Q67050-A4344-A101 [INFINEON]
IGBT3 Chip; IGBT3芯片型号: | Q67050-A4344-A101 |
厂家: | Infineon |
描述: | IGBT3 Chip |
文件: | 总4页 (文件大小:75K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SIGC11T60NC
IGBT Chip in NPT-technology
C
FEATURES:
This chip is used for:
IGBT Modules
·
·
·
·
600V NPT technology
100µm chip
positive temperature coefficient
easy paralleling
·
Applications:
drives
G
·
Chip Type
VCE
ICn
10A
Die Size
Package
Ordering Code
Q67050-A4158-
A001
SIGC11T60NC
600V
3.25 x 3.25 mm2
sawn on foil
MECHANICAL PARAMETER:
mm2
Raster size
3.25 x 3.25
10.6 / 7.4
2 x 1.6
Area total / active
Emitter pad size
Gate pad size
1.08 x 0.68
100
Thickness
µm
mm
deg
Wafer size
150
Flat position
0
Max.possible chips per wafer
Passivation frontside
Emitter metallization
1414
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Collector metallization
Die bond
electrically conductive glue or solder
Wire bond
Al, £500µm
Reject Ink Dot Size
Æ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 7302-M, Edition 2, 28.11.2003
SIGC11T60NC
MAXIMUM RATINGS:
Parameter
Symbol
VCE
Value
Unit
Collector-emitter voltage, T =25 °C
600
V
A
j
1 )
IC
DC collector current, limited by T
jmax
Icpuls
VGE
Pulsed collector current, tp limited by T
Gate-emitter voltage
30
±20
A
jmax
V
Tj, Ts t g
Operating junction and storage temperature
1 ) depending on thermal properties of assembly
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), T =25 °C, unless otherwise specified:
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
600
1.7
max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=500µA
VGE=15V, IC=10A
IC=350µA, VGE=VCE
VCE=600V, VGE=0V
VCE=0V, VGE=20V
2.0
5.5
2.5
6.5
0.8
120
V
4.5
µA
nA
IGES
DYNAMIC CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Unit
Conditions
min. typ.
max.
Input capacitance
Ciss
Coss
Crss
VC E=25V
VGE=0V
f=1MHz
-
-
-
550
-
-
-
pF
Output capacitance
62
42
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Value
Conditions 1)
Parameter
Symbol
Unit
min. typ.
max.
ns
Tj=125° C
Turn-on delay time
Rise time
td(on)
tr
td(of f )
tf
-
-
-
-
20
8
-
VC C =300V
IC =10A
-
-
-
VGE=±15/V
Turn-off delay time
Fall time
110
20
RG=27W
1) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7302-M, Edition 2, 28.11.2003
SIGC11T60NC
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7302-M, Edition 2, 28.11.2003
SIGC11T60NC
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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Infineon Technologies components may only be used in life-support devices or systems with the express
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Edited by INFINEON Technologies AI PS DD HV3, L 7302-M, Edition 2, 28.11.2003
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