Q67000-A9310-A702 [INFINEON]

High Performance Power Combi Controller; 高性能电源控制器Combi机
Q67000-A9310-A702
型号: Q67000-A9310-A702
厂家: Infineon    Infineon
描述:

High Performance Power Combi Controller
高性能电源控制器Combi机

控制器
文件: 总39页 (文件大小:455K)
中文:  中文翻译
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High Performance Power Combi Controller  
TDA 16888  
1
Overview  
1.1  
Features  
PFC Section  
– IEC 1000-3 compliant  
– Additional operation mode as auxiliary power supply  
– Fast, soft switching totem pole gate drive (1 A)  
– Dual loop control (average current and voltage  
sensing)  
P-DIP-20-5  
– Leading edge triggered pulse width modulation  
– Peak current limitation  
– Topologies of PFC preconverter are boost or flyback  
– Continuous/discontinuous mode possible  
– 94% maximum duty cycle  
P-DSO-20-1  
PWM Section  
– Improved current mode control  
– Fast, soft switching totem pole gate drive (1 A)  
– Soft-start management  
– Trailing edge triggered pulse width modulation  
– Topologies of PWM converter are feed forward or flyback  
– 50% maximum duty cycle to prevent transformer saturation  
fPWM = fPFC  
Type  
Ordering Code  
Package  
TDA 16888  
TDA 16888G  
Q67000-A9284-X201-K5  
Q67000-A9310-A702  
P-DIP-20-5  
P-DSO-20-1  
New type  
Semiconductor Group  
1
Data Sheet 1998-05-06  
TDA 16888  
Special Features  
– High power factor  
– Typical 50 µA start-up supply current  
– Low quiescent current (15 mA)  
– Undervoltage lockout with internal stand-by operation  
– Internally synchronized fixed operating frequency ranging from 15 kHz to 200 kHz  
– External synchronization possible  
– Shutdown of both outputs externally triggerable  
– Peak current limitation  
– Overvoltage protection  
– Average current sensing by noise filtering  
1.2  
General Remarks  
The TDA 16888 comprises the complete control for power factor controlled switched  
mode power supplies. With its PFC and PWM section being internally synchronized, it  
applies for off-line converters with input voltages ranging from 90 V to 270 V.  
While the preferred topologies of the PFC preconverter are boost or flyback, the PWM  
section can be designed as forward or flyback converter. In order to achieve minimal line  
current gaps the maximum duty cycle of the PFC is about 94%. The maximum duty cycle  
of the PWM, however, is limited to 50% to prevent transformer saturation.  
Semiconductor Group  
2
Data Sheet 1998-05-06  
TDA 16888  
P-DIP-20-5  
P-DSO-20-1  
PFC IAC  
VREF  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
AUX VS  
PFC VS  
PFC VC  
PFC FB  
ROSC  
PFC CC  
PFC CS  
GND S  
PFC CL  
GND  
3
1
2
3
4
5
6
7
8
9
10  
20  
PFC IAC  
VREF  
AUX VS  
PFC VS  
PFC VC  
PFC FB  
ROSC  
19  
18  
17  
16  
15  
14  
13  
12  
11  
4
PFC CC  
PFC CS  
GND S  
PFC CL  
GND  
5
PWM RMP  
PWM IN  
PWM SS  
SYNC  
6
PWM RMP  
PWM IN  
PWM SS  
SYNC  
7
PFC OUT  
VCC  
PFC OUT  
VCC  
8
PWM OUT  
PWM CS  
9
AEP02486  
PWM OUT  
10  
PWM CS  
AEP02461  
Figure 1  
Pin Configuration (top view)  
Semiconductor Group  
3
Data Sheet 1998-05-06  
TDA 16888  
1.3  
Pin No.  
1
Pin Definitions and Functions  
Symbol  
PFC IAC  
VREF  
Function  
AC line voltage sensing input  
7.5 V reference  
2
3
PFC CC  
PFC CS  
GND S  
PFC current loop compensation  
PFC current sense  
4
5
Ground sensing input  
6
PFC CL  
GND  
Sensing input for PFC current limitation  
Ground  
7
8
PFC OUT  
VCC  
PFC driver output  
9
Supply voltage  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
PWM OUT  
PWM CS  
SYNC  
PWM driver output  
PWM current sense  
Oscillator synchronization input  
PWM soft-start  
PWM SS  
PWM IN  
PWM RMP  
ROSC  
PWM output voltage sensing input  
PWM voltage ramp  
Oscillator frequency set-up  
PFC voltage loop feedback  
PFC voltage loop compensation  
PFC output voltage sensing input  
Auxiliary power supply voltage sense  
PFC FB  
PFC VC  
PFC VS  
AUX VS  
Semiconductor Group  
4
Data Sheet 1998-05-06  
TDA 16888  
1.4  
Block Diagram  
V
V
V
V
V
R
1
R
Ι
V
V
R
Figure 2  
Semiconductor Group  
5
Data Sheet 1998-05-06  
TDA 16888  
2
Functional Description  
Power Supply  
The TDA 16888 is protected against overvoltages typically above 17.5 V by an internal  
Zener diode Z3 at pin 9 (VCC) and against electrostatic discharging at any pin by special  
ESD circuitry.  
By means of its power management the TDA 16888 will switch from internal stand-by,  
which is characterized by negligible current consumption, to operation mode as soon as  
a supply voltage threshold of 14 V at pin 9 (VCC) is exceeded. To avoid uncontrolled  
ringing at switch-over an undervoltage lockout is implemented, which will cause the  
power management to switch from operation mode to internal stand-by as soon as the  
supply voltage falls below a threshold of 11 V. Therefore, even if the supply voltage will  
fall below 14 V, operation mode will be maintained as long as the supply voltage is well  
above 11 V.  
As soon as the supply voltage has stabilized, which is determined by the TDA 16888’s  
power management and its soft-start feature at pin 13 (PWM SS), the PWM section will  
be enabled by means of its internal bias control.  
Protection Circuitry  
Both PFC and PWM section are equipped with a fast overvoltage protection (C6)  
sensing at pin 19 (PFC VS), which when being activated will immediately shut down both  
gate drives. In addition to improve the PFC section’s load regulation it uses a fast but soft  
overvoltage protection (OTA2) prior to the one described above, which when being  
activated will cause a well controlled throttling of the multiplier output QM.  
