Q68000-A4809 [INFINEON]
NPN Silicon High-Voltage Transistors; NPN硅高压晶体管
| 型号： | Q68000-A4809 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon High-Voltage Transistors |
| 文件： | 总4页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPSA 42
MPSA 43
NPN Silicon High-Voltage Transistors
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: MPSA 92
MPSA 93 (PNP)
1
2
3
Type
Marking
Ordering Code
Pin Configuration
Package 1)
1
2
3
MPSA 42
MPSA 43
MPSA 42
MPSA 43
Q68000-A413
Q68000-A4809
E
B
C
TO-92
Maximum Ratings
Parameter
Symbol
Values
Unit
MPSA 42
300
MPSA 43
200
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
VCE0
VCB0
VEB0
IC
300
200
6
500
100
mA
Base current
IB
Total power dissipation, TC = 66 ˚C 2)
Junction temperature
625
mW
˚C
Ptot
Tj
150
Storage temperature range
– 65 … + 150
Tstg
Thermal Resistance
Junction - ambient
Junction - case 2)
Rth JA
Rth JC
≤ 200
≤ 135
K/W
1)
For detailed information see chapter Package Outlines.
Mounted on AI-heat sink 15 mm × 25 mm × 0.5 mm.
2)
Semiconductor Group
1
5.91
MPSA 42
MPSA 43
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 1 mA, IB = 0
MPSA 42
MPSA 43
300
200
–
–
–
–
Collector-base breakdown voltage
V(BR)CB0
IC = 100 µA, IB = 0
MPSA 42
MPSA 43
300
200
–
–
–
–
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
V(BR)EB0
ICB0
6
–
–
Collector-base cutoff current
VCB = 200 V
VCB = 160 V
VCB = 200 V, TA = 150 °C
VCB = 160 V, TA = 150 °C
MPSA 42
MPSA 43
MPSA 42
MPSA 43
–
–
–
–
–
–
–
–
100
100
20
nA
nA
µA
µA
20
Emitter-base cutoff current
VBE = 3 V, IC = 0
DC current gain 1)
IEB0
hFE
–
–
100
nA
–
IC =1 mA, VCE = 10 V
IC =10 mA, VCE = 10 V
IC =30 mA, VCE = 10 V
25
40
40
–
–
–
–
–
–
Collector-emitter saturation voltage 1)
VCEsat
V
IC = 20 mA, IC = 2 mA
MPSA 42
MPSA 43
–
–
–
–
0.5
0.4
Base-emitter saturation voltage
VBEsat
IC = 20 mA, IB = 2 mA
–
–
–
0.9
–
AC Characteristics
Transition frequency
fT
70
MHz
pF
IC = 20 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
Cobo
VCB = 20 V, f = 1 MHz
MPSA 42
MPSA 43
–
–
–
–
3
4
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
MPSA 42
MPSA 43
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load RthJA = f (tp)
Operating range IC = f(VCE)
TA = 25 °C, D = 0
Collector cutoff current ICB0 = f (TA)
VCB = VCBmax
Semiconductor Group
3
MPSA 42
MPSA 43
DC current gain hFE = f (IC)
VCE = 10 V
Transition frequency fT = f (IC)
VCE = 20 V, f = 20 MHz, VCE = 10 V
Collector current IC = f (VBE)
VCE = 10 V
Semiconductor Group
4
相关型号：
©2020 ICPDF网 联系我们和版权申明