Q67040-S4649_技术文档

IKA03N120H2

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

C

•

Designed for:

- TV – Horizontal Line Deflection

•

2^ndgeneration HighSpeed-Technology

for 1200V applications offers:

- loss reduction in resonant circuits

- temperature stable behavior

- parallel switching capability

- tight parameter distribution

G

E

- Integrated anti-parallel diode

- E_offoptimized for I_C=3A

P-TO220-3-31

(FullPAK)

P-TO220-3-34

(FullPAK)

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

E_off

T_j

Marking

Package

Ordering Code

IKA03N120H2

1200V

3A

0.15mJ

K03H1202 P-TO-220-3-31 Q67040-S4649

K03H1202 P-TO-220-3-34 Q67040-S4655

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Triangular collector peak current (V_GE= 15V)

T_C= 100°C, f = 32kHz

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

V_CE

I_C

1200

V

A

8.2

9

I_Cpuls

-

V

_CE≤ 1200V, T_j≤ 150°C

Diode forward current

T_C= 25°C

T_C= 100°C

I_F

9.6

3.9

Gate-emitter voltage

Power dissipation

V_GE

P_tot

V

W

±20

29

T_C= 25°C

Operating junction and storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

T_j, T_stg

-

-40...+150

260

°C

1

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

R_thJC

R_thJCD

R_thJA

4.3

5.8

62

K/W

junction – case

Diode thermal resistance,

junction - case

Thermal resistance,

P-TO-220-3-31

P-TO-220-3-34

junction – ambient

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{(BR)C ES}

1200

-

V

_GE=0V, I_C=300µA

Collector-emitter saturation voltage

V_{C E(sa t)}V_GE= 15V, I_C=3A

T_j=25°C

-

2.2

2.5

2.8

-

T_j=150°C

V_GE= 10V, I_C=3A,

T_j=25°C

-

2.4

-

Diode forward voltage

V_F

V_GE= 0, I_F=3A

T_j=25°C

-

1.55

1.6

-

T_j=150°C

Gate-emitter threshold voltage

Zero gate voltage collector current

V_{GE(th )}

I_{C ES}

2.1

3

3.9

I_C=90µA,V_CE=V_GE

V_{C E}=1200V,V_GE=0V

µA

-

20

80

T_j=25°C

T_j=150°C

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V

_{C E}=0V,V_GE=20V

_{C E}=20V, I_C=3A

-

2

100

-

nA

S

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

C_oss

C_rss

V

_{C E}=25V,

_GE=0V,

-

205

24

7

-

pF

f=1MHz

V

Q_{Ga te}

_CC=960V, I_C=3A

_GE=15V

8.6

nC

nH

Internal emitter inductance

L_E

P-TO-220-3-1

-

7

-

measured 5mm (0.197 in.) from case

2

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

Unit

Parameter

Symbol

Conditions

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_{d (on)}

t_r

t_{d (off)}

t_f

E_on

E_{o ff}

E_ts

-

9.2

5.2

281

29

0.14

0.15

0.29

-

ns

T_j=25°C,

V

_CC=800V,I_C=3A,

_GE=0V/15V,

R_G=82Ω,

L_σ²⁾=180nH,

C_σ²⁾=40pF

mJ

Energy losses include

“tail” and diode ²⁾

reverse recovery.

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current I_rrm

Diode current slope di_F/dt

t_rr

Q_rr

-

52

0.23

9.3

-

ns

µC

A

T_j=25°C,

V_R=800V, I_F=3A,

R_G=82Ω

723

A/µs

Switching Characteristic, Inductive Load, at T_j=150 °C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_{d (on)}

t_r

t_{d (off)}

t_f

E_on

E_{o ff}

E_ts

-

9.4

6.7

340

63

0.22

0.26

0.48

-

ns

T_j=150°C

V

_CC=800V, I_C=3A,

_GE=0V/15V,

R_G=82Ω,

L_σ²⁾=180nH,

C_σ²⁾=40pF

mJ

Energy losses include

“tail” and diode ³⁾

reverse recovery.

