S25FL128SAGBHIC10 [INFINEON]
Quad SPI Flash;
| 型号： | S25FL128SAGBHIC10 |
| 厂家： | 
Infineon |
| 描述： | Quad SPI Flash |
| 文件： | 总165页 (文件大小：5730K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S25FL128S, S25FL256S
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Features
• CMOS 3.0 V core with versatile I/O
• SPI with multi-I/O
- SPI clock polarity and phase modes 0 and 3
- DDR option
- Extended addressing: 24- or 32-bit address options
- Serial command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families
- Multi I/O command set and footprint compatible with S25FL-P SPI family
• READ commands
- Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR
- AutoBoot - Power up or reset and execute a Normal or Quad read command automatically at a preselected
address
- Common flash interface (CFI) data for configuration information
• Programming (1.5 MBps)
- 256- or 512-byte page programming buffer options
- Quad-input page programming (QPP) for slow clock systems
- Automatic ECC-internal hardware error correction code generation with single bit error correction
• Erase (0.5 to 0.65 MBps)
- Hybrid sector size option - Physical set of thirty two 4-KB sectors at top or bottom of address space with all
remaining sectors of 64 KB, for compatibility with prior generation S25FL devices.
- Uniform sector option - always erase 256-KB blocks for software compatibility with higher density and future
devices.
• Cycling endurance
- 100,000 program-erase cycles, minimum
• Data retention
- 20 year data retention, minimum
• Security features
- OTP array of 1024 bytes
- Block protection
• Status Register bits to control protection against program or erase of a contiguous range of sectors.
• Hardware and software control options
- Advanced sector protection (ASP)
• Individual sector protection controlled by boot code or password
• 65-nm MIRRORBIT™ technology with Eclipse architecture
• Core supply voltage: 2.7 V to 3.6 V
• I/O supply voltage: 1.65 V to 3.6 V
- SO16 and FBGA packages
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
page 1
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Logic block diagram
• Temperature range/grade:
- Industrial (40°C to +85°C)
- Industrial Plus (40°C to +105°C)
- Automotive AEC-Q100 grade 3 (40°C to +85°C)
- Automotive AEC-Q100 grade 2 (40°C to +105°C)
- Automotive AEC-Q100 grade 1 (40°C to +125°C)
• Packages (all Pb-free)
- 16-lead SOIC (300 mil)
- WSON 6 8 mm
- BGA-24 6 8 mm
• 5 5 ball (FAB024) and 4 6 ball (FAC024) footprint options
• Known good die (KGD) and known tested die
Logic block diagram
CS#
SRAM
SCK
MIRRORBIT™
Array
SI/IO0
SO/IO1
Y Decoders
Data Latch
I/O
WP#/IO2
Control Logic
HOLD#/IO3
RESET#
Data Path
Datasheet
2
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Performance summary
Performance summary
Table 1
Maximum read rates with the same core and I/O voltage (VIO = VCC = 2.7 V to 3.6 V)
Command
Clock rate (MHz)
MBps
6.25
16.6
26
Read
50
Fast Read
Dual Read
Quad Read
133
104
104
52
Table 2
Maximum read rates with lower I/O voltage (VIO = 1.65 V to 2.7 V, VCC = 2.7 V to 3.6 V)
Command
Clock rate (MHz)
MBps
6.25
8.25
16.5
33
Read
50
66
66
66
Fast Read
Dual Read
Quad Read
Table 3
Maximum read rates DDR (VIO = VCC = 3 V to 3.6 V)
Command
Clock rate (MHz)
MBps
20
40
Fast Read DDR
Dual Read DDR
Quad Read DDR
80
80
80
80
Table 4
Typical program and erase rates
Operation
KBps
1000
1500
30
Page programming (256-byte page buffer - Hybrid sector option)
Page programming (512-byte page buffer - Uniform sector option)
4-KB physical sector erase (Hybrid sector option)
64-KB physical sector erase (Hybrid sector option)
500
256-KB logical sector erase (Uniform sector option)
500
Table 5
Current consumption
Operation
Current (mA)
16 (max)
Serial read 50 MHz
Serial read 133 MHz
Quad read 104 MHz
Quad DDR read 80 MHz
Program
33 (max)
61 (max)
90 (max)
100 (max)
100 (max)
0.07 (typ)
Erase
Standby
Datasheet
3
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Table of contents
Table of contents
Features ...........................................................................................................................................1
Logic block diagram ..........................................................................................................................2
Performance summary ......................................................................................................................3
Table of contents...............................................................................................................................4
1 Overview .......................................................................................................................................9
1.1 General description ................................................................................................................................................9
1.2 Migration notes .......................................................................................................................................................9
1.2.1 Features comparison...........................................................................................................................................9
1.2.2 Known differences from prior generations ......................................................................................................10
1.2.2.1 Error reporting ................................................................................................................................................10
1.2.2.2 Secure silicon region (OTP) ............................................................................................................................10
1.2.2.3 Configuration Register Freeze bit ..................................................................................................................10
1.2.2.4 Sector Erase commands.................................................................................................................................10
1.2.2.5 Deep power down...........................................................................................................................................11
1.2.2.6 New features ...................................................................................................................................................11
2 Serial peripheral interface with multiple input / output (SPI-MIO) ....................................................12
3 Pinouts and signal descriptions......................................................................................................13
3.1 SOIC 16 pinout diagram........................................................................................................................................13
3.2 WSON pinout diagram ..........................................................................................................................................13
3.3 FAB024 pinout diagram ........................................................................................................................................13
3.4 FAC024 pinout diagram ........................................................................................................................................14
3.5 Special handling instructions for FBGA packages...............................................................................................14
3.6 Input/output summary.........................................................................................................................................15
3.7 Address and data configuration...........................................................................................................................15
3.8 RESET#...................................................................................................................................................................16
3.9 Serial Clock (SCK)..................................................................................................................................................16
3.10 Chip Select (CS#).................................................................................................................................................16
3.11 Serial Input (SI) / IO0...........................................................................................................................................16
3.12 Serial Output (SO) / IO1 ......................................................................................................................................17
3.13 Write Protect (WP#) / IO2....................................................................................................................................17
3.14 Hold (HOLD#) / IO3..............................................................................................................................................17
3.15 Core Voltage Supply (VCC)...................................................................................................................................18
3.16 Versatile I/O Power Supply (VIO).........................................................................................................................18
3.17 Supply and Signal Ground (VSS) .........................................................................................................................18
3.18 Not Connected (NC) ............................................................................................................................................18
3.19 Reserved for Future Use (RFU) ...........................................................................................................................18
3.20 Do Not Use (DNU)................................................................................................................................................18
3.21 Block diagrams ...................................................................................................................................................19
4 Signal protocols............................................................................................................................20
4.1 SPI clock modes ....................................................................................................................................................20
4.1.1 SDR .....................................................................................................................................................................20
4.1.2 DDR .....................................................................................................................................................................20
4.2 Command protocol...............................................................................................................................................21
4.2.1 Command sequence examples .........................................................................................................................22
4.3 Interface states .....................................................................................................................................................25
4.3.1 Power-off............................................................................................................................................................26
4.3.2 Low power hardware data protection ..............................................................................................................26
4.3.3 Power-on (cold) reset ........................................................................................................................................26
4.3.4 Hardware (warm) reset......................................................................................................................................26
4.3.5 Interface standby...............................................................................................................................................26
4.3.6 Instruction cycle.................................................................................................................................................27
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Table of contents
4.3.7 Hold ....................................................................................................................................................................27
4.3.8 Single input cycle - Host to Memory transfer ...................................................................................................27
4.3.9 Single latency (dummy) cycle ...........................................................................................................................27
4.3.10 Single output cycle - Memory to Host transfer...............................................................................................28
4.3.11 Dual input cycle - Host to Memory transfer ....................................................................................................28
4.3.12 Dual latency (dummy) cycle ............................................................................................................................28
4.3.13 Dual output cycle - Memory to Host transfer .................................................................................................28
4.3.14 QPP or QOR address input cycle .....................................................................................................................28
4.3.15 Quad input cycle - Host to Memory transfer...................................................................................................28
4.3.16 Quad latency (dummy) cycle...........................................................................................................................29
4.3.17 Quad output cycle - Memory to Host transfer ................................................................................................29
4.3.18 DDR single input cycle - Host to Memory transfer..........................................................................................29
4.3.19 DDR dual input cycle - Host to Memory transfer ............................................................................................29
4.3.20 DDR Quad input cycle - Host to Memory transfer...........................................................................................29
4.3.21 DDR latency cycle.............................................................................................................................................29
4.3.22 DDR single output cycle - Memory to Host transfer .......................................................................................30
4.3.23 DDR dual output cycle - Memory to Host transfer..........................................................................................30
4.3.24 DDR Quad output cycle - Memory to Host transfer ........................................................................................30
4.4 Configuration Register effects on the interface ..................................................................................................30
4.5 Data protection.....................................................................................................................................................30
4.5.1 Power-up............................................................................................................................................................30
4.5.2 Low power..........................................................................................................................................................30
4.5.3 Clock pulse count...............................................................................................................................................30
5 Electrical specifications.................................................................................................................31
5.1 Absolute maximum ratings ..................................................................................................................................31
5.2 Thermal resistance ...............................................................................................................................................31
5.3 Operating ranges ..................................................................................................................................................32
5.3.1 Power supply voltages.......................................................................................................................................32
5.3.2 Temperature ranges ..........................................................................................................................................32
5.3.3 Input signal overshoot.......................................................................................................................................32
5.4 Power-up and power-down..................................................................................................................................33
5.5 DC characteristics .................................................................................................................................................34
5.5.1 Active power and standby power modes .........................................................................................................36
6 Timing specifications ....................................................................................................................37
6.1 Key to switching waveforms.................................................................................................................................37
6.2 AC test conditions .................................................................................................................................................37
6.2.1 Capacitance characteristics ..............................................................................................................................38
6.3 Reset ......................................................................................................................................................................38
6.3.1 Power-on (cold) reset ........................................................................................................................................38
6.3.2 Hardware (warm) reset......................................................................................................................................39
6.4 SDR AC characteristics..........................................................................................................................................40
6.4.1 Clock timing .......................................................................................................................................................42
6.4.2 Input / output timing .........................................................................................................................................42
6.5 DDR AC characteristics .........................................................................................................................................44
6.5.1 DDR input timing................................................................................................................................................44
6.5.2 DDR output timing .............................................................................................................................................45
6.5.3 DDR data valid timing using DLP.......................................................................................................................45
7 Address space maps ......................................................................................................................47
7.1 Overview................................................................................................................................................................47
7.1.1 Extended address ..............................................................................................................................................47
7.1.2 Multiple address spaces ....................................................................................................................................47
7.2 Flash memory array ..............................................................................................................................................47
7.3 ID-CFI address space.............................................................................................................................................49
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Table of contents
7.4 OTP address space................................................................................................................................................49
8 Registers......................................................................................................................................51
8.1 Status Register 1 (SR1)..........................................................................................................................................51
8.2 Configuration Register 1 (CR1) .............................................................................................................................53
8.3 Status Register 2 (SR2)..........................................................................................................................................56
8.4 AutoBoot Register.................................................................................................................................................57
8.5 Bank Address Register ..........................................................................................................................................57
8.6 ECC Status Register (ECCSR) ................................................................................................................................58
8.7 ASP Register (ASPR) ..............................................................................................................................................58
8.8 Password Register (PASS).....................................................................................................................................59
8.9 PPB Lock Register (PPBL) .....................................................................................................................................59
8.10 PPB Access Register (PPBAR) .............................................................................................................................60
8.11 DYB Access Register (DYBAR)..............................................................................................................................60
8.12 SPI DDR Data Learning Registers .......................................................................................................................60
9 Embedded algorithm performance tables .......................................................................................62
10 Data protection...........................................................................................................................63
10.1 Secure silicon region (OTP) ................................................................................................................................63
10.1.1 Reading OTP memory space ...........................................................................................................................63
10.1.2 Programming OTP memory space..................................................................................................................63
10.1.3 Infineon programmed random number .........................................................................................................63
10.1.4 Lock bytes ........................................................................................................................................................63
10.2 Write Enable command ......................................................................................................................................63
10.3 Block protection .................................................................................................................................................64
10.3.1 Freeze bit..........................................................................................................................................................64
10.3.2 Write Protect signal..........................................................................................................................................65
10.4 Advanced sector protection ...............................................................................................................................65
10.4.1 ASP Register .....................................................................................................................................................66
10.4.2 Persistent protection bits................................................................................................................................66
10.4.3 Dynamic protection bits ..................................................................................................................................67
10.4.4 PPB Lock Bit (PPBL[0]).....................................................................................................................................67
10.4.5 Sector protection states summary .................................................................................................................67
10.4.6 Persistent Protection mode ............................................................................................................................67
10.4.7 Password Protection mode.............................................................................................................................68
11 Commands .................................................................................................................................69
11.1 Command set summary .....................................................................................................................................70
11.1.1 Extended addressing .......................................................................................................................................70
11.1.2 Read device identification...............................................................................................................................74
11.1.3 Register read or write ......................................................................................................................................74
11.1.3.1 Monitoring operation status.........................................................................................................................74
11.1.3.2 Configuration ................................................................................................................................................74
11.1.4 Read flash array ...............................................................................................................................................74
11.1.5 Program flash array .........................................................................................................................................75
11.1.6 Erase flash array...............................................................................................................................................75
11.1.7 OTP, block protection, and advanced sector protection...............................................................................75
11.1.8 Reset .................................................................................................................................................................75
11.1.9 Reserved...........................................................................................................................................................75
11.2 Identification commands ...................................................................................................................................76
11.2.1 Read Identification - REMS (Read_ID or REMS 90h) .......................................................................................76
11.2.2 Read Identification (RDID 9Fh) ........................................................................................................................77
11.2.3 Read Electronic Signature (RES) (ABh) ...........................................................................................................78
11.3 Register access commands ................................................................................................................................78
11.3.1 Read Status Register-1 (RDSR1 05h) ...............................................................................................................78
11.3.2 Read Status Register-2 (RDSR2 07h) ...............................................................................................................79
Datasheet
6
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Table of contents
11.3.3 Read Configuration Register (RDCR 35h)........................................................................................................79
11.3.4 Bank Register Read (BRRD 16h) ......................................................................................................................79
11.3.5 Bank Register Write (BRWR 17h) .....................................................................................................................80
11.3.6 Bank Register Access (BRAC B9h)....................................................................................................................80
11.3.7 Write Registers (WRR 01h) ...............................................................................................................................81
11.3.8 Write Enable (WREN 06h).................................................................................................................................83
11.3.9 Write Disable (WRDI 04h) .................................................................................................................................84
11.3.10 Clear Status Register (CLSR 30h)...................................................................................................................84
11.3.11 ECC Status Register Read (ECCRD 18h).........................................................................................................85
11.3.12 AutoBoot ........................................................................................................................................................85
11.3.13 AutoBoot Register Read (ABRD 14h) .............................................................................................................87
11.3.14 AutoBoot Register Write (ABWR 15h)............................................................................................................87
11.3.15 Program NVDLR (PNVDLR 43h)......................................................................................................................88
11.3.16 Write VDLR (WVDLR 4Ah)................................................................................................................................88
11.3.17 Data Learning Pattern Read (DLPRD 41h).....................................................................................................89
11.4 Read memory array commands.........................................................................................................................89
11.4.1 Read (Read 03h or 4READ 13h)........................................................................................................................90
11.4.2 Fast Read (FAST_READ 0Bh or 4FAST_READ 0Ch)..........................................................................................91
11.4.3 Dual Output Read (DOR 3Bh or 4DOR 3Ch).....................................................................................................92
11.4.4 Quad Output Read (QOR 6Bh or 4QOR 6Ch)...................................................................................................93
11.4.5 Dual I/O Read (DIOR BBh or 4DIOR BCh).........................................................................................................95
11.4.6 Quad I/O Read (QIOR EBh or 4QIOR ECh) .......................................................................................................97
11.4.7 DDR Fast Read (DDRFR 0Dh, 4DDRFR 0Eh) .....................................................................................................99
11.4.8 DDR Dual I/O Read (BDh, BEh).......................................................................................................................102
11.4.9 DDR Quad I/O Read (EDh, EEh)......................................................................................................................104
11.5 Program flash array commands.......................................................................................................................106
11.5.1 Program granularity ......................................................................................................................................106
11.5.1.1 Automatic ECC ............................................................................................................................................106
11.5.1.2 Page programming .....................................................................................................................................107
11.5.1.3 Single byte programming...........................................................................................................................107
11.5.2 Page Program (PP 02h or 4PP 12h) ...............................................................................................................107
11.5.3 Quad Page Program (QPP 32h or 38h, or 4QPP 34h)....................................................................................109
11.5.4 Program Suspend (PGSP 85h) and Resume (PGRS 8Ah)..............................................................................111
11.6 Erase flash array commands ............................................................................................................................112
11.6.1 Parameter 4-KB Sector Erase (P4E 20h or 4P4E 21h)...................................................................................112
11.6.2 Sector Erase (SE D8h or 4SE DCh) .................................................................................................................113
11.6.3 Bulk Erase (BE 60h or C7h) ............................................................................................................................114
11.6.4 Erase Suspend and Resume Commands (ERSP 75h or ERRS 7Ah)..............................................................115
11.7 One Time Program Array commands...............................................................................................................118
11.7.1 OTP Program (OTPP 42h) ..............................................................................................................................118
11.7.2 OTP Read (OTPR 4Bh)....................................................................................................................................118
11.8 Advanced Sector Protection commands.........................................................................................................119
11.8.1 ASP Read (ASPRD 2Bh) ..................................................................................................................................119
11.8.2 ASP Program (ASPP 2Fh) ...............................................................................................................................119
11.8.3 DYB Read (DYBRD E0h) ..................................................................................................................................120
11.8.4 DYB Write (DYBWR E1h) .................................................................................................................................120
11.8.5 PPB Read (PPBRD E2h) ..................................................................................................................................121
11.8.6 PPB Program (PPBP E3h)...............................................................................................................................121
11.8.7 PPB Erase (PPBE E4h) ....................................................................................................................................122
11.8.8 PPB Lock Bit Read (PLBRD A7h) ....................................................................................................................122
11.8.9 PPB Lock Bit Write (PLBWR A6h) ...................................................................................................................122
11.8.10 Password Read (PASSRD E7h).....................................................................................................................123
11.8.11 Password Program (PASSP E8h) .................................................................................................................123
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Table of contents
11.8.12 Password Unlock (PASSU E9h)....................................................................................................................124
11.9 Reset commands ..............................................................................................................................................125
11.9.1 Software Reset command (RESET F0h) ........................................................................................................125
11.9.2 Mode Bit Reset (MBR FFh)..............................................................................................................................125
12 Data integrity ........................................................................................................................... 126
12.1 Erase endurance ...............................................................................................................................................126
12.2 Data retention ...................................................................................................................................................126
13 Device identification ................................................................................................................. 127
13.1 Command summary .........................................................................................................................................127
13.2 Device ID and common flash interface (ID-CFI) address map ........................................................................129
13.2.1 Field definitions .............................................................................................................................................129
13.3 Device ID and common flash interface (ID-CFI) ASO map — Automotive only ..............................................144
13.4 Registers............................................................................................................................................................144
14 Initial delivery state .................................................................................................................. 148
15 Physical interface ..................................................................................................................... 149
16 Package diagrams..................................................................................................................... 150
17 Ordering information ................................................................................................................ 154
17.1 Ordering part number.......................................................................................................................................154
17.2 Valid combinations — Standard.......................................................................................................................155
17.3 Valid combinations — Automotive grade / AEC-Q100.....................................................................................156
18 Acronyms ................................................................................................................................. 157
Revision history ............................................................................................................................ 159
Datasheet
8
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Overview
1
Overview
1.1
General description
The Infineon S25FL128S and S25FL256S devices are flash non-volatile memory products using:
• MIRRORBIT™ technology - that stores two data bits in each memory array transistor
• Eclipse architecture - that dramatically improves program and erase performance
• 65-nm process lithography
This family of devices connect to a host system via a SPI. Traditional SPI single bit serial input and output (Single
I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial
commands. This multiple width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support
for DDR read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock.
