Q62702-Z2026 [INFINEON]
NPN Silicon Switching Transistors; 硅NPN开关晶体管型号: | Q62702-Z2026 |
厂家: | Infineon |
描述: | NPN Silicon Switching Transistors |
文件: | 总6页 (文件大小:130K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NPN Silicon Switching Transistors
PZT 2222
PZT 2222 A
● High DC current gain: 0.1 mA to 500 mA
● Low collector-emitter saturation voltage
● Complementary types: PZT 2907 (PNP)
PZT 2907 A (PNP)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
4
PZT 2222
ZT 2222
Q62702-Z2026
B
C
E
C
SOT-223
PZT 2222 A
ZT 2222 A Q62702-Z2027
Maximum Ratings
Parameter
Symbol
Values
Unit
PZT 2222
PZT 2222 A
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
VCE0
VCB0
VEB0
30
60
5
40
75
6
V
Collector current
I
C
600
mA
W
Total power dissipation, TS = 110 ˚C
Junction temperature
P
tot
1.5
T
j
150
˚C
Storage temperature range
T
stg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 87
≤ 27
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
PZT 2222
PZT 2222 A
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 10 mA, I
B
= 0
PZT 2222
30
40
–
–
–
–
PZT 2222 A
Collector-base breakdown voltage
= 10 µA, I = 0
IC
B
PZT 2222
60
75
–
–
–
–
PZT 2222 A
Emitter-base breakdown voltage
= 10 µA, I = 0
IE
E
PZT 2222
5
6
–
–
–
–
PZT 2222 A
Collector-base cutoff current
I
CB0
V
CB = 50 V, I
E
= 0
PZT 2222
PZT 2222 A
PZT 2222
–
–
–
–
–
–
–
–
20
10
20
10
nA
nA
µA
µA
V
CB = 50 V, I
E
= 0, T = 150 ˚C
A
PZT 2222 A
Emitter-base cutoff current
= 0
IEB0
ICEV
IEBV
–
–
–
–
–
–
10
50
50
nA
V
EB = 3 V, I
C
Collector-emitter cutoff current
VCE = 30 V, – VBE = 0.5 V
Emitter-base cutoff current
VCE = 30 V, – VBE = 0.5 V
DC current gain1)
h
FE
–
35
50
75
100
30
40
–
–
–
–
–
–
–
–
–
300
–
IC
IC
IC
IC
IC
= 0.1 mA, VCE = 10 V
= 1 mA, VCE = 10 V
= 10 mA, VCE = 10 V
= 150 mA, VCE = 10 V
= 500 mA, VCE = 10 V
PZT 2222
PZT 2222 A
–
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
PZT 2222
PZT 2222 A
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter saturation voltage1)
V
V
CEsat
V
–
–
–
–
–
–
–
–
0.4
0.3
1.6
1.0
IC
= 150 mA, I
B
= 15 mA
PZT 2222
PZT 2222 A
PZT 2222
IC
= 500 mA, I
B
= 50 mA
PZT 2222 A
Base-emitter saturation voltage1)
BEsat
–
–
–
–
–
–
–
–
1.3
1.2
2.6
2.0
I
C
= 150 mA, I
B
= 15 mA
PZT 2222
PZT 2222 A
PZT 2222
IC
= 500 mA, I
B
= 50 mA
PZT 2222 A
AC characteristics
Transition frequency
f
T
200
–
–
–
–
–
MHz
pF
I
C
= 20 mA, VCE = 20 V, f = 100 MHz
Collector-base capacitance
CB = 10 V, f = 1 MHz
Input capacitance
C
obo
ibo
8
V
C
–
30
VEB = 0.5 V, f = 1 MHz
V
CC = 30 V, I
C
= 150 mA, IB1 = 15 mA
Delay time
Rise time
t
t
d
r
–
–
–
–
10
25
ns
ns
V
CC = 30 V, I
C
= 150 mA, IB1 = IB2 = 15 mA
Storage time
Fall time
t
t
stg
f
–
–
–
–
225
60
ns
ns
(see diagrams)
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
PZT 2222
PZT 2222 A
Input waveform and test circuit for determining delay, rise and turn-on time
Turn-on time when switched to ICon = 150 mA; IBon = 15 mA
Input waveform and test circuit for determining storage, fall and turn-off time
Turn-off time when switched to ICon = 150 mA; IBon = 15 mA to cut-off with – IBoff = 15 mA
Pulse generator:
Oscillograph:
duty factor
D = 2 %
rise time
tr ≤ 5 ns
pulse duration
rise time
t
t
p
= 200 ns
output impedance
Zi = 10 MΩ
r ≤ 2 ns
output impedance
Zo = 50Ω
Semiconductor Group
4
PZT 2222
PZT 2222 A
Total power dissipation Ptot = f (T
A
*; TS
)
Transition frequency f
T
= f (I )
C
* Package mounted on epoxy
VCE = 20 V, f = 100 MHz
Saturation voltage I
C
= f (VBEsat, VCEsat
)
DC current gain hFE = f (I )
C
h
FE = 10
VCE = 10 V
Semiconductor Group
5
PZT 2222
PZT 2222 A
Permissible pulse load Ptot max/Ptot DC = f (t )
p
Semiconductor Group
6
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