RDHA701FP10A8QK [INFINEON]
Radiation Hardended, Octal, Buffered and Non-Buffered, Solid State Relays; 辐射Hardended ，八通道，缓冲和非缓冲，固态继电器
| 型号： | RDHA701FP10A8QK |
| 厂家： | 
Infineon |
| 描述： | Radiation Hardended, Octal, Buffered and Non-Buffered, Solid State Relays |
| 文件： | 总10页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95878C
Radiation Hardended, Octal,
Buffered and Non-Buffered,
Solid State Relays
RDHA701FP10A8CK
RDHA701FP10A8QK
Octal, 100V, 1.5A
Product Summary
Part Number
Voltage Current
tr / tf
Buffer
RDHA701FP10A8CK
RDHA701FP10A8QK
100V
100V
1.5A
1.5A
Fast
None
5.0V
Controlled
64-PIN FLAT PACK
Description
Features:
The RDHA701FP10A8CK, RDHA701FP10A8QK
are a family of radiation hardened, octal, single-pole,
normally open, buffered and non-buffered solid state
relays. These devices are actuated by an input
voltage or current, depending on model, and have
been characterized for 100 krad(Si) total dose. These
parts are useful for applications requiring a compact,
hermetic device.
n
n
n
Total Dose Capability to 100krad(Si)
Optically Coupled
Buffered Input Stage
(RDHA701FP10A8QK)
Input Current Actuated
(RDHA701FP10A8CK)
1000VDC Input to Output Isolation
Hermetically Sealed Package
n
n
n
Absolute Maximum Ratings per Channel @ Tj=25°C (unless otherwise specified)
Parameter
Symbol
Value
100
1.5
Units
V
S
V
A
Output Maximum Voltage
Output Current
I
O
V
±10
±10
10
Input Buffer Voltage - RDHA701FP10A8QK
Input Buffer Current - RDHA701FP10A8QK
Input Supply Voltage (Optocoupler) - RDHA701FP10A8QK
Input Supply Current - RDHA701FP10A8CK / RDHA701FP10A8QK
Peak Input Supply Current (t ≤1.0ms) - RDHA701FP10A8CK
Power Dissipation
V
IN
I
mA
V
IN
V
DD
I
30
100
DD
mA
W
I
DD pk
P
5.5
DISS
T
J
Operating Temperature Range
-55 to +125
-65 to +150
300
T
S
T
L
Storage Temperature Range
°C
Lead Temperature
For notes, please refer to page 4
www.irf.com
1
03/29/06
RDHA701FP10A8CK, RDHA701FP10A8QK
RDHA701FP10A8CK
General Characteristics per Channel @ -55°C TC +125°C (Unless Otherwise Specified)
Parameter
Input Supply Current
Input Voltage Drop
Group A
Subgroups
Test Conditions
Symbol Min. Typ. Max. Units
I
I
= 1.0A
I
DD
--
10
--
25
1.6
2.2
1.4
1.0
mA
V
O
1
2
3
1
1.2
1.4
= 10mA
V
L
--
IN
--
1.0
--
V
V
= 1.0KVdc, dwell = 5.0s
I
I-O
Input-to-Output Leakage Current
Output Capacitance
µ
A
--
I-O
= 0.8V, f = 1.0MHz, V = 25V
S
IN
C
C
R
--
145
--
pF
OSS
T
I
= 25°C
= 10mA
Thermal Resistance
MTBF (Per Channel)
--
--
--
18
--
°C/W
MHrs
DD
THJC
MIL-HDBK-217F, SF@Tc= 25°C
48
RDHA701FP10A8QK
General Characteristics per Channel @ -55°C TC +125°C (Unless Otherwise Specified)
Parameter
Group A
Test Conditions
Symbol Min. Typ. Max. Units
Subgroups
V
4.5
--
10
--
--
Input Buffer Threshold Voltage