In case an undervoltage of the PFC output voltage is detected at pin 19 (PFC VS) by  
comparator C4 the gate drive of the PWM section will be shut down in order to reduce  
the load current and to increase the PFC output voltage. This undervoltage shutdown  
has to be prior to the undervoltage lockout of the internal power management and  
therefore has to be bound to a threshold voltage at pin 9 (VCC) well above 11 V.  
In order to prevent the external circuitry from destruction the PFC output PFC OUT  
(pin 8) will immediately be switched off by comparator C2, if the voltage at pin 19  
(PFC VS) drops to ground caused by a broken wire. In a similar way measures are taken  
to handle a broken wire at any other pin in order to ensure a safe operation of the IC and  
its adjoining circuitry.  
If necessary both outputs, PFC OUT (pin 8) and PWM OUT (pin 10), can be shutdown  
on external request. This is accomplished by shorting the external reference voltage at  
pin 2 (VREF) to ground. To protect the external reference, it is equipped with a foldback  
characteristic, which will cut down the output current when VREF (pin 2) is shorted (see  
Figure 4).  
Semiconductor Group  
6
Data Sheet 1998-05-06  
 
TDA 16888  
Both PFC and PWM section are equipped with a peak current limitation, which is realized  
by the comparators C3 and C9 sensing at pin 6 (PFC CL) and pin 11 (PWM CS)  
respectively. When being activated this current limitation will immediately shut down the  
respective gate drive PFC OUT (pin 8) or PWM OUT (pin 10).  
Finally each pin is protected against electrostatic discharge.  
Oscillator/Synchronization  
The PFC and PWM clock signals as well as the PFC voltage ramp are synchronized by  
the internal oscillator (see Figure 18). The oscillator’s frequency is set by an external  
resistor connected to pin 16 (ROSC) and ground (see Figure 5). The corresponding  
capacitor, however, is integrated to guarantee a low current consumption and a high  
resistance against electromagnetic interferences. In order to ensure superior precision  
of the clock frequency, the clock signal CLK OSC is derived from a triangular instead of  
a saw-tooth signal. Furthermore to provide a clock reference CLK OUT with exactly 50%  
duty cycle, the frequency of the oscillator’s clock signal CLK OSC is halved by a D-latch  
before being fed into the PFC and PWM section respectively (see Figure 18).  
The ramp signal of the PFC section VPFC RMP is composed of a slowly falling and a  
steeply rising edge. This ramp has been reversed in contrast to the common practice, in  
order to simultaneously allow for current measurement at pin 5 (GND S) and for external  
compensation of OP2 by means of pin 5 (GND S) and pin 3 (PFC CC).  
The oscillator can be synchronized with an external clock signal supplied at pin 12  
(SYNC). However, since the oscillator’s frequency is halved before being fed into the  
PFC and PWM section, a synchronization frequency being twice the operating frequency  
is recommended. As long as the synchronization signal is H the oscillator’s triangular  
signal VOSC is interrupted and its clock signal CLK OSC is H (see Figure 19 and  
Figure 20). However, as soon as the external clock changes from H to L the oscillator is  
released. Correspondingly, by means of an external clock signal supplied at pin 12  
(SYNC) the oscillator frequency fOSC set by an external resistor at pin 16 (ROSC) can be  
varied on principle only within the range from 0.66 fOSC to 2 fOSC. If the oscillator has to  
be synchronized over a wider frequency range, a synchronization by means of the sink  
current at pin 16 (ROSC) has to be preferred to a synchronization by means of pin 12  
(SYNC). Anyhow, please note, that pin 12 (SYNC) is not meant to permanently  
shutdown both PFC and PWM section. It can be used to halt the oscillator freezing the  
prevailing state of both drivers but does not allow to automatically shut them down. A  
shutdown can be achieved by shorting pin 2 (VREF) to ground, instead.  
Finally, In order to reduce the overall current consumption under low load conditions, the  
oscillator frequency itself is halved as long as the voltage at pin 13 (PWM SS) is less  
than 0.4 V (disabled PWM section).  
Semiconductor Group  
7
Data Sheet 1998-05-06  
TDA 16888  
PFC Section  
At normal operation the PFC section operates with dual loop control. An inner loop,  
which includes OP2, C1, FF1 and the PFC’s driver, controls the shape of the line current  
by average current control enabling either continuous or discontinuous operation. By the  
outer loop, which is supported by OP1, the multiplier, OP2, C1, FF1 and the PFC's driver,  
the PFC output voltage is controlled. Furthermore there is a third control loop composed  
of OTA1, OP2, C1, FF1 and the PFC’s driver, which allows the PFC section to be  
operated as an auxiliary power supply even when the PWM section is disabled. With  
disabled PWM section, however, the PFC section is operated with half of its nominal  
operating frequency in order to reduce the overall current consumption.  
Based on a pulse-width-modulation, which is leading edge triggered with respect to the  
internal clock reference CLK OUT and which is trailing edge modulated according to the  
PFC ramp signal VPFC RMP and the output voltage of OP2 VPFC CC (see Figure 18), the  
PFC section is designed for a maximum duty cycle of ca. 94% to achieve minimal line  
current gaps.  
PWM Section  
The PWM section is equipped with improved current mode control containing effective  
slope compensation as well as enhanced spike suppression in contrast to the commonly  
used leading edge current blanking. This is achieved by the chain of operational amplifier  
OP3, voltage source V1 and the 1st order low pass filter composed of R1 and an external  
capacitor, which is connected to pin 15 (PWM RMP). For crosstalk suppression between  
PFC and PWM section a signal-to-noise ratio comparable to voltage mode controlled  
PWM’s is set by operational amplifier OP3 performing a fivefold amplification of the PWM  
load current, which is sensed by an external shunt resistor. In order to simultaneously  
perform effective slope compensation and to suppress leading spikes, which are due to  
parasitic capacitances being discharged whenever the power transistor is switched on,  
the resulting signal is subsequently increased by the constant voltage of V1 and finally  
fed into the 1st order low pass filter. The peak ramp voltage, that in this way can be  
reached, amounts to ca. 6.5 V. By combination of voltage source V1 and the following  
low pass filter a basic ramp (step response) with a leading notch is created, which will  
fully compensate a leading spike (see Figure 12) provided, the external capacitor at  
pin 15 (PWM RMP) and the external current sensing shunt resistor are scaled properly.  
