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Q62702-C1688 [INFINEON]

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage); PNP硅晶体管自动对焦（ AF对于输入级和驱动器应用高电流增益低集电极 - 发射极饱和电压）
Q62702-C1688
型号： Q62702-C1688
厂家： Infineon    Infineon
描述：

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
PNP硅晶体管自动对焦（ AF对于输入级和驱动器应用高电流增益低集电极 - 发射极饱和电压）

晶体 驱动器 小信号双极晶体管 光电二极管 放大器
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PNP Silicon AF Transistors  
BC 856 ... BC 860  
Features  
● For AF input stages and driver applications  
● High current gain  
● Low collector-emitter saturation voltage  
● Low noise between 30 Hz and 15 kHz  
● Complementary types: BC 846, BC 847,  
BC 849, BC 850 (NPN)  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
BC 856 A  
BC 856 B  
BC 857 A  
BC 857 B  
BC 857 C  
BC 858 A  
BC 858 B  
BC 858 C  
BC 859 A  
BC 859 B  
BC 859 C  
BC 860 B  
BC 860 C  
3As  
3Bs  
3Es  
3Fs  
3Gs  
3Js  
3Ks  
3Ls  
4As  
4Bs  
4Cs  
4Fs  
4Gs  
Q62702-C1773  
Q62702-C1886  
Q62702-C1850  
Q62702-C1688  
Q62702-C1851  
Q62702-C1742  
Q62702-C1698  
Q62702-C1507  
Q62702-C1887  
Q62702-C1774  
Q62702-C1761  
Q62702-C1888  
Q62702-C1889  
B
E
C
SOT-23  
1)For detailed information see chapter Package Outlines.  
Semiconductor Group  
1
04.96  
BC 856 ... BC 860  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
BC 856 BC 857 BC 858  
BC 860 BC 859  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CE0  
CB0  
CES  
EB0  
65  
80  
80  
5
45  
50  
50  
5
30  
30  
30  
5
V
I
I
I
I
C
100  
200  
200  
200  
330  
150  
mA  
Peak collector current  
Peak base current  
CM  
BM  
EM  
Peak emitter current  
Total power dissipation, T  
Junction temperature  
S
=71 ˚C  
P
tot  
mW  
˚C  
Tj  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient1)  
R
th JA  
th JS  
≤ 310  
≤ 240  
K/W  
Junction - soldering point  
R
1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
Semiconductor Group  
2
BC 856 ... BC 860  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
DC characteristics  
Collector-emitter breakdown voltage  
V(BR)CE0  
V(BR)CB0  
V(BR)CES  
V(BR)EB0  
V
IC  
= 10 mA  
BC 856  
65  
45  
30  
–
–
–
–
–
–
BC 857, BC 860  
BC 858, BC 859  
Collector-base breakdown voltage  
IC  
= 10 µA  
BC 856  
80  
50  
30  
–
–
–
–
–
–
BC 857, BC 860  
BC 858, BC 859  
Collector-emitter breakdown voltage  
IC  
= 10 µA, VBE = 0  
BC 856  
80  
50  
30  
–
–
–
–
–
–
BC 857, BC 860  
BC 858, BC 859  
Emitter-base breakdown voltage  
= 1 µA  
5
–
–
IE  
Collector cutoff current  
ICB0  
V
CB = 30 V  
–
–
1
–
15  
4
nA  
µA  
V
CB = 30 V, T  
A
= 150 ˚C  
DC current gain  
h
FE  
–
IC  
= 10 µA, VCE = 5 V  
BC 856 A … BC 859 A  
BC 856 B … BC 860 B  
BC 857 C … BC 860 C  
–
–
–
140  
250  
480  
–
–
–
IC  
= 2 mA, VCE = 5 V  
BC 856 A … BC 859 A  
BC 856 B … BC 860 B  
BC 857 C … BC 860 C  
125  
220  
420  
180  
290  
520  
250  
475  
800  
