Q67040-S4499 [INFINEON]

High Speed IGBT in NPT-technology;


型号：	Q67040-S4499
厂家：	Infineon
描述：	High Speed IGBT in NPT-technology 双极性晶体管
文件：	总11页 (文件大小：426K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SGP20N60HS

SGW20N60HS

High Speed IGBT in NPT-technology

• 30% lower E_offcompared to previous generation

• Short circuit withstand time – 10 µs

• Designed for operation above 30 kHz

• NPT-Technology for 600V applications offers:

- parallel switching capability

P-TO-220-3-1

(TO-220AB)

P-TO-247-3-1

(TO-247AC)

- moderate E_offincrease with temperature

- very tight parameter distribution

•

High ruggedness, temperature stable behaviour

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

E_off

T_j

Package

TO220AB

TO-247AC

Ordering Code

Q67040-S4498

Q67040-S4499

SGP20N60HS

600V

240µJ

150°C

SGW20N60HS

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

600

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_{Cpul s}

V_CE≤ 600V, T_j≤ 150°C

Avalanche energy single pulse

I_C= 20A, V_CC=50V, R_GE=25Ω

start T_J=25°C

E_AS

115

Gate-emitter voltage static

V_{G E}

±20

±30

transient (t_p<1µs, D<0.05)

Short circuit withstand time¹⁾

V_GE= 15V, V_CC≤ 600V, T_j≤ 150°C

Power dissipation

t_SC

µs

P_{t ot}

178

T_C= 25°C

Operating junction and storage temperature

T_j,

-55...+150

°C

T_stg

Time limited operating junction temperature for t < 150h

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

T_j(tl)

175

260

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev.2 Aug-02

Power Semiconductors

SGP20N60HS

SGW20N60HS

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

R_{t hJC}

R_{t hJA}

0.7

K/W

Thermal resistance,

TO-220AB

TO-247AC

junction – ambient

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR)CES}

600

V_{G E}=0V, I_C=500µA

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=20A

T_j=25°C

2.8

3.5

3.15

4.00

T_j=150°C

Gate-emitter threshold voltage

Zero gate voltage collector current

V_{G E(t h)}

I_CES

I_C=500µA,V_CE=V_GE

V_CE=600V,V_GE=0V

T_j=25°C

µA

2500

T_j=150°C

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CE=0V,V_{G E}=20V

V_CE=20V, I_C=20A

100

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

V_CE=25V,

V_{G E}=0V,

f=1MHz

V_CC=480V, I_C=20A

V_{G E}=15V

1100

105

C_oss

C_rss

Q_Gate

100

Internal emitter inductance

L_E

TO-247AC

measured 5mm (0.197 in.) from case

Short circuit collector current¹⁾

I_{C( SC)}

170

V_{G E}=15V,t_SC≤10µs

V_CC≤ 600V,

T_j≤ 150°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev.2 Aug-02

Power Semiconductors

SGP20N60HS

SGW20N60HS

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

Unit

Parameter

Symbol

Conditions

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_d(on)

t_r

t_{d( off)}

t_f

207

0.39

0.30

0.69

T_j=25°C,

V_CC=400V,I_C=20A,

V_{G E}=0/15V,

R_G=16Ω

L_σ=60nH,

C_σ=40pF

E_on

E_off

E_{t s}

Energy losses include

“tail” and diode

reverse recovery.

Switching Characteristic, Inductive Load, at T_j=150 °C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_d(on)

t_r

t_{d( off)}

t_f

8.5

T_j=150°C

V_CC=400V,I_C=20A,

V_{G E}=0/15V,

R_G= 2.2Ω

L_σ=60nH,

C_σ=40pF

E_on

E_off

E_{t s}

t_d(on)

t_r

0.46

0.24

0.7

222

0.6

0.36

0.96

Energy losses include

“tail” and diode

reverse recovery.

T_j=150°C

V_CC=400V,I_C=20A,

V_{G E}=0/15V,

R_G= 16Ω

t_{d( off)}

t_f

L_σ=60nH,

C_σ=40pF

E_on

E_off

E_{t s}

Energy losses include

“tail” and diode

reverse recovery.

¹⁾Leakage inductance L_σand Stray capacity C_σdue to test circuit in Figure E.

Rev.2 Aug-02

Power Semiconductors

SGP20N60HS

SGW20N60HS

100A

10A

80A

70A

60A

50A

40A

30A

20A

10A

t_P=4µs

T_C=80°C

15µs

50µs

T_C=110°C

200µs

1ms

I_c

0,1A

10Hz

100Hz

1kHz

10kHz

100kHz

10V

100V

1000V

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, T_C= 25°C,

(T_j≤ 150°C, D = 0.5, V_CE= 400V,

T_j≤150°C;V_GE=15V)

V_GE= 0/+15V, R_G= 16Ω)

180W

160W

140W

120W

100W

80W

30A

20A

10A

60W

40W

20W

25°C

75°C

125°C

25°C

50°C

75°C

100°C

125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

T_C, CASE TEMPERATURE

Figure 4. Collector current as a function of

case temperature

(T_j≤ 150°C)

(V_GE≤ 15V, T_j≤ 150°C)

Rev.2 Aug-02

Power Semiconductors

SGP20N60HS

SGW20N60HS

V_GE=20V

15V

13V

11V

V_GE=20V

15V

13V

11V

50A

40A

30A

20A

10A

50A

40A

30A

20A

10A

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 150°C)

T_J=-55°C

5,5V

5,0V

25°C

150°C

I_C=40A

4,5V

4,0V

3,5V

3,0V

2,5V

2,0V

1,5V

1,0V

40A

I_C=20A

I_C=10A

20A

-50°C

0°C

50°C

100°C

150°C

V_GE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

T_J, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

(V_CE=10V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

Rev.2 Aug-02

Power Semiconductors

SGP20N60HS

SGW20N60HS

t_d(off)

100ns

10ns

1ns

100 ns

10 ns

1 ns

t_f

t_d(off)

t_f

t_d(on)

t_r

t_d(on)

t_r

10A

20A

30A

0Ω

10Ω

20Ω

30Ω

40Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=150°C,

V_CE=400V, V_GE=0/15V, R_G=16Ω,

Dynamic test circuit in Figure E)

V_CE=400V, V_GE=0/15V, I_C=20A,

Dynamic test circuit in Figure E)

t_d(off)

5,0V

4,5V

4,0V

3,5V

3,0V

2,5V

2,0V

1,5V

max.

typ.

