Q62702-A930 [INFINEON]
Silicon PIN Diode; 硅PIN二极管型号: | Q62702-A930 |
厂家: | Infineon |
描述: | Silicon PIN Diode |
文件: | 总2页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BA 586
Silicon PIN Diode
Preliminary Data
● Current-controlled RF resistor for
switching and attenuating applications.
● Frequency range above 1 MHz
● Designed for low IM distortion
Package1)
SOD-123
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
BA 586
white P
Q62702-A930
Maximum Ratings
Parameter
Symbol
Values
50
Unit
Reverse voltage
V
R
V
Forward current
I
F
50
mA
Operating temperature range
Storage temperature range
T
op
– 55 … + 125 ˚C
Tstg
– 55 … + 150
Thermal Resistance
Junction - ambient
R
th JA
≤ 450
K/W
1)
For detailed information see chapter Package Outlines.
BA 586
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
Forward voltage
V
F
–
–
1.15
V
I
F
= 50 mA
Reverse current
= 50 V
Diode capacitance
f = 1 MHz, V = 50 V
f= 100 MHz, V = 0 V
I
R
–
–
50
nA
pF
V
R
C
T
R
–
–
0.23
0.2
0.35
–
R
Forward resistance
rf
Ω
f = 100 MHz
IF
IF
IF
= 10 µA
= 1 mA
= 10 mA
–
–
6.5
2400
58
7.8
–
–
10
Zero bias conductance
f= 100 MHz, V = 0 V
g
p
–
40
2
–
µS
R
Series inductance
L
S
–
–
nH
Diode capacitance C
T
= f (VR)
Forward resistance r
f
= f (I )
F
f= 1 MHz / f = 100 MHz
f= 100 MHz
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