Input Supply Current
,
V
IN(TH)
V
V
V
V
= 5.0V, I = 1.0A
O
--
--
--
15
25
1.0
DD
DD
I-O
I
mA
DD
= 10V, I = 1.0A
O
= 1.0KVdc, dwell = 5.0s
I
I-O
Input-to-Output Leakage Current
Output Capacitance
1
µA
--
= 0.8V, f = 1.0MHz, V = 25V
S
= 25°C
IN
C
--
145
--
pF
C
OSS
T
V
= 5.0V, V = 5.0V
,
R
THJC
Thermal Resistance
MTBF (Per Channel)
--
--
--
18
--
°C/W
MHrs
IN
DD
24.6
MIL-HDBK-217F, SF@Tc= 25°C
For notes, please refer to page 5
2
www.irf.com
RDHA701FP10A8CK, RDHA701FP10A8QK
Pre-Irradiation
RDHA701FP10A8CK
Electrical Characteristics per Channel @ -55°C TC +125°C (Unless Otherwise Specified)
Parameter
Group A
Test Conditions
Symbol Min. Typ. Max. Units
Subgroups
0.24 0.35
0.45 0.75
1
2
--
Ω
Output On-Resistance
Output Leakage Current
Turn-On Delay
I
= 10mA, I = 1.0A
O
R
DS(ON)
DD
--
--
--
V
V
= 0.8V, V = 100V
S
1
2
--
--
10
25
IN
IN
µ
A
I
O
= 0.8V, V = 80V
S
I
= 10mA, V = 28V, D = 2.0%
S
DD
1,2,3
1,2,3
1,2,3
1,2,3
t
t
--
--
--
--
0.6
3.5
0.5
7.2
2.5
7.0
2.0
9.5
on
off
Ω
µ
RC = 41 /100 F, PW = 50ms
V
= 28V, D = 2.0%
S
Turn-Off Delay
Ω
µ
RC = 41 /100 F, PW = 50ms
ms
I
= 10mA, V = 28V, D = 2.0%
DD
S
Rise Time
Fall Time
,
t
r
Ω
µ
RC = 41 /100 F, PW = 50ms
V
= 28V, D = 2.0%
S
,
t
f
RC = 41Ω/100µF, PW = 50ms
Pre-Irradiation
RDHA701FP10A8QK
Electrical Characteristics per Channel @ -55°C TC +125°C (Unless Otherwise Specified)
Parameter
Group A
Test Conditions
Symbol Min. Typ. Max. Units
Subgroups
1
2
--
--
--
--
0.24 0.35
0.45 0.75
Ω
Output On-Resistance
Output Leakage Current
Input Buffer Current
Turn-On Delay
I
= 10mA, I = 1.0A
O
R
DS(ON)
DD
V
V
= 0.8V, V = 100V
S
1
--
--
--
--
10
25
IN
µ
A
I
O
= 0.8V, V = 80V
S
2
IN
1
1.0
3.0
--
--
µ
A
V
= 5.0V
I
IN
IN
on
off
2,3
I
= 10mA, V = 28V, D = 2.0%
S
DD
1,2,3
1,2,3
1,2,3
1,2,3
t
t
--
--
--
--
4.5
35
15
60
3.0
15
RC = 41Ω/100µF, PW = 50ms
= 28V, D = 2.0%
V
S
Turn-Off Delay
RC = 41Ω/100µF, PW = 50ms
= 10mA, V+ = 28V, D = 2.0%
ms
I
DD
Rise Time
Fall Time
,
t
1.1
11
r
RC = 41Ω/100µF, PW = 50ms
= 28V, D = 2.0%
V
S
,
t
f
RC = 41Ω/100µF, PW = 50ms
For notes, please refer to page 5
www.irf.com
3
RDHA701FP10A8CK, RDHA701FP10A8QK
Post Total Dose Irradiation ,,
RDHA701FP10A8CK
Electrical Characteristics per Channel @ 25°C (Unless Otherwise Specified)
Parameter
Group A
Test Conditions
Symbol Min. Typ. Max. Units
Subgroups
R
1
1
--
--
0.24 0.35
Output On-Resistance
Output Leakage Current
I
V
= 10mA, I = 1.0A
O
= 0.8V, V = 100V
S
Ω
µ
A
DS(ON)
DD
I
--
10
IN
O
I
= 10mA, V = 28V, D = 2.0%
S
DD
Turn-On Delay
Turn-Off Delay
1
1
1
1
t
--
--
--
--
0.6
2.5
on
off
Ω
µ
RC = 41 /100 F, PW = 50ms
V
= 28V, D = 2.0%
S
t
3.5
0.5
7.2
7.0
2.0
9.5
RC = 41Ω/100µF, PW = 50ms
= 10mA, V = 28V, D = 2.0%
ms
I
DD
S
Rise Time
Fall Time
,
t
r
Ω
µ
RC = 41 /100 F, PW = 50ms