Semiconductor Group  
8
Data Sheet 1998-05-06  
TDA 16888  
The pulse-width-modulation of the PWM section is trailing edge modulated according to  
the PWM ramp signal VPWM RMP at pin 15 (PWM RMP) and the input voltage VPWM IN at  
pin 14 (PWM IN) (see Figure 18). In contrast to the PFC section, however, the pulse-  
width-modulation of the PWM section is trailing edge triggered with respect to the  
internal clock reference CLK OUT in order to avoid undesirable electromagnetic  
interference of both sections. Moreover the maximum duty cycle of the PWM is limited  
to 50% to prevent transformer saturation.  
By means of the above mentioned improved current mode control a stable pulse-width-  
modulation from maximum load down to no load is achieved. Finally, in case of no load  
conditions the PWM section may as well be disabled by shorting pin 13 (PWM SS) to  
ground.  
Semiconductor Group  
9
Data Sheet 1998-05-06  
TDA 16888  
3
Functional Block Description  
Gate Drive  
Both PFC and PWM section use fast totem pole gate drives at pin 8 (PFC OUT) and  
pin 10 (PWM OUT) respectively, which are designed to avoid cross conduction currents  
and which are equipped with Zener diodes (Z1, Z2) in order to improve the control of the  
attached power transistors as well as to protect them against undesirable gate  
overvoltages. At voltages below the undervoltage lockout threshold these gate drives are  
active low. In order to keep the switching losses of the involved power diodes low and to  
minimize electromagnetic emissions, both gate drives are optimized for soft switching  
operation. This is achieved by a novel slope control of the rising edge at each driver’s  
output (see Figure 13).  
Oscillator  
The TDA 16888’s clock signals as well as the PFC voltage ramp are provided by the  
internal oscillator. The oscillator’s frequency is set by an external resistor connected to  
pin 16 (ROSC) and ground (see Figure 5). The corresponding capacitor, however, is  
integrated to guarantee a low current consumption and a high resistance against  
electromagnetic interferences. In order to ensure superior precision of the clock  
frequency, the clock signal CLK OSC is derived from the minima and maxima of a  
triangular instead of a saw-tooth signal (see Figure 18). Furthermore, to provide a clock  
reference CLK OUT with exactly 50% duty cycle, the frequency of the oscillator’s clock  
signal CLK OSC is halved by a D-latch before being fed into the PFC and PWM section  
respectively.  
The ramp signal of the PFC section VPFC RMP is composed of a slowly falling and a  
steeply rising edge, the latter of which is triggered by the rising edge of the clock  
reference CLK OUT. This ramp has been reversed in contrast to the common practice,  
in order to simultaneously allow for current measurement at pin 5 (GND S) and for  
external compensation of OP2 by means of pin 5 (GND S) and pin 3 (PFC CC). The  
slope of the falling edge, which in conjunction with the output of OP2 controls the pulse-  
width-modulation of the PFC output signal VPFC OUT, is derived from the current set by the  
external resistor at pin 16 (ROSC). In this way a constant amplitude of the ramp signal  
(ca. 4.5 V) is ensured. In contrast, the slope of the rising edge, which marks the minimum  
blanking interval and therefore limits the maximum duty cycle ton,max of the PFC output  
signal, is determined by an internal current source.  
In contrast to the PFC section the ramp signal of the PWM section is trailing edge  
triggered with respect to the internal clock reference CLK OUT to avoid undesirable  
electromagnetic interference of both sections. Moreover, the maximum duty cycle of the  
PWM is limited by the rising edge of the clock reference CLK OUT to 50% to prevent  
transformer saturation.  
Semiconductor Group  
10  
Data Sheet 1998-05-06  
TDA 16888  
The oscillator can be synchronized with an external clock signal supplied at pin 12  
(SYNC). As long as this clock signal is H the oscillator’s triangular signal VOSC is  
interrupted and its clock signal CLK OSC is H (see Figure 19 and Figure 20). However,  
as soon as the external clock changes from H to L the oscillator is released.  
Correspondingly, by means of an external clock signal supplied at pin 12 (SYNC) the  
oscillator frequency fOSC set by an external resistor at pin 16 (ROSC) can be varied on  
principle only within the range from 0.66 fOSC to 2 fOSC. Please note, that the slope of the  
falling edge of the PFC ramp is not influenced by the synchronization frequency. Instead  
the lower voltage peak is modulated. Consequently, on the one hand at high  
synchronization frequencies fSYNC > fOSC the amplitude of the ramp signal and  
correspondingly its signal-to-noise ratio is decreased (see Figure 19). On the other hand  
at low synchronization frequencies fSYNC < fOSC the lower voltage peak is clamped to the  
minimum ramp voltage (typ. 1.1 V), that at least can be achieved (see Figure 20), which  
may cause undefined PFC duty cycles as the voltage VPFC CC at pin 3 (PFC CC) drops  
below this threshold. However, if the oscillator has to be synchronized over a wide  
frequency range, a synchronization by means of the sink current at pin 16 (ROSC) has  
to be preferred to a synchronization by means of pin 12 (SYNC).  
In order to reduce the overall current consumption under low load conditions, the  
oscillator frequency itself is halved as long as the voltage at pin 13 (PWM SS) is less  
than 0.4 V (disabled PWM section).  
Multiplier  
The multiplier serves to provide the controlled current IQM by combination of the shape  
of the sinusoidal input current IM1 derived from the voltage at pin 1 (PFC IAC) by means  
of the 10 kresistor R2, the magnitude of the PFC output voltage VM2 given at pin 18  
Chapter  
(PFC VC) and the possibility for soft overvoltage protection VM3 (see  
Protection Circuitry  
). By means of this current the required power factor as well as the  
magnitude of the PFC output voltage is ensured. To achieve an excellent performance  
over a wide range of output power and input voltage, the input voltage VM2 is amplified  
by an exponential function before being fed into the multiplier (see Figure 8).  
Voltage Amplifier OP1  
Being part of the outer loop the error amplifier OP1 controls the magnitude of the PFC  
output voltage by comparison of the PFC output voltage measured at pin 17 (PFC FB)  
with an internal reference voltage. The latter is fixed to 5 V in order to achieve immunity  
from external noise. To allow for individual feedback the output of OP1 is connected to  
pin 18 (PFC VC).  
Semiconductor Group  
11  
Data Sheet 1998-05-06  
TDA 16888  
Current Amplifier OP2  
Being part of the inner loop the error amplifier OP2 controls the shape of the line current  
by comparison of the controlled current IQM with the measured average line current. This  
is achieved by setting the pulse width of the PFC gate drive in conjunction with the  
comparator C1. In order to limit the voltage range supplied at pin 4 (PFC CS) and at pin 5  
(GND S), clamping diodes D1, D2 and D3 are connected with these pins and ground. To  
allow for individual feedback the output of OP2 is connected to pin 3 (PFC CC).  
