, V = 0 V  
g
p
40  
2
µS  
R
Series inductance  
L
S
nH  
Diode capacitance C  
T
= f (VR)  
Forward resistance r  
f
= f (I )  
F
f= 1 MHz / f = 100 MHz  
f= 100 MHz  

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