V
= 28V, D = 2.0%
S
,
t
f
RC = 41Ω/100µF, PW = 50ms
Post Total Dose Irradiation ,,
RDHA701FP10A8QK
Electrical Characteristics per Channel @ 25°C (Unless Otherwise Specified)
Parameter
Group A
Subgroups
Test Conditions
Symbol Min. Typ. Max. Units
R
1
1
1
--
--
--
0.24 0.35
Output On-Resistance
Output Leakage Current
Input Buffer Current
I
V
V
= 10mA, I = 1.0A
O
= 0.8V, V = 100V
S
Ω
DS(ON)
DD
I
O
--
--
10
IN
IN
µ
A
= 5.0V
I
1.0
IN
I
= 10mA, V = 28V, D = 2.0%
S
DD
Turn-On Delay
Turn-Off Delay
1
1
1
1
t
--
--
--
--
4.5
35
15
60
on
off
Ω
µ
RC = 41 /100 F, PW = 50ms
V
= 28V, D = 2.0%
S
t
RC = 41Ω/100µF, PW = 50ms
= 10mA, V = 28V, D = 2.0%
ms
I
DD
S
Rise Time
Fall Time
,
t
1.1
11
3.0
15
r
Ω
µ
RC = 41 /100 F, PW = 50ms
V
= 28V, D = 2.0%
S
,
t
f
RC = 41Ω/100µF, PW = 50ms
For notes, please refer to page 5
4
www.irf.com
RDHA701FP10A8CK, RDHA701FP10A8QK
Notes for Maximum Ratings, General and Electrical Characteristic Tables
Specification is guaranteed by design
Rise and fall times are controlled internally
Inputs protected for VIN< 1.0V and VIN > 7.5V
m Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to
insure that transient currents do not cause a violation of SOA. If transient conditions are present, IR recommends a
complete simulation to be performed by the end user to ensure compliance with SOA requirements as specified in the
IRHQ57110 data sheet
n While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for
product derating, as applicable for the application
o Reference Figures 2, 3 & 4 for Switching Test Circuits and Wave Form
Input Supply voltage for RDHA701FP10A8QK shall not exceed 5.25V@Tc ≥ 70°C
Total Dose Irradiation with Input Bias. 10mA IDD applied and VDS = 0 during Irradiation
Total Dose Irradiation with Output Bias. 80 Volts VDS applied and IDD = 0 during Irradiation
International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig 1: Maximum Drain Current Vs Case Temperature
www.irf.com
5
RDHA701FP10A8CK, RDHA701FP10A8QK
Schematic
Notes
1. Buffered Input stages on RDHA701FP10A8QK only
2. Input Current Actuation (*) on RDHA701FP10A8CK only
6
www.irf.com
RDHA701FP10A8CK, RDHA701FP10A8QK
100 µF
Fig 2: Switching Test Circuit for RDHA701FP10A8CK only
100 µF
Fig 3: Switching Test Circuit for RDHA701FP10A8QK only
www.irf.com
7
RDHA701FP10A8CK, RDHA701FP10A8QK
Fig 4: Switching Test Waveform
Radiation Performance
International Rectifier Radiation Hardened SSRs are tested to verify their hardness capability. The hardness
assurance program at IR uses a Cobalt-60 (60Co) source and heavy ion irradiation. Both pre- and post-
irradiation performance are tested and specified using the same drive circuitry and test conditions to provide
a direct comparison.