100ns

t_d(on)

t_r

min.

t_f

10ns

-50°C

0°C

50°C

100°C

150°C

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 0.5mA)

function of junction temperature

(inductive load, V_CE=400V,

V_GE=0/15V, I_C=20A, R_G=16Ω,

Dynamic test circuit in Figure E)

Rev.2 Aug-02

Power Semiconductors

SGP20N60HS

SGW20N60HS

*) E_oninclude losses

*) Eon include losses

due to diode recovery

E_ts*

due to diode recovery

2,0mJ

1,0mJ

0,0mJ

E_on

1,0 mJ

0,5 mJ

0,0 mJ

E_on

E_off

10A

20A

30A

40A

0Ω

10Ω

20Ω

30Ω

40Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_J=150°C,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_J=150°C,

V_CE=400V, V_GE=0/15V, R_G=16Ω,

Dynamic test circuit in Figure E)

V_CE=400V, V_GE=0/15V, I_C=20A,

Dynamic test circuit in Figure E)

*) E_oninclude losses

due to diode recovery

10⁰K/W

D=0.5

0,75mJ

0.2

0.1

10^-1K/W

E_ts*

0.05

R , ( K / W )

0.1882

τ , ( s )

0.02

0.1137

0,50mJ

10^-2K/W

10^-3K/W

10^-4K/W

0.3214

2.24*10^-2

7.86*10^-4

9.41*10^-5

E_on*

0.1512

0.01

0.0392

E_off

R₁

R₂

0,25mJ

single pulse

C₁=τ₁/R₁C₂=τ₂/R₂

0,00mJ

0°C

50°C

100°C

150°C

1µs 10µs 100µs 1ms 10ms 100ms

T_J, JUNCTION TEMPERATURE

t_P, PULSE WIDTH

Figure 15. Typical switching energy losses

as a function of junction

Figure 16. IGBT transient thermal resistance

(D = t_p/ T)

temperature

(inductive load, V_CE=400V,

VGE=0/15V, I_C=20A, R_G=16Ω,

Dynamic test circuit in Figure E)

Rev.2 Aug-02

Power Semiconductors

SGP20N60HS

SGW20N60HS

C_iss

1nF

100pF

10pF

15V

10V

120V

480V

C_oss

C_rss

10V

20V

0nC

50nC

100nC

Q_GE, GATE CHARGE

Figure 17. Typical gate charge

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(I_C=20 A)

(V_GE=0V, f = 1 MHz)

250A

200A

150A

100A

50A

15µs

10µs

5µs

0µs

10V

11V

12V

13V

14V

10V

12V

14V

16V

18V

V_GE, GATE-EMITETR VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE=600V, start at T_J=25°C)

(V_CE≤ 600V, T_j≤ 150°C)

Rev.2 Aug-02

Power Semiconductors

SGP20N60HS

SGW20N60HS

dimensions

TO-220AB

symbol

[mm]

[inch]

min

9.70

14.88

0.65

3.55

2.60

6.00

13.00

4.35

0.38

0.95

max

10.30

15.95

0.86

3.89

3.00

6.80

14.00

4.75

0.65

1.32

min

max

0.3819

0.5858

0.0256

0.1398

0.1024

0.2362

0.5118

0.1713

0.0150

0.0374

0.4055

0.6280

0.0339

0.1531

0.1181

0.2677

0.5512

0.1870

0.0256

0.0520

2.54 typ.

0.1 typ.

4.30

4.50

1.40

2.72

0.1693

0.0461

0.0906

0.1772

0.0551

0.1071

1.17

2.30

dimensions

TO-247AC

symbol

[mm]

[inch]

min

4.78

2.29

1.78

1.09

1.73

2.67

max

5.28

2.51

2.29

1.32

2.06

3.18

min

max

0.1882 0.2079

0.0902 0.0988

0.0701 0.0902

0.0429 0.0520

0.0681 0.0811

0.1051 0.1252

0.0299 max

0.76 max

20.80

15.65

5.21

21.16

16.15

5.72

0.8189 0.8331

0.6161 0.6358

0.2051 0.2252

0.7799 0.8142

0.1402 0.1941

0.1421

19.81

3.560

20.68

4.930

3.61

6.12

6.22

0.2409 0.2449

Rev.2 Aug-02

Power Semiconductors

SGP20N60HS

SGW20N60HS

τ₁

r²₂

τ_n

r₁

r _n

T (t)

p(t)

r ₂

r₁

r_n

Figure D. Thermal equivalent

circuit

Figure A. Definition of switching times

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Leakage inductance L_σ=60nH

and Stray capacity C_σ=40pF.

Published by

Infineon Technologies AG,

Rev.2 Aug-02

Power Semiconductors

SGP20N60HS

SGW20N60HS

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or

systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect

human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev.2 Aug-02

Power Semiconductors

Q67040-S4499 [INFINEON]

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