Q62702-C1504 [INFINEON]
PNP Silicon AF Transistors (For general AF applications High collector current High current gain); PNP硅晶体管自动对焦(一般自动对焦的应用高集电极电流高电流增益)型号: | Q62702-C1504 |
厂家: | Infineon |
描述: | PNP Silicon AF Transistors (For general AF applications High collector current High current gain) |
文件: | 总6页 (文件大小:232K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC 847PN
NPN/PNP Silicon AF Transistor Array
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation
PIN Configuration
NPN-Transistor 1 = E 2 = B 6 = C
Type
Marking Ordering Code
1Ps Q62702-C2374
Package
SOT-363 PNP-Transistor 4 = E 5 = B 3 = C
BC 847PN
Maximum Ratings
Parameter
Symbol
Value
45
Unit
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
V
V
CEO
V
50
CBO
V
50
CES
V
5
EBO
I
100
mA
C
I
200
CM
Total power dissipation, T = 115 °C
P
250
mW
°C
S
tot
Junction temperature
Storage temperature
T
150
j
T
-65...+150
stg
Thermal Resistance
Junction ambient 1)
R
R
≤275
≤140
K/W
thJA
Junction - soldering point
thJS
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Cu
Semiconductor Group
1
May-12-1998
BC 847PN
Electrical Characteristicsat T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ.
Unit
min.
45
50
50
5
max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
V
V
V
V
-
-
-
-
-
-
-
-
V
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
CBO
I = 10 mA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
C
B
Collector-emitter breakdown voltage
I = 10 µA, V = 0
-
C
BE
Emitter-base breakdown voltage
I = 10 µA, I = 0
-
E
C
Collector cutoff current
= 30 V, I = 0
I
-
15
5
nA
µA
-
V
CB
E
Collector cutoff current
= 30 V, I = 0 , T = 150 °C
I
-
CBO
V
CB
E
A
DC current gain 1)
I = 10 µA, V = 5 V
h
FE
-
250
290
-
C
CE
I = 2 mA, V = 5 V
C
200
630
CE
Collector-emitter saturation voltage1)
I = 10 mA, I = 0.5 mA
V
V
V
mV
CEsat
BEsat
-
-
90
300
650
C
B
I = 100 mA, I = 5 mA
200
C
B
Base-emitter saturation voltage 1)
I = 10 mA, I = 0.5 mA
-
-
700
900
-
-
C
B
I = 100 mA, I = 5 mA
C
B
Base-emitter voltage 1)
I = 2 mA, V = 5 V
BE(ON)
580
-
660
-
750
820
C
CE
I = 10 mA, V = 5 V
C
CE
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
May-12-1998
BC 847PN
Electrical Characteristicsat T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC Characteristics per Transistor
Transition frequency
f
-
-
-
-
-
-
-
250
2
-
-
-
-
-
-
-
MHz
pF
T
I = 20 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
10
4.5
2
eb
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz
h
h
h
h
kΩ
11e
12e
21e
22e
C
CE
-4
Open-circuit reverse voltage transfer ratio
I = 2 mA, V = 5 V, f = 1 kHz
10
C
CE
Short-circuit forward current transfer ratio
I = 2 mA, V = 5 V, f = 1 kHz
330
30
-
C
CE
Open-circuit output admittance
I = 2 mA, V = 5 V, f = 1 kHz
µS
C
CE
Semiconductor Group
3
May-12-1998
BC 847PN
Total power dissipationP = f (T *;T )
tot
A
S
* Package mounted on epoxy
300
mW
T
S
P
tot
200
150
100
50
T
A
0
°C
0
20
40
60
80
100
120
150
T ,T
A
S
Permissible Pulse LoadR
= f (t )
Permissible Pulse Load
thJS
p
P
/ P
= f (t )
totmax
totDC
p
3
10 3
10
K/W
-
2
10
P
totmax
/ P
D = 0
0.005
0.01
0.02
0.05
0.1
R
thJS
totDC
10 2
10 1
10 0
1
0
10
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0.2
0.5
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Semiconductor Group
4
May-12-1998
BC 847PN
Collector-base capacitätC = f (V
)
Transition frequencyf = f (I )
T C
CB
CBO
Emitter-base capacitätCEB = f (V
)
V
CE
= 5V
EBO
Collector cutoff currentI
= f (T )
Collector-emitter saturation voltage
I = f (V ), h = 20
CBO
A
V
= 30V
CB
C
CEsat
FE
Semiconductor Group
5
May-12-1998
BC 847PN
DC current gain h = f (I )
Base-emitter saturation voltage
I = f (V ), h = 20
FE
C
V
CE
= 5V
C
BEsat
FE
h parameter h = f (I ) normalized
h parameter h = f (V ) normalized
e CE
e
C
V
= 5V
I = 2mA
C
CE
Semiconductor Group
6
May-12-1998
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