Q62702-C1539
更新时间:2024-09-18 02:18:08
品牌:INFINEON
描述:NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
Q62702-C1539 概述
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) NPN硅晶体管自动对焦( AF对于输入级和驱动器应用高电流增益) 小信号双极晶体管
Q62702-C1539 规格参数
生命周期: | Obsolete | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 45 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
Q62702-C1539 数据手册
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PDF下载NPN Silicon AF Transistors
BCW 60
BCX 70
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
● Complementary types: BCW 61, BCX 71 (PNP)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BCW 60 A
BCW 60 B
BCW 60 C
BCW 60 D
BCW 60 FF
BCW 60 FN
BCX 70 G
BCX 70 H
BCX 70 J
AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
Q62702-C1517
Q62702-C1497
Q62702-C1476
Q62702-C1477
Q62702-C1529
Q62702-C1567
Q62702-C1539
Q62702-C1481
Q62702-C1552
Q62702-C1571
B
E
C
SOT-23
BCX 70 K
AKs
1)
For detailed information see chapter Package Outlines.
5.91
Semiconductor Group
1
BCW 60
BCX 70
Maximum Ratings
Parameter
Symbol
Values
Unit
BCW 60 BCW 60 FF BCX 70
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CE0
CB0
EB0
32
32
32
32
45
45
V
5
I
I
I
C
100
200
200
330
150
mA
Peak collector current
Peak base current
CM
BM
Total power dissipation, T
S
= 71 ˚C Ptot
mW
˚C
Junction temperature
T
T
j
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient1)
R
th JA
th JS
≤ 310
≤ 240
K/W
Junction - soldering point
R
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
1)
Semiconductor Group
2
BCW 60
BCX 70
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 10 mA
BCW 60, BCW 60 FF
BCX 70
32
45
–
–
–
–
Collector-base breakdown voltage
IC
= 10 µA
BCW 60, BCW 60 FF
BCX 70
32
45
–
–
–
–
Emitter-base breakdown voltage
= 1 µA
5
–
–
IE
Collector cutoff current
ICB0
V
V
V
V
CB = 32 V
CB = 45 V
CB = 32 V, T
CB = 45 V, T
BCW 60, BCW 60 FF
BCX 70
= 150 ˚C BCW 60, BCW 60 FF
= 150 ˚C BCX 70
–
–
–
–
–
–
–
–
20
20
20
20
nA
nA
µA
µA
A
A
Emitter cutoff current
IEB0
–
–
20
nA
VEB = 4 V
DC current gain 1)
h
FE
–
IC
IC
IC
= 10 µA, VCE = 5 V
20
20
40
100
140
200
300
460
–
–
–
–
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
= 2 mA, VCE = 5 V
120
180
250
380
170
250
350
500
220
310
460
630
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
= 50 mA, VCE = 1 V
50
70
90
100
–
–
–
–
–
–
–
–
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
BCW 60
BCX 70
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter saturation voltage1)
VCEsat
VBEsat
VBE (on)
V
–
–
0.12
0.20
0.25
0.55
I
C
= 10 mA, I
B
= 0.25 mA
= 1.25 mA
IC
= 50 mA, I
B
Base-emitter saturation voltage1)
–
–
0.70
0.83
0.85
1.05
I
C
= 10 mA, I
B
= 0.25 mA
= 1.25 mA
IC
= 50 mA, I
B
Base-emitter voltage
IC
IC
IC
= 10 µA, VCE = 5 V
= 2 mA, VCE = 5 V
= 50 mA, VCE = 1 V 1)
–
0.55
–
0.52
0.65
0.78
–
0.75
–
AC characteristics
Transition frequency
f
T
–
–
–
250
3
–
–
–
MHz
pF
I
C
= 20 mA, VCE = 5 V, f = 100 MHz
Output capacitance
CB = 10 V, f = 1 MHz
Input capacitance
EB = 0.5 V, f = 1 MHz
Short-circuit input impedance
C
obo
ibo
V
C
8
V
h
h
11e
kΩ
IC
= 2 mA, VCE = 5 V, f = 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
–
–
–
–
2.7
3.6
4.5
7.5
–
–
–
–
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
10– 4
Open-circuit reverse voltage transfer ratio
12e
IC
= 2 mA, VCE = 5 V, f = 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
–
–
–
1.5
2.0
2.0
3.0
–
–
–
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
4
BCW 60
BCX 70
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Short-circuit forward current transfer ratio
h
h
21e
–
IC
= 2 mA, VCE = 5 V, f = 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
–
–
–
–
200
260
330
520
–
–
–
–
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
Open-circuit output admittance
22e
µs
IC
= 2 mA, VCE = 5 V, f = 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
–
–
–
–
18
24
30
50
–
–
–
–
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
Noise figure
= 0.2 mA, VCE = 5 V, R
f= 1 kHz, ∆f = 200 Hz
F
V
dB
IC
S
= 2 kΩ
BCW 60 A to BCX 70 K
BCW 60 FF, BCW 60 FN
–
–
2
1
–
2
Equivalent noise voltage
= 0.2 mA, VCE = 5 V, R
f= 10 Hz … 50 Hz
BCW 60 FF, BCW 60 FN
n
–
–
0.135 µV
IC
S
= 2 kΩ
Semiconductor Group
5
BCW 60
BCX 70
Total power dissipation Ptot = f (T
* Package mounted on epoxy
A
*; TS
)
Collector-base capacitance CCB0 = f (VCB0
Emitter-base capacitance CEB0 = f (VEB0
)
)
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
C
V
CE = 5 V
Semiconductor Group
6
BCW 60
BCX 70
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBEsat
)
IC
= f (VCEsat)
hFE = 40
hFE = 40
Collector current I
C
= f (VBE
)
DC current gain hFE = f (I )
C
V
CE = 5 V
VCE = 5 V
Semiconductor Group
7
BCW 60
BCX 70
Collector cutoff current ICB0 = f (T
A
)
h parameter h
e
= f (I )
C
VCE = 5 V
h parameter h
= 2 mA
e
= f (VCE
)
Noise figure F = f (VCE
)
I
C
IC
= 0.2 mA, R = 2 kΩ, f = 1 kHz
S
Semiconductor Group
8
BCW 60
BCX 70
Noise figure F = f (f)
= 0.2 mA, R = 2 kΩ,VCE = 5 V
Noise figure F = f (I )
C
IC
S
V
CE = 5 V, f = 120 Hz
Noise figure F = f (I
C)
Noise figure F = f (I )
C
V
CE = 5 V, f = 1 kHz
VCE = 5 V, f = 10 kHz
Semiconductor Group
9
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