Q62702-P3257 [INFINEON]

Unmounted Laser Bars 20 W cw ... 100 W qcw; 卸载激光棒20瓦CW ... 100瓦准连续


型号：	Q62702-P3257
厂家：	Infineon
描述：	Unmounted Laser Bars 20 W cw ... 100 W qcw 卸载激光棒20瓦CW ... 100瓦准连续
文件：	总2页 (文件大小：23K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Unmounted Laser Bars

20 W cw ... 100 W qcw

SPL Bxxx

Features

•

Unmounted monolithic linear array

High efficiency MOVPE-grown quantum well structure

Highly reliable strained layer InGa(Al)As/GaAs material

Standard wavelength selection is ± 3 nm, others on

request

•

Solderable p- and n-side metalization

Applications

•

Pumping of solid state lasers (Nd: YAG, Yb: YAG, ...)

Direct industrial applications (soldering, surface treatment, marking, ...)

Heating, illumination

Medical and printing application

Wavelength¹⁾

Ordering Code

Type

Power

SPL BG81

SPL BG94

SPL BG98

25 W .. 30 W cw

808 nm

940 nm

980 nm

Q62702-P1654

Q62702-P1733

Q62702-P3259

SPL BS79

SPL BS81

SPL BS94

50 W .. 100 W qcw 794 nm

Q62702-P3257

Q62702-P1719

Q62702-P3258

808 nm

940 nm

1) Other wavelengths in the range of 780 ... 980 nm are available on request.

Semiconductor Group

1 / 2

1997-11-24

SPL Bxxx

Characterictics

(T_A= 25 °C)

Parameter

Symbol Wave-

length

Typical Values

Unit

BGxx

BSxx

Recommended output

power¹⁾

P_opt

–

20 ... 30

50 ... 100 W

qcw

Catastrophic optical

damage limit ^{1), 2)}

P_COD

≤ 808nm > 80

≥ 940nm > 130

> 110

> 200

Threshold current ²⁾

I_th

–

< 11

< 17

Differential quantum

efficiency ²⁾

> 0.85

W/A

Total conversion efficiency ¹⁾η_tot

–

> 35

Beam divergence (FWHM) θ × θ_||

≤ 808nm

≥ 940nm

45° × 12°

38° × 12°

Deg.

Standard pulse

wavelength ^{2), 3)}

λ_pulse

≤ 808nm 802

≥ 940nm 934

804

935

Spectral width (FWHM)

Fill factor

∆λ

–

< 4

–

Emitter width

(Structure)

200

(20 × 3)

100

–

µm

Pitch

–

400

126

µm

Bar width

(Emitters per bar)

10.0

Cavity length

Bar thickness

–

600

115 ± 10

µm

1) Depending on mounting technique, i.e. on the resulting thermal resistance.

2) Calculated from measurements on one emitter of an unmounted bar (1 µs pulses at 1 kHz repetition

rate).

3) Differing pulse wavelengths are available on request.

Semiconductor Group

2 / 2

1997-11-24

相关型号：