Q67041-A2825-A001 [INFINEON]
Fast switching diode chip in EMCON-Technology; 在EMCON -技术快速开关二极管芯片
| 型号： | Q67041-A2825-A001 |
| 厂家： | 
Infineon |
| 描述： | Fast switching diode chip in EMCON-Technology |
| 文件： | 总4页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
SIDC23D60E6
Fast switching diode chip in EMCON-Technology
A
FEATURES:
This chip is used for:
EUPEC power modules and
discrete devices
·
·
·
·
600V EMCON technology 70 µm chip
soft , fast switching
low reverse recovery charge
small temperature coefficient
·
C
Applications:
SMPS, resonant applications,
drives
·
Chip Type
VR
IF
50A
Die Size
3.5 x 6.5 mm2
Package
Ordering Code
Q67041-A2825-
A001
SIDC23D60E6
600V
sawn on foil
MECHANICAL PARAMETER:
Raster size
3.5 x 6.5
22.75 / 16.5
2.78 x 5.78
70
mm2
Area total / active
Anode pad size
Thickness
µm
mm
deg
Wafer size
150
Flat position
180
Max. possible chips per wafer
Passivation frontside
Anode metallisation
644 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Cathode metallisation
Die bond
electrically conductive glue or solder
Wire bond
Al, £500µm
Reject Ink Dot Size
Æ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 4273M, Edition 1, 8.01.2002
Preliminary
SIDC23D60E6
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
VR R M
600
V
Continuous forward current limited by
IF
50
T
jmax
A
Single pulse forward current
IFSM
tP = 10 ms sinusoidal
tbd
(depending on wire bond configuration)
Maximum repetitive forward current
IFRM
150
limited by T
jmax
Operating junction and storage
temperature
Tj , Ts t g
-55...+150
°C
Static Electrical Characteristics (tested on chip), T =25 °C, unless otherwise specified
j
Value
Parameter
Symbol
Unit
Conditions
min.
600
Typ.
max.
27
Reverse leakage current
IR
VR=600V
IR=3mA
µA
V
Tj=25 ° C
Cathode-Anode
breakdown Voltage
VBr
VF
Tj=25°C
Forward voltage drop
IF=50A
1.25
V
Tj=25 ° C
Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component
Value
Parameter
Symbol
Unit
Conditions
min.
Typ.
tbd
max.
IF=50A
Reverse recovery time
trr1
trr2
Tj =25°C
ns
di/dt=2900A/ ms
VR=300V
Tj =125°C
IF=50A
Peak recovery current
IRRM1
IRRM2
Tj =25°C
Tj =125°C
Tj=25 ° C
75.3
A
di/dt=2900A/ ms
VR= 300V
85.2
3.6
IF=50A
Reverse recovery charge Qrr1
Qrr2
µC
A/ms
1
di/dt=2900A/ ms
VR= 300V
Tj=125° C
5.9
tbd
IF=50A
Peak rate of fall of reverse dir r 1/dt
recovery current
Tj= 25° C
di/dt=2900A/ ms
VR= 300V
dir r 2/dt
Tj=125° C
IF=50A
Softness
S1
S2
tbd
Tj=25 ° C
di/dt=2900A/ ms
VR= 300V
Tj=125° C
Edited by INFINEON Technologies AI PS DD HV3, L 4273M, Edition 1, 8.01.2002
Preliminary
SIDC23D60E6
Preliminary
SIDC23D60E6
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES /
EUPEC
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 4273M, Edition 1, 8.01.2002
相关型号：
©2020 ICPDF网 联系我们和版权申明