Q68000-A6501 [INFINEON]
PNP Silicon Switching Transistors; PNP硅开关晶体管
| 型号： | Q68000-A6501 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Switching Transistors |
| 文件： | 总6页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon Switching Transistors
SMBT 2907
SMBT 2907 A
● High DC current gain: 0.1 mA to 500 mA
● Low collector-emitter saturation voltage
● Complementary types: SMBT 2222,
SMBT 2222 A (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
SMBT 2907
SMBT 2907 A
s2B
s2F
Q68000-A6501
Q68000-A6474
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
SMBT 2907
SMBT 2907 A
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
VCE0
VCB0
VEB0
40
60
V
60
5
Collector current
I
C
600
330
150
mA
mW
˚C
Total power dissipation, TS = 77 ˚C
Junction temperature
P
tot
T
j
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 290
≤ 220
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBT 2907
SMBT 2907 A
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 10 mA
SMBT 2907
40
60
–
–
–
–
SMBT 2907 A
Collector-base breakdown voltage
IC
= 10 µA
SMBT 2907
60
60
–
–
–
–
SMBT 2907 A
Emitter-base breakdown voltage
= 10 µA
5
–
–
IE
Collector cutoff current
ICB0
V
V
V
V
CB = 50 V
CB = 50 V
CB = 50 V, T
CB = 50 V, T
SMBT 2907
SMBT 2907 A
SMBT 2907
SMBT 2907 A
–
–
–
–
–
–
–
–
20
10
20
10
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
Emitter cutoff current
IEB0
–
–
10
nA
VEB = 3 V
DC current gain1)
hFE
–
35
75
50
100
75
100
100
100
30
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
300
300
–
IC
IC
IC
IC
IC
= 100 µA, VCE = 10 V
SMBT 2907
SMBT 2907 A
SMBT 2907
SMBT 2907 A
SMBT 2907
SMBT 2907 A
SMBT 2907
SMBT 2907 A
SMBT 2907
SMBT 2907 A
=
1 mA, VCE = 10 V
= 10 mA, VCE = 10 V1)
= 150 mA, VCE = 10 V1)
= 500 mA, VCE = 10 V1)
50
–
Collector-emitter saturation voltage1)
V
CEsat
BEsat
V
–
–
–
–
0.4
1.6
I
C
= 150 mA, I
B
= 15 mA
= 50 mA
IC
= 500 mA, I
B
Base-emitter saturation voltage1)
V
–
–
–
–
1.3
2.6
I
C
= 150 mA, I
B
= 15 mA
= 50 mA
IC
= 500 mA, I
B
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
SMBT 2907
SMBT 2907 A
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Transition frequency
f
T
200
–
–
–
–
–
MHz
pF
I
C
= 20 mA, VCE = 20 V, f = 100 MHz
Output capacitance
CB = 10 V, f = 1 MHz
Input capacitance
C
obo
ibo
8
V
C
–
30
VEB = 0.5 V, f = 1 MHz
V
CC = 30 V, I = 150 mA, IB1 = 15 mA
C
Delay time
Rise time
t
t
d
r
–
–
–
–
10
40
ns
ns
V
CC = 6 V, I = 150 mA, IB1 = IB2 = 15 mA
C
Storage time
Fall time
t
t
stg
f
–
–
–
–
80
30
ns
ns
Test circuits
Delay and rise time
Storage and fall time
Semiconductor Group
3
SMBT 2907
SMBT 2907 A
Total power dissipation Ptot = f (T
A
*; TS
)
Collector-base capacitance CCB = f (VCB
)
* Package mounted on epoxy
f = 1 MHz
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
C
V
CE = 20 V
Semiconductor Group
4
SSMMBBTT22990077
SMBT2907A
Saturation voltage I
C
= f (VBEsat, VCEsat
)
Delay time t
Rise time t
d
r
= f (I
C
)
h
FE = 10
= f (I )
C
hFE = 10
Storage time tstg = f (I
C
)
Fall time t
f
= f (I )
C
Semiconductor Group
5
SMBT 2907
SMBT 2907 A
DC current gain hFE = f (I )
C
Semiconductor Group
6
相关型号：
Q68000-A6622
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching)
INFINEON
Q68000-A6887
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated)
INFINEON
©2020 ICPDF网 联系我们和版权申明