Q62702-S299 [INFINEON]
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level); SIPMOS小信号晶体管（P沟道增强模式的逻辑电平）
| 型号： | Q62702-S299 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) |
| 文件： | 总7页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS 284
®
SIPMOS Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
= -0.8...-1.6 V
GS(th)
Pin 1
G
Pin 2
S
Pin 3
D
Type
V
I
R
DS(on)
Package
Marking
DS
D
BSS 284
-50 V
-0.13 A 10 Ω
SOT-23
SDs
Type
Ordering Code
Tape and Reel Information
BSS 284
Q62702-S299
E6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
V
V
-50
V
DS
DGR
Ω
R
= 20 k
-50
GS
±
20
Gate source voltage
V
GS
Continuous drain current
I
A
D
T = 30 °C
-0.13
-0.52
0.36
A
DC drain current, pulsed
I
Dpuls
T = 25 °C
A
Power dissipation
P
W
tot
T = 25 °C
A
Semiconductor Group
1
18/02/1997
BSS 284
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
T
-55 ... + 150 °C
-55 ... + 150
j
T
stg
1)
Thermal resistance, chip to ambient air
R
≤ 350
K/W
thJA
1)
≤
Therminal resistance, chip-substrate- reverse side R
DIN humidity category, DIN 40 040
285
thJSR
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
V
V
(BR)DSS
GS(th)
DSS
V
= 0 V, I = -0.25 mA, T = 25 °C
-50
-
-
GS
D
j
Gate threshold voltage
=
V
V
I = -1 mA
-0.8
-1.2
-1.6
GS DS, D
Zero gate voltage drain current
I
µA
V
V
V
= -50 V, V = 0 V, T = 25 °C
-
-
-
-0.1
-2
-1
DS
DS
DS
GS
j
= -50 V, V = 0 V, T = 125 °C
-60
-0.1
GS
j
= -25 V, V = 0 V, T = 25 °C
-
GS
j
Gate-source leakage current
= -20 V, V = 0 V
I
nA
GSS
V
-
-
-1
5
-10
10
GS
DS
Drain-Source on-state resistance
= -10 V, I = -0.13 A
R
Ω
DS(on)
V
GS
D
Semiconductor Group
2
18/02/1997
BSS 284
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
S
fs
≥
V
2 I
R I = -0.13 A
0.05
0.08
30
17
8
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = -25 V, f = 1 MHz
C
C
C
pF
iss
V
-
-
-
40
25
12
GS
DS
Output capacitance
= 0 V, V = -25 V, f = 1 MHz
oss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = -25 V, f = 1 MHz
rss
V
GS
DS
Turn-on delay time
= -30 V, V = -10 V, I = -0.27 A
t
t
t
t
ns
d(on)
V
DD
GS
D
Ω
R
= 50
-
-
-
-
7
10
18
13
27
GS
Rise time
= -30 V, V = -10 V, I = -0.27 A
r
V
DD
GS
D
Ω
R
= 50
12
10
20
GS
Turn-off delay time
= -30 V, V = -10 V, I = -0.27 A
d(off)
V
DD
GS
D
R
= 50 Ω
GS
Fall time
= -30 V, V = -10 V, I = -0.27 A
f
V
DD
GS
D
R
= 50 Ω
GS
Semiconductor Group
3
18/02/1997
BSS 284
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Inverse diode continuous forward current I
A
S
T = 25 °C
-
-
-
-
-0.13
-0.52
-1.2
A
Inverse diode direct current,pulsed
I
SM
T = 25 °C
-
A
Inverse diode forward voltage
V
V
SD
V
= 0 V, I = -0.26 A, T = 25 °C
-0.9
GS
F
j
Semiconductor Group
4
18/02/1997
BSS 284
Power dissipation
Drain current
ƒ
ƒ
I = (T )
D A
P
= (T )
tot
A
≥
parameter: V
-10 V
GS
0.40
W
-0.14
A
-0.12
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
Ptot
ID
-0.11
-0.10
-0.09
-0.08
-0.07
-0.06
-0.05
-0.04
-0.03
-0.02
-0.01
0.00
0.00
0
20
40
60
80 100 120
°C 160
TA
0
20
40
60
80 100 120
°C 160
TA
Safe operating area I =f(V
)
DS
Drain-source breakdown voltage
D
ƒ
parameter : D = 0.01, T =25°C
V
= (T )
C
(BR)DSS
j
-60
V
-58
-57
V(BR)DSS
-56
-55
-54
-53
-52
-51
-50
-49
-48
-47
-46
-45
-60
-20
20
60
100
°C
Tj
160
Semiconductor Group
5
18/02/1997
BSS 284
Typ. output characteristics
ƒ(
Typ. drain-source on-resistance
ƒ(
I =
V
)
R
=
I )
D
D
DS
DS (on)
parameter: t = 80 µs , T = 25 °C
parameter: t = 80 µs, T = 25 °C
p j
p
j
32
-0.30
A
P
tot = 0W
k
a
b
c
d
e
j
i
l
h
Ω
-0.26
-0.24
-0.22
-0.20
-0.18
-0.16
-0.14
-0.12
-0.10
-0.08
-0.06
-0.04
V
[V]
GS
a
ID
RDS (on)
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-6.0
-7.0
-8.0
-9.0
24
20
16
12
8
b
c
d
e
f
g
f
g
h
i
e
c
j
k
l
f
-10.0
d
b
g
h
i
j
V
[V] =
GS
a
4
0
b
c
d
e
f
g
h
i
j
-0.02
0.00
-3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
a
0.0
-1.0
-2.0
-3.0
-4.0
V
-5.5
0.00
-0.04
-0.08
-0.12
-0.16
A
-0.24
VDS
ID
Typ. transfer characteristics I = f(V
)
Typ. forward transconductance g = f (I )
D
GS
fs
D
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
≥
V 2 x I x R
DS D DS(on)max
V
DS
≥ 2 x I x R
D
DS(on)max
-0.9
A
0.16
S
ID
gfs
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
0.12
0.10
0.08
0.06
0.04
0.02
0.00
-0.1
0.0
0
-1 -2 -3 -4 -5 -6 -7 -8
V
VGS
-10
0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6
A
ID
-0.8
Semiconductor Group
6
18/02/1997
BSS 284
Drain-source on-resistance
Gate threshold voltage
ƒ
ƒ
= (T )
GS (th) j
R
= (T )
V
DS (on)
j
parameter: I = -0.13 A, V = -10 V
parameter: V = V , I = -1 mA
GS DS D
D
GS
26
-2.6
V
Ω
22
20
18
16
14
12
10
8
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
RDS (on)
VGS(th)
98%
typ
98%
typ
2%
6
4
2
0
-0.2
0.0
-60
-20
20
60
100
°C
Tj
160
-60
-20
20
60
100
°C
Tj
160
Typ. capacitances
Forward characteristics of reverse diode
ƒ
C = f (V )
I = (V
)
DS
F
SD
parameter: T , t = 80 µs
parameter:V =0V, f = 1 MHz
j
p
GS
10 3
-10 0
pF
A
C
IF
10 2
10 1
10 0
-10 -1
-10 -2
-10 -3
Ciss
Coss
Tj = 25 °C typ
Crss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0
-5
-10 -15 -20 -25 -30
V
VDS
-40
0.0
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
V
-3.0
VSD
7
18/02/1997
Semiconductor Group
相关型号：
Q62702-S482
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
INFINEON
©2020 ICPDF网 联系我们和版权申明