Ramp Amplifier OP3  
For crosstalk suppression between PFC and PWM section a signal-to-noise ratio  
comparable to voltage mode controlled PWMs is set by operational amplifier OP3  
performing a fivefold amplification of the PWM load current, which is sensed by an  
external shunt resistor. In order to suppress leading spikes, which are due to parasitic  
capacitances being discharged whenever the power transistor is switched on, the  
resulting signal is subsequently increased by the constant voltage of V1 and finally fed  
into a 1st order low pass filter. By combination of voltage source V1 and the following low  
pass filter a step response with a leading notch is created, which will fully compensate a  
leading spike (see Figure 12) provided, the external capacitor at pin 15 (PWM RMP)  
and the external current sensing shunt resistor are scaled properly.  
Operational Transconductance Amplifier OTA1  
The TDA 16888’s auxiliary power supply mode is controlled by the fast operational  
transconductance amplifier OTA1. When under low load or no load conditions a voltage  
below 5 V is sensed at pin 20 (AUX VS), it will start to superimpose its output on the  
output QM of the multiplier and in this way will replace the error amplifier OP1 and the  
multiplier. At normal operation, however, when the voltage at pin 20 (AUX VS) is well  
above 5 V, this operational transconductance amplifier is disabled.  
Operational Transconductance Amplifier OTA2  
By means of the operational transconductance amplifier OTA2 sensing at pin 19  
(PFC VS) a fast but soft overvoltage protection of the PFC output voltage is achieved,  
which when being activated (VPFC VS > 5.5 V) will cause a well controlled throttling of the  
multiplier output QM (see Figure 9).  
Operational Transconductance Amplifier OTA3  
In order to achieve offset compensation of error amplifier OP2 under low load conditions,  
that will not suffice to start OTA1, the operational transconductance amplifier OTA3 is  
introduced. It will start operation as soon as these conditions are reached, i.e. the voltage  
at pin 18 (PFC VC) falls below 1.2 V.  
Semiconductor Group  
12  
Data Sheet 1998-05-06  
TDA 16888  
Comparator C1  
The comparator C1 serves to adjust the duty cycle of the PFC gate drive. This is  
achieved by comparison of the output voltage of OP2 given at pin 3 (PFC CC) and the  
voltage ramp of the oscillator.  
Comparator C2  
The comparator C2 serves to prevent the external circuitry from destruction by  
immediately switching the PFC output PFC OUT (pin 8) off, if the voltage at pin 19  
(PFC VS) drops below 1 V due to a broken wire.  
Comparator C3  
By means of this extremely fast comparator sensing at pin 6 (PFC CL) peak current  
limitation is realized. When being activated (VPFC CL < 1 V) it will immediately shut down  
the gate drive of the PFC section (pin 8, PFC OUT). In order to protect C3 against  
undervoltages at pin 6 (PFC CL) due to large inrush currents, this pin is equipped with  
an additional clamping diode D4.  
Comparator C4  
This comparator along with the TDA 16888’s power management serves to reset the  
PWM section’s soft start at pin 13 (PWM SS). C4 becomes active as soon as an  
undervoltage (VPFC VS < 4 V) of the PFC output voltage is sensed at pin 19 (PFC VS).  
Comparator C5  
Based on the status of the PWM section’s soft start at pin 13 (PWM SS), the comparator  
C5 controls the bias of the entire PWM section. In this way the PWM section is switched  
off giving a very low quiescent current, until its soft start is released.  
Comparator C6  
Overvoltage protection of the PWM section’s input voltage sensed at pin 19 (PFC VS) is  
realized by comparator C6, which when being activated will immediately shut down both  
gate drives PFC OUT (pin 8) and PWM OUT (pin 10).  
Comparator C7  
This comparator sensing at pin 13 (PWM SS) and at pin 15 (PWM RMP) controls the  
pulse width modulation of the PWM section during the soft start. This is done right after  
the PWM section is biased by comparator C5.  
Semiconductor Group  
13  
Data Sheet 1998-05-06  
TDA 16888  
Comparator C8  
The control of the pulse width modulation of the PWM section is taken over by  
comparator C8 as soon as the soft start is finished. This is achieved by comparison of  
the PWM output voltage at pin 14 (PWM IN) and the PWM voltage ramp at pin 15  
(PWM RMP).  
Comparator C9  
By means of this extremely fast comparator sensing at pin 11 (PWM CS) peak current  
limitation is realized. When being activated (VPWM CS > 1 V) it will immediately shut down  
the gate drive of the PWM section (PWM OUT).  
Comparator C10  
By means of the threshold of 0.4 V the comparator C10 allows the PWM duty cycle to be  
continuously controlled from 0 to 50%. As long as the ramp voltage at pin 15  
(PWM RMP) is below this threshold the gate drive of the PWM section (pin 10,  
PWM OUT) is turned off.  
Semiconductor Group  
14  
Data Sheet 1998-05-06  
TDA 16888  
4
Electrical Characteristics  
4.1  
Absolute Maximum Ratings  
TA = – 25 to 85 °C  
Parameter#  
Symbol Limit Values Unit Remarks  
min. max.  
VCC supply voltage  
VS  
– 0.3 VZ3  
50  
V
VZ3 = Zener voltage of Z3  
Zener current of Z3  
IZ3  
mA  
V
VREF voltage  
VVREF  
VROSC  
VSYNC  
VPFC FB  
– 0.3 8  
– 0.3 8  
– 0.3 8  
– 0.3 8  
V
V
VREF < VS  
ROSC voltage  
V
ROSC < VS  
SYNC voltage  
V
PFC FB voltage  
PFC IAC voltage  
AUX VS voltage  
PFC VS voltage  
PFC CL voltage  
PWM SS voltage  
PWM IN voltage  
PWM RMP voltage  
PWM CS voltage  
PFC VC voltage  
PFC VC current  
PFC CS current  
GND S current  
PFC CC voltage  
PFC CC current  
V
VPFC IAC – 0.3 15  
V
VAUX VS  
VPFC VS  
VPFC CL  
– 0.3 8  
– 0.3 8  
– 0.3 3  
V
V
|IPFC VS| < 1 mA  
V
VPWM SS – 0.3 8  
– 0.3 8  
V
V
V
PWM SS < VVREF  
VPWM IN  
V
VPWM RMP – 0.3 8  
VPWM CS – 0.3 3  
V
PWM RMP < VVREF  
V
VPFC VC  
IPFC VC  
IPFC CS  
IGND S  
VPFC CC  
IPFC CC  
IOUT  
– 0.3 8  
V
– 20 20  
mA  
mA  
mA  
V
– 5  
– 5  
5
5
– 0.3 8  
– 20 20  
– 100 100  
mA  
mA  
PFC/PWM OUT DC  
current  
PFC/PWM OUT peak  
clamping current  
IOUT  
IOUT  
TJ  
200  
mA  
mA  
°C  
V
V
OUT = High  
PFC/PWM OUT peak  
clamping current  
– 500 –  
OUT = Low  
Junction temperature  
– 40 150  
Semiconductor Group  
15  
Data Sheet 1998-05-06  
TDA 16888  
4.1  
Absolute Maximum Ratings (cont’d)  
TA = – 25 to 85 °C  
Parameter#  
Symbol Limit Values Unit Remarks  
min. max.  
