RDHA710SE10A2QP [INFINEON]
Radiation Hardened Dual 100V 10A Solid-State Relay with Buffered Inputs Controlled Response and 5.0V Logic Drive Voltage - Unscreened;型号: | RDHA710SE10A2QP |
厂家: | Infineon |
描述: | Radiation Hardened Dual 100V 10A Solid-State Relay with Buffered Inputs Controlled Response and 5.0V Logic Drive Voltage - Unscreened |
文件: | 总6页 (文件大小:116K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95876A
Radiation Hardended,
Solid-State Relay with
Buffered Inputs
RDHA710SE10A2QK
Dual 100V, 10A
Product Summary
Part
Breakdown Current
tr / tf
Logic Drive
Number
Voltage
Voltage
RDHA710SE10A2QK
100V
10A
Controlled
5.0V
8-PIN SURFACE MOUNT
Description
The RDHA710SE10A2QK is a radiation hardened
dual solid-state relay in a hermetic package. It is
configured as a dual, single-pole-single-throw
(SPST) normally open relay with common input
supply. This device is characterized for 100 krad(Si)
total ionizing dose. The input and output MOSFETs
utilize International Rectifier’s R5 technology. The
RDHA710SE10A2QK is optically coupled and
actuated by standard logic inputs.
Features:
n
n
n
n
n
n
n
Total Dose Capability to 100krad(Si)
Optically Coupled
1000VDC Input to Output Isolation
Buffered Input Stage
5.0V Compatible Logic Level Input
Controlled Switching Times
Hermetically Sealed Package
Absolute Maximum Ratings per Channel @ Tj=25°C (unless otherwise specified)
Parameter
Symbol
Value
100
20
Units
V
V
S
Output Supply Voltage
Output Current
I
A
V
O
V
IN
±10
±10
Input Buffer Voltage - (pins 4 & 6)
Input Buffer Current
I
mA
V
IN
Input Supply Voltage (pin 5)
Input Supply Current
V
10
DD
mA
W
I
25
60
DD
P
DISS
Power Dissipation
T
J
Operating Temperature Range
Storage Temperature Range
Lead Temperature
-55 to +125
-65 to +150
300
T
S
T
L
°C
For notes, please refer to page 3
www.irf.com
1
03/29/06
RDHA710SE10A2QK
General Characteristics per Channel @ -55°C TC +125°C (Unless Otherwise Specified)
Parameter
Group A
Test Conditions
Symbol Min. Typ. Max. Units
Subgroups
V
V
V
V
V
= 5.0V, I = 10A
O
V
Input Buffer Threshold Voltage
Input Supply Current
4.5
--
10
--
--
V
DD
DD
DD
I-O
IN(TH)
= 5.0V, I = 10A
O
--
--
15
25
1.0
I
I
mA
DD
= 10V, I = 10A
O
= 1.0KVdc, dwell = 5.0s
Input-to-Output Leakage Current
Output Capacitance
1
--
A
µ
--
I-O
= 0.8V, f = 1.0MHz, V =25V
S
IN
C
C
R
--
365
--
pF
OSS
T
= 25°C
V
= 5.0V, V = 5.0V
,
Thermal Resistance
MTBF (Per Channel)
--
--
--
1.7
--
°C/W
MHrs
IN
DD
THJC
MIL-HDBK-217F, SF@Tc= 25°C
6.0
Pre-Irradiation
Electrical Characteristics per Channel @ -55°C TC +125°C (Unless Otherwise Specified)
Parameter
Group A
Test Conditions
Symbol Min. Typ. Max. Units
Subgroups
V
V
V
V
= 5.0V
--
--
--
--
--
--
1
0.070 0.100
0.115 0.145
IN
Ω
Output On-Resistance
Output Leakage Current
R
DS(ON)
= 5.0V, I = 10A
2
1
DD
O
= 0.8V, V = 100V
S
--
--
--
--
25
250
1.0
3.0
IN
IN
µ
A
I
O
= 0.8V, V = 80V
S
2
1
µ
A
Input Buffer Current
Turn-On Delay
V
V
= 5.0V
I
IN
IN
on
off
2,3
=5.0V, V =5.0V, V =30V
IN
DD
S
1,2,3
1,2,3
1,2,3
1,2,3
t
t
--
--
--
--
6.5
26
25
50
5.5
10
RC = 7.0Ω/100µF, PW = 50ms
=0.8V, V =5.0V, V =30V
V
IN
DD
S
Turn-Off Delay
RC = 7.0Ω/100µF, PW = 50ms
=5.0V, V =5.0V, V =30V
ms
V
IN
DD
S
Rise Time
Fall Time
,
t
t
1.3
6.0
r
f
RC = 7.0Ω/100µF, PW = 50ms
=0.8V, V =5.0V, V =30V
V
IN
DD
S
,
RC = 7.0Ω/100µF, PW = 50ms
For notes, please refer to page 3
2
www.irf.com
RDHA710SE10A2QK
Post Total Dose Irradiation ,,
Electrical Characteristics per Channel @ 25°C (Unless Otherwise Specified)