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current I_rrm

Diode current slope di_F/dt

t_rr

Q_rr

-

112

0.52

11

-

ns

µC

A

T_j=150°C

V_R=800V, I_F=3A,

R_G=82Ω

661

A/µs

²⁾Leakage inductance L_σand stray capacity C_σdue to dynamic test circuit in figure E

²⁾Commutation diode from device IKP03N120H2

3

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

Switching Energy ZVT, Inductive Load

Value

Unit

Parameter

Symbol

Conditions

min.

typ.

max.

IGBT Characteristic

Turn-off energy

E_{o ff}

V

_CC=800V, I_C=3A,

mJ

_GE=0V/15V,

R_G=82Ω, C_r²⁾=4nF

T_j=25°C

-

0.05

0.09

-

T_j=150°C

4

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

12A

10A

8A

I_c

t_p=10µs

10A

1A

20µs

50µs

100µs

T_C=25°C

6A

1ms

T_C=100°C

4A

0,1A

0,01A

100ms

I_c

2A

DC

0A

1V

10V

100V

1000V

10Hz

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

Figure 2. Safe operating area

switching frequency

(D = 0, T_C= 25°C, T_j≤ 150°C)

(T_j≤ 150°C, D = 0.5, V_CE= 800V,

V

_GE= +15V/0V, R_G= 82Ω)

30W

20W

10W

0W

8A

6A

4A

2A

0A

25°C

50°C

75°C

100°C 125°C 150°C

25°C

50°C

75°C 100°C 125°C 150°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

Figure 4. Collector current as a function of

case temperature

(T_j≤ 150°C)

(V_GE≤ 15V, T_j≤ 150°C)

5

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

10A

8A

6A

4A

2A

0A

10A

8A

6A

4A

2A

0A

V

_GE=15V

12V

10V

8V

V

_GE=15V

12V

10V

8V

6V

0V

1V

2V

3V

4V

5V

0V

1V

2V

3V

4V

5V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

Figure 6. Typical output characteristics

(T_j= 25°C)

(T_j= 150°C)

12A

10A

3V

I_C=6A

I_C=3A

8A

2V

T_j=+150°C

I_C=1.5A

T_j=+25°C

6A

4A

2A

0A

1V

0V

3V

5V

7V

9V

-50°C

0°C

50°C

100°C

150°C

V

_GE, GATE-EMITTER VOLTAGE

T_j, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics

Figure 8. Typical collector-emitter

(V_CE= 20V)

saturation voltage as a function of junction

temperature

(V_GE= 15V)

6

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

1000ns

100ns

10ns

1000ns

100ns

10ns

t_d(off)

t_f

t_d(on)

t_r

1ns

0Ω

50Ω

100Ω

150Ω

0A

2A

4A

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_j= 150°C,

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_j= 150°C,

V

_CE= 800V, V_GE= +15V/0V, I_C= 3A,

V

_CE= 800V, V_GE= +15V/0V, R_G= 82Ω,

dynamic test circuit in Fig.E)

1000ns

5V

4V

3V

2V

1V

0V

t_d(off)

100ns

max.

t_f

typ.

t_d(on)

10ns

min.

t_r

1ns

25°C

50°C

75°C 100°C 125°C 150°C

-50°C

0°C

50°C

100°C

150°C

T_j, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V_CE= 800V,

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(I_C= 0.09mA)

V

_GE= +15V/0V, I_C= 3A, R_G= 82Ω,

dynamic test circuit in Fig.E)

7

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

1.0mJ

0.5mJ

0.0mJ

¹) E_onand E_tsinclude losses

1

E_ts

0.7mJ

0.6mJ

0.5mJ

0.4mJ

0.3mJ

0.2mJ

due to diode recovery.

1

E_ts

due to diode recovery.