Storage temperature  
Thermal resistance  
Thermal resistance  
TS  
– 65 150  
°C  
RthJA  
RthJA  
60  
70  
K/W  
K/W  
P-DIP-20-5  
P-DSO-20-1  
Note: Absolute maximum ratings are defined as ratings, which when being exceeded  
may lead to destruction of the integrated circuit. To avoid destruction make sure,  
that for any pin except for pins PFC OUT and PWM OUT the currents caused by  
transient processes stay well below 100 mA. For the same reason make sure, that  
any capacitor that will be connected to pin 9 (VCC) is discharged before  
assembling the application circuit. In order to characterize the gate driver’s output  
performance Figure 14, Figure 15, Figure 16 and Figure 17 are provided,  
instead of referring just to a single parameter like the maximum gate charge or the  
maximum output energy.  
4.2  
Operating Range  
Parameter  
Symbol Limit Values Unit Remarks  
min. max.  
VCC supply voltage  
VS  
IZ3  
0
VZ3  
50  
V
VZ3 = Zener voltage of Z3  
Zener current  
0
mA  
A
Limited by TJ,max  
PFC/PWM OUT current IOUT  
– 1  
0
1.5  
1
PFC IAC input current  
PFC/PWM frequency  
Junction temperature  
IPFC IAC  
mA  
kHz  
°C  
fOUT  
TJ  
15  
– 25  
200  
125  
Note: Within the operating range the IC operates as described in the functional  
description. In order to characterize the gate driver’s output performance  
Figure 14, Figure 15, Figure 16 and Figure 17 are provided, instead of referring  
just to a single parameter like the maximum gate charge or the maximum output  
energy.  
Semiconductor Group  
16  
Data Sheet 1998-05-06  
TDA 16888  
4.3  
Characteristics  
Supply Section  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
Unit  
Test Condition  
Zener voltage1)  
Zener current  
VZ3  
IZ3  
IS  
16.0  
17.5  
19.0  
500  
12  
V
IZ3 = 30 mA  
VS 15.5 V2)  
µA  
mA  
Quiescent supply  
current  
V
R
PWM SS = 0 V  
ROSC = 51 kΩ  
CL = 0 V  
PFC enabled  
PWM disabled  
15  
40  
mA  
mA  
V
R
PWM SS = 6 V  
ROSC = 51 kΩ  
CL = 0 F  
PFC enabled  
PWM enabled  
Supply current  
IS  
V
R
PWM SS = 6 V  
ROSC = 51 kΩ  
CL = 4.7 nF  
PFC enabled  
PWM enabled  
1)  
See Figure 3  
2)  
Design characteristics (not meant for production testing)  
Note: The electrical characteristics involve the spread of values guaranteed within the  
specified supply voltage and ambient temperature range TA from – 25 °C to 85 °C  
Typical values represent the median values, which are related to production  
processes. If not otherwise stated, a supply voltage of VS = 15 V is assumed.  
Semiconductor Group  
17  
Data Sheet 1998-05-06  
TDA 16888  
Undervoltage Lockout  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
Unit  
Test Condition  
Power up,  
VS,UP  
13.0  
10.5  
14.0  
11.0  
23  
14.5  
11.5  
100  
V
rising voltage  
threshold1)  
Power down,  
falling voltage  
threshold1)  
VS,DWN  
V
Power up,  
threshold current  
IS,UP  
µA  
VS = VS,UP – 0.1 V  
V
PFC CL < 0.3 V2)  
Stand-by mode  
1)  
See Figure 3  
2)  
To ensure the voltage fallback of pin PFC CL is disabled.  
Internal Voltage Reference  
Parameter  
Symbol  
Limit Values  
Unit  
Test Condition  
min. typ.  
max.  
Trimmed reference  
voltage  
VREF  
4.9  
5.0  
5.1  
V
Measured at  
pin PFC VC  
Line regulation  
VREF  
40  
mV  
VS = 3 V  
Semiconductor Group  
18  
Data Sheet 1998-05-06  
TDA 16888  
External Voltage Reference  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
Unit  
Test Condition  
Buffered output voltage VVREF  
7.2  
7.5  
7.8  
50  
V
– 3 mA IVREF 0  
VS = 3 V  
Line regulation  
Load regulation  
VVREF  
VVREF  
IVREF  
mV  
mV  
mA  
0
40  
– 6  
100  
– 4  
IVREF = 2 mA  
Maximum output  
current1)  
– 10  
V
VREF = 6.5 V  
Short circuit current1)  
IVREF  
– 2  
6.6  
mA  
V
V
VREF = 0 V  
Shutdown hysteresis,  
rising voltage threshold  
VVREF  
Shutdown hysteresis,  
falling voltage threshold  
VVREF  
6.2  
V
Shutdown delay  
td,VREF  
500  
ns  
V
V
V
VREF = 5 V2)3)  
PFC OUT = 3 V2)3)  
PWM OUT = 3 V2)3)  
1)  
See Figure 4  
2)  
Design characteristics (not meant for production testing)  
Transient reference value  
3)  
Oscillator  
Parameter  
Symbol  
Limit Values  
Unit Test Condition  
min. typ.  
max.  