Collector-emitter saturation voltage1)  
VCEsat  
VBEsat  
VBE(on)  
mV  
–
–
75  
250  
300  
650  
I
C
= 10 mA, I  
= 100 mA, I  
B
= 0.5 mA  
= 5 mA  
IC  
B
Base-emitter saturation voltage1)  
–
–
700  
850  
–
–
I
C
= 10 mA, I  
= 100 mA, I  
B
= 0.5 mA  
= 5 mA  
IC  
B
Base-emitter voltage  
I
C
= 2 mA, VCE = 5 V  
= 10 mA, VCE = 5 V  
600  
–
650  
–
750  
820  
IC  
1)Pulse test: t ≤ 300 µs, D = 2 %.  
Semiconductor Group  
3
BC 856 ... BC 860  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
AC characteristics  
Transition frequency  
f
T
–
–
–
250  
3
–
–
–
MHz  
pF  
I
C
= 20 mA, VCE = 5 V, f = 100 MHz  
Output capacitance  
CB = 10 V, f = 1 MHz  
Input capacitance  
CB = 0.5 V, f = 1 MHz  
Short-circuit input impedance  
= 2 mA, VCE = 5 V, f = 1 kHz  
BC 856 A … BC 859 A  
C
obo  
ibo  
V
C
8
V
h
h
h
h
11e  
12e  
21e  
22e  
kΩ  
IC  
–
–
–
2.7  
4.5  
8.7  
–
–
–
BC 856 B … BC 860 B  
BC 857 C … BC 860 C  
10– 4  
Open-circuit reverse voltage transfer ratio  
= 2 mA, VCE = 5 V, f = 1 kHz  
BC 856 A … BC 859 A  
IC  
–
–
–
1.5  
2.0  
3.0  
–
–
–
BC 856 B … BC 860 B  
BC 857 C … BC 860 C  
Short-circuit forward current transfer ratio  
= 2 mA, VCE = 5 V, f = 1 kHz  
BC 856 A … BC 859 A  
–
IC  
–
–
–
200  
330  
600  
–
–
–
BC 856 B … BC 860 B  
BC 857 C … BC 860 C  
Open-circuit output admittance  
= 2 mA, VCE = 5 V, f = 1 kHz  
BC 856 A … BC 859 A  
µS  
dB  
IC  
–
–
–
18  
30  
60  
–
–
–
BC 856 B … BC 860 B  
BC 857 C … BC 860 C  
Noise figure  
= 0.2 mA, VCE = 5 V, R  
F
V
IC  
S
= 2 kΩ  
BC 859  
f= 30 Hz … 15 kHz  
–
–
–
–
1.2  
1.0  
1.0  
1.0  
4
3
4
4
BC 860  
BC 859  
BC 860  
f= 1 kHz, ∆ f = 200 Hz  
Equivalent noise voltage  
n
–
–
0.110 µV  
I
C
= 0.2 mA, VCE = 5 V, R  
S
= 2 kΩ  
BC 860  
f= 10 Hz … 50 Hz  
Semiconductor Group  
4
BC 856 ... BC 860  
Total power dissipation Ptot = f (T  
* Package mounted on epoxy  
A
*; TS  
)
Collector-base capacitance CCB0 = f (VCB0  
Emitter-base capacitance CEB0 = f (VEB0  
)
)
Permissible pulse load Ptot max/Ptot DC = f (t  
p)  
Transition frequency f  
T
= f (I )  
C
V
CE = 5 V  
Semiconductor Group  
5
BC 856 ... BC 860  
Collector cutoff current ICB0 = f (T  
A
)
Collector-emitter saturation voltage  
V
CB = 30 V  
IC = f (VCEsat), hFE = 20  
DC current gain hFE = f (I  
C)  
Base-emitter saturation voltage  
V
CE = 5 V  
IC = f (VBEsat), hFE = 20  
Semiconductor Group  
6
BC 856 ... BC 860  
h parameter h  
e
= f (IC) normalized  
h parameter h  
e
= f (VCE) normalized  
VCE = 5 V  
IC  
= 2 mA  
Noise figure F = f (VCE  
)
Noise figure F = f (f)  
= 0.2 mA, R = 2 kΩ, VCE = 5 V  
IC  
= 0.2 mA, R = 2 kΩ, f = 1 kHz  
S
IC  
S
Semiconductor Group  
7
BC 856 ... BC 860  
Noise figure F = f (I  
C)  
Noise figure F = f (I  
C)  
V
CE = 5 V, f = 120 Hz  
VCE = 5 V, f = 1 kHz  
Noise figure F = f (I )  
C
V
CE = 5 V, f = 10 kHz  
Semiconductor Group  
8

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