RDHB710SE20A2SX_15 [INFINEON]

Hermetically Sealed Package;


型号：	RDHB710SE20A2SX_15
厂家：	Infineon
描述：	Hermetically Sealed Package
文件：	总7页 (文件大小：136K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD-97808

Radiation Hardended,

Solid-State Relay

with Buffered Inputs

RDHB710SE20A2SX

Dual, 200V, 10A

Product Summary 5

Part

Breakdown Current

tr / tf

Logic Drive

Number

Voltage

RDHB710SE20A2SX

200V

10A

Controlled

3.3V

8-PIN SURFACE MOUNT

Description

The RDHB710SE20A2SX is a radiation hardened

dual solid-state relay in a hermetic package. It is

configured as a dual, single-pole-single-throw

(SPST) normally open relay with common input

supply. This device is characterized for 100 Krad(Si)

total ionizing dose, and neutron fluence level of

1.8E¹²n/cm². The input and output MOSFETs utilize

International Rectifier’s R6 technology. The

RDHB710SE20A2SX is optically coupled and

actuated by standard logic inputs.

Features:

Total Dose Capability to 100 Krad (Si)

Neutron Fluence Level of 1.8E¹²n/cm²

Optically Coupled

1000VDC Input to Output Isolation

Buffered Input Stage

3.3V Compatible Logic Level Input

Controlled Switching Times

Hermetically Sealed Package

Absolute Maximum Ratings per Channel @ TJ = 25°C (unless otherwise specified)

Parameter

Symbol

Value

200

Units

Output Voltage 5, 8

4, 5

Output Current

Input Buffer Voltage - (Pins 4 & 6)

Input Buffer Current

±7.0

±10

Input Supply Voltage (Pin 5)

Input Supply Current

Power Dissipation ^{4, 5}

DISS

Operating Temperature Range

Storage Temperature Range

Lead Temperature

-55 to +150

-65 to +150

300

°C

For Notes, please refer to page 3

www.irf.com

04/22/13

RDHB710SE20A2SX

Dual, 200V, 10A

General Characteristics per Channel @ -55°C £ TC £ +125°C (unless otherwise specified)

Parameter

Group A

Test Conditions

Symbol Min. Typ. Max. Units

Subgroups

Input Buffer Threshold Voltage ^{1, 3}

Input-to-Output Leakage Current

3.0

= 5.0V, I = 10A

IN(TH)

= 1.0KVdc, dwell = 5.0s

I-O

1.0

µA

I-O

= 25°C

= 0.1V, f = 1.0MHz,

Output Capacitance

Thermal Resistance

210

OSS

= 25V, T = 25°C

1, 4

1.4 °C/W

MHrs

= 3.3V, V = 5.0V

THJC

MTBF (Per Channel)

Weight

MIL-HDBK-217F, SF@Tc= 25°C

6.0

gms

Pre-Irradiation

Electrical Characteristics per Channel @ -55°C £ TC £ +125°C (unless otherwise specified)

Parameter

Group A

Test Conditions

Symbol Min. Typ. Max. Units

Subgroups

= 3.3V

0.15

Output On-Resistance

Output Leakage Current

Input Supply Current

Input Buffer Current

Ω

DS(ON)

= 5.0V, I = 10A

0.29

= 0.1V, V = 200V

250

= 0.1V, V = 150V

= 5.0V, I = 10A

1, 2, 3

= 10V, I = 10A 1, 7

1.0

3.0

= 3.3V

off

2, 3

= 3.3V, V = 5.0V, V = 50V

Turn-On Delay

Turn-Off Delay

Rise Time ^{2, 6}

Fall Time ^{2, 6}

1, 2, 3

1.5

R = 5Ω, PW = 50ms

= 0.1V, V = 5.0V, V = 50V

DD S

R = 5Ω, PW = 50ms

= 3.3V, V = 5.0V, V = 50V

DD S

0.5

2.5

R = 5Ω, PW = 50ms

= 0.1V, V = 5.0V, V = 50V

DD S

R = 5Ω, PW = 50ms

For Notes, please refer to page 3

www.irf.com

RDHB710SE20A2SX

Dual, 200V, 10A

Post Total Dose Irradiation 9, 10, 11

Electrical Characteristics per Channel @ 25°C (unless otherwise specified)

Parameter

Group A

Test Conditions

Symbol Min. Typ. Max. Units

Subgroups

Output On-Resistance

Input Supply Current

Output Leakage Current

Input Buffer Current

Ω

= 3.3V, V = 5.0V, I = 10A

0.15

DS(ON)