The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or
256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase
than prior generation SPI program or erase algorithms.
Executing code directly from flash memory is often called eXecute-in-Place or XIP. By using FL-S devices at the
higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or
exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramati-
cally.
The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance
required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
1.2
Migration notes
1.2.1
Features comparison
The S25FL128S and S25FL256S devices are command set and footprint compatible with prior generation FL-K
and FL-P families.
Table 1
FL generations comparison[1, 2, 3, 4, 5]
Parameter
Technology node
Architecture
Release date
Density
FL-K
90 nm
Floating gate
In Production
4 Mb - 128 Mb
x1, x2, x4
FL-P
90 nm
MIRRORBIT™
In Production
32 Mb - 256 Mb
x1, x2, x4
FL-S
65 nm
MIRRORBIT™ Eclipse
2H2011
128 Mb - 256 Mb
x1, x2, x4
Bus width
Supply voltage
2.7V - 3.6V
2.7V - 3.6V
2.7V - 3.6V / 1.65V - 3.6V VIO
6 MBps (50 MHz)
17 MBps (133 MHz)
26 MBps (104 MHz)
52 MBps (104 MHz)
20 MBps (80 MHz)
40 MBps (80 MHz)
Normal read speed (SDR)
Fast read speed (SDR)
Dual read speed (SDR)
Quad read speed (SDR)
Fast read speed (DDR)
Dual read speed (DDR)
Notes
6 MBps (50 MHz)
13 MBps (104 MHz)
26 MBps (104 MHz)
52 MBps (104 MHz)
–
5 MBps (40 MHz)
13 MBps (104 MHz)
20 MBps (80 MHz)
40 MBps (80 MHz)
–
–
–
1. 256B program page option only for 128-Mb and 256-Mb density FL-S devices.
2. FL-P column indicates FL129P MIO SPI device (for 128-Mb density).
3. 64-KB sector erase option only for 128-Mb/256-Mb density FL-P and FL-S devices.
4. FL-K family devices can erase 4-KB sectors in groups of 32 KB or 64 KB.
5. See the individual datasheets for further details.
Datasheet
9
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Overview
Table 1
FL generations comparison[1, 2, 3, 4, 5] (continued)
Parameter
FL-K
–
256B
FL-P
–
256B
FL-S
80 MBps (80 MHz)
256B / 512B
Quad read speed (DDR)
Program buffer size
Erase sector size
Parameter sector size
Sector erase time (typ.)
4 KB / 32 KB / 64 KB
4 KB
30 ms (4 KB), 150 ms (64
KB)
64 KB / 256 KB
4 KB
500 ms (64 KB)
64 KB / 256 KB
4 KB (option)
130 ms (64 KB), 520 ms
(256 KB)
Page programming time
(typ.)
700 µs (256B)
1500 µs (256B)
250 µs (256B), 340 µs (512B)
OTP
Advanced sector
protection
768B (3 x 256B)
No
506B
No
1024B
Yes
Auto Boot mode
Erase suspend/resume
Program
suspend/resume
No
Yes
Yes
No
No
No
Yes
Yes
Yes
Operating temperature
40°C to +85°C
40°C to +85°C / +105°C
40°C to +85°C /
+105°C / +125°C
Notes
1. 256B program page option only for 128-Mb and 256-Mb density FL-S devices.
2. FL-P column indicates FL129P MIO SPI device (for 128-Mb density).
3. 64-KB sector erase option only for 128-Mb/256-Mb density FL-P and FL-S devices.
4. FL-K family devices can erase 4-KB sectors in groups of 32 KB or 64 KB.
5. See the individual datasheets for further details.
1.2.2
Known differences from prior generations
Error reporting
1.2.2.1
Prior generation FL memories either do not have error status bits or do not set them if program or erase is
attempted on a protected sector. The FL-S family does have error reporting status bits for program and erase
operations. These can be set when there is an internal failure to program or erase or when there is an attempt to
program or erase a protected sector. In either case, the program or erase operation did not complete as
requested by the command.
1.2.2.2
Secure silicon region (OTP)
The size and format (address map) of the OTP area is different from prior generations. The method for protecting
each portion of the OTP area is different. For additional details, see “Secure silicon region (OTP)” on page 63.
1.2.2.3
Configuration Register Freeze bit
The Configuration Register Freeze bit CR1[0], locks the state of the block protection bits as in prior generations.
In the FL-S family, it also locks the state of the Configuration Register TBPARM bit CR1[2], TBPROT bit CR1[5], and
the secure silicon region (OTP) area.
1.2.2.4
Sector Erase commands
The command for erasing an 8-KB area (two 4-KB sectors) is not supported.
The command for erasing a 4-KB sector is supported only in the 128-Mb and 256-Mb density FL-S devices and only
for use on the thirty two 4-KB parameter sectors at the top or bottom of the device address space.
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Overview
The erase command for 64-KB sectors are supported for the 128-Mb and 256-Mb density FL-S devices when the
ordering option for 4-KB parameter sectors with 64-KB uniform sectors are used. The 64-KB erase command may
be applied to erase a group of sixteen 4-KB sectors.
The erase command for a 256-KB sector replaces the 64-KB erase command when the ordering option for 256-KB
uniform sectors is used for the 128-Mb and 256-Mb density FL-S devices.
1.2.2.5
Deep power down
The deep power down (DPD) function is not supported in FL-S family devices.
The legacy DPD (B9h) command code is instead used to enable legacy SPI memory controllers, that can issue the
former DPD command, to access a new bank address register. The bank address register allows SPI memory
controllers that do not support more than 24 bits of address, the ability to provide higher order address bits for
commands, as needed to access the larger address space of the 256-Mb density FL-S device. For additional infor-
mation, see “Extended address” on page 47.
1.2.2.6
New features
The FL-S family introduces several new features to SPI category memories:
• Extended address for access to higher memory density.
• AutoBoot for simpler access to boot code following power up.
• Enhanced High Performance read commands using mode bits to eliminate the overhead of SIO instructions
when repeating the same type of read command.
• Multiple options for initial read latency (number of dummy cycles) for faster initial access time or higher clock
rate read commands.
• DDR read commands for SIO, DIO, and QIO.
• Automatic ECC for enhanced data integrity.
• Advanced sector protection for individually controlling the protection of each sector. This is very similar to the
advanced sector protection feature found in several other Infineon parallel interface NOR memory families.
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Serial peripheral interface with multiple input /
output (SPI-MIO)
2
Serial peripheral interface with multiple input / output
(SPI-MIO)
Many memory devices connect to their host system with separate parallel control, address, and data signals that
require a large number of signal connections and larger package size. The large number of connections increase
power consumption due to so many signals switching and the larger package increases cost.
The S25FL128S and S25FL256S devices reduce the number of signals for connection to the host system by serially
transferring all control, address, and data information over 4 to 6 signals. This reduces the cost of the memory
package, reduces signal switching power, and either reduces the host connection count or frees host connectors
for use in providing other features.
The S25FL128S and S25FL256S devices use the industry standard single bit Serial Peripheral Interface (SPI) and
also supports optional extension commands for two bit (Dual) and four bit (Quad) wide serial transfers. This
multiple width interface is called SPI Multi-I/O or SPI-MIO.
Datasheet
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Pinouts and signal descriptions
3
Pinouts and signal descriptions
3.1
SOIC 16 pinout diagram
16
SCK
1
2
3
HOLD#/IO3
VCC
15
14
SI/IO0
VIO/RFU
RESET#/RFU
DNU
13
12
4
5
NC
DNU
DNU
RFU
6
11
DNU
VSS
CS#
7
8
10
9
SO/IO1
WP#/IO2
Figure 1
16-lead SOIC package, top view
3.2
WSON pinout diagram
CS#
SO/IO1
WP#/IO2
VSS
VCC
8
1
HOLD#/IO3
2
3
4
7
6
WSON
SCK
SI/IO0
5
Figure 2
Leadless package (WSON), top view[6]
3.3
FAB024 pinout diagram
1
2
3
4
5
A
B
C
D
E
NC
NC
VSS
RESET#/
RFU
NC
NC
NC
DNU
DNU
DNU
NC
SCK
CS#
VCC
RFU WP#/IO2
SO/IO1 SI/IO0 HOLD#/IO3 NC
NC
NC
VIO/RFU
NC
Figure 3
Notes
24-ball BGA, 5 5 ball footprint (FAB024), top view[7]
6. RESET# and VIO are pulled to VCC internal to the memory device.
7. Signal connections are in the same relative positions as FAC024 BGA, allowing a single PCB footprint to use
either package.
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Pinouts and signal descriptions
3.4
FAC024 pinout diagram
1
2
3
4
A
NC
NC
NC
VSS
RESET#/
RFU
B
DNU
SCK
CS#
VCC
C
DNU
RFU WP#/IO2
D
DNU
SO/IO1 SI/IO0 HOLD#/IO3
E
NC
NC
NC
NC
NC
VIO/RFU
NC
F
NC
Figure 4
24-ball BGA, 4 6 ball footprint (FAC024), top view[9]
3.5
Special handling instructions for FBGA packages
Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The package
and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for
prolonged periods of time.
Note
9. Signal connections are in the same relative positions as FAB024 BGA, allowing a single PCB footprint to use
either package.
Datasheet
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Pinouts and signal descriptions
3.6
Input/output summary
Signal descriptions
Type
Table 2
Signal name
RESET#
Description
Input
Hardware Reset: LOW = Device resets and returns to Standby state, ready to receive
a command. The signal has an internal pull-up resistor and may be left unconnected
in the host system if not used.
SCK
CS#
Input
Input
I/O
I/O
I/O
Serial Clock
Chip Select
SI / IO0
SO / IO1
WP# / IO2
Serial Input for single bit data commands or IO0 for Dual or Quad commands.
Serial Output for single bit data commands. IO1 for Dual or Quad commands.
Write Protect when not in Quad mode. IO2 in Quad mode. The signal has an internal
pull-up resistor and may be left unconnected in the host system if not used for Quad
commands.
HOLD# / IO3
I/O
Hold (pause) serial transfer in single bit or Dual data commands. IO3 in Quad-I/O
mode. The signal has an internal pull-up resistor and may be left unconnected in the
host system if not used for Quad commands.
VCC
VIO
VSS
NC
Supply Core Power Supply.
Supply Versatile I/O Power Supply.
Supply Ground.
Unused Not Connected. No device internal signal is connected to the package connector
nor is there any future plan to use the connector for a signal. The connection may
safely be used for routing space for a signal on a PCB. However, any signal connected
to an NC must not have voltage levels higher than VIO.
RFU
Reserved Reserved for Future Use. No device internal signal is currently connected to the
package connector but there is potential future use of the connector for a signal. It
is recommended to not use RFU connectors for PCB routing channels so that the
PCB may take advantage of future enhanced features in compatible footprint
devices.
DNU
Reserved Do Not Use. A device internal signal may be connected to the package connector.
The connection may be used by Infineon for test or other purposes and is not
intended for connection to any host system signal. Any DNU signal related function
will be inactive when the signal is at VIL. The signal has an internal pull-down resistor
and may be left unconnected in the host system or may be tied to VSS. Do not use
these connections for PCB signal routing channels. Do not connect any host system
signal to this connection.
3.7
Address and data configuration
Traditional SPI single bit wide commands (Single or SIO) send information from the host to the memory only on
the SI signal. Data may be sent back to the host serially on the Serial Output (SO) signal.
Dual or Quad Output commands send information from the host to the memory only on the SI signal. Data will
be returned to the host as a sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and
IO3.
Dual or Quad Input/Output (I/O) commands send information from the host to the memory as bit pairs on IO0
and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on
IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Pinouts and signal descriptions
3.8
RESET#
The RESET# input provides a hardware method of resetting the device to Standby state, ready for receiving a
command. When RESET# is driven to logic LOW (VIL) for at least a period of tRP, the device:
• terminates any operation in progress,
• tristates all outputs,
• resets the volatile bits in the Configuration Register,
• resets the volatile bits in the Status Registers,
• resets the Bank Address Register to ‘0’,
• loads the Program Buffer with all ones,
• reloads all internal configuration information necessary to bring the device to standby mode,
• and resets the internal Control Unit to Standby state.
RESET# causes the same initialization process as is performed when power comes up and requires tPU time.
RESET# may be asserted LOW at any time. To ensure data integrity, any operation that was interrupted by a
hardware reset should be reinitiated once the device is ready to accept a command sequence.
When RESET# is first asserted LOW, the device draws ICC1 (50 MHz value) during tPU. If RESET# continues to be
held at VSS, the device draws CMOS standby current (ISB).
RESET# has an internal pull-up resistor and may be left unconnected in the host system if not used.
The RESET# input is not available on all packages options. When not available, the RESET# input of the device is
tied to the inactive state, inside the package.
3.9
Serial Clock (SCK)
This input signal provides the synchronization reference for the SPI interface. Instructions, addresses, or data
input are latched on the rising edge of the SCK signal. Data output changes after the falling edge of SCK, in SDR
commands, and after every edge in DDR commands.
3.10
Chip Select (CS#)
The chip select signal indicates when a command for the device is in process and the other signals are relevant
for the memory device. When the CS# signal is at the logic HIGH state, the device is not selected and all input
signals are ignored and all output signals are high impedance. Unless an internal Program, Erase, or Write
Registers (WRR) embedded operation is in progress, the device will be in the Standby Power mode. Driving the
CS# input to logic LOW state enables the device, placing it in the Active Power mode. After Power-up, a falling
edge on CS# is required prior to the start of any command.
CS# toggle with no CLK and Data is considered as non-valid. The flash should not be selected (CS# LOW with no
CLK and Data) when it is not being addressed. This is considered as a spec violation and can eventually cause the
device to remain in busy state (SR1 = 0x03) after an embedded operation (program/erase/etc).