Parameter
Group A
Subgroups
1
Test Conditions
Symbol Min. Typ. Max. Units
V
V
V
V
= 5.0V, V = 5.0V, I = 10A
R
DS(ON)
-- 0.070 0.100
Output On-Resistance
Output Leakage Current
Input Buffer Current
Ω
IN
IN
IN
IN
DD
O
= 0.8V, V = 100V
S
1
1
--
--
--
--
25
I
O
A
µ
= 5.0V
I
1.0
IN
=5.0V, V =5.0V, V =30V
DD
S
Turn-On Delay
Turn-Off Delay
Rise Time
1
1
1
1
--
--
--
--
6.5
26
25
50
t
on
off
RC = 7.0Ω/100µF, PW = 50ms
=0.8V, V =5.0V, V =30V
V
IN
DD
S
t
RC = 7.0Ω/100µF, PW = 50ms
=5.0V, V =5.0V, V =30V
ms
V
IN
DD
S
t
1.3
6.0
5.5
10
r
RC = 7.0 /100 F, PW = 50ms
Ω
µ
V
=0.8V, V =5.0V, V =30V
IN
DD S
Fall Time
t
f
RC = 7.0Ω/100µF, PW = 50ms
Notes for Maximum Ratings, Electrical and General Characteristic Tables
Specification is guaranteed by design
Rise and fall times are controlled internally
Inputs protected for VIN< 1.0V and VIN > 7.5V
m Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to
insure that transient currents do not cause violation of SOA. If transient conditions are present, IR recommends a
complete simulation to be performed by the end user to insure compliance with SOA requirements as specified in the
IRHNJ57130 data sheet
n While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for
product derating, as required for the application
o Reference Figures 3 & 4 for Switching Test Circuits and Wave Form
Input Supply voltage shall not exceed 5.25V@Tc ≥ 70°C
Total Dose Irradiation with Input Bias. 10mA IDD applied and VDS = 0 during Irradiation
Total Dose Irradiation with Output Bias. 80 Volts VDS applied and IDD = 0 during Irradiation
International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program
www.irf.com
3
RDHA710SE10A2QK
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig 1: Maximum Drain Current Vs Case Temperature
Pin 1 - OUT 1+
Pin 4 - INPUT 1
Opto
Isolation
Pin 2 - OUT 1-
Pin 8 - OUT 2+
Pin 3 - GND
Pin 5 - VDD
Pin 6 - INPUT 2
Opto
Isolation
Pin 7 - OUT 2-
Fig 2: Typical Application
Radiation Performance
International Rectifier Radiation Hardened MOSFETs are tested to verify their hardness capability. The
hardness assurance program at IR uses a Cobalt-60 (60Co) Source and heavy ion irradiation. Both pre- and
post- irradiation performance are tested and specified using the same drive circuitry and test conditions to
provide a direct comparision.
4
www.irf.com
RDHA710SE10A2QK
100 µF
Fig 3: Switching Test Circuit (Only one channel shown)
Fig 4: Switching Test Waveform
www.irf.com
5
RDHA710SE10A2QK
Case Outline and Dimensions — 8-Pin Surface Mount Package
Pin Assignment
Pin #
Pin Description
1
2
3
OUT 1 +
OUT 1 -
INPUT GND
INPUT 1
4
5
V
DD
6
7
8
INPUT 2
OUT 2 -
OUT 2 +
Notes
1. Dimensioning and Tolerancing per ASME Y14.5SM-1994
2. Controlling Dimension: Inch
3. Dimensions are shown in inches
4. Tolerances are +/- 0.005 UOS
Part Numbering Nomenclature
RD H A 7 10 SE 10
A
2
Q
K
Screening Level
K = Class K per MIL-PRF-38534
Device Type
RD = DC Solid State Relay
Radiation Characterization
Features
Q = 5.0 Volt Buffered Controlled
H = RAD Hard
Generation
A = Current Design
Poles
2 = Double Pole
Radiation Level
7 = 100K Rad (Si)
Throw Configuration
A = Single Throw, Normally Open
Current
10 = 10A
Package
SE = 8-Pin Surface Mount
Volts
10 = 100 Volts
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776
Data and specifications subject to change without notice. 03/2006
6
www.irf.com
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