E_off

1

E_on

E_off

1

E_on

0Ω

50Ω

100Ω 150Ω 200Ω 250Ω

0A

2A

4A

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_j= 150°C,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_j= 150°C,

V

_CE= 800V, V_GE= +15V/0V, I_C= 3A,

V

_CE= 800V, V_GE= +15V/0V, R_G= 82Ω,

dynamic test circuit in Fig.E )

0.5mJ

¹) E_onand E_tsinclude losses

due to diode recovery.

1

I_C=3A, T_J=150°C

E_ts

0.16mJ

0.12mJ

0.08mJ

0.04mJ

0.00mJ

0.4mJ

0.3mJ

0.2mJ

0.1mJ

I_C=3A, T_J=25°C

E_off

I_C=1A, T_J=150°C

1

E_on

I_C=1A, T_J=25°C

0V/us

1000V/us

2000V/us

3000V/us

25°C

80°C

125°C

150°C

dv/dt, VOLTAGE SLOPE

T_j, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, V_CE= 800V,

Figure 16. Typical turn off switching energy

loss for soft switching

(dynamic test circuit in Fig. E)

V

_GE= +15V/0V, I_C= 3A, R_G= 82Ω,

dynamic test circuit in Fig.E )

8

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

1nF

100pF

10pF

20V

15V

10V

5V

C_iss

U_CE=240V

U_CE=960V

C_oss

C_rss

0V

0nC

10nC

20nC

30nC

0V

10V

20V

30V

V_CE, COLLECTOR-EMITTER VOLTAGE

Q_GE, GATE CHARGE

Figure 17. Typical capacitance as a

function of collector-emitter voltage

Figure 18. Typical gate charge

(I_C= 3A)

(V_GE= 0V, f = 1MHz)

10¹K/W

D=0.5

D=0.5 0.1

0.2

10⁰K/W

10^-1K/W

10^-2K/W

0.1

R , ( K / W )

τ , ( s )

4.279

0.9734

1.452

R , ( K / W )

τ , ( s )

5,2404

1.094

4.899*10^-2

3.081*10^-3

4.341*10^-4

0.833*10^-5

1,4285

1,8838

0,4057

0,4234

0,3241

0,1021

0,1340

0.6213

0.7174

1,7688

0,07592

0.7037

0.05

0.02

0.01

10^-1K/W

10^-2K/W

0,005018

0,000595

0,000126

0,000018

0.1445

0.02

0.01

single pulse

R₁

R₂

C₁=τ ₁/R₁C₂=τ ₂/R₂

R₁

R₂

single pulse

C₁=τ₁/R₁C₂=τ₂/R₂

10µs 100µs 1ms 10ms100ms 1s

10s

1µs 10µs100µs 1ms 10ms100ms 1s 10s

t_P, PULSE WIDTH

Figure 19. Typical IGBT transient thermal

impedance as a function of pulse width

(D=t_P/T)

Figure 22. Typical Diode transient

thermal impedance as a function of

pulse width

(D=t_P/T)

9

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

0.6uC

0.5uC

0.4uC

0.3uC

0.2uC

180ns

160ns

140ns

120ns

100ns

80ns

T_J=150°C

60ns

T_J=25°C

40ns

0Ohm

100Ohm

200Ohm

300Ohm

0Ohm

100Ohm

200Ohm

300Ohm

R_G, GATE RESISTANCE

Figure 23. Typical reverse recovery time

as a function of diode current slope

V_R=800V, I_F=3A,

Figure 24. Typical reverse recovery

charge as a function of diode current

slope

Dynamic test circuit in Figure E)

(V_R=800V, I_F=3A,

Dynamic test circuit in Figure E)