57  
PFC/PWM frequency1)  
PFC/PWM frequency1)  
fOUT50  
fOUT100  
fOUT  
43  
87  
50  
100  
kHz  
kHz  
%
R
R
ROSC = 110 kΩ  
ROSC = 51 kΩ  
113  
1
PFC/PWM frequency,  
line regulation  
VS = 3 V  
R
V
V
ROSC = 51 kΩ  
Maximum ramp voltage VPFC RMP 5.0  
Minimum ramp voltage VPFC RMP 0.8  
5.4  
1.1  
5.6  
1.4  
0.4  
V
V
V
SYNC, low level voltage VSYNC  
SYNC, high level voltage VSYNC  
3.5  
VVREF  
20  
V
SYNC, input current  
ISYNC  
µA  
µA  
SYNC < 0.4 V  
SYNC = 3.5 V  
150  
1)  
See Figure 5  
Semiconductor Group  
19  
Data Sheet 1998-05-06  
TDA 16888  
PFC Section  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
98  
Unit Test Condition  
Max duty cycle1)  
Don,PFC 91  
94  
%
V
V
R
PFC OUT = 2 V3)  
ROSC = 51 kΩ  
CL = 4.7 nF  
Multiplier throttling  
(OTA2), threshold  
voltage2)  
VPFC VS 5.2  
5.5  
5.8  
0.9 IPFC CS  
IPFC IAC = 100 µA  
V
PFC VC = 6 V  
OTA1 disabled  
Overvoltage protection  
(C6), rising voltage  
threshold  
VPFC VS 5.8  
6
6.2  
V
Overvoltage protection  
(C6), falling voltage  
threshold  
VPFC VS 5.3  
5.5  
5.7  
V
Overvoltage protection  
(C6), turn-off delay  
td,OV  
VPFC VS 0.93  
IPFC VS 0.2  
VPFC CL 0.93  
IPFC CL  
2
1
µs  
V
V
V
PFC VS = 6.5 V3)4)  
PFC OUT = 3 V3)4)  
Broken wire detection  
(C2), threshold voltage  
1.07  
V
Voltage sense, input  
current  
0.45 0.7  
µA  
V
PFC VS = 1 V  
Current limitation (C3),  
threshold voltage  
1
1.07  
10  
Current limitation (C3),  
input current  
1
µA  
V
PFC CL = 1 V  
Current limitation (C3,  
D4), clamping voltage  
VPFC CL – 0.9 –  
30  
– 0.1 V  
150 ns  
IPFC CL = – 500 µA  
Current limitation (C3),  
turn-off delay  
td,CL  
V
V
PFC CL = 0.75 V3)  
PFC OUT = 3 V3)  
CL = 4.7 nF  
1)  
See Figure 6  
2)  
See Figure 9  
3)  
Transient reference value  
4)  
Design characteristics (not meant for production testing)  
Semiconductor Group  
20  
Data Sheet 1998-05-06  
TDA 16888  
Multiplier  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
Unit  
Test Condition  
Input current  
IPFC IAC  
VPFC VC  
VPFC VC  
0
0
1
mA  
V
Input voltage  
6.7  
1)2)  
Exponential function,  
threshold voltage  
1.1  
V
Maximum output current IPFC CS  
– 320 – 420 – 550 µA  
OTA1 disabled  
Output current3)  
IPFC CS  
– 100 – 500 nA  
I
V
PFC IAC = 0 A  
PFC VC = 2 V  
OTA1 disabled  
PFC IAC = 25 µA  
PFC VC = 2 V  
OTA1 disabled  
PFC IAC = 25 µA  
PFC VC = 4 V  
OTA1 disabled  
PFC IAC = 100 µA  
PFC VC = 4 V  
OTA1 disabled  
PFC IAC = 400 µA  
PFC VC = 4 V  
OTA1 disabled  
PFC IAC = 100 µA  
PFC VC = 6 V  
OTA1 disabled  
– 1.2  
– 10  
– 40  
µA  
µA  
µA  
µA  
µA  
I
V
I
V
I
V
– 150 –  
– 170 –  
I
V
I
V
1)  
Design characteristics (not meant for production testing)  
2)  
For input voltages below this threshold the multiplier output current remains constant. For input voltages above  
this threshold the output rises exponentially (see Figure 8).  
3)  
See Figure 7  
Semiconductor Group  
21  
Data Sheet 1998-05-06  
TDA 16888  
Operational Transconductance Amplifier (OTA1)  
Parameter Symbol Limit Values  
min. typ. max.  
Unit  
Test Condition  
Auxiliary power supply, VAUX VS  
4.8  
5.0  
5.2  
V
I
PFC CS = – 1 µA  
threshold voltage1)  
Multiplier disabled  
Input current  
IAUX VS  
15  
µA  
µA  
V
AUX VS > 5.2 V  
AUX VS < 4.8 V  
– 20  
V
Output current  
IPFC CS  
0
µA  
µA  
V
V
AUX VS > 5.2 V1)  
AUX VS < 4.8 V  
– 30  
1)  
For input voltages below this threshold the output current is linearly increasing until at ca. 4.8 V the maximum  
output current is reached.  