= 3.3V, V = 5.0V, I = 10A

= 0.1V, V = 200V

1.0

= 3.3V

= 3.3V, V = 5.0V, V = 50V

Turn-On Delay

Turn-Off Delay

Rise Time ^{2, 6}

Fall Time ^{2, 6}

1.5

Ω

RL = 5 , PW = 50ms

= 0.1V, V = 5.0V, V = 50V

off

Ω

RL = 5 , PW = 50ms

= 3.3V, V = 5.0V, V = 50V

0.5

2.5

Ω

RL = 5 , PW = 50ms

= 0.1V, V = 5.0V, V = 50V

Ω

RL = 5 , PW = 50ms

Notes for Maximum Ratings and Electrical Characteristic Tables

1. Specification is guaranteed by design.

2. Rise and fall times are controlled internally.

3. Inputs protected for VIN < 1.0V and VIN > 7.0V.

4. Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to

insure that transient currents do not cause violation of SOA. If transient conditions are present, IR recommends a

complete simulation to be performed by the end user to insure compliance with SOA requirements as specified in the

IRHNJ67230 data sheet.

5. While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for

product derating, as required for the application.

6. Reference Figures 3 & 4 for Switching Test Circuits and Wave Form; Output Voltage (VO) of Figure 4, Switching

Test Wave Form is representative of the Output MOSFET and Drain-to-Source.

7. Input Supply voltage shall not exceed 5.25V@Tc ≥ 70°C.

8. Breakdown voltage (BVDSS) of Output MOSFET, @ -55°C, shall be derated to 80% of Maximum Rated Voltage.

9. Total Dose Irradiation with Input Bias. 10mA IDD applied and VDS = 0 during Irradiation.

10. Total Dose Irradiation with Output Bias. 160Volts VDS applied and IDD = 0 during Irradiation.

11. International Rectifier does not currently have a DLA certified Radiation Hardness.

Radiation Performance

International Rectifier Radiation Hardened Solid State Relays are tested to verify their hardness capability.

The hardness assurance program at IR uses a Cobalt-60 (⁶⁰Co) Source and heavy ion irradiation. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions to provide a direct comparision.

www.irf.com

RDHB710SE20A2SX

Dual, 200V, 10A

T_C, Case Temperature (°C)

Figure 1: Maximum Drain Current Vs Case Temperature per Channel

Pin 1 - OUT 1+

Pin 4 - INPUT 1

Opto

Isolation

Pin 2 - OUT 1-

Pin 8 - OUT 2+

Pin 3 - GND

Pin 5 - V_DD

Pin 6 - INPUT 2

Opto

Isolation

Pin 7 - OUT 2-

Figure 2: Typical Application

www.irf.com

RDHB710SE20A2SX

Dual, 200V, 10A

VDD=+5V

VS=+50V

5 Ohm

Figure 3: Switching Test Circuit (Only one channel shown)

50%

V_IN

90%

50%

10%

90%

50%

10%

V_OUT

toff

ton

Figure 4: Switching Test Waveform

www.irf.com

RDHB710SE20A2SX

Dual, 200V, 10A

Case Outline and Dimensions — 8-Pin Surface Mount Package

.040

1.375

.545

0.255±.010

0.135±.020

.002

.145

.040

8 PLS.

.150

TYP

.1625

1.050

.270

MAX.

.005

NOTES:

1. Dimensioning and Tolerancing per ASME Y14.53M-1994

2. Controlling Dimension: Inch

3. Dimensions are shown in inches

4. Tolerances are ±0.005 UOS

5. Lead Dimensions are prior to Hot Solder Dip

6. Lead Finish per MIL-PRF-38534, Finish A, Hot Solder Dip (Sn63Pb37)

Pin Designation

Pin #

Pin Description

OUT 1 +

OUT 1 -

INPUT GND

INPUT 1

INPUT 2

OUT 2 -

OUT 2 +

www.irf.com

RDHB710SE20A2SX

Dual, 200V, 10A

Part Numbering Nomenclature

RD H B 7 10 SE 20 A 2 S X

Screening Level

P = Unscreened, 25°C

Electrical Test (Not for Qualification)

X = Class K per MIL-PRF-38534

(Fully compliant Class K is presently

pending DLA Approval)

Device Type

RD = DC Solid

State Relay

Radiation

Characteriization

H = RAD Hard

Features

N = Non Buffered Fast

S = Buffer Controlled Input

Generation

A = Current Design

Number of Poles

1 = Single Pole

2 = Dual Poles

B = R6 Generation

Radiation Level

7= 100 Krad (Si)

Throw Configuration

A = Single Throw, Normally Open

Current

10 = 10A

Voltage

10 =100 Volts

20 = 200 Volts

Package

SE = 8-Pin Surface Mount

IRWORLDHEADQUARTERS:101N.SepulvedaBlvd., ElSegundo,California90245,USATel:(310)252-7105

IRLEOMINSTER:205CrawfordSt., Leominster,Massachusetts01453,USATel:(978)534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/2013

www.irf.com

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