Q62702-F1088 [INFINEON]
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and); NPN硅RF晶体管（对于低噪声，天线和低失真宽带放大器）
| 型号： | Q62702-F1088 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) |
| 文件： | 总4页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFQ 19S
NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5GHz
at collector currents from 10 mA to 70 mA
• CECC-type available: CECC 50 002/259
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
1 = B 2 = C
Package
BFQ 19S
FGs
Q62702-F1088
3 = E
SOT-89
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
15
20
3
V
CEO
CBO
EBO
I
I
75
12
mA
W
C
Base current
B
Total power dissipation
P
tot
≤
T
85 °C
1
S
Junction temperature
Ambient temperature
Storage temperature
T
T
T
150
°C
j
- 65 ... + 150
- 65 ... + 150
A
stg
Thermal Resistance
1)
Junction - soldering point
R
≤ 65
K/W
thJS
Semiconductor Group
1
Dec-16-1996
BFQ 19S
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
(BR)CEO
I = 1 mA, I = 0
15
-
-
C
B
Collector-emitter cutoff current
= 20 V, V = 0
I
I
I
µA
nA
µA
-
CES
V
-
-
100
100
10
CE
BE
Collector-base cutoff current
= 10 V, I = 0
CBO
V
-
-
CB
E
Emitter-base cutoff current
= 2 V, I = 0
EBO
V
-
-
EB
C
DC current gain
I = 70 mA, V = 8 V
h
FE
40
100
220
C
CE
Semiconductor Group
2
Dec-16-1996
BFQ 19S
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
f
GHz
pF
T
I = 70 mA, V = 8 V, f = 500 MHz
4
-
5.5
1
-
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
C
F
cb
ce
eb
V
1.5
CB
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
-
0.4
4.4
-
-
CE
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
-
EB
Noise figure
dB
I = 20 mA, V = 8 V, Z = Z
C
CE
S
Sopt
Sopt
f = 900 MHz
-
-
2.5
4
-
-
f = 1.8 GHz
Power gain
2)
G
ma
I = 70 mA, V = 8 V, Z = Z
C
CE
S
Z = Z
L
Lopt
f = 900 MHz
f = 1.8 GHz
-
-
11.5
7
-
-
2
Transducer gain
|S |
21e
I = 30 mA, V = 8 V, Z =Z = 50 Ω
C
CE
S
L
f = 900 MHz
-
-
9.5
4
-
-
f = 1.8 GHz
Third order intercept point
I = 70 mA, V = 8 V, f = 900 MHz
IP
dBm
3
C
CE
Ω
Z =Z = 50
-
35
-
S
L
Semiconductor Group
3
Dec-16-1996
BFQ 19S
Total power dissipation P = f (T *, T )
tot
A
S
* Package mounted on epoxy
1200
mW
1000
Ptot
900
800
700
TS
600
TA
500
400
300
200
100
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load R
= f (t )
Permissible Pulse Load P
/P
= f (t )
thJS
p
totmax totDC p
10 2
10 2
R
Ptotmax/PtotDC
-
thJS K/W
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
10 1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
Semiconductor Group
4
Dec-16-1996
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