3.11
Serial Input (SI) / IO0
This input signal is used to transfer data serially into the device. It receives instructions, addresses, and data to
be programmed. Values are latched on the rising edge of serial SCK clock signal.
SI becomes IO0 - an input and output during Dual and Quad commands for receiving instructions, addresses, and
data to be programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on
the falling edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands).
Datasheet
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Pinouts and signal descriptions
3.12
Serial Output (SO) / IO1
This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of the
serial SCK clock signal.
SO becomes IO1 - an input and output during Dual and Quad commands for receiving addresses, and data to be
programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling
edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands).
3.13
Write Protect (WP#) / IO2
When WP# is driven LOW (VIL), during a WRR command and while the Status Register Write Disable (SRWD) bit of
the Status Register is set to a ‘1’, it is not possible to write to the Status and Configuration Registers. This prevents
any alteration of the Block Protect (BP2, BP1, BP0) and TBPROT bits of the Status Register. As a consequence, all
the data bytes in the memory area that are protected by the Block Protect and TBPROT bits, are also hardware
protected against data modification if WP# is LOW during a WRR command.
The WP# function is not available when the Quad mode is enabled (CR[1]=1). The WP# function is replaced by IO2
for input and output during Quad mode for receiving addresses, and data to be programmed (values are latched
on rising edge of the SCK signal) as well as shifting out data (on the falling edge of SCK, in SDR commands, and
on every edge of SCK, in DDR commands).
WP# has an internal pull-up resistor; when unconnected, WP# is at VIH and may be left unconnected in the host
system if not used for Quad mode.
3.14
Hold (HOLD#) / IO3
The Hold (HOLD#) signal is used to pause any serial communications with the device without deselecting the
device or stopping the serial clock.
To enter the Hold condition, the device must be selected by driving the CS# input to the logic LOW state. It is
recommended that the user keep the CS# input LOW state during the entire duration of the Hold condition. This
is to ensure that the state of the interface logic remains unchanged from the moment of entering the Hold
condition. If the CS# input is driven to the logic HIGH state while the device is in the Hold condition, the interface
logic of the device will be reset. To restart communication with the device, it is necessary to drive HOLD# to the
logic HIGH state while driving the CS# signal into the logic LOW state. This prevents the device from going back
into the Hold condition.
The Hold condition starts on the falling edge of the Hold (HOLD#) signal, provided that this coincides with SCK
being at the logic LOW state. If the falling edge does not coincide with the SCK signal being at the logic LOW state,
the Hold condition starts whenever the SCK signal reaches the logic LOW state. Taking the HOLD# signal to the
logic LOW state does not terminate any Write, Program or Erase operation that is currently in progress.
During the Hold condition, SO is in high impedance and both the SI and SCK input are Don't Care.
The Hold condition ends on the rising edge of the Hold (HOLD#) signal, provided that this coincides with the SCK
signal being at the logic LOW state. If the rising edge does not coincide with the SCK signal being at the logic LOW
state, the Hold condition ends whenever the SCK signal reaches the logic LOW state.
The HOLD# function is not available when the Quad mode is enabled (CR1[1] =1). The Hold function is replaced
by IO3 for input and output during Quad mode for receiving addresses, and data to be programmed (values are
latched on rising edge of the SCK signal) as well as shifting out data (on the falling edge of SCK, in SDR commands,
and on every edge of SCK, in DDR commands).
The HOLD# signal has an internal pull-up resistor and may be left unconnected in the host system if not used for
Quad mode.
Datasheet
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Pinouts and signal descriptions
CS#
SCK
HOLD#
Hold Condition
Standard Use
Hold Condition
Non-standard Use
SI_or_IO_(during_input)
SO_or_IO_(internal)
SO_or_IO_(external)
Valid Input
Don't Care
Valid Input
B C
Don't Care
Valid Input
D
A
B
C
D
E
E
A
B
Figure 5
HOLD mode operation
3.15
Core Voltage Supply (VCC)
VCC is the voltage source for all device internal logic. It is the single voltage used for all device internal functions
including read, program, and erase. The voltage may vary from 2.7 V to 3.6 V.
3.16
Versatile I/O Power Supply (VIO)
The Versatile I/O (VIO) supply is the voltage source for all device input receivers and output drivers and allows the
host system to set the voltage levels that the device tolerates on all inputs and drives on outputs (address,
control, and IO signals). The VIO range is 1.65 V to VCC. VIO cannot be greater than VCC
.
For example, a VIO of 1.65 V–3.6 V allows for I/O at the 1.8 V, 2.5 V, or 3 V levels, driving and receiving signals to and
from other 1.8 V, 2.5 V or 3 V devices on the same data bus. VIO may be tied to VCC so that interface signals operate
at the same voltage as the core of the device. VIO is not available in all package options, when not available the
VIO supply is tied to VCC internal to the package.
During the rise of power supplies, the VIO supply voltage must remain less than or equal to the VCC supply voltage.
This supply is not available in all package options. For a backward compatible with the SO16 package, the VIO
supply is tied to VCC inside the package; thus, the IO will function at VCC level.
3.17
Supply and Signal Ground (VSS)
VSS is the common voltage drain and ground reference for the device core, input signal receivers, and output
drivers.
3.18
Not Connected (NC)
No device internal signal is connected to the package connector nor is there any future plan to use the connector
for a signal. The connection may safely be used for routing space for a signal on a PCB. However, any signal
connected to an NC must not have voltage levels higher than VIO.
3.19
Reserved for Future Use (RFU)
No device internal signal is currently connected to the package connector but is there potential future use of the
connector. It is recommended to not use RFU connectors for PCB routing channels so that the PCB may take
advantage of future enhanced features in compatible footprint devices.
3.20
Do Not Use (DNU)
A device internal signal may be connected to the package connector. The connection may be used by Infineon
for test or other purposes and is not intended for connection to any host system signal. Any DNU signal related
function will be inactive when the signal is at VIL. The signal has an internal pull-down resistor and may be left
unconnected in the host system or may be tied to VSS. Do not use these connections for PCB signal routing
channels. Do not connect any host system signal to these connections.
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Pinouts and signal descriptions
3.21
Block diagrams
HOLD#
WP#
HOLD#
WP#
SI
SO
SI
SO
SCK
SCK
CS2#
CS2#
CS1#
CS1#
FL-S
Flash
FL-S
Flash
SPI
Bus Master
Figure 6
Bus master and memory devices on the SPI Bus - Single bit data path
HOLD#
HOLD#
WP#
IO1
IO0
SCK
WP#
IO1
IO0
SCK
CS2#
CS2#
CS1#
CS1#
FL-S
Flash
FL-S
Flash
SPI
Bus Master
Figure 7
Bus master and memory devices on the SPI Bus - Dual bit data path
IO3
IO2
IO3
IO2
IO1
IO1
IO0
IO0
SCK
SCK
CS2#
CS2#
CS1#
CS1#
FL-S
Flash
FL-S
Flash
SPI
Bus Master
Figure 8
Bus master and memory devices on the SPI Bus - Quad bit data path
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Signal protocols
4
Signal protocols
SPI clock modes
SDR
4.1
4.1.1
The S25FL128S and S25FL256S devices can be driven by an embedded microcontroller (bus master) in either of
the two following clocking modes.
• Mode 0 with Clock Polarity (CPOL) = 0 and, Clock Phase (CPHA) = 0
• Mode 3 with CPOL = 1 and, CPHA = 1
For these two modes, input data into the device is always latched in on the rising edge of the SCK signal and the
output data is always available from the falling edge of the SCK clock signal.
The difference between the two modes is the clock polarity when the bus master is in Standby mode and not
transferring any data.
• SCK will stay at logic LOW state with CPOL = 0, CPHA = 0
• SCK will stay at logic HIGH state with CPOL = 1, CPHA = 1
CPOL=0_CPHA=0_SCK
CPOL=1_CPHA=1_SCK
CS#
SI
MSb
SO
MSb
Figure 9
SPI SDR modes supported
Timing diagrams throughout the remainder of the document are generally shown as both mode ‘0’ and ‘3’ by
showing SCK as both HIGH and LOW at the fall of CS#. In some cases, a timing diagram may show only mode ‘0’
with SCK LOW at the fall of CS#. In such a case, mode 3 timing simply means clock is HIGH at the fall of CS# so no
SCK rising edge set up or hold time to the falling edge of CS# is needed for mode ‘3’.
SCK cycles are measured (counted) from one falling edge of SCK to the next falling edge of SCK. In mode ‘0’ the
beginning of the first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge of
SCK because SCK is already low at the beginning of a command.
4.1.2
DDR
Mode ‘0’ and mode ‘3’ are also supported for DDR commands. In DDR commands, the instruction bits are always
latched on the rising edge of clock, the same as in SDR commands. However, the address and input data that
follow the instruction are latched on both the rising and falling edges of SCK. The first address bit is latched on
the first rising edge of SCK following the falling edge at the end of the last instruction bit. The first bit of output
data is driven on the falling edge at the end of the last access latency (dummy) cycle.
SCK cycles are measured (counted) in the same way as in SDR commands, from one falling edge of SCK to the
next falling edge of SCK. In mode ‘0’ the beginning of the first SCK cycle in a command is measured from the falling
edge of CS# to the first falling edge of SCK because SCK is already low at the beginning of a command.
CPOL=0_CPHA=0_SCK
CPOL=1_CPHA=1_SCK
CS#
Instruction
Address
Mode
Dummy / DLP
Read Data
Transfer_Phase
SI
Inst. 7
Inst. 0
A31 A30
A0
M7
M6
M0
SO
DLP7
DLP0 D0
D1
Figure 10
SPI DDR modes supported
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Signal protocols
4.2
Command protocol
All communication between the host system and S25FL128S and S25FL256S memory devices is in the form of
units called commands.
All commands begin with an instruction that selects the type of information transfer or device operation to be
performed. Commands may also have an address, instruction modifier, latency period, data transfer to the
memory, or data transfer from the memory. All instruction, address, and data information is transferred serially
between the host system and memory device.
All instructions are transferred from host to memory as a single bit serial sequence on the SI signal.
Single bit wide commands may provide an address or data sent only on the SI signal. Data may be sent back to
the host serially on the SO signal.
Dual or Quad Output commands provide an address sent to the memory only on the SI signal. Data will be
returned to the host as a sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Dual or Quad Input/Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or,
four bit (nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1
or, four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Commands are structured as follows:
• Each command begins with CS# going LOW and ends with CS# returning HIGH. The memory device is selected
by the host driving the Chip Select (CS#) signal low throughout a command.
• The serial clock (SCK) marks the transfer of each bit or group of bits between the host and memory.
• Each command begins with an eight bit (byte) instruction. The instruction is always presented only as a single
bit serial sequence on the Serial Input (SI) signal with one bit transferred to the memory device on each SCK
rising edge. The instruction selects the type of information transfer or device operation to be performed.
• The instruction may be stand alone or may be followed by address bits to select a location within one of several
address spaces in the device. The instruction determines the address space used. The address may be either a
24-bit or a 32-bit byte boundary, address. The address transfers occur on SCK rising edge, in SDR commands,
or on every SCK edge, in DDR commands.
• The width of all transfers following the instruction are determined by the instruction sent. Following transfers
may continue to be single bit serial on only the SI or Serial Output (SO) signals, they may be done in two bit
groups per (dual) transfer on the IO0 and IO1 signals, or they may be done in 4 bit groups per (quad) transfer on
the IO0-IO3 signals. Within the dual or quad groups the least significant bit is on IO0. More significant bits are
placed in significance order on each higher numbered IO signal. Single bits or parallel bit groups are transferred
in most to least significant bit order.
• Some instructions send an instruction modifier called mode bits, following the address, to indicate that the
next command will be of the same type with an implied, rather than an explicit, instruction. The next command
thus does not provide an instruction byte, only a new address and mode bits. This reduces the time needed to
send each command when the same command type is repeated in a sequence of commands. The mode bit
transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands.
• The address or mode bits may be followed by write data to be stored in the memory device or by a read latency
period before read data is returned to the host.
• Write data bit transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands.
• SCK continues to toggle during any read access latency period. The latency may be ‘0’ to several SCK cycles
(also referred to as dummy cycles). At the end of the read latency cycles, the first read data bits are driven from
the outputs on SCK falling edge at the end of the last read latency cycle. The first read data bits are considered
transferred to the host on the following SCK rising edge. Each following transfer occurs on the next SCK rising
edge, in SDR commands, or on every SCK edge, in DDR commands.
• If the command returns read data to the host, the device continues sending data transfers until the host takes
the CS# signal HIGH. The CS# signal can be driven HIGH after any transfer in the read data sequence. This will
terminate the command.
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SPI Multi-I/O, 3.0V
Signal protocols
• At the end of a command that does not return data, the host drives the CS# input HIGH. The CS# signal must go
HIGH after the eighth bit, of a stand alone instruction or, of the last write data byte that is transferred. That is,
the CS# signal must be driven HIGH when the number of clock cycles after CS# signal was driven LOW is an exact
multiple of eight cycles. If the CS# signal does not go HIGH exactly at the eight SCK cycle boundary of the
instruction or write data, the command is rejected and not executed.
• All instruction, address, and mode bits are shifted into the device with the Most Significant Bits (MSb) first. The
data bits are shifted in and out of the device MSb first. All data is transferred in byte units with the lowest address
byte sent first. Following bytes of data are sent in lowest to highest byte address order i.e. the byte address
increments.
• All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations)
are ignored. The embedded operation will continue to execute without any affect. A very limited set of
commands are accepted during an embedded operation. These are discussed in the individual command
descriptions.
• Depending on the command, the time for execution varies. A command to read status information from an
executing command is available to determine when the command completes execution and whether the
command was successful.
4.2.1
Command sequence examples
CS#
SCK
SI
7
6
5
4
3
2
1
0
SO
Phase
Instruction
Figure 11
Standalone Instruction command
CS#
SCK
SI
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
SO
Phase
Instruction
Input Data
Figure 12
Single Bit Wide Input command
CS#
SCK
SI
7
6
5
4
3
2
1
0
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Phase
Instruction
Data 1
Data 2
Figure 13
Single Bit Wide Output command
Datasheet
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Signal protocols
CS#
SCK
SI
SO
7 6 5 4 3 2 1 0 31
1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Phase
Instruction
Address
Data 1
Data 2
Figure 14
Single Bit Wide I/O command without latency
CS#
SCK
SI
7 6 5 4 3 2 1 0 31
1 0
SO
7 6 5 4 3 2 1 0
Data 1
Phase
Instruction
Address
Dummy Cycles
Figure 15
Single Bit Wide I/O command with latency
CS#
SCK
IO0
IO1
7 6 5 4 3 2 1 0 31 30 29 0
6 4 2 0 6 4 2 0
7 5 3 1 7 5 3 1
Phase
Instruction
Address
6 Dummy
Data 1
Data 2
Figure 16
Dual Output command
CS#
SCK
IO0
7
6
5
4
3
2
1
0 31
1
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
4
5
6
7
IO1
5
6
7
1
2
3
IO2
IO3
Phase
Instruction
Address
Data 1 Data 2 Data 3 Data 4 Data 5 ...
Figure 17
Quad Output command without latency
CS#
SCK
IO0
7 6 5 4 3 2 1 0 30
31
2 0
3 1
6 4 2 0 6 4 2
7 5 3 1 7 5 3
0
1
IO1
Phase
Instruction
Address
Dummy
Data 1
Data 2
Figure 18
Dual I/O command
Datasheet
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001-98283 Rev. *S
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Signal protocols
CS#
SCK
IO0
IO1
7 6 5 4 3 2 1 0 28
4 0 4
5 1 5
4 0 4 0 4 0 4 0
5 1 5 1 5 1 5 1
6 2 6 2 6 2 6 2
7 3 7 3 7 3 7 3
D1 D2 D3 D4
29
IO2
30
6 2 6
IO3
31
7 3 7
Phase
Instruction
Address Mode Dummy
Figure 19
Quad I/O command
CS#
SCK
SI
7
6
5
4
3
2
1
0
3130 0 7 6 5 4 3 2 1 0
SO
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Phase
Instruction
Addess
Mode
Dummy
Data 1
Data 2
Figure 20
DDR Fast Read with EHPLC = 00b
CS#
SCK
IO0
7
6
5
4
3
2
1
0
30 28
31 29
0
1
6
7
4
5
2
3
0
7 6 5 4
7 6 5 4
3
3
2
2
1 0
1 0
6
7
4
5
2
3
0
1
6
7
IO1
1
Phase
Instruction
Address
Mode
Dum
DLP
Data 1
Figure 21
DDR Dual I/O Read with EHPLC = 01b and DLP
CS#
SCK
IO0
7
6
5
4
3
2
1
0
2824201612 8
2925211713 9
4
5
0 4
1 5
0
1
7 6
5
5
5
5
4 3
4 3
2
2
2
2
1 0
1 0
1 0
1 0
4
5
6
7
0 4
1 5
2 6
3 7
0
IO1
7 6
7 6
7 6
1
2
3
IO2
302622181410 6 2 6
312723191511 7 3 7
2
4 3
4 3
DLP
IO3
3
Phase
Instruction
Address
Dummy
D1 D2
Mode
Figure 22
DDR Quad I/O Read
Additional sequence diagrams, specific to each command, are provided in “Commands” on page 69.
