Q67040-S4503 [INFINEON]
HIGH SPEED IGBT IN NPT-TECHNOLOGY; 高速IGBT在NPT技术
| 型号： | Q67040-S4503 |
| 厂家： | 
Infineon |
| 描述： | HIGH SPEED IGBT IN NPT-TECHNOLOGY |
| 文件： | 总14页 (文件大小：438K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKW30N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
C
G
E
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
P-TO-247-3-1
(TO-247AC)
- moderate Eoff increase with temperature
- very tight parameter distribution
•
•
High ruggedness, temperature stable behaviour
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
Eoff)
Tj
Package
Ordering Code
SKW30N60HS
Maximum Ratings
Parameter
600V
30
480µJ
TO-247AC
Q67040-S4503
150°C
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
VCE
IC
600
V
A
41
30
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpul s
-
112
112
VCE ≤ 600V, Tj ≤ 150°C
Diode forward current
TC = 25°C
IF
41
28
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage static
IFpul s
VG E
112
±20
±30
V
transient (tp<1µs, D<0.05)
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
tSC
10
µs
W
°C
Pt ot
250
TC = 25°C
Operating junction and storage temperature
Tj ,
-55...+150
Tstg
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj(tl)
175
260
-
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Rt hJC
Rt hJCD
Rt hJA
0.5
1.29
40
K/W
TO-247AC
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V( BR)CES
600
-
-
V
VG E=0V, IC =500µA
Collector-emitter saturation voltage
VC E( sat ) VG E = 15V, IC =30A
Tj =25°C
2.8
3.5
3.15
4.00
Tj =150°C
Diode forward voltage
VF
VG E=0V, IF =30A
Tj =25°C
1.55
1.55
2.05
2.05
-
Tj =150°C
Gate-emitter threshold voltage
Zero gate voltage collector current
VG E(t h)
ICES
3
4
5
IC =700µA,VCE=VGE
VCE=600V,VGE=0V
Tj =25°C
µA
-
-
-
-
40
3000
Tj =150°C
Gate-emitter leakage current
Transconductance
IGES
gfs
VCE=0V,VG E=20V
VCE=20V, IC =30A
-
-
-
20
100
nA
S
2
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
VCE=25V,
VG E=0V,
f=1MHz
VCC =480V, IC =30A
VG E=15V
-
-
-
-
1500
203
92
pF
Coss
Crss
QGate
141
nC
nH
A
Internal emitter inductance
LE
TO-247AC
-
-
13
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC( SC)
220
VG E=15V,tSC≤10µs
VCC ≤ 600V,
Tj ≤ 150°C
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td( off)
tf
-
-
-
-
-
-
-
20
21
250
25
0.60
0.55
1.15
ns
Tj =25°C,
VCC =400V,IC =30A,
VG E=0/15V,
RG=11Ω
2)
Lσ =60nH,
2)
Cσ =40pF
Eon
Eoff
Et s
mJ
Energy losses include
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
tS
-
-
-
-
-
-
125
20
105
0.82
17
ns
Tj =25°C,
VR =400V, IF =30A,
diF/dt=1100A/µs
tF
Diode reverse recovery charge
Qrr
µC
A
A/µs
Diode peak reverse recovery current Irrm
dirr /dt
580
Diode peak rate of fall of reverse
recovery current during tb
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance Lσ and Stray capacity Cσ due to test circuit in Figure E.
3
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td( off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16
13
122
29
0.78
0.48
1.26
20
19
274
27
0.91
0.70
1.61
ns
Tj =150°C
VCC =400V,IC =30A,
VG E=0/15V,
RG= 1.8Ω
1)
Lσ =60nH,
1)
Cσ =40pF
Eon
Eoff
Et s
td(on)
tr
mJ
ns
Energy losses include
“tail” and diode
reverse recovery.
Tj =150°C
VCC =400V,IC =30A,
VG E=0/15V,
RG= 11Ω
td( off)
tf
1)
Lσ =60nH,
1)
Cσ =40pF
Eon
Eoff
Et s
mJ
Energy losses include
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
tS
-
-
-
-
-
-
190
30
160
2.0
24
ns
Tj =150°C
VR =400V, IF =30A,
diF/dt=1250A/µs
tF
Diode reverse recovery charge
Qrr
µC
A
A/µs
Diode peak reverse recovery current Irrm
dirr /dt
480
Diode peak rate of fall of reverse
recovery current during tb
1) Leakage inductance Lσ and Stray capacity Cσ due to test circuit in Figure E.
4
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
100A
10A
1A
tP=4µs
100A
80A
60A
40A
20A
0A
15µs
TC=80°C
50µs
TC=110°C
200µs
1ms
Ic
Ic
DC
0,1A
10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 11Ω)
(D = 0, TC = 25°C, Tj ≤ 150°C;
VGE=15V)
Limited by Bond wire
40A
30A
20A
10A
0A
200W
150W
100W
50W
0W
25°C
50°C
75°C
100°C 125°C
25°C
75°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 150°C)
(VGE ≤ 15V, Tj ≤ 150°C)
5
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
VG E =20V
15V
13V
11V
9V
VGE=20V
80A
70A
60A
50A
40A
30A
20A
10A
0A
80A
70A
60A
50A
40A
30A
20A
10A
0A
15V
13V
11V
9V
7V
7V
5V
5V
0V
2V
4V
6V
0V
2V
4V
6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 25°C)
(Tj = 150°C)
5,5V
5,0V
4,5V
4,0V
3,5V
TJ=-55°C
80A
25°C
IC=60A
150°C
60A
IC=30A
IC=15A
40A
20A
0A
3,0V
2,5V
2,0V
1,5V
1,0V
0V
2V
4V
6V
8V
-50°C
0°C
50°C
100°C
150°C
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE=10V)
saturation voltage as a function of
junction temperature
(VGE = 15V)
6
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
td(off)
100ns
td(off)
100 ns
tf
tf
td(on)
tr
td(on)
tr
10ns
10 ns
0Ω
5Ω
10Ω
15Ω
20Ω
25Ω
0A
10A
20A
30A
40A
50A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=11Ω,
Dynamic test circuit in Figure E)
VCE=400V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
5,5V
5,0V
4,5V
4,0V
3,5V
3,0V
2,5V
2,0V
1,5V
1,0V
td(off)
100ns
max.
