Q62702-C1632 [INFINEON]
NPN Silicon AF Transistors (For general AF applications High current gain); NPN硅晶体管自动对焦（一般自动对焦的应用高电流增益）
| 型号： | Q62702-C1632 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon AF Transistors (For general AF applications High current gain) |
| 文件： | 总6页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon AF Transistors
BCW 65
BCW 66
● For general AF applications
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BCW 67, BCW 68 (PNP)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BCW 65 A
BCW 65 B
BCW 65 C
BCW 66 F
BCW 66 G
BCW 66 H
EAs
EBs
ECs
EFs
EGs
EHs
Q62702-C1516
Q62702-C1612
Q62702-C1479
Q62702-C1892
Q62702-C1526
Q62702-C1632
B
E
C
SOT-23
1)
For detailed information see chapter Package Outlines.
5.91
Semiconductor Group
1
BCW 65
BCW 66
Maximum Ratings
Parameter
Symbol
Values
BCW 66
Unit
BCW 65
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CE0
CB0
EB0
32
60
5
45
75
5
V
I
I
I
I
C
800
mA
A
Peak collector current
Base current
CM
1
100
B
mA
Peak base current
BM
200
Total power dissipation, T
S
= 79 ˚C Ptot
330
mW
˚C
Junction temperature
T
T
j
150
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient1)
R
th JA
th JS
≤ 285
≤ 215
K/W
Junction - soldering point
R
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
1)
Semiconductor Group
2
BCW 65
BCW 66
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
BCW 65
BCW 66
32
45
–
–
–
–
Collector-base breakdown voltage
= 10 µA
IC
BCW 65
BCW 66
60
75
–
–
–
–
Emitter-base breakdown voltage, I
E
= 10 µA
5
–
–
Collector cutoff current
ICB0
V
V
V
V
CB = 32 V
CB = 45 V
CB = 32 V, T
CB = 45 V, T
BCW 65
BCW 66
BCW 65
BCW 66
–
–
–
–
–
–
–
–
20
20
20
20
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
Emitter-base cutoff current, VEB = 4 V
I
EB0
FE
–
–
20
nA
–
DC current gain1)
h
IC
IC
IC
IC
= 100 µA, VCE = 10 V
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
= 10 mA, VCE = 1 V
35
50
80
–
–
–
–
–
–
75
110
180
–
–
–
–
–
–
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
= 100 mA, VCE = 1 V
100
160
250
160
250
350
250
400
630
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
= 500 mA, VCE = 2 V
35
60
100
–
–
–
–
–
–
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
1)
Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
BCW 65
BCW 66
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter saturation voltage1)
V
CEsat
BEsat
V
–
–
–
–
0.3
0.7
I
C
= 100 mA, I
B
= 10 mA
= 50 mA
IC
= 500 mA, I
B
Base-emitter saturation voltage1)
V
–
–
–
–
1.25
2
I
C
= 100 mA, I
B
= 10 mA
= 50 mA
IC
= 500 mA, I
B
AC characteristics
Transition frequency
f
T
–
–
–
170
6
–
–
–
MHz
pF
I
C
= 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
CB = 10 V, f = 1 MHz
Input capacitance
C
obo
ibo
V
C
60
VEB = 0.5 V, f = 1 MHz
1)
Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
4
BCW 65
BCW 66
Total power dissipation Ptot = f (T
A
*; TS
)
Transition frequency f
T
= f (I )
C
* Package mounted on epoxy
VCE = 5 V
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Collector cutoff current ICB0 = f (T )
A
V
CB = VCEmax
Semiconductor Group
5
BCW 65
BCW 66
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBEsat
)
IC
= f (VCEsat)
hFE = 10
hFE = 10
DC current gain hFE = f (I )
C
V
CE = 1 V
Semiconductor Group
6
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