Datasheet
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001-98283 Rev. *S
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Signal protocols
4.3
Interface states
This section describes the input and output signal levels as related to the SPI interface behavior.
Table 3
Interface states summary
HOLD#/ WP# / SO / SI /
Interface state
VCC
VIO
RESET# SCK CS#
IO3
X
IO2
X
IO1 IO0
Power-off
Low power hardware
data protection
< VCC (low)
< VCC
(cut-off)
VCC
VCC
X
X
X
X
X
X
Z
Z
X
X
X
X
Power-on (cold) reset
Hardware (warm) reset ≥ VCC (min) ≥ VIO (min) ≤ VCC
Interface Standby
Instruction cycle
Hold cycle
≥ VCC (min) ≥ VIO (min) ≤ VCC
X
X
X
X
X
X
HH
HL
X
X
X
HH
HL
X
X
X
HV
X
Z
Z
Z
Z
X
X
X
X
HV
X
HL
HH
HH
HH
≥ VCC (min) ≥ VIO (min) ≤ VCC
≥ VCC (min) ≥ VIO (min) ≤ VCC
≥ VCC (min) ≥ VIO (min) ≤ VCC
HT
HV or HL
HT
Single input cycle
≥ VCC (min) ≥ VIO (min) ≤ VCC
HH
HH
HH
HH
HH
HH
HH
HH
HH
HH
HH
HH
HH
HH
HH
HT
HT
HT
HT
HT
HT
HT
HT
HT
HT
HT
HT
HT
HT
HT
HL
HL
HL
HL
HL
HL
HL
HL
HL
HL
HL
HL
HL
HH
HH
HH
HH
HH
HH
X
X
X
Z
Z
HV
X
Host to Memory transfer
Single latency (dummy) ≥ VCC (min) ≥ VIO (min) ≤ VCC
cycle
Single output cycle
Memory to Host transfer
Dual input cycle
Host to Memory transfer
Dual latency (dummy)
cycle
Dual output cycle
Memory to Host transfer
QPP address input cycle ≥ VCC (min) ≥ VIO (min) ≤ VCC
Host to Memory transfer
Quad input cycle
Host to Memory transfer
Quad latency (dummy) ≥ VCC (min) ≥ VIO (min) ≤ VCC
cycle
Quad output cycle
Memory to Host transfer
DDR single input cycle
Host to Memory transfer
DDR dual input cycle
Host to Memory transfer
DDR Quad input cycle
Host to Memory transfer
DDR latency (dummy)
cycle
DDR single output cycle ≥ VCC (min) ≥ VIO (min) ≤ VCC
Memory to Host transfer
≥ VCC (min) ≥ VIO (min) ≤ VCC
≥ VCC (min) ≥ VIO (min) ≤ VCC
≥ VCC (min) ≥ VIO (min) ≤ VCC
≥ VCC (min) ≥ VIO (min) ≤ VCC
X
MV
HV
X
X
X
HV
X
X
X
MV
X
MV
HV
HV
X
X
≥ VCC (min) ≥ VIO (min) ≤ VCC
HV
X
HV
X
HV
X
≥ VCC (min) ≥ VIO (min) ≤ VCC
≥ VCC (min) ≥ VIO (min) ≤ VCC
≥ VCC (min) ≥ VIO (min) ≤ VCC
MV
X
MV
X
MV
X
MV
HV
HV
HV
X
X
HV
HV
≥ VCC (min)
≥ VIO (min)
≤ VCC
HV
HV
≥ VCC (min) ≥ VIO (min) ≤ VCC
HL MV or Z MV or MV or MV
Z
Z
Z
MV
or Z
X
HL
Z
Datasheet
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Signal protocols
Table 3
Interface states summary (continued)
VCC VIO
≥ VCC (min) ≥ VIO (min) ≤ VCC
HOLD#/ WP# / SO / SI /
Interface state
RESET# SCK CS#
IO3
IO2
IO1 IO0
DDR dual output cycle
Memory to Host transfer
HH
HH
HT
HT
HL
HL
Z
Z
MV
MV
MV
MV
DDR Quad output cycle ≥ VCC (min) ≥ VIO (min) ≤ VCC
Memory to Host transfer
MV
MV
Legend:
Z = No driver - floating signal
HL = Host driving VIL
HH = Host driving VIH
HV = Either HL or HH
X = HL or HH or Z
HT = Toggling between HL and HH
ML = Memory driving VIL
MH = Memory driving VIH
MV = Either ML or MH
4.3.1
Power-off
When the core supply voltage is at or below the VCC (low) voltage, the device is considered to be powered-off. The
device does not react to external signals, and is prevented from performing any program or erase operation.
4.3.2
Low power hardware data protection
When VCC is less than VCC (cut-off) the memory device will ignore commands to ensure that program and erase
operations can not start when the core supply voltage is out of the operating range.
4.3.3
Power-on (cold) reset
When the core voltage supply remains at or below the VCC (low) voltage for tPD time, then rises to VCC (Minimum)
the device will begin its Power-On Reset (POR) process. POR continues until the end of tPU. During tPU, the device
does not react to external input signals nor drive any outputs. Following the end of tPU, the device transitions to
the Interface Standby state and can accept commands. For additional information on POR, see “Power-on (cold)
reset” on page 38.
4.3.4
Hardware (warm) reset
Some of the device package options provide a RESET# input. When RESET# is driven LOW for tRP time, the device
starts the hardware reset process. The process continues for tRPH time. Following the end of both tRPH and the
reset hold time following the rise of RESET# (tRH) the device transitions to the Interface Standby state and can
accept commands. For additional information on hardware reset, see “POR followed by hardware reset” on
page 38.
4.3.5
Interface standby
When CS# is HIGH, the SPI interface is in Standby state. Inputs other than RESET# are ignored. The interface waits
for the beginning of a new command. The next interface state is Instruction Cycle when CS# goes LOW to begin a
new command.
While in interface Standby state, the memory device draws standby current (ISB) if no embedded algorithm is in
progress. If an embedded algorithm is in progress, the related current is drawn until the end of the algorithm
when the entire device returns to standby current draw.
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Signal protocols
4.3.6
Instruction cycle
When the host drives the MSb of an instruction and CS# goes LOW, on the next rising edge of SCK the device
captures the MSb of the instruction that begins the new command. On each following rising edge of SCK, the
device captures the next lower significance bit of the 8-bit instruction. The host keeps RESET# HIGH, CS# LOW,
HOLD# HIGH, and drives Write Protect (WP#) signal as needed for the instruction. However, WP# is only relevant
during instruction cycles of a WRR command and is otherwise ignored.
Each instruction selects the address space that is operated on and the transfer format used during the remainder
of the command. The transfer format may be Single, Dual output, Quad output, Dual I/O, Quad I/O, DDR Single
I/O, DDR Dual I/O, or DDR Quad I/O. The expected next interface state depends on the instruction received.
Some commands are standalone, needing no address or data transfer to or from the memory. The host returns
CS# HIGH after the rising edge of SCK for the eighth bit of the instruction in such commands. The next interface
state in this case is Interface Standby.
4.3.7
Hold
When Quad mode is not enabled (CR[1] = 0), the HOLD# / IO3 signal is used as the HOLD# input. The host keeps
RESET# HIGH, HOLD# LOW, SCK may be at a valid level or continue toggling, and CS# is LOW. When HOLD# is LOW
a command is paused, as though SCK were held LOW. SI / IO0 and SO / IO1 ignore the input level when acting as
inputs and are high impedance when acting as outputs during Hold state. Whether these signals are input or
output depends on the command and the point in the command sequence when HOLD# is asserted LOW.
When HOLD# returns HIGH, the next state is the same state the interface was in just before HOLD# was asserted
LOW.
When Quad mode is enabled, the HOLD# / IO3 signal is used as IO3.
During DDR commands, the HOLD# and WP# inputs are ignored.
4.3.8
Single input cycle - Host to Memory transfer
Several commands transfer information after the instruction on the single serial input (SI) signal from host to the
memory device. The dual output, and quad output commands send address to the memory using only SI but
return read data using the I/O signals. The host keeps RESET# HIGH, CS# LOW, HOLD# HIGH, and drives SI as
needed for the command. The memory does not drive the Serial Output (SO) signal.
The expected next interface state depends on the instruction. Some instructions continue sending address or
data to the memory using additional Single Input Cycles. Others may transition to Single Latency, or directly to
Single, Dual, or Quad Output.
4.3.9
Single latency (dummy) cycle
Read commands may have ‘0’ to several latency cycles during which read data is read from the main flash
memory array before transfer to the host. The number of latency cycles are determined by the Latency Code in
the configuration register (CR[7:6]). During the latency cycles, the host keeps RESET# HIGH, CS# LOW, and HOLD#
HIGH. The Write Protect (WP#) signal is ignored. The host may drive the SI signal during these cycles or the host
may leave SI floating. The memory does not use any data driven on SI / I/O0 or other I/O signals during the latency
cycles. In dual or quad read commands, the host must stop driving the I/O signals on the falling edge at the end
of the last latency cycle. It is recommended that the host stop driving I/O signals during latency cycles so that
there is sufficient time for the host drivers to turn off before the memory begins to drive at the end of the latency
cycles. This prevents driver conflict between host and memory when the signal direction changes. The memory
does not drive the Serial Output (SO) or I/O signals during the latency cycles.
The next interface state depends on the command structure i.e., the number of latency cycles, and whether the
read is single, dual, or quad width.
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Signal protocols
4.3.10
Single output cycle - Memory to Host transfer
Several commands transfer information back to the host on the single Serial Output (SO) signal. The host keeps
RESET# HIGH, CS# LOW, and HOLD# HIGH. The Write Protect (WP#) signal is ignored. The memory ignores the
Serial Input (SI) signal. The memory drives SO with data.
The next interface state continues to be Single Output Cycle until the host returns CS# to HIGH ending the
command.
4.3.11
Dual input cycle - Host to Memory transfer
The Read Dual I/O command transfers two address or mode bits to the memory in each cycle. The host keeps
RESET# HIGH, CS# LOW, HOLD# HIGH. The Write Protect (WP#) signal is ignored. The host drives address on
SI / IO0 and SO / IO1.
The next interface state following the delivery of address and mode bits is a Dual Latency Cycle if there are latency
cycles needed or Dual Output Cycle if no latency is required.
4.3.12
Dual latency (dummy) cycle
Read commands may have ‘0’ to several latency cycles during which read data is read from the main flash
memory array before transfer to the host. The number of latency cycles are determined by the Latency Code in
the Configuration Register (CR[7:6]). During the latency cycles, the host keeps RESET# HIGH, CS# LOW, and
HOLD# HIGH. The Write Protect (WP#) signal is ignored. The host may drive the SI / IO0 and SO / IO1 signals during
these cycles or the host may leave SI / IO0 and SO / IO1 floating. The memory does not use any data driven on
SI / IO0 and SO / IO1 during the latency cycles. The host must stop driving SI / IO0 and SO / IO1 on the falling edge
at the end of the last latency cycle. It is recommended that the host stop driving them during all latency cycles
so that there is sufficient time for the host drivers to turn off before the memory begins to drive at the end of the
latency cycles. This prevents driver conflict between host and memory when the signal direction changes. The
memory does not drive the SI / IO0 and SO / IO1 signals during the latency cycles.
The next interface state following the last latency cycle is a Dual Output Cycle.
4.3.13
Dual output cycle - Memory to Host transfer
The Read Dual Output and Read Dual I/O return data to the host two bits in each cycle. The host keeps RESET#
HIGH, CS# LOW, and HOLD# HIGH. The Write Protect (WP#) signal is ignored. The memory drives data on the
SI / IO0 and SO / IO1 signals during the dual output cycles.
The next interface state continues to be Dual Output Cycle until the host returns CS# to HIGH ending the
command.
4.3.14
QPP or QOR address input cycle
The Quad Page Program and Quad Output Read commands send address to the memory only on IO0. The other
IO signals are ignored because the device must be in Quad mode for these commands thus the Hold and Write
Protect features are not active. The host keeps RESET# HIGH, CS# LOW, and drives IO0.
For QPP the next interface state following the delivery of address is the Quad Input Cycle.
For QOR the next interface state following address is a Quad Latency Cycle if there are latency cycles needed or
Quad Output Cycle if no latency is required.
4.3.15
Quad input cycle - Host to Memory transfer
The Quad I/O Read command transfers four address or mode bits to the memory in each cycle. The Quad Page
Program command transfers four data bits to the memory in each cycle. The host keeps RESET# HIGH, CS# LOW,
and drives the IO signals.
For Quad I/O Read the next interface state following the delivery of address and mode bits is a Quad Latency Cycle
if there are latency cycles needed or Quad Output Cycle if no latency is required. For Quad Page Program the host
returns CS# HIGH following the delivery of data to be programmed and the interface returns to standby state.
Datasheet
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Signal protocols
4.3.16
Quad latency (dummy) cycle
Read commands may have ‘0’ to several latency cycles during which read data is read from the main flash
memory array before transfer to the host. The number of latency cycles are determined by the Latency Code in
the configuration register (CR[7:6]). During the latency cycles, the host keeps RESET# HIGH, CS# LOW. The host
may drive the IO signals during these cycles or the host may leave the IO floating. The memory does not use any
data driven on IO during the latency cycles. The host must stop driving the IO signals on the falling edge at the
end of the last latency cycle. It is recommended that the host stop driving them during all latency cycles so that
there is sufficient time for the host drivers to turn off before the memory begins to drive at the end of the latency
cycles. This prevents driver conflict between host and memory when the signal direction changes. The memory
does not drive the IO signals during the latency cycles.
The next interface state following the last latency cycle is a Quad Output Cycle.
4.3.17
Quad output cycle - Memory to Host transfer
The Quad Output Read and Quad I/O Read return data to the host four bits in each cycle. The host keeps RESET#
HIGH, and CS# LOW. The memory drives data on IO0-IO3 signals during the Quad output cycles.
The next interface state continues to be Quad Output Cycle until the host returns CS# to HIGH ending the
command.
4.3.18
DDR single input cycle - Host to Memory transfer
The DDR Fast Read command sends address, and mode bits to the memory only on the IO0 signal. One bit is
transferred on the rising edge of SCK and one bit on the falling edge in each cycle. The host keeps RESET# HIGH,
and CS# LOW. The other IO signals are ignored by the memory.
The next interface state following the delivery of address and mode bits is a DDR Latency Cycle.
4.3.19
DDR dual input cycle - Host to Memory transfer
The DDR Dual I/O Read command sends address, and mode bits to the memory only on the IO0 and IO1 signals.
Two bits are transferred on the rising edge of SCK and two bits on the falling edge in each cycle. The host keeps
RESET# HIGH, and CS# LOW. The IO2 and IO3 signals are ignored by the memory.
The next interface state following the delivery of address and mode bits is a DDR Latency Cycle.
4.3.20
DDR Quad input cycle - Host to Memory transfer
The DDR Quad I/O Read command sends address, and mode bits to the memory on all the IO signals. Four bits
are transferred on the rising edge of SCK and four bits on the falling edge in each cycle. The host keeps RESET#
HIGH, and CS# LOW.
The next interface state following the delivery of address and mode bits is a DDR Latency Cycle.
4.3.21
DDR latency cycle
DDR Read commands may have one to several latency cycles during which read data is read from the main flash
memory array before transfer to the host. The number of latency cycles are determined by the Latency Code in
the configuration register (CR[7:6]). During the latency cycles, the host keeps RESET# HIGH and CS# LOW. The
host may not drive the IO signals during these cycles. So that there is sufficient time for the host drivers to turn
off before the memory begins to drive. This prevents driver conflict between host and memory when the signal
direction changes. The memory has an option to drive all the IO signals with a Data Learning Pattern (DLP) during
the last 4 latency cycles. The DLP option should not be enabled when there are fewer than five latency cycles so
that there is at least one cycle of high impedance for turn around of the IO signals before the memory begins
driving the DLP. When there are more than 4 cycles of latency the memory does not drive the IO signals until the
last four cycles of latency.
The next interface state following the last latency cycle is a DDR Single, Dual, or Quad Output Cycle, depending
on the instruction.
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Signal protocols
4.3.22
DDR single output cycle - Memory to Host transfer
The DDR Fast Read command returns bits to the host only on the SO / IO1 signal. One bit is transferred on the
rising edge of SCK and one bit on the falling edge in each cycle. The host keeps RESET# HIGH, and CS# LOW. The
other IO signals are not driven by the memory.
The next interface state continues to be DDR Single Output Cycle until the host returns CS# to HIGH ending the
command.
4.3.23
DDR dual output cycle - Memory to Host transfer
The DDR Dual I/O Read command returns bits to the host only on the IO0 and IO1 signals. Two bits are transferred
on the rising edge of SCK and two bits on the falling edge in each cycle. The host keeps RESET# HIGH, and CS#
LOW. The IO2 and IO3 signals are not driven by the memory.