16A

14A

12A

10A

8A

-600A/us

T_J=150°C

T_J=25°C

-800A/us

-1000A/us

-1200A/us

-1400A/us

-1600A/us

-1800A/us

T_J=150°C

T_J=25°C

0Ohm

100Ohm

200Ohm

300Ohm

0Ohm

100Ohm

200Ohm

300Ohm

R_G, GATE RESISTANCE

Figure 25. Typical reverse recovery

current as a function of diode current

slope

Figure 26. Typical diode peak rate of fall

of reverse recovery current as a

function of diode current slope

(V_R=800V, I_F=3A,

Dynamic test circuit in Figure E)

10

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

3.0V

2.5V

2.0V

1.5V

1.0V

I_F=4A

4A

2A

0A

T_J=150°C

I_F=2A

I_F=1A

T_J=25°C

-50°C

0°C

50°C

100°C

150°C

0V

1V

2V

3V

V_F, FORWARD VOLTAGE

T_J, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current

Figure 28. Typical diode forward

voltage as a function of junction

temperature

as a function of forward voltage

11

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

TO-220-3-31 (FullPAK)

dimensions

symbol

[mm]

[inch]

min

10.37

15.86

0.65

max

10.63

16.12

0.78

min

max

A

B

C

D

E

F

0.4084

0.6245

0.0256

0.4184

0.6345

0.0306

2.95 typ.

3.15

0.1160 typ.

3.25

6.56

13.73

3.43

0.63

1.36

0.124

0.2384

0.5304

0.125

0.128

0.2584

0.5404

0.135

6.05

13.47

3.18

0.45

1.23

G

H

K

L

0.0177

0.0484

0.0247

0.0534

M

N

P

T

2.54 typ.

0.100 typ.

4.57

2.57

2.51

4.83

2.83

2.62

0.1800

0.1013

0.0990

0.1900

0.1113

0.1030

TO-220-3-34 (FullPAK)

dimensions

symbol

[mm]

[inch]

min

10.37

15.86

0.65

max

10.63

16.12

0.78

min

max

A

B

C

D

E

F

0.4084

0.6245

0.0256

0.4184

0.6345

0.0306

2.95 typ.

3.15

0.1160 typ.

3.25

6.56

8.79

3.43

0.63

1.36

0.124

0.128

0.2584

0.346

6.05

8.28

3.18

0.45

1.23

0.2384

0.326

G

H

K

L

0.125

0.135

0.0177

0.0484

0.0247

0.0534

M

N

P

T

2.54 typ.

0.100 typ.

4.57

2.57

2.51

4.83

2.83

2.62

0.1800

0.1013

0.0990

0.1900

0.1113

0.1030

U

5.00 typ.

0.197 typ.

1: Gate

2: Collector

3: Emitter

12

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

i,v

t_{r r}=t_S+t_F

di_F/dt

Q_{r r}=Q_S+Q_F

t_{r r}

I_F

t_S

t_F

t

Q_S

10% I_{r r m}

Q_F

I_{r r m}

di_{r r}/dt

V_R

90% I_{r r m}

Figure C. Definition of diodes

switching characteristics

τ₁

τ₂

r ₂

τ_n

r₁

r _n

T (t)

j

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

T

C

Figure D. Thermal equivalent

circuit

½ L_σ

öö

DUT

(Diode)

L

C_σ

C_r

V_DC

R_G

DUT

(IGBT)

½ L_σ

Figure E. Dynamic test circuit

Leakage inductance L_σ= 180nH,

Stray capacitor C_σ= 40pF,

Relief capacitor C_r= 4nF (only for

ZVT switching)

Figure B. Definition of switching losses

13

Mar-04, Rev. 2

Power Semiconductors

IKA03N120H2

Published by

Infineon Technologies AG i Gr.,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or

systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect

human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

14

Mar-04, Rev. 2

Power Semiconductors


型号：	Q67040-S4649
厂家：	Infineon
描述：	HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode 高速2 -技术具有柔软，快速恢复反并联EMCON何二极管二极管
文件：	总14页 (文件大小：336K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Q67040-S4649 [INFINEON]

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