typ.
tf
tr
td(on)
min.
10ns
-50°C
0°C
50°C
100°C
150°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=400V,
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.7mA)
VGE=0/15V, IC=30A, RG=11Ω,
Dynamic test circuit in Figure E)
7
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
5,0mJ
4,0mJ
3,0mJ
2,0mJ
1,0mJ
0,0mJ
*) Eon and Ets include losses
due to diode recovery
*) Eon and Ets include losses
due to diode recovery
3,0 mJ
2,5 mJ
2,0 mJ
1,5 mJ
1,0 mJ
0,5 mJ
0,0 mJ
Eon*
Ets*
Eon*
Eoff
Eoff
0A
10A
20A
30A
40A
50A
60A
0Ω
5Ω
10Ω
15Ω
20Ω
25Ω
30Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=11Ω,
Dynamic test circuit in Figure E)
VCE=400V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
D=0.5
Ets*
0.2
10-1K/W
1,5mJ
1,0mJ
0,5mJ
0,0mJ
0.1
0.05
Eon*
0.02
10-2K/W
R , ( K / W )
0.39
τ , ( s )
0.0981
0.403
1.71*10-2
1.04*10-3
1.37*10-4
0.01
0.2972
0.1098
Eoff
10-3K/W
R1
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10-4K/W
1µs
10µs 100µs 1ms 10ms 100ms
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
tP, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction
Figure 16. IGBT transient thermal resistance
(D = tp / T)
temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=30A, RG=11Ω,
Dynamic test circuit in Figure E)
8
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
Ciss
1nF
100pF
10pF
15V
10V
5V
120V
480V
Coss
Crss
0V
0nC
50nC
100nC
150nC
0V
10V
20V
QGE, GATE CHARGE
Figure 17. Typical gate charge
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(IC=30 A)
(VGE=0V, f = 1 MHz)
300A
250A
200A
150A
100A
50A
15µs
10µs
5µs
0µs
0A
10V
12V
14V
16V
18V
10V
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
(VCE ≤ 600V, Tj ≤ 150°C)
9
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
2,8µC
2,6µC
2,4µC
2,2µC
2,0µC
1,8µC
1,6µC
1,4µC
1,2µC
1,0µC
500ns
450ns
400ns
350ns
300ns
250ns
200ns
150ns
100ns
IF=60A
IF=30A
IF=60A
IF=30A
IF=15A
IF=15A
0A/µs
250A/µs 500A/µs 750A/µs
0A/µs
250A/µs 500A/µs 750A/µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current
slope
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR=400V, TJ=150°C,
Dynamic test circuit in Figure E)
(VR=400V, TJ=150°C,
Dynamic test circuit in Figure E)
IF=60A
IF=15A
IF=30A
24A
20A
8A
-400A/µs
-300A/µs
-200A/µs
-100A/µs
-0A/µs
4A
0A
200A/µs
400A/µs
600A/µs
800A/µs
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current
slope
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, TJ=150°C,
(VR=400V, TJ=150°C,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
10
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
TJ=-55°C
IF=60A
25°C
50A
40A
30A
20A
10A
0A
150°C
2,0
1,5
1,0
0,5
0,0
IF=30A
IF=15A
-50
0
50
100
150
0,0V
0,5V
1,0V
1,5V
2,0V
VF, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
TJ, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as a
function of junction temperature
100K/W
D=0.5
0.2
0.1
10-1K/W
R , ( K /W )
τ , ( s ) =
9.02*10-2
9.42*10-3
9.93*10-4
1.19*10-4
1.92*10-5
0.05
0.358
0.367
0.329
0.216
0.024
0.02
0.01
10-2K/W
R1
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10-3K/W
1µs
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
11
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
dimensions
TO-247AC
symbol
[mm]
[inch]
min
4.78
2.29
1.78
1.09
1.73
2.67
0.76 max
20.80
15.65
5.21
max
5.28
2.51
2.29
1.32
2.06
3.18
min
max
A
B
C
D
E
F
G
H
K
L
0.1882 0.2079
0.0902 0.0988
0.0701 0.0902
0.0429 0.0520
0.0681 0.0811
0.1051 0.1252
0.0299 max
0.8189 0.8331
0.6161 0.6358
0.2051 0.2252
0.7799 0.8142
0.1402 0.1941
0.1421
21.16
16.15
5.72
M
N
P
Q
19.81
3.560
20.68
4.930
3.61
6.12
6.22
0.2409 0.2449
12
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
90% Ir r m
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ
r22
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
and Stray capacity Cσ =40pF.
Figure B. Definition of switching losses
13
Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
14
Rev. 2 Aug-02
Power Semiconductors
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