Q62702-B663 [INFINEON]
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation); 硅调谐二极管（高Q超突变调谐二极管专为低调谐电压操作）
| 型号： | Q62702-B663 |
| 厂家： | 
Infineon |
| 描述： | Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
| 文件： | 总3页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BBY 51-03W
Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment
1)
Type
Marking
Ordering Code
(tape and reel)
Package
Pin Configuration
1
2
BBY 51-03W
H
Q62702-B663
C1
A2
SOD-323
Maximum Ratings
Parameter
Symbol
VR
BBY 51-03W
7
Unit
V
Reverse voltage
Forward current
IF
20
mA
°C
Operating temperature range
Storage temperature range
Top
-55 +150°C
-55...+150°C
Tstg
°C
______________________________
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 03.05.95
BBY 51-03W
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Value
typ.
Unit
min.
max.
DC Characteristics
IR
Reverse current
VR = 6 V
nA
pF
-
-
-
-
10
200
VR = 6 V, TA = 65 °C
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
Capacitance ratio
VR = 1 V, 4 V, f = 1 MHz
CT
4.5
3.4
2.7
2.5
5.3
4.2
3.5
3.1
6.1
5.2
4.6
3.7
CT1V/CT4V
-
1.55
1.75
2.2
Capacitance difference
VR = 1 V, 3 V,f = 1MHz
VR = 3 V, 4 V,f = 1MHz
Series resistance
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
pF
C1V-C3V
C3V-C4V
rs
1.4
0.30
1.78
0.50
2.2
0.7
Ω
-
0.37
-
CC
Ls
pF
nH
-
-
0.12
2
-
-
Serien inductance
____________________
1) Without 100 % test, correlation limits
Semiconductor Group
2
Edition A01, 03.05.95
BBY 51-03W
*
Dioden capacitance CT = f (VR )
f = 1 MHz
Temperature coefficient of the diode
capacitance TCC = f (VR), f = 1 MHz
ppm/C°
T
CC
Semiconductor Group
3
Edition A01, 03.05.95
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