Operational Transconductance Amplifier (OTA3)  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
Unit  
Test Condition  
Offset compensation,  
threshold voltage  
VPFC VC 1.1  
1.2  
V
1)  
Input current  
IPFC VC  
IGND S  
– 1  
µA  
µA  
µA  
Output current  
0
V
PFC VC > 1.2 V  
PFC VC < 1.1 V  
– 10  
V
1)  
Design characteristics (not meant for production testing)  
Semiconductor Group  
22  
Data Sheet 1998-05-06  
TDA 16888  
Voltage Amplifier (OP1)  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
Unit Test Condition  
1)  
Offset voltage  
Input current  
VOff  
– 4  
– 1  
4
mV  
µA  
dB  
V
IPFC FB  
APFC VC  
VPFC FB  
1
V
2)  
PFC FB = 4 V  
Open loop gain  
Input voltage range  
85  
0
6
Voltage sense,  
threshold voltage  
VPFC FB 4.9  
VPFC VC 6.3  
VPFC VC 0.5  
5
5.1  
V
Output, maximum  
voltage  
VVREF  
1.1  
V
I
PFC VC = – 500 µA  
PFC VC = 500 µA  
Output, minimum  
voltage  
V
I
Output, short circuit  
source current  
IPFC VC  
– 10  
10  
mA  
mA  
V
V
PFC VC = 0 V  
PFC FB = 4.9 V  
Output, short circuit sink IPFC VC  
V
PFC VC = 6.4 V  
PFC FB = 5.1 V  
current  
V
1)  
Guaranteed by wafer test  
2)  
Design characteristics (not meant for production testing)  
Semiconductor Group  
23  
Data Sheet 1998-05-06  
TDA 16888  
Current Amplifier (OP2)  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
– 5 – 1  
– 500 –  
Unit Test Condition  
Offset voltage  
VOff  
3
mV  
nA  
Input current  
IPFC CS  
IGND S  
500  
Open loop gain  
APFC CC  
110  
dB  
MHz  
°
1)  
Gain bandwidth product fT  
Phase margin  
2.5  
60  
1)  
1)  
ϕ
Common mode voltage VCMVR  
– 0.2 –  
0.5  
V
range  
Clamped input voltage, VPFC CS 0.4  
1.0  
V
I
I
PFC CS = 500 µA  
GND S = 500 µA  
upper threshold  
VGND S  
(D2, D3)  
Multiplier, OTA1  
and OTA3 disabled  
Clamped input voltage, VPFC CS – 0.9 –  
– 0.1 V  
IPFC CS = – 500 µA  
lower threshold (D1)  
Multiplier and OTA1  
disabled  
Output, maximum  
voltage  
VPFC CC 6.3  
VPFC CC 0.5  
VVREF  
1.1  
V
I
PFC CC = – 500 µA  
PFC CC = 500 µA  
Output, minimum  
voltage  
V
I
Output, short circuit  
source current  
IPFC CC  
– 10  
mA  
V
V
V
PFC CC = 0 V  
PFC CS = 0 V  
GND S = 0.5 V  
Output, short circuit sink IPFC CC  
current  
10  
mA  
V
V
V
PFC CC = 6.5 V  
PFC CS = 0.5 V  
GND S = 0 V  
1)  
Design characteristics (not meant for production testing)  
Semiconductor Group  
24  
Data Sheet 1998-05-06  
TDA 16888  
PWM Section  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
4.2  
Unit Test Condition  
Undervoltage protection (C4), VPFC VS 3.8  
threshold voltage  
4.0  
0.45  
0.4  
30  
V
V
V
Bias control (C5),  
rising voltage threshold  
VBC,Th  
VBC,Th  
II1  
Bias control (C5),  
falling voltage threshold  
Softstart (I1),  
20  
40  
µA –  
charging current  
Softstart, maximum voltage VPWM SS  
6.7  
V
V
Input voltage  
VPWM IN 0.4  
7.4  
150  
PWM IN – GND resistance  
Ramp (OP3), voltage gain  
R3  
75  
100  
5
k–  
AOP3  
VRMP  
V/V –  
Ramp (C10), pulse start  
threshold voltage  
0.36 0.4  
0.5  
V
Ramp, maximum voltage  
VRMP  
VV1  
6.5  
1.5  
10  
V
V
Ramp (V1), voltage offset  
Ramp (R1),  
ZRMP  
k–  
output impedance  
Maximum duty cycle  
Don,PWM 41  
50  
%
V
R
PWM OUT = 2 V1)  
ROSC = 51 kΩ  
CL = 4.7 nF  
Current sense (C9),  
voltage threshold  
VCS,Th 0.9  
td,CS 30  
1.0  
1.1  
V
Current sense (C9),  
overload turn-off delay  
250  
ns  
V
V
PWM CS = 1.25 V1)  
PWM OUT = 3 V1)  
CL = 4.7 nF  
1)  
Transient reference value  
Semiconductor Group  
25  
Data Sheet 1998-05-06  
TDA 16888  
Gate Drive (PWM and PFC Section)  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
Unit Test Condition  
Output, minimum  
voltage  
VOUT  
1.2  
V
V
VS = 5 V  
OUT = 5 mA  
VS = 5 V  
I
1.5  
I
I
I
I
OUT = 20 mA  
0.8  
1.6  
V
V
V
V
OUT = 0 A  
2.0  
OUT = 50 mA  
OUT = – 50 mA  
– 0.2 0.2  
10 11  
Output, maximum  
voltage  
VOUT  
12  
VS = 16 V  
tH = 10 µs  
CL = 4.7 nF  
10.0 10.5  
V
V
VS = 12 V  
tH = 10 µs  
CL = 4.7 nF  
8.8  
VS = VS,DWN + 0.2 V  
tH = 10 µs  
CL = 4.7 nF  
Rise time1)  
Fall time  
tr  
150  
100  
30  
40  
ns  
ns  
ns  
ns  
A
V
OUT = 2 V … 8 V2)  
CL = 4.7 nF  
OUT = 3 V … 6 V2)  
CL = 4.7 nF  
OUT = 9 V … 3 V2)  
CL = 4.7 nF  
OUT = 9 V … 2 V2)  
V
tf  
V
V
CL = 4.7 nF  
CL = 4.7 nF4)  
Output current, rising  
edge3)  
IOUT  
– 1  
Output current, falling IOUT  
1.5  
A
CL = 4.7 nF4)  
edge3)  
1)  
See Figure 13  
2)  
Transient reference value  
3)  
The gate driver’s output performance is characterized in Figure 14, Figure 15, Figure 16 and Figure 17.  
4)  
Design characteristics (not meant for production testing)  
Semiconductor Group  
26  
Data Sheet 1998-05-06  
TDA 16888  
Note: If not otherwise stated the figures shown in this section represent typical  
performance characteristics.  