The next interface state continues to be DDR Dual Output Cycle until the host returns CS# to HIGH ending the
command.
4.3.24
DDR Quad output cycle - Memory to Host transfer
The DDR Quad I/O Read command returns bits to the host on all the IO signals. Four bits are transferred on the
rising edge of SCK and four bits on the falling edge in each cycle. The host keeps RESET# HIGH, and CS# LOW.
The next interface state continues to be DDR Quad Output Cycle until the host returns CS# to HIGH ending the
command.
4.4
Configuration Register effects on the interface
The configuration register bits 7 and 6 (CR1[7:6]) select the latency code for all read commands. The latency code
selects the number of mode bit and latency cycles for each type of instruction.
The configuration register bit 1 (CR1[1]) selects whether Quad mode is enabled to ignore HOLD# and WP# and
allow Quad Page Program, Quad Output Read, and Quad I/O Read commands. Quad mode must also be selected
to allow Read DDR Quad I/O commands.
4.5
Data protection
Some basic protection against unintended changes to stored data are provided and controlled purely by the
hardware design. These are described below.
4.5.1
Power-up
When the core supply voltage is at or below the VCC (low) voltage, the device is considered to be powered off. The
device does not react to external signals, and is prevented from performing any program or erase operation.
Program and erase operations continue to be prevented during the Power-on Reset (POR) because no command
is accepted until the exit from POR to the Interface Standby state.
4.5.2
Low power
When VCC is less than VCC (cut-off) the memory device will ignore commands to ensure that program and erase
operations can not start when the core supply voltage is out of the operating range.
4.5.3
Clock pulse count
The device verifies that all program, erase, and Write Registers (WRR) commands consist of a clock pulse count
that is a multiple of eight before executing them. A command not having a multiple of 8 clock pulse count is
ignored and no error status is set for the command.
Datasheet
30
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Electrical specifications
5
Electrical specifications
5.1
Absolute maximum ratings
Table 4
Absolute maximum ratings
–65°C to +150°C
–65°C to +125°C
–0.5 V to +4.0 V
–0.5 V to +4.0 V
–0.5 V to +(VIO + 0.5 V)
100 mA
Storage temperature plastic packages
Ambient temperature with power applied
VCC
[10]
VIO
[11]
Input voltage with respect to ground (VSS
Output short circuit current[12]
Notes
)
10. VIO must always be less than or equal VCC + 200 mV.
11. See “Input signal overshoot” on page 32 for allowed maximums during signal transition.
12. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be
greater than one second.
13. Stresses above those listed under Table 4 may cause permanent damage to the device. This is a stress rating
only; functional operation of the device at these or any other conditions above those indicated in the op-
erational sections of this datasheet is not implied. Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
5.2
Thermal resistance
Table 5
Thermal resistance
Parameter
Theta JA
Description
Test condition
Device SO3016 FAB024 FAC024 WNG008 Unit
Thermal resistance Test conditions
(Junction to
ambient)
Thermal resistance
(Junction to board)
128
256
38
37
36
38
36
38
28
27
°C/W
follow standard test
methods and proce-
dures for measuring
thermal impedance
in accordance with
EIA/JESD51. with
Still Air (0 m/s).
Theta JB
Theta JC
128
256
128
256
19.7
18.7
10.9
9.5
19
18
11.2
13.7
19
18
11.2
13.7
7.8
°C/W
°C/W
11.7
12.6
13.1
Thermal resistance
(Junction to case)
Datasheet
31
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Electrical specifications
5.3
Operating ranges
Operating ranges define those limits between which the functionality of the device is guaranteed.
5.3.1
Power supply voltages
Some package options provide access to a separate input and output buffer power supply called VIO. Packages
which do not provide the separate VIO connection, internally connect the device VIO to VCC. For these packages,
the references to VIO are also references to VCC
.
VCC
VIO
2.7 V to 3.6 V
1.65 V to VCC +200 mV
5.3.2
Temperature ranges
Table 6
Temperature ranges
Spec
Min
–40
–40
–40
–40
–40
–40
Parameter
Symbol
Device
Unit
Max
+85
+105
+125
+85
Ambient temperature
TA
Industrial (I)
Industrial Plus (V)
Extended (N)
°C
Automotive, AEC-Q100 grade 3 (A)
Automotive, AEC-Q100 grade 2 (B)
Automotive AEC-Q100 grade 1 (M)
+105
+125
Note
14. Industrial Plus operating and performance parameters will be determined by device characterization and
may vary from standard industrial temperature range devices as currently shown in this specification.
5.3.3
Input signal overshoot
During DC conditions, input or I/O signals should remain equal to or between VSS and VIO. During voltage transi-
tions, inputs or I/Os may overshoot VSS to –2.0V or overshoot to VIO +2.0V, for periods up to 20 ns.
20 ns
20 ns
VIL
- 2.0 V
20 ns
Figure 23
Maximum negative overshoot waveform
20 ns
VIO + 2.0 V
VIH
20 ns
20 ns
Figure 24
Maximum positive overshoot waveform
Datasheet
32
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Electrical specifications
5.4
Power-up and power-down
The device must not be selected at power-up or power-down (that is, CS# must follow the voltage applied on VCC
until VCC reaches the correct value as follows:
)
• VCC (min) at power-up, and then for a further delay of tPU
• VSS at power-down
A simple pull-up resistor (generally of the order of 100 k) on Chip Select (CS#) can usually be used to insure safe
and proper power-up and power-down.
The device ignores all instructions until a time delay of tPU has elapsed after the moment that VCC rises above the
minimum VCC threshold. See Figure 25. However, correct operation of the device is not guaranteed if VCC returns
below VCC (min) during tPU. No command should be sent to the device until the end of tPU
.
After power-up (tPU), the device is in Standby mode (not Deep Power Down mode), draws CMOS standby current
(ISB), and the WEL bit is reset.
During power-down or voltage drops below VCC (cut-off), the voltage must drop below VCC (low) for a period of
tPD for the part to initialize correctly on power-up. See Figure 26. If during a voltage drop the VCC stays above VCC
(cut-off) the part will stay initialized and will work correctly when VCC is again above VCC (min). In the event
Power-on Reset (POR) did not complete correctly after power up, the assertion of the RESET# signal or receiving
a software reset command (RESET) will restart the POR process.
Normal precautions must be taken for supply rail decoupling to stabilize the VCC supply at the device. Each device
in a system should have the VCC rail decoupled by a suitable capacitor close to the package supply connection
(this capacitor is generally of the order of 0.1 µf).
Table 7
Symbol
CC (min)
CC (cut-off)
Power-up / power-down voltage and timing
Parameter
VCC (Minimum operation voltage)
VCC (Cut-off where re-initialization is needed)
VCC (Low voltage for initialization to occur)
VCC (Low voltage for initialization to occur at embedded)
Min
2.7
2.4
1.6
2.3
Max
Unit
V
–
–
–
V
V
V
V
VCC (low)
tPU
tPD
VCC (min) to read operation
VCC (low) time
–
15.0
300
–
µs
µs
VCC
(max)
VCC
(min)
VCC
tPU
Full Device Access
Time
Figure 25
Power-up
Datasheet
33
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Electrical specifications
VCC
(max)
VCC
No Device Access Allowed
(min)
VCC
tPU
Device Access
Allowed
(cut-off)
VCC
(low)
VCC
tPD
Time
Figure 26
Power-down and voltage drop
5.5
DC characteristics
Applicable within operating ranges.
Table 8 DC Characteristics — Operating temperature range –40°C to +85°C
Symbol
Parameter
Input low voltage
Input high voltage
Test conditions
Min
–0.5
0.7 VIO
–
Typ[15]
Max
Unit
VIL
VIH
VOL
–
–
–
0.2 x VIO
VIO+0.4
0.15VIO
V
V
V
Output low
voltage
Output high
voltage
IOL = 1.6 mA, VCC = VCC min
IOH = –0.1 mA
VOH
ILI
0.85
VIO
–
–
–
–
V
Input leakage
current
Output leakage
current
VCC = VCC Max, VIN = VIH or VIL
VCC = VCC Max, VIN = VIH or VIL
–
–
–
±2
±2
µA
µA
mA
ILO
ICC1
Active power
supply current
(READ)
Serial SDR@50 MHz
Serial SDR@133 MHz
Quad SDR@80 MHz
Quad SDR@104 MHz
Quad DDR@66 MHz
Quad DDR@80 MHz
Outputs unconnected during read
data return[16]
16
33
50
61
75
90
ICC2
ICC3
ICC4
Active power
CS# = VIO
CS# = VIO
CS# = VIO
–
–
–
–
–
–
100
100
100
mA
mA
mA
supply current
(Page program)
Active power
supply current
(WRR)
Active power
supply current
(SE)
Notes
15. Typical values are at TAI = 25°C and VCC = VIO = 3 V.
16. Output switching current is not included.
Datasheet
34
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Electrical specifications
Table 8
Symbol
DC Characteristics — Operating temperature range –40°C to +85°C (continued)
Parameter
Test conditions
Min
Typ[15]
Max
Unit
ICC5
Active power
supply current
(BE)
CS# = VIO
–
–
100
mA
ISB
(Industrial)
Standby current
RESET#, CS# = VIO; SI, SCK = VIO or VSS
Industrial temperature
,
–
70
100
µA
Notes
15. Typical values are at TAI = 25°C and VCC = VIO = 3 V.
16. Output switching current is not included.
Table 9
Symbol
DC characteristics — Operating temperature range -40°C to +105°C and -40°C to +125°C
Parameter
Input low voltage
Input high voltage
Output low
voltage
Output high
voltage
Test Conditions
Min
–0.5
0.7 VIO
Typ[17]
Max
Unit
VIL
VIH
VOL
–
–
–
0.2 x VIO
VIO+0.4
0.15xVIO
V
V
V
IOL = 1.6 mA, VCC = VCC min
IOH = –0.1 mA
VOH
ILI
0.85
VIO
–
–
–
–
V
Input leakage
current
Output leakage
current
Active power
supply current
(READ)
VCC = VCC Max, VIN = VIH or VIL
VCC = VCC Max, VIN = VIH or VIL
–
–
–
±2
±2
µA
µA
mA
ILO
ICC1
Serial SDR@50 MHz
Serial SDR@133 MHz
Quad SDR@80 MHz
Quad SDR@104 MHz
Quad DDR@66 MHz
Quad DDR@80 MHz
Outputs unconnected during read
data return[18]
22
35
50
61
75
90
ICC2
ICC3
ICC4
ICC5
ISB
Active power
CS# = VIO
CS# = VIO
CS# = VIO
CS# = VIO
–
–
–
–
–
–
–
100
100
100
100
300
mA
mA
mA
mA
µA
supply current
(Page program)
Active power
supply current
(WRR)
Active power
supply current
(SE)
Active power
supply current
(BE)
Standby current RESET#, CS# = VIO; SI, SCK = VIO or
VSS
–
–
70
Notes
17. Typical values are at TAI = 25°C and VCC = VIO = 3 V.
18. Output switching current is not included.
Datasheet
35
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Electrical specifications
5.5.1
Active power and standby power modes
The device is enabled and in the Active Power mode when Chip Select (CS#) is LOW. When CS# is HIGH, the device
is disabled, but may still be in an Active Power mode until all program, erase, and write operations have
completed. The device then goes into the Standby Power mode, and power consumption drops to ISB
.
Datasheet
36
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Timing specifications
6
Timing specifications
6.1
Key to switching waveforms
Input
Symbol
Output
Valid at logic high or low
High Impedance
Any change permitted
Logic high Logic low
Valid at logic high or low
High Impedance Changing, state unknown Logic high Logic low
Figure 27
Waveform element meanings
Input Levels
Output Levels
0.85 x VIO
VIO + 0.4V
0.7 x VIO
Timing Reference Level
0.5 x VIO
0.2 x VIO
- 0.5V
0.15 x VIO
Figure 28
Input, output, and timing reference levels
6.2
AC test conditions
Device
Under
Test
C
L
Figure 29
Table 10
Test setup
AC measurement conditions
Parameter
Symbol
CL
Min
Max
Unit
Load capacitance
30
pF
15[22]
Input rise and fall times
Input pulse voltage
Input timing ref voltage
Output timing ref voltage
–
2.4
ns
V
V
0.2 x VIO to 0.8 VIO
0.5 VIO
0.5 VIO
V
Notes
19. Output High-Z is defined as the point where data is no longer driven.
20. Input slew rate: 1.5 V/ns.
21. AC characteristics tables assume clock and data signals have the same slew rate (slope).
22. DDR operation.
Datasheet
37
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Timing specifications
6.2.1
Capacitance characteristics
Table 11
Capacitance
Parameter
Test conditions
Min
Max
Unit
CIN
COUT
Input capacitance (applies to SCK, CS#,
RESET#)
Output capacitance (applies to All I/O)
1 MHz
–
8
pF
1 MHz
–
8
pF
Note
23. For more information on capacitance, please contact the IBIS models.
6.3
6.3.1
Reset
Power-on (cold) reset
The device executes a Power-On Reset (POR) process until a time delay of tPU has elapsed after the moment that
VCC rises above the minimum VCC threshold. See Figure 25, Table 7, and Table 12. The device must not be
selected (CS# to go HIGH with VIO) during power-up (tPU), i.e. no commands may be sent to the device until the
end of tPU. RESET# is ignored during POR. If RESET# is LOW during POR and remains low through and beyond the
end of tPU, CS# must remain HIGH until tRH after RESET# returns HIGH. RESET# must return HIGH for greater than
tRS before returning low to initiate a hardware reset.
VCC
VIO
tPU
RESET#
If RESET# is low at tPU end
CS# must be high at tPU end
tRH
CS#
Figure 30
Reset LOW at the end of POR
VCC
VIO
tPU
tPU
RESET#
CS#
If RESET# is high at tPU end
CS# may stay high or go low at tPU end
Figure 31
Reset HIGH at the end of POR
VCC
VIO
tPU
tPU
tRS
RESET#
CS#
Figure 32
POR followed by hardware reset
Datasheet
38
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Timing specifications
6.3.2
Hardware (warm) reset
When the RESET# input transitions from VIH to VIL the device will reset register states in the same manner as
power-on reset but, does not go through the full reset process that is performed during POR. The hardware reset
process requires a period of tRPH to complete. If the POR process did not complete correctly for any reason during
power-up (tPU), RESET# going LOW will initiate the full POR process instead of the hardware reset process and
will require tPU to complete the POR process.
The RESET# input provides a hardware method of resetting the flash memory device to standby state.
• RESET# must be HIGH for tRS following tPU or tRPH, before going low again to initiate a hardware reset.
• When RESET# is driven low for at least a minimum period of time (tRP), the device terminates any operation in
progress, tri-states all outputs, and ignores all read/write commands for the duration of tRPH. The device resets
the interface to standby state.
• If CS# is LOW at the time RESET# is asserted, CS# must return HIGH during tRPH before it can be asserted low
again after tRH
.
• Hardware Reset is only offered in 16-lead SOIC and BGA packages.
tRP
RESET#
Any prior reset
tRPH
tRH
tRH
tRS
tRPH
CS#
Figure 33
Hardware reset
Table 12
Parameter
Hardware reset parameters[24, 25]
Description
Limit
Time
Unit
tRS
Reset setup - Prior reset end and RESET# HIGH
before RESET# LOW
Min
50
ns
tRPH
tRP
tRH
Reset pulse hold - RESET# LOW to CS# LOW
RESET# pulse width
Reset hold - RESET# HIGH before CS# LOW
Min
Min
Min
35
200
50
µs
ns
ns
Notes
24. RESET# LOW is optional and ignored during power-up (tPU). If Reset# is asserted LOW during the end of tPU
the device will remain in the reset state and tRH will determine when CS# may go LOW.