8
www.irf.com
RDHA701FP10A8CK, RDHA701FP10A8QK
Pin Designation - RDHA701FP10A8CK
Pin No. Designation
Pin No.
Designation
Pin No. Designation Pin No. Designation
1
2
Current IN 1
N/C
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Current IN 5
N/C
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Drain 8
Drain 8
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
Drain 4
Drain 4
3
N/C
N/C
Source 8
Source 8
Drain 7
Source 4
Source 4
Drain 3
4
Current OUT 1
Current IN 2
N/C
Current OUT 5
Current IN 6
N/C
5
6
Drain 7
Drain 3
7
N/C
N/C
Source 7
Source 7
Drain 6
Source 3
Source 3
Drain 2
8
Current OUT 2
Current IN 3
N/C
Current OUT 6
Current IN 7
N/C
9
10
11
12
13
14
15
16
Drain 6
Drain 2
N/C
N/C
Source 6
Source 6
Drain 5
Source 2
Source 2
Drain 1
Current OUT 3
Current IN 4
N/C
Current OUT 7
Current IN 8
N/C
Drain 5
Drain 1
N/C
Current OUT 4
Case ground
Current OUT 8
Source 5
Source 5
Source 1
Source 1
Pin Designation - RDHA701FP10A8QK
Pin No. Designation
Pin No.
Designation
Pin No. Designation Pin No. Designation
1
2
+5V 1
IN 1
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
+ 5V 5
IN 5
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Drain 8
Drain 8
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
Drain 4
Drain 4
3
N/C
N/C
Source 8
Source 8
Drain 7
Source 4
Source 4
Drain 3
4
5V RTN 1
+5V 2
IN 2
5V RTN 5
+ 5V 6
IN 6
5
6
Drain 7
Drain 3
7
N/C
N/C
Source 7
Source 7
Drain 6
Source 3
Source 3
Drain 2
8
5V RTN 2
+ 5V 3
IN 3
5V RTN 6
+ 5V 7
IN 7
9
10
11
12
13
14
15
16
Drain 6
Drain 2
N/C
N/C
Source 6
Source 6
Drain 5
Source 2
Source 2
Drain 1
5V RTN 3
+ 5V 4
IN 4
5V RTN 7
+ 5V 8
IN 8
Drain 5
Drain 1
N/C
5V RTN 4
Case ground
5V RTN 8
Source 5
Source 5
Source 1
Source 1
Case ground is for EMI shielding purposes only. It does not have to be connected for proper relay operation
www.irf.com
9
RDHA701FP10A8CK, RDHA701FP10A8QK
Case Outline and Dimensions — 64-Pin Flat Pak Package
Notes
1. Dimensioning and Tolerancing per ASME Y14.5SM-1994
2. Controlling Dimension: Inch
3. Dimensions are shown in inches
4. Tolerances are +/- 0.005 UOS
Part Numbering Nomenclature
RD H A 7 01 FP 10
A
8
C/Q
K
Screening Level
K = Class K per MIL-PRF-38534
Device Type
RD = DC Solid State Relay
Radiation Characterization
Features
C = Non Buffered Compromise
Q = 5.0 Volt Buffered Controlled
H = RAD Hard
Generation
A = Current Design
Poles
8 = 8 Poles
Radiation Level
7 = 100K Rad (Si)
Throw Configuration
A = Single Throw, Normally Open
Current
01 = 1.0A
Volts
10 = 100 Volts
Package
FP = 64-Pin Flat Pack
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2006
10
www.irf.com
相关型号：
RDHA710SE10A2FP
Radiation Hardened Dual 100V 10A Solid-State Relay with Buffered Inputs and Fast Response - Unscreened
INFINEON
RDHA710SE10A2QP
Radiation Hardened Dual 100V 10A Solid-State Relay with Buffered Inputs Controlled Response and 5.0V Logic Drive Voltage - Unscreened
INFINEON
RDHA710SE10A2SK
Transistor Output SSR, 1-Channel, 1000V Isolation, HERMETICALLY SEALED, SURFACE MOUNT PACKAGE-8
INFINEON
©2020 ICPDF网 联系我们和版权申明