Q62702-C1572 [INFINEON]
NPN Silicon AF Transistors (For general AF applications High collector current); NPN硅晶体管自动对焦（一般自动对焦的应用高集电极电流）
| 型号： | Q62702-C1572 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon AF Transistors (For general AF applications High collector current) |
| 文件： | 总4页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon AF Transistors
BCX 68
● For general AF applications
● High collector current
● High current gain
● Low collector-emitter saturation voltage
● Complementary type: BCX 69 (PNP)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BCX 68
–
Q62702-C1572
Q62702-C1864
Q62702-C1865
Q62702-C1866
B
C
E
SOT-89
BCX 68-10
BCX 68-16
BCX 68-25
CB
CC
CD
Maximum Ratings
Parameter
Symbol
Values
20
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
V
V
V
25
5
I
I
I
I
C
1
A
Peak collector current
Base current
CM
2
B
100
200
1
mA
Peak base current
Total power dissipation, T
Junction temperature
BM
S
= 130 ˚C
Ptot
W
T
j
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient 2)
R
th JA
th JS
≤ 75
≤ 20
K/W
R
Junction - soldering point
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BCX 68
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V
V
V
(BR)CE0
(BR)CB0
(BR)EB0
20
25
5
–
–
–
–
–
–
V
IC
= 30 mA
Collector-base breakdown voltage
= 10 µA
Emitter-base breakdown voltage
= 1 µA
Collector cutoff current
IC
IE
I
CB0
EB0
VCB = 25 V
–
–
–
–
100
100
nA
µA
V
CB = 25 V, T
A
= 150 ˚C
Emitter cutoff current
I
–
–
10
µA
VEB = 5 V
DC current gain1)
hFE
–
50
–
–
I
C
= 5 mA, VCE = 10 V
= 500 mA, VCE = 1 V
IC
85
85
100
160
60
–
375
160
250
375
–
BCX 68
100
160
250
–
BCX 68-10
BCX 68-16
BCX 68-25
IC
= 1 A, VCE = 1 V
Collector-emitter saturation voltage1)
= 1 A, I = 100 mA
V
CEsat
BE
–
–
0.5
V
IC
B
Base-emitter voltage1)
V
–
–
0.6
–
–
1
I
C
= 5 mA, VCE = 10 V
= 1 A, VCE = 1 V
IC
AC characteristics
Transition frequency
fT
–
100
–
MHz
IC
= 100 mA, VCE = 5 V, f = 20 MHz
1)
Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BCX 68
Total power dissipation Ptot = f (T
A
*; TS
)
Collector current I
C
= f (VBE
)
* Package mounted on epoxy
VCE = 1 V
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
C
V
CE = 5 V
Semiconductor Group
3
BCX 68
DC current gain hFE = f (I
C
)
Collector-emitter saturation voltage
V
CE = 1 V
IC
= f (VCEsat)
hFE = 10
Collector cutoff current ICB0 = f (T
A
)
Base-emitter saturation voltage
V
CB = 25 V
IC
= f (VBEsat)
h
FE = 10
Semiconductor Group
4
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