25. Sum of tRP and tRH must be equal to or greater than tRPH.
,
Datasheet
39
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Timing specifications
6.4
SDR AC characteristics
Table 13
Symbol
FSCK, R
AC characteristics (Single die package, VIO = VCC 2.7 V to 3.6 V)
Parameter
Min
Typ
Max
50
Unit
MHz
SCK clock frequency for READ and 4READ
instructions
DC
–
FSCK, C
FSCK, C
SCK clock frequency for single commands
DC
DC
–
–
133
104
MHz
MHz
as shown in Table 48[29]
SCK clock frequency for the following dual
and Quad commands: DOR, 4DOR, QOR,
4QOR, DIOR, 4DIOR, QIOR, 4QIOR
FSCK, QPP SCK clock frequency for the QPP, 4QPP
commands
DC
–
80
MHz
PSCK
WH, tCH Clock high time[30]
WL, tCL Clock low time[30]
CRT, tCLCH Clock rise time (slew rate)
CFT, tCHCL Clock fall time (slew rate)
SCK clock period
1/ FSCK
45% PSCK
45% PSCK
0.1
–
–
–
–
–
–
–
–
–
–
t
t
ns
ns
V/ns
V/ns
ns
t
t
0.1
10
50
tCS
CS# high time (Read instructions)
CS# high time (Program/erase)
–
tCSS
tCSH
tSU
tHD
tV
CS# active setup time (relative to SCK)
CS# active hold time (relative to SCK)
Data in setup time
Data in hold time
Clock low to output valid
3
3
1.5
2
–
–
–
–
–
–
ns
ns
ns
ns
ns
–
3000[31]
–
8.0[27]
7.65[28]
6.5[29]
–
tHO
tDIS
Output hold time
Output disable time
WP# setup time
WP# hold time
HOLD# active setup time (relative to SCK)
HOLD# active hold time (relative to SCK)
HOLD# non active setup time (relative to
SCK)
2
0
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
8
–
–
–
–
–
tWPS
tWPH
tHLCH
tCHHH
tHHCH
20[26]
100[26]
3
3
3
tCHHL
HOLD# non active hold time (relative to
SCK)
3
–
–
ns
tHZ
tLZ
HOLD# enable to output Invalid
HOLD# disable to output Valid
–
–
–
–
8
8
ns
ns
Notes
26. Only applicable as a constraint for WRR instruction when SRWD is set to a ‘1’.
27. Full VCC range (2.7–3.6 V) and CL = 30 pF.
28. Regulated VCC range (3.0–3.6 V) and CL = 30 pF.
29. Regulated VCC range (3.0–3.6 V) and CL = 15 pF.
30. ±10% duty cycle is supported for frequencies 50MHz.
31. Maximum value only applies during Program/Erase Suspend/Resume commands.
Datasheet
40
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Timing specifications
Table 14
Symbol
FSCK, R
AC characteristics (Single die package, VIO 1.65 V to 2.7 V, VCC 2.7 V to 3.6 V)
Parameter
Min
Typ
Max
Unit
MHz
SCK clock frequency for READ, 4READ
instructions
DC
–
50
FSCK, C
PSCK
SCK clock frequency for all others[34]
SCK clock period
DC
1/ FSCK
45% PSCK
45% PSCK
0.1
–
–
–
–
–
–
–
66
–
–
–
MHz
t
WH, tCH Clock high time[35]
tWL, tCL Clock low time[35]
ns
ns
V/ns
V/ns
ns
t
t
CRT, tCLCH Clock rise time (slew rate)
CFT, tCHCL Clock fall time (slew rate)
0.1
10
50
–
–
tCS
CS# high time (Read instructions)
CS# high time (Program/erase)
tCSS
tCSH
tSU
tHD
tV
CS# active setup time (relative to SCK)
CS# active hold time (relative to SCK)
Data in setup time
Data in hold time
Clock low to output valid
10
3
5
4
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
–
3000[36]
–
14.5[33]
12.0[34]
tHO
tDIS
Output hold time
Output disable time
WP# setup time
WP# hold time
HOLD# active setup time (relative to SCK)
HOLD# active hold time (relative to SCK)
HOLD# non active setup time (relative to
SCK)
2
0
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
14
–
–
–
–
tWPS
tWPH
tHLCH
tCHHH
tHHCH
20[32]
100[32]
5
5
5
–
tCHHL
HOLD# non active hold time (relative to
SCK)
5
–
–
ns
tHZ
tLZ
HOLD# enable to output invalid
HOLD# disable to output valid
–
–
–
–
14
14
ns
ns
Notes
32. Only applicable as a constraint for WRR instruction when SRWD is set to a ‘1’.
33. CL = 30 pF.
34. CL = 15 pF.
35. ±10% duty cycle is supported for frequencies 50 MHz.
36. Maximum value only applies during Program/Erase Suspend/Resume commands.
Datasheet
41
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Timing specifications
6.4.1
Clock timing
PSCK
tCH
tCL
VIH min
VIO / 2
VIL max
tCFT
tCRT
Figure 34
Clock timing
6.4.2
Input / output timing
tCS
CS#
SCK
tCSH
tCSH
tCSS
tCSS
tSU
tHD
SI
MSb IN
LSb IN
SO
Figure 35
SPI single bit input timing
tCS
CS#
SCK
SI
tLZ
tHO
tV
tDIS
SO
MSb OUT
LSb OUT
Figure 36
SPI single bit output timing
Datasheet
42
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Timing specifications
tCS
CS#
tCSS
tCSH
tCSS
SCK
tSU
tHD
tLZ
tHO
tV
tDIS
MSB IN
LSB IN
.
MSB OUT
.
LSB OUT
IO
Figure 37
SPI SDR MIO timing
CS#
SCK
tHLCH
tCHHL
tHHCH
tHLCH
tCHHL
tHHCH
tCHHH
tCHHH
HOLD#
Hold Condition
Standard Use
Hold Condition
Non-standard Use
SI_or_IO_(during_input)
tHZ
tLZ
B
tHZ
tLZ
SO_or_IO_(during_output)
A
B
C
D
E
Figure 38
Hold timing
CS#
tWPS
tWPH
WP#
SCK
SI
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
SO
Phase
WRR Instruction
Input Data
Figure 39
WP# input timing
Datasheet
43
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Timing specifications
6.5
DDR AC characteristics
Table 15
AC characteristics — DDR operation
66 MHz
Typ
–
80 MHz
Typ
–
Symbol
Parameter
Min
Unit
Max
66
Min
DC
Max
80
FSCK, R SCK clock frequency for DDR
READ instruction
DC
MHz
PSCK, R SCK clock period for DDR READ
instruction
15
–
12.5
–
ns
tWH, tCH Clock high time
45% PSCK
45% PSCK
–
–
–
–
–
–
–
–
45% PSCK
45% PSCK
–
–
–
–
–
–
–
–
ns
ns
ns
ns
t
WL, tCL Clock low time
tCS
CS# high time (Read instructions)
10
3
10
3
tCSS
CS# active setup time (relative to
SCK)
tCSH
CS# active hold time (relative to
SCK)
IO in setup time
IO in hold time
Clock low to output valid
Output hold time
3
–
–
3
–
–
ns
tSU
tHD
tV
tHO
tDIS
tLZ
2
2
–
1.5
–
0
–
–
–
–
–
–
–
3000[38]
–
6.5[37]
1.5
1.5
–
1.5
–
–
–
–
–
–
–
–
3000[38]
ns
ns
ns
ns
ns
ns
ps
–
6.5[37]
–
8
8
600
Output disable time
Clock to output low impedance
8
8
600
0
–
tO_SKEW First output to last output data
valid time
–
Notes
37. Regulated VCC range (3.0–3.6 V) and CL = 15 pF.
38. Maximum value only applies during Program/Erase Suspend/Resume commands.
6.5.1
DDR input timing
tCS
CS#
tCSH
tCSH
tCSS
tCSS
SCK
tHD
tSU
tHD
tSU
SI_or_IO
SO
MSb IN
LSb IN
Figure 40
SPI DDR input timing
Datasheet
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Timing specifications
6.5.2
DDR output timing
tCS
CS#
SCK
SI
tLZ
tV
tV
tDIS
tHO
SO_or_IO
MSb
LSb
Figure 41
SPI DDR output timing
6.5.3
DDR data valid timing using DLP
pSCK
tCL
tCH
SCK
tIO_SKEW
tV
tOTT
IO Slow
IO Fast
S.
Slow D1
Slow D2
tV
Fast D1
Fast D2
tV_min
tHO
tDV
D1
IO_valid
D2
Figure 42
SPI DDR data valid window
Datasheet
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Timing specifications
The minimum data valid window (tDV) and tV minimum can be calculated as follows:
[40]
tDV[42] = Minimum half clock cycle time (tCLH
tV _min = tHO + tIO_SKEW + tOTT
)
[39] - tOTT[41] - tIO_SKEW
Example:
80 MHz clock frequency = 12.5 ns clock period, DDR operations and duty cycle of 45% or higher
CLH = 0.45 x PSCK = 0.45 x 12.5 ns = 5.625 ns
t
Bus impedance of 45 ohm and capacitance of 22 pf, with timing reference of 0.75 VCC, the rise time from ‘0’ to ‘1’
or fall time ‘1’ to ‘0’ is 1.4[44] x RC time constant (Tau)[43] = 1.4 x 0.99 ns = 1.39 ns
t
OTT = rise time or fall time = 1.39 ns.
Data Valid Window
DV = tCLH - tIO_SKEW - tOTT = 5.625 ns - 600 ps - 1.39 ns = 3.635 ns
t
tV Minimum
tV _min = tHO + tIO_SKEW + tOTT = 1.0 ns + 600 ps + 1.39 ns = 2.99 ns
Notes
39. tCLH is the shorter duration of tCL or tCH
.
40. tIO_SKEW is the maximum difference (delta) between the minimum and maximum tV (output valid) across
all IO signals.
41. tOTT is the maximum Output Transition Time from one valid data value to the next valid data value on
each IO. tOTT is dependent on system level considerations including:
a. Memory device output impedance (drive strength).
b. System level parasitics on the IOs (primarily bus capacitance).
c. Host memory controller input VIH and VIL levels at which ‘0’ to 1 and 1 to ‘0’ transitions are recognized.
d.tOTT is not a specification tested by Infineon, it is system dependent and must be derived by the system
designer based on the above considerations.
42. tDV is the data valid window.
43. Tau = R (Output Impedance) x C (Load capacitance).
44. Multiplier of Tau time for voltage to rise to 75% of VCC
.
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Address space maps
7
Address space maps
Overview
7.1
7.1.1
Extended address
The S25FL128S and S25FL256S devices support 32-bit addresses to enable higher density devices than allowed
by previous generation (legacy) SPI devices that supported only 24-bit addresses. A 24-bit byte resolution address
can access only 16 MB (128 Mb) of maximum density. A 32-bit byte resolution address allows direct addressing of
up to a 4 GB (32 Gb) of address space.
Legacy commands continue to support 24-bit addresses for backward software compatibility. Extended 32-bit
addresses are enabled in three ways:
• Bank address register — a software (command) loadable internal register that supplies the high order bits of
address when legacy 24-bit addresses are in use.
• Extended address mode — a bank address register bit that changes all legacy commands to expect 32-bits of
address supplied from the host system.
• New commands — that perform both legacy and new functions, which expect 32-bit address.
The default condition at power-up and after reset, is the Bank address register loaded with zeros and the
extended address mode set for 24-bit addresses. This enables legacy software compatible access to the first
128 Mb of a device.
The S25FL128S device supports the extended address features in the same way but in essence ignores bits 31 to
24 of any address because the main flash array only needs 24 bits of address. This enables simple migration from
the 128-Mb density to higher density devices without changing the address handling aspects of software.
7.1.2
Multiple address spaces
Many commands operate on the main flash memory array. Some commands operate on address spaces separate
from the main flash array. Each separate address space uses the full 32-bit address but may only define a small
portion of the available address space.
7.2
Flash memory array
The main flash array is divided into erase units called sectors. The sectors are organized either as a hybrid combi-
nation of 4-KB and 64-KB sectors, or as uniform 256-KB sectors. The sector organization depends on the device
model selected, see “Ordering information” on page 154.
Table 16
S25FL256S sector and memory address map, bottom 4-KB sectors
Address range
Sector size (KB)
Sector count
Sector range
Notes
(Byte address)
4
32
SA00
00000000h-00000FF
Fh
Sector starting
address
—
:
:
Sector ending
address
SA31
0001F000h-0001FFF
Fh
64
510
SA32
00020000h-0002FFF
Fh
:
:
SA541
01FF0000h-01FFFFF
Fh
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Address space maps
Table 17
S25FL256S sector and memory address map, top 4-KB sectors
Address range
(Byte address)
Sector size (KB)
Sector count
Sector range
Notes
64
4
510
SA00
:
SA509
0000000h-000FFFFh
:
01FD0000h-01FDFFF
Fh
01FE0000h-01FE0FF
Fh
Sector starting
address —
Sector ending
address
32
SA510
:
:
SA541
01FFF000h-01FFFFF
Fh
Table 18
S25FL256S sector and memory address map, uniform 256-KB sectors
Address range
Sector size (KB)
Sector count
Sector range
Notes
(8-bit)
0000000h-003FFFFh
:
256
128
SA00
:
Sector starting
address
—
SA127
1FC0000h-1FFFFFFh
Sector ending
address
Table 19
S25FL128S sector and memory address map, bottom 4-KB sectors
Address range
Sector size (KB)
Sector count
Sector range
Notes
(Byte address)
4
32
SA00
00000000h-00000FF
Fh
Sector starting
address
—
:
:
Sector ending
address
SA31
0001F000h-0001FFF
Fh
64
254
SA32
00020000h-0002FFF
Fh
:
:
SA285
00FF0000h-00FFFFF
Fh
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Address space maps
Table 20
S25FL128S sector and memory address map, top 4-KB sectors
Address range
(Byte address)
Sector size (KB)
Sector count
Sector range
Notes
64
4
254
SA00
:
SA253
0000000h-000FFFFh
:
00FD0000h-00FDFFF
Fh
00FE0000h-00FE0FF
Fh
Sector starting
address
—
Sector ending
address
32
SA254
:
:
SA285
00FFF000h-00FFFFF
Fh
Table 21
S25FL128S sector and memory address map, uniform 256-KB sectors
Address range
Sector size (KB)
Sector count
Sector range
Notes
(Byte address)
0000000h-003FFFFh
:
256
64
SA00
:
Sector starting
address
—
SA63
0FC0000h-0FFFFFFh
Sector ending
address
Note: These are condensed tables that use a couple of sectors as references. here are address ranges that are not
explicitly listed. All 256 KB sectors have the pattern XXX0000h-XXXFFFFh.
7.3
ID-CFI address space
The RDID command (9Fh) reads information from a separate flash memory address space for device identifi-
cation (ID) and Common Flash Interface (CFI) information. See “Device ID and common flash interface (ID-CFI)
address map” on page 129 for the tables defining the contents of the ID-CFI address space. The ID-CFI address
space is programmed by Infineon and read-only for the host system.
7.4
OTP address space
Each S25FL128S and S25FL256S memory device has a 1024-byte One Time Program (OTP) address space that is
separate from the main flash array. The OTP area is divided into 32, individually lockable, 32-byte aligned and
length regions.
In the 32-byte region starting at address ‘0’:
• The 16 lowest address bytes are programmed by Infineon with a 128-bit random number. Only Infineon is able
to program these bytes.
• The next 4 higher address bytes (OTP Lock Bytes) are used to provide one bit per OTP region to permanently
protect each
• region from programming. The bytes are erased when shipped from Infineon. After an OTP region is
programmed, it can be locked to prevent further programming, by programming the related protection bit in
the OTP Lock Bytes.
• The next higher 12-bytes of the lowest address region are Reserved for Future Use (RFU). The bits in these RFU
bytes may be programmed by the host system but it must be understood that a future device may use those
bits for protection of a larger OTP space. The bytes are erased when shipped from Infineon.
The remaining regions are erased when shipped from Infineon, and are available for programming of additional
permanent data.
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Address space maps
See Figure 43 for a pictorial representation of the OTP memory space.
The OTP memory space is intended for increased system security. OTP values, such as the random number
programmed by Infineon, can be used to “mate” a flash component with the system CPU/ASIC to prevent device
substitution.
The configuration register FREEZE (CR1[0]) bit protects the entire OTP memory space from programming when
set to ‘1’. This allows trusted boot code to control programming of OTP regions then set the FREEZE bit to prevent
further OTP memory space programming during the remainder of normal power-on system operation.
32-byte OTP Region 31
32-byte OTP Region 30
32-byte OTP Region 29
.
.
.
When programmed to ‘0’
each lock bit protects its
related 32-byte region from
any further programming
32-byte OTP Region 3
32-byte OTP Region 2
32-byte OTP Region 1
32-byte OTP Region 0
...
Lock Bits 31 to 0
Reserved
Lock Bytes
16-byte Random Number
Contents of Region 0
{
Byte 1F
Byte 10
Byte 0
Figure 43
OTP address space
Table 22
Region
OTP address map
Byte address range
(Hex)
Initial delivery state
(Hex)
Contents
Region 0
000
Least significant byte of Infineon
programmed random number
Infineon programmed
random number
...
...
00F
Most significant byte of Infineon
programmed random number
010 to 013
Region locking bits
Byte 10 [bit 0] locks region 0 from
programming when = 0
...
Byte 13 [bit 7] locks region 31 from
programming when = 0
All bytes = FF
014 to 01F
020 to 03F
040 to 05F
...
Reserved for Future Use (RFU)
Available for user programming
Available for user programming
Available for user programming
Available for user programming
All bytes = FF
All bytes = FF
All bytes = FF
All bytes = FF
All bytes = FF
Region 1
Region 2
...
Region 31
3E0 to 3FF
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Registers
8
Registers
Registers are small groups of memory cells used to configure how the S25FL-S memory device operates or to
report the status of device operations. The registers are accessed by specific commands. The commands (and
hexadecimal instruction codes) used for each register are noted in each register description. The individual
register bits may be volatile, non-volatile, or One Time Programmable (OTP). The type for each bit is noted in each
register description. The default state shown for each bit refers to the state after power-on reset, hardware reset,
or software reset if the bit is volatile. If the bit is non-volatile or OTP, the default state is the value of the bit when
the device is shipped from Infineon. Non-volatile bits have the same cycling (erase and program) endurance as
the main flash array.