AED02462  
Ι VCC  
Ι S  
Ι S, UP  
VS, DWN  
VS, UP  
VZ3  
VVCC  
Figure 3  
Undervoltage Lockout Hysteresis and Zener Diode Overvoltage  
Protection  
AED02463  
-8  
mA  
-7  
Ι VREF  
-6  
-5  
-4  
-3  
-2  
-1  
0
0
1
2
3
4
5
6
7
V
8
VVREF  
Figure 4  
Foldback Characteristic of Pin 2 (VREF)  
Semiconductor Group  
27  
Data Sheet 1998-05-06  
TDA 16888  
AED02464  
400  
kHz  
fOUT  
100  
10  
10  
100  
500  
k  
ROSC  
Figure 5  
PFC/PWM Frequency  
AED02465  
100  
%
Don, PFC, max  
95  
90  
85  
80  
0
100  
200  
300  
k400  
ROSC  
Figure 6  
Maximum PFC Duty Cycle  
Semiconductor Group  
28  
Data Sheet 1998-05-06  
TDA 16888  
AED02466  
500  
µ
A
VPFC VC = 7 V  
Ι PFC CCS  
400  
300  
200  
100  
0
6 V  
5 V  
4 V  
3 V  
2 V  
0
0.2  
0.4  
0.6  
0.8  
mA  
1
Ι PFC IAC  
Figure 7  
Multiplier Linearity  
AED02356  
500  
µ
A
Ι PFC CCS  
Ι PFC IAC = 800  
µ
µ
µ
µ
µ
µ
A
400  
300  
200  
100  
0
400  
200  
100  
50  
A
A
A
A
A
25  
0
1
2
3
4
5
6
V
7
VPFC VC  
Figure 8  
Multiplier Dynamic  
Semiconductor Group  
29  
Data Sheet 1998-05-06  
TDA 16888  
AED02467  
500  
µ
A
Ι PFC IAC > 300  
µ
A
VPFC VC = 6 V  
Ι PFC CCS  
400  
300  
200  
250  
200  
µ
µ
A
A
150  
100  
µ
µ
A
A
50  
µ
A
100  
0
5.0  
5.25  
5.5  
5.75  
V 6.0  
VPFC VS  
Figure 9  
Multiplier Throttling by OTA2  
AED02468  
100  
dB  
APFC VC  
0
deg  
φ
80  
60  
40  
-30  
-60  
-90  
φ
APFC VC  
20  
0
-120  
-150  
10-2  
10-1  
100  
101  
102  
103  
104  
105  
106 Hz 107  
Frequency  
Figure 10  
Open Loop Gain and Phase Characteristic of Voltage Amplifier OP1  
Semiconductor Group  
30  
Data Sheet 1998-05-06  
TDA 16888  
AED02469  
120  
dB  
0
deg  
APFC CC  
φ
100  
-30  
φ
APFC CC  
80  
-60  
60  
-90  
40  
-120  
20  
0
-150  
-180  
10-2  
10-1  
100  
101  
102  
103  
104  
105  
106 Hz 107  
Frequency  
Figure 11  
Open Loop Gain and Phase Characteristic of Current Amplifier OP2  
AED02470  
V1  
VPWM CS  
V1 /2  
0
4V1  
VPWM RMP  
VPWMCS = 0  
3V1  
2V1  
V1  
0
0
T/2  
T
Time  
Figure 12  
PWM Ramp Composition Scheme  
Semiconductor Group  
31  
Data Sheet 1998-05-06  
TDA 16888  
AED02471  
12  
V
VPFC OUT  
10  
8
6
4
2
0
0
0.1  
0.2  
0.3  
µs 0.4  
Time  
Figure 13  
Rising Edge of Driver Output  
AED02542  
150  
R L = 0  
R L = 1  
R L = 2  
R L = 5  
mW  
PD  
R L = 10  
100  
50  
0
f OUT = 15 kHz  
PD0 = 0.194 W  
0
10  
20  
30  
40  
nF  
50  
C L  
Figure 14  
Power Dissipation of Single Gate Driver at fOUT = 15 kHz  
Semiconductor Group  
32  
Data Sheet 1998-05-06  
TDA 16888  
AED02543  
500  
mW  
R L = 0  
R L = 1  
R L = 2  
R L = 5  
PD  
400  
300  
200  
100  
0
R L = 10  
f OUT = 50 kHz  
PD0 = 0.197 W  
0
10  
20  
30  
40  
nF  
50  
C L  
Figure 15  
Power Dissipation of Single Gate Driver at fOUT = 50 kHz  
AED02544  
1
R L = 0  
R L = 1  
R L = 2  
R L = 5  
mW  
PD  
0.8  
R L = 10  
0.6  
0.4  
0.2  
0
f OUT = 100 kHz  
PD0 = 0.201 W  
0
10  
20  
30  
40  
nF  
50  
C L  
Figure 16  
Power Dissipation of Single Gate Driver at fOUT = 100 kHz  
Semiconductor Group  
33  
Data Sheet 1998-05-06  
TDA 16888  
AED02545  
1.5  
R L = 0  
R L = 1  
R L = 2  
R L = 5  
mW  
PD  
R L = 10  
1.0  
0.5  
0
f OUT = 200 kHz  
PD0 = 0.212 W  
0
10  
20  
30  
40  
nF  
50  
C L  
Figure 17  
Power Dissipation of Single Gate Driver at fOUT = 200 kHz  
Semiconductor Group  
34  
Data Sheet 1998-05-06  
TDA 16888  
VOSC  
CLK OSC  
CLK OUT  
VPFC RMP  
VPFC CC  
VPFC OUT  
VPWM RMP  
VPWM OUT  
t on, max  
VPWM IN  
VBC, Th  
t on, max  
Time  
AET02546  
Figure 18  
Timing Diagram without Synchronization  
Semiconductor Group  
35  
Data Sheet 1998-05-06  
TDA 16888  
VOSC  
VSYNC  
CLK OSC  
CLK OUT  
VPFC RMP  
VPFC CC  
VPFC OUT  
VPWM RMP  
VPWM OUT  
t on, max  
VPWM IN  
VBC, Th  
t on, max  
Time  
AET02547  
Figure 19  
Timing Diagram with Synchronization (fSYNC > fOSC)  
Semiconductor Group  
36  
Data Sheet 1998-05-06  
TDA 16888  
VOSC  
VSYNC  
CLK OSC  
CLK OUT  
VPFC RMP  
VPFC CC  
VPFC OUT  
VPWM RMP  
VPWM OUT  
t on, max  
VPWM IN  
VBC, Th  
t on, max  
Time  
AET02548  
Figure 20  
Timing Diagram with Synchronization (fSYNC < fOSC)  
Semiconductor Group  
37  
Data Sheet 1998-05-06  
TDA 16888  
5
Package Outlines  
P-DIP-20-5  
(Plastic Dual In-line Package)  
Sorts of Packing  
Package outlines for tubes, trays etc. are contained in our  
Data Book “Package Information”.  
Dimensions in mm  
Semiconductor Group  
38  
Data Sheet 1998-05-06  
TDA 16888  
P-DSO-20-1  
(Plastic Dual Small Outline)  
0.35 x 45˚  
1)  
7.6 -0.2  
+0.09  
0.23  
8˚ max  
0.4 +0.8  
10.3 ±0.3  
1.27  
0.35 +0.152)  
0.1  
0.2 24x  
11  
20  
1
GPS05094  
10  
1)  
12.8-0.2  
Index Marking  
1) Does not include plastic or metal protrusions of 0.15 max per side  
2) Does not include dambar protrusion of 0.05 max per side  
Sorts of Packing  
Package outlines for tubes, trays etc. are contained in our  
Data Book “Package Information”.  
Dimensions in mm  
SMD = Surface Mounted Device  
Semiconductor Group  
39  
Data Sheet 1998-05-06  

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