Table 23
Register descriptions
Register
Abbreviation
SR1[7:0]
Type
Volatile
Volatile
RFU
Bit location
Status Register 1
Configuration Register 1
Status Register 2
AutoBoot Register
Bank Address Register
ECC Status Register
ASP Register
7:0
7:0
7:0
31:0
7:0
7:0
15:1
0
CR1[7:0]
SR2[7:0]
ABRD[31:0]
BRAC[7:0]
ECCSR[7:0]
ASPR[15:1]
ASPR[0]
Non-volatile
Volatile
Volatile
OTP
ASP Register
RFU
Password Register
PPB Lock Register
PPB Lock Register
PASS[63:0]
PPBL[7:1]
PPBL[0]
Non-volatile OTP
Volatile
63:0
7:1
0
Volatile
Read only
PPB Access Register
DYB Access Register
SPI DDR Data Learning Registers
SPI DDR Data Learning Registers
PPBAR[7:0]
DYBAR[7:0]
NVDLR[7:0]
VDLR[7:0]
Non-volatile
Volatile
Non-volatile
Volatile
7:0
7:0
7:0
7:0
8.1
Status Register 1 (SR1)
Related commands: Read Status Register (RDSR1 05h), Write Registers (WRR 01h), Write Enable (WREN 06h), Write
Disable (WRDI 04h), Clear Status Register (CLSR 30h).
Table 24
Status Register 1 (SR1)
Bits Fieldname
Function
Type
Default state
Description
7
SRWD
Status
Register
Write Disable
Non-Volatile
0
1 = Locks state of SRWD, BP, and
configuration register bits when WP#
is LOW by ignoring WRR command
0 = No protection, even when WP# is
LOW
6
5
P_ERR
E_ERR
Programmin Volatile, Read only
0
0
1 = Error occurred.
0 = No error
g Error
Occurred
Erase Error Volatile, Read only
Occurred
1 = Error occurred
0 = No error
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Registers
Table 24
Status Register 1 (SR1) (continued)
Bits Fieldname
Function
Type
Default state
Description
4
3
2
BP2
BP1
BP0
Block
Protection
Volatile if CR1[3] = 1 if CR1[3] = 1, Protects selected range of sectors
1, Non-Volatile if
CR1[3] = 0
0 when
shipped from
Infineon
(Block) from Program or Erase
1
WEL
Write Enable
Latch
Volatile
0
1 = Device accepts Write Registers
(WRR), program or erase commands
0 = Device ignores Write Registers
(WRR), program or erase commands
This bit is not affected by WRR, only
WREN and WRDI commands affect this
bit
0
WIP
Write in
Progress
Volatile, Read only
0
1 = Device Busy, a Write Registers
(WRR), program, erase or other
operation is in progress
0 = Ready Device is in standby mode
and can accept commands
The Status Register contains both status and control bits:
Status Register Write Disable (SRWD) SR1[7]: Places the device in the Hardware Protected mode when this bit
is set to ‘1’ and the WP# input is driven low. In this mode, the SRWD, BP2, BP1, and BP0 bits of the Status Register
become read-only bits and the Write Registers (WRR) command is no longer accepted for execution. If WP# is
HIGH the SRWD bit and BP bits may be changed by the WRR command. If SRWD is 0, WP# has no effect and the
SRWD bit and BP bits may be changed by the WRR command. The SRWD bit has the same non-volatile endurance
as the main flash array.
Program Error (P_ERR) SR1[6]: The Program Error Bit is used as a program operation success or failure
indication. When the Program Error bit is set to a ‘1’ it indicates that there was an error in the last program
operation. This bit will also be set when the user attempts to program within a protected main memory sector or
locked OTP region. When the Program Error bit is set to a ‘1’ this bit can be reset to ‘0’ with the Clear Status
Register (CLSR) command. This is a read-only bit and is not affected by the WRR command.
Erase Error (E_ERR) SR1[5]: The Erase Error Bit is used as an Erase operation success or failure indication. When
the Erase Error bit is set to a ‘1’ it indicates that there was an error in the last erase operation. This bit will also be
set when the user attempts to erase an individual protected main memory sector. The Bulk Erase command will
not set E_ERR if a protected sector is found during the command execution. When the Erase Error bit is set to a
‘1’ this bit can be reset to ‘0’ with the Clear Status Register (CLSR) command. This is a read-only bit and is not
affected by the WRR command.
Block Protection (BP2, BP1, BP0) SR1[4:2]: These bits define the main flash array area to be software-protected
against program and erase commands. The BP bits are either volatile or non-volatile, depending on the state of
the BP non-volatile bit (BPNV) in the configuration register. When one or more of the BP bits is set to 1, the
relevant memory area is protected against program and erase. The Bulk Erase (BE) command can be executed
only when the BP bits are cleared to 0’s. See “Block protection” on page 64 for a description of how the BP bit
values select the memory array area protected. The BP bits have the same non-volatile endurance as the main
flash array.
Write Enable Latch (WEL) SR1[1]: The WEL bit must be set to ‘1’ to enable program, write, or erase operations
as a means to provide protection against inadvertent changes to memory or register values. The Write Enable
(WREN) command execution sets the Write Enable Latch to a ‘1’ to allow any program, erase, or write commands
to execute afterwards. The Write Disable (WRDI) command can be used to set the Write Enable Latch to a ‘0’ to
prevent all program, erase, and write commands from execution. The WEL bit is cleared to ‘0’ at the end of any
successful program, write, or erase operation. Following a failed operation, the WEL bit may remain set and
should be cleared with a WRDI command following a CLSR command. After a power down/power up sequence,
hardware reset, or software reset, the Write Enable Latch is set to a ‘0’ The WRR command does not affect this bit.
Datasheet
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Registers
Write In Progress (WIP) SR1[0]: Indicates whether the device is performing a program, write, erase operation,
or any other operation, during which a new operation command will be ignored. When the bit is set to a ‘1’ the
device is busy performing an operation. While WIP is 1, only Read Status (RDSR1 or RDSR2), Erase Suspend (ERSP),
Program Suspend (PGSP), Clear Status Register (CLSR), and Software Reset (RESET) commands may be
accepted. ERSP and PGSP will only be accepted if memory array erase or program operations are in progress. The
status register E_ERR and P_ERR bits are updated while WIP = 1. When P_ERR or E_ERR bits are set to one, the
WIP bit will remain set to one indicating the device remains busy and unable to receive new operation commands.
A Clear Status Register (CLSR) command must be received to return the device to standby mode. When the WIP
bit is cleared to ‘0’ no operation is in progress. This is a read-only bit.
8.2
Configuration Register 1 (CR1)
Related commands: Read Configuration Register (RDCR 35h), Write Registers (WRR 01h). The Configuration
Register bits can be changed using the WRR command with sixteen input cycles.
The Configuration Register controls certain interface and data protection functions.
Table 25
Configuration Register 1(CR1)
Function Type
Latency code Non-volatile
Bits Fieldname
7
6
Default state
Description
LC1
LC0
0
0
Selects number of initial read latency
cycles, see latency code tables
(Table 26 through Table 29)
5
TBPROT
Configures start
of block
OTP
0
1 = BP starts at bottom (Low address)
0 = BP starts at top (High address)
protection
4
3
DNU
BPNV
DNU
Configures BP2-0
in Status Register
OTP
OTP
0
0
Do Not Use
1 = Volatile
0 = Non-volatile
2
TBPARM
Configures
parameter
sectors location
OTP
0
1 = 4-KB physical sectors at top, (high
address)
0 = 4-KB physical sectors at bottom (low
address)
RFU in uniform sector devices
1
0
QUAD
Puts the device Non-volatile
into Quad I/O
0
0
1 = Quad
0 = Dual or Serial
operation
FREEZE
Lock current
state of BP2-0
bits in Status
Register,
Volatile
1 = Block protection and OTP locked
0 = Block protection and OTP un-locked
TBPROT and
TBPARM in
Configuration
Register, and
OTP regions
Latency Code (LC) CR1[7:6]: The Latency Code selects the number of mode and dummy cycles between the end
of address and the start of read data output for all read commands.
Some read commands send mode bits following the address to indicate that the next command will be of the
same type with an implied, rather than an explicit, instruction. The next command thus does not provide an
instruction byte, only a new address and mode bits. This reduces the time needed to send each command when
the same command type is repeated in a sequence of commands.
Dummy cycles provide additional latency that is needed to complete the initial read access of the flash array
before data can be returned to the host system. Some read commands require additional latency cycles as the
SCK frequency is increased.
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Registers
Table 26 through Table 29 provide different latency settings that are configured by Infineon. The High Perfor-
mance versus the Enhanced High Performance settings are selected by the ordering part number.
Where mode or latency (dummy) cycles are shown in the tables as a dash, that read command is not supported
at the frequency shown. Read is supported only up to 50 MHz but the same latency value is assigned in each
latency code and the command may be used when the device is operated at 50 MHz with any latency code
setting. Similarly, only the Fast Read command is supported up to 133 MHz but the same 10b latency code is used
for Fast Read up to 133 MHz and for the other dual and quad read commands up to 104 MHz. It is not necessary
to change the latency code from a higher to a lower frequency when operating at lower frequencies where a
particular command is supported. The latency code values for a higher frequency can be used for accesses at
lower frequencies.
The High Performance settings provide latency options that are the same or faster than alternate source SPI
memories. These settings provide mode bits only for the Quad I/O Read command.
The Enhanced High Performance settings similarly provide latency options the same or faster than additional
alternate source SPI memories and adds mode bits for the Dual I/O Read, DDR Fast Read, and DDR Dual I/O Read
commands.
Read DDR Data Learning Pattern (DLP) bits may be placed within the dummy cycles immediately before the start
of read data, if there are 5 or more dummy cycles. See “Read memory array commands” on page 89 for more
information on the DLP.
Table 26
Latency codes for SDR high performance
Read
(03h, 13h)
Fast Read Read Dual Out Read Quad Out Dual I/O Read Quad I/O Read
(0Bh, 0Ch) (3Bh, 3Ch) (6Bh, 6Ch) (BBh, BCh) (EBh, ECh)
Freq.
LC
(MHz)
Mode Dummy Mode Dummy Mode Dummy Mode Dummy Mode Dummy Mode Dummy
≤ 50 11
≤ 80 00
≤ 90 01
≤104 10
≤133 10
0
–
–
–
–
0
–
–
–
–
0
0
0
0
0
0
8
8
8
8
0
0
0
0
–
0
8
8
8
–
0
0
0
0
–
0
8
8
8
–
0
0
0
0
–
4
4
5
6
–
2
2
2
2
–
1
4
4
5
–
Table 27
Latency codes for DDR high performance[45]
DDR Fast Read
(0Dh, 0Eh)
DDR Dual I/O Read
(BDh, BEh)
Read DDR Quad I/O
(EDh, EEh)
Freq.
LC
(MHz)
Mode
Dummy
Mode
Dummy
Mode
Dummy
≤ 50
≤ 66
≤ 66
11
00
01
10
0
0
0
0
4
5
6
7
0
0
0
0
4
6
7
8
1
1
1
1
3
6
7
8
≤ 66
Note
45. When using DDR I/O commands with the Data Learning Pattern (DLP) enabled, a Latency Code that provides
5 or more dummy cycles should be selected to allow 1 cycle of additional time for the host to stop driving
before the memory starts driving the 4 cycle DLP. It is recommended to use LC 10 for DDR Fast Read, LC 01
for DDR Dual IO Read, and LC 00 for DDR Quad IO Read, if the Data Learning Pattern (DLP) for DDR is used.
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Registers
Table 28
Freq.
Latency codes for SDR enhanced high performance
Read Quad
Out
Read
Fast Read
(0Bh, 0Ch)
Read Dual Out
(3Bh, 3Ch)
Dual I/O Read QuadI/ORead
(BBh, BCh) (EBh, ECh)
LC
(MHz)
(03h, 13h)
(6Bh, 6Ch)
Mode Dummy Mode Dummy Mode Dummy Mode Dummy Mode Dummy Mode Dummy
≤ 50 11
≤ 80 00
≤ 90 01
≤104 10
≤133 10
0
–
–
–
–
0
–
–
–
–
0
0
0
0
0
0
8
8
8
8
0
0
0
0
–
0
8
8
8
–
0
0
0
0
–
0
8
8
8
–
4
4
4
4
–
0
0
1
2
–
2
2
2
2
–
1
4
4
5
–
Table 29
Latency codes for DDR enhanced high performance[46]
DDR Fast Read
(0Dh, 0Eh)
DDR Dual I/O Read
(BDh, BEh)
Read DDR Quad I/O
(EDh, EEh)
Freq.
LC
(MHz)
Mode
Dummy
Mode
Dummy
Mode
Dummy
≤ 50
≤ 66
≤ 66
≤ 66
≤ 80
≤ 80
≤ 80
Note
11
00
01
10
00
01
10
4
4
4
4
4
4
4
1
2
4
5
2
4
5
2
2
2
2
2
2
2
2
4
5
6
4
5
6
1
1
1
1
1
1
1
3
6
7
8
6
7
8
46. When using DDR I/O commands with the Data Learning Pattern (DLP) enabled, a Latency Code that provides
5 or more dummy cycles should be selected to allow 1 cycle of additional time for the host to stop driving
before the memory starts driving the 4 cycle DLP. It is recommended to use LC 10 for DDR Fast Read, LC 01
for DDR Dual IO Read, and LC 00 for DDR Quad IO Read, if the Data Learning Pattern (DLP) for DDR is used.
Top or Bottom Protection (TBPROT) CR1[5]: This bit defines the operation of the Block Protection bits BP2,
BP1, and BP0 in the Status Register. As described in the status register section, the BP2-0 bits allow the user to
optionally protect a portion of the array, ranging from 1/64, 1/4, 1/2, etc., up to the entire array. When TBPROT is
set to a ‘0’ the Block Protection is defined to start from the top (maximum address) of the array. When TBPROT
is set to a ‘1’ the Block Protection is defined to start from the bottom (‘0’ address) of the array. The TBPROT bit is
OTP and set to a ‘0’ when shipped from Infineon. If TBPROT is programmed to 1, an attempt to change it back to
‘0’ will fail and set the Program Error bit (P_ERR in SR1[6]).
The desired state of TBPROT must be selected during the initial configuration of the device during system
manufacture; before the first program or erase operation on the main flash array. TBPROT must not be
programmed after programming or erasing is done in the main flash array.
CR1[4]: Reserved for Future Use
Block Protection Non-Volatile (BPNV) CR1[3]: The BPNV bit defines whether or not the BP2-0 bits in the Status
Register are volatile or non-volatile. The BPNV bit is OTP and cleared to a ‘0’ with the BP bits cleared to 000 when
shipped from Infineon. When BPNV is set to a ‘0’ the BP2-0 bits in the Status Register are non-volatile. When BPNV
is set to a ‘1’ the BP2-0 bits in the Status Register are volatile and will be reset to binary ‘111’ after POR, hardware
reset, or command reset. If BPNV is programmed to ‘1’, an attempt to change it back to ‘0’ will fail and set the
Program Error bit (P_ERR in SR1[6]).
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Registers
TBPARM CR1[2]: TBPARM defines the logical location of the parameter block. The parameter block consists of
thirty-two 4-KB small sectors (SMS), which replace two 64-KB sectors. When TBPARM is set to a ‘1’ the parameter
block is in the top of the memory array address space. When TBPARM is set to a ‘0’ the parameter block is at the
Bottom of the array. TBPARM is OTP and set to a ‘0’ when it ships from Infineon. If TBPARM is programmed to 1,
an attempt to change it back to ‘0’ will fail and set the Program Error bit (P_ERR in SR1[6]).
The desired state of TBPARM must be selected during the initial configuration of the device during system
manufacture; before the first program or erase operation on the main flash array. TBPARM must not be
programmed after programming or erasing is done in the main flash array.
TBPROT can be set or cleared independent of the TBPARM bit. Therefore, the user can elect to store parameter
information from the bottom of the array and protect boot code starting at the top of the array, and vice versa.
Or the user can select to store and protect the parameter information starting from the top or bottom together.
When the memory array is logically configured as uniform 256-KB sectors, the TBPARM bit is Reserved for Future
Use (RFU) and has no effect because all sectors are uniform size.
Quad Data Width (QUAD) CR1[1]: When set to 1, this bit switches the data width of the device to 4 bit - Quad
mode. That is, WP# becomes IO2 and HOLD# becomes IO3. The WP# and HOLD# inputs are not monitored for their
normal functions and are internally set to HIGH (inactive). The commands for Serial, Dual Output, and Dual I/O
Read still function normally but, there is no need to drive WP# and Hold# inputs for those commands when
switching between commands using different data path widths. The QUAD bit must be set to one when using
Read Quad Out, Quad I/O Read, Read DDR Quad I/O, and Quad Page Program commands. The QUAD bit is
non-volatile.
Freeze Protection (FREEZE) CR1[0]: The Freeze Bit, when set to 1, locks the current state of the BP2-0 bits in
Status Register, the TBPROT and TBPARM bits in the Configuration Register, and the OTP address space. This
prevents writing, programming, or erasing these areas. As long as the FREEZE bit remains cleared to logic ‘0’ the
other bits of the Configuration Register, including FREEZE, are writable, and the OTP address space is program-
mable. Once the FREEZE bit has been written to a logic ‘1’ it can only be cleared to a logic ‘0’ by a power-off to
power-on cycle or a hardware reset. Software reset will not affect the state of the FREEZE bit. The FREEZE bit is
volatile and the default state of FREEZE after power-on is ‘0’. The FREEZE bit can be set in parallel with updating
other values in CR1 by a single WRR command.
8.3
Status Register 2 (SR2)
Related commands: Read Status Register 2 (RDSR2 07h).
Table 30
Status Register 2 (SR2)
Field name Function
Bits
7
6
5
4
3
2
1
Type
Default state
Description
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
RFU
RFU
RFU
RFU
RFU
RFU
ES
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
–
–
–
–
–
–
0
0
0
0
0
0
0
Erase
Suspend
Volatile, Read
only
1 = In erase suspend mode
0 = Not in erase suspend mode
0
PS
Program
Suspend
Volatile, Read
only
0
1 = In program suspend mode
0 = Not in program suspend mode
Erase Suspend (ES) SR2[1]: The Erase Suspend bit is used to determine when the device is in Erase Suspend
mode. This is a status bit that cannot be written. When Erase Suspend bit is set to 1, the device is in erase suspend
mode. When Erase Suspend bit is cleared to 0, the device is not in erase suspend mode. See the Erase Suspend
and Resume Commands (75h) (7Ah) for details about the Erase Suspend/Resume commands.
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Registers
Program Suspend (PS) SR2[0]: The Program Suspend bit is used to determine when the device is in Program
Suspend mode. This is a status bit that cannot be written. When Program Suspend bit is set to 1, the device is in
program suspend mode. When the Program Suspend bit is cleared to 0, the device is not in program suspend
mode. See “Program Suspend (PGSP 85h) and Resume (PGRS 8Ah)” on page 111 for details.
8.4
AutoBoot Register
Related commands: AutoBoot Read (ABRD 14h) and AutoBoot Write (ABWR 15h).
The AutoBoot Register provides a means to automatically read boot code as part of the power-on reset, hardware
reset, or software reset process.
Table 31
Bits
AutoBoot Register
Field name Function
Type
Default state
Description
31 to 9
ABSA
AutoBoot Start Non-volatile
000000h
512 byte boundary address for the
start of boot code access
Address
8 to 1
ABSD
AutoBoot Start Non-volatile
Delay
00h
0
Number of initial delay cycles
between CS# going LOW and the
first bit of boot code being trans-
ferred
1 = AutoBoot is enabled
0 = AutoBoot is not enabled
0
ABE
AutoBoot Enable Non-volatile
8.5
Bank Address Register
Related commands: Bank Register Access (BRAC B9h), Write Register (WRR 01h), Bank Register Read (BRRD 16h)
and Bank Register Write (BRWR 17h).
The Bank Address register supplies additional high order bits of the main flash array byte boundary address for
legacy commands that supply only the low order 24 bits of address. The Bank Address is used as the high bits of
address (above A23) for all 3-byte address commands when EXTADD = 0. The Bank Address is not used when
EXTADD = 1 and traditional 3-byte address commands are instead required to provide all four bytes of address.
Table 32
Bank Address Register (BAR)
Bits
Field name
Function
Type
Default state
Description
7
EXTADD
Extended
Address Enable
Volatile
0b
1 = 4-byte (32-bits) addressing
required from command.
0 = 3-byte (24-bits) addressing from
command + Bank Address
6 to 1
0
RFU
BA24
Reserved
Bank Address
Volatile
Volatile
00000b
0
Reserved for Future Use
A24 for 256-Mb device, RFU for lower
density device
Extended Address (EXTADD) BAR[7]: EXTADD controls the address field size for legacy SPI commands. By default
(power up reset, hardware reset, and software reset), it is cleared to ‘0’ for 3-bytes (24-bits) of address. When set
to ‘1’, the legacy commands will require 4 bytes (32 bits) for the address field. This is a volatile bit.
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Registers
8.6
ECC Status Register (ECCSR)
Related commands: ECC Read (ECCRD 18h). ECCSR does not have user programmable non-volatile bits. All
defined bits are volatile read only status. The default state of these bits are set by hardware. See “Automatic
ECC” on page 106.
The status of ECC in each ECC unit is provided by the 8-bit ECC Status Register (ECCSR). The ECC Register Read
command is written followed by an ECC unit address. The contents of the status register then indicates, for the
selected ECC unit, whether there is an error in the ECC unit eight bit error correction code, the ECC unit of 16 Bytes
of data, or that ECC is disabled for that ECC unit.
Table 33
Bits
7 to 3
2
ECC Status Register (ECCSR)
Field name
Function
Reserved
Type
Defaultstate
Description
Reserved for Future Use
1 = Single Bit Error found in the ECC
unit eight bit error correction code
0 = No error.
RFU
0
0
EECC
Error in ECC
Volatile, Read
only
1
0
EECCD
ECCDI
Error in ECC unit Volatile, Read
0
0
1 = Single Bit Error corrected in ECC
unit data.
data
only
0 = No error.
ECC Disabled
Volatile, Read
only
1 = ECC is disabled in the selected
ECC unit.
0 = ECC is enabled in the selected
ECC unit.
ECCSR[2] = 1 indicates an error was corrected in the ECC. ECCSR[1] = 1 indicates an error was corrected in the ECC
unit data. ECCSR[0] = 1 indicates the ECC is disabled. The default state of “0” for all these bits indicates no failures
and ECC is enabled.
ECCSR[7:3] are reserved. These have undefined high or low values that can change from one ECC status read to
another. These bits should be treated as “don’t care” and ignored by any software reading status.
8.7
ASP Register (ASPR)
Related commands: ASP Read (ASPRD 2Bh) and ASP Program (ASPP 2Fh).
The ASP register is a 16-bit OTP memory location used to permanently configure the behavior of Advanced Sector
Protection (ASP) features.
Table 34
ASP Register (ASPR)
Bits
15 to 9
Field name
Function
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Type
OTP
OTP
OTP
OTP
OTP
OTP
OTP
OTP
Defaultstate
Description
Reserved for Future Use
RFU
RFU
RFU
RFU
RFU
1
8
7
6
5
4
3
2
Note [47] Reserved for Future Use
Reserved for Future Use
1
Reserved for Future Use
Note [47] Reserved for Future Use
Reserved for Future Use
RFU
RFU
Reserved for Future Use
PWDMLB
Password
Protection Mode
Lock Bit
1
0 = Password Protection Mode
permanently enabled.
1 = Password Protection Mode not
permanently enabled.
Note
47. Default value depends on ordering part number, see “Initial delivery state” on page 148.
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Registers
Table 34
ASP Register (ASPR) (continued)
Bits
Field name
Function
Type
Defaultstate
Description
1
PSTMLB
Persistent
Protection Mode
Lock Bit
OTP
1
0 = Persistent Protection Mode
permanently enabled.
1 = Persistent Protection Mode not
permanently enabled.
0
RFU
Reserved
OTP
1
Reserved for Future Use
Note
47. Default value depends on ordering part number, see “Initial delivery state” on page 148.
Reserved for Future Use (RFU) ASPR[15:3, 0].
Password Protection Mode Lock Bit (PWDMLB) ASPR[2]: When programmed to 0, the Password Protection
Mode is permanently selected.
Persistent Protection Mode Lock Bit (PSTMLB) ASPR[1]: When programmed to 0, the Persistent Protection
Mode is permanently selected. PWDMLB and PSTMLB are mutually exclusive, only one may be programmed to ‘0’.
8.8
Password Register (PASS)
Related commands: Password Read (PASSRD E7h) and Password Program (PASSP E8h).
Table 35
Bits
63 to 0
Password Register (PASS)
Field name
PWD
Function
Hidden Password
Type
OTP
Default state
Description
FFFFFFFF- Non-volatile OTP storage of 64 bit
FFFFFFFFh password. The password is no
longer readable after the password
protection mode is selected by
programming ASP register bit ‘2’ to
‘0’.
8.9
PPB Lock Register (PPBL)
Related commands: PPB Lock Read (PLBRD A7h, PLBWR A6h).
Table 36
Bits
7 to 1
0
PPB Lock Register (PPBL)
Field name
Function
Reserved
Type
Volatile
Volatile
Default state
Description
Reserved for Future Use
RFU
00h
PPBLOCK
ProtectPPBArray
Persistent 0 = PPB array protected until next
Protection power cycle or hardware reset
mode = 1
1 = PPB array may be programmed
Password or erased.
Protection
mode = 0
Datasheet
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SPI Multi-I/O, 3.0V
Registers
8.10
PPB Access Register (PPBAR)
Related commands: PPB Read (PPBRD E2h)
Table 37 PPB Access Register (PPBAR)
Bits Field name Function Type
Default state
Description
7 to 0
PPB
Read or Program Non-volatile
per sector PPB
FFh
00h = PPB for the sector addressed by the
PPBRD or PPBP command is programmed
to 0, protecting that sector from program
or erase operations.
FFh = PPB for the sector addressed by the
PPBRD or PPBP command is erased to 1,
not protecting that sector from program
or erase operations.
8.11
DYB Access Register (DYBAR)
Related commands: DYB Read (DYBRD E0h) and DYB Program (DYBP E1h).
Table 38 DYB Access Register (DYBAR)
Bits Field name
Function
Type
Default state
Description
7 to 0
DYB
Read or Write
per sector DYB
Volatile
FFh
00h = DYB for the sector addressed by the
DYBRD or DYBP command is cleared to 0,
protecting that sector from program or
erase operations.
FFh = DYB for the sector addressed by the
DYBRD or DYBP command is set to 1, not
protecting that sector from program or
erase operations.
8.12
SPI DDR Data Learning Registers
Related commands: Program NVDLR (PNVDLR 43h), Write VDLR (WVDLR 4Ah), Data Learning Pattern Read (DLPRD
41h).
The Data Learning Pattern (DLP) resides in an 8-bit Non-Volatile Data Learning Register (NVDLR) as well as an 8-bit
Volatile Data Learning Register (VDLR). When shipped from Infineon, the NVDLR value is 00h. Once programmed,
the NVDLR cannot be reprogrammed or erased; a copy of the data pattern in the NVDLR will also be written to the
VDLR. The VDLR can be written to at any time, but on reset or power cycles the data pattern will revert back to
what is in the NVDLR. During the learning phase described in the SPI DDR modes, the DLP will come from the
VDLR. Each IO will output the same DLP value for every clock edge. For example, if the DLP is 34h (or binary
00110100) then during the first clock edge all IO’s will output 0; subsequently, the 2nd clock edge all I/O’s will
output 0, the 3rd will output 1, etc.
When the VDLR value is 00h, no preamble data pattern is presented during the dummy phase in the DDR
commands.
Table 39
Non-Volatile Data Learning Register (NVDLR)
Bits Field name
Function
Type
Default state
Description
7 to 0
NVDLP
Non-Volatile
Data Learning
Pattern
OTP
00h
OTP value that may be transferred to the
host during DDR read command latency
(dummy) cycles to provide a training
pattern to help the host more accurately
center the data capture point in the
received data bits.
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SPI Multi-I/O, 3.0V
Registers
Table 40
Volatile Data Learning Register (NVDLR)
Bits Field name
Function
Type
Default state
Description
7 to 0
VDLP
Volatile Data
LearningPattern
Volatile
Takes the
value of
Volatile copy of the NVDLP used to enable
and deliver the Data Learning Pattern
NVDLR during (DLP) to the outputs. The VDLP may be
POR or Reset changed by the host during system
operation.
Datasheet
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SPI Multi-I/O, 3.0V
Embedded algorithm performance tables
9
Embedded algorithm performance tables
Table 41
Symbol
tW
Program and Erase performance
Parameter
WRR Write Time
Min
–
Typ[48] Max[49]
Unit
ms
140
500
tPP
Page Programming (512 bytes)
Page Programming (256 bytes)
Sector Erase Time
(64-KB / 4-KB physical sectors)
Sector Erase Time
(64 KB Top/Bottom: logical sector = 16 x 4-KB physical
sectors)
–
340
250
130
750
µs
750[50]
tSE
–
–
650[51]
ms
ms
2,080
10,400
Sector Erase Time
(256-KB logical sectors = 4 x 64-KB physical sectors)
–
520
2600
ms
tBE
tBE
Bulk Erase Time (S25FL128S)
Bulk Erase Time (S25FL256S)
–
–
33
66
165
330
sec
sec
Notes
48. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0V; 10,000 cycles; checker-
board data pattern.
49. Under worst case conditions of 90°C; 100,000 cycles max.
50. Maximum value also applies to OTPP, PPBP, ASPP, and PASSP programming commands.
51. Maximum value also applies to the PPBE erase command.
Table 42
Program Suspend AC parameters
Parameter
Min
Typical Max
Unit
Comments
Program Suspend Latency (tPSL
)
–
–
40
µs
The time from Program Suspend
command until the WIP bit is 0
Program Resume to next Program
0.06
100
–
µs
Minimumisthetimeneededtoissuethe
next Program Suspend command but ≥
typical periods are needed for Program
to progress to completion
Suspend (tPRS
)
Table 43
Erase Suspend AC parameters
Parameter
Min
Typical Max
Unit
Comments
Erase Suspend Latency (tESL
)
–
–
45
µs
The time from Erase Suspend
command until the WIP bit is 0
Erase Resume to next Erase
Suspend (tERS)
0.06
100
–
µs
Minimumis the time neededtoissue the
next Erase Suspend command but ≥
typical periods are needed for the Erase
to progress to completion
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Data protection
10
Data protection
10.1
Secure silicon region (OTP)
The device has a 1024-byte One Time Program (OTP) address space that is separate from the main flash array.
The OTP area is divided into 32, individually lockable, 32-byte aligned and length regions.
The OTP memory space is intended for increased system security. OTP values can “mate” a flash component with
the system CPU/ASIC to prevent device substitution. See “OTP address space” on page 49, “One Time Program
Array commands” on page 118, and “OTP Read (OTPR 4Bh)” on page 118.
10.1.1
Reading OTP memory space
The OTP Read command uses the same protocol as Fast Read. OTP Read operations outside the valid 1-KB OTP
address range will yield indeterminate data.
10.1.2
Programming OTP memory space
The protocol of the OTP programming command is the same as Page Program. The OTP Program command can
be issued multiple times to any given OTP address, but this address space can never be erased.
Automatic ECC is programmed on the first programming operation to each 16-byte region. Programming within
a 16-byte region more than once disables the ECC. It is recommended to program each 16-byte portion of each
32-byte region once so that ECC remains enabled to provide the best data integrity.
The valid address range for OTP Program is depicted in Figure 43. OTP Program operations outside the valid OTP
address range will be ignored and the WEL in SR1 will remain HIGH (set to 1). OTP Program operations while
FREEZE = 1 will fail with P_ERR in SR1 set to ‘1’.
10.1.3
Infineon programmed random number
Infineon standard practice is to program the low order 16 bytes of the OTP memory space (locations 0x0 to 0xF)
with a 128-bit random number using the Linear Congruential Random Number method. The seed value for the
algorithm is a random number concatenated with the day and time of tester insertion.
10.1.4
Lock bytes
The LSb of each Lock byte protects the lowest address region related to the byte, the MSb protects the highest
address region related to the byte. The next higher address byte similarly protects the next higher eight regions.
The LSb bit of the lowest address Lock Byte protects the higher address 16 bytes of the lowest address region. In
other words, the LSb of location 0x10 protects all the Lock Bytes and RFU bytes in the lowest address region from
further programming. See “OTP address space” on page 49.
10.2
Write Enable command
The Write Enable (WREN) command must be written prior to any command that modifies non-volatile data. The
WREN command sets the Write Enable Latch (WEL) bit. The WEL bit is cleared to ‘0’ (disables writes) during
power-up, hardware reset, or after the device completes the following commands:
• Reset
• Page Program (PP)
• Sector Erase (SE)
• Bulk Erase (BE)
• Write Disable (WRDI)
• Write Registers (WRR)
• Quad-input Page Programming (QPP)
• OTP Byte Programming (OTPP)
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Data protection
10.3
Block protection
The Block Protect bits (Status Register bits BP2, BP1, BP0) in combination with the Configuration Register
TBPROT bit can be used to protect an address range of the main flash array from program and erase operations.
The size of the range is determined by the value of the BP bits and the upper or lower starting point of the range
is selected by the TBPROT bit of the configuration register.
Table 44
Upper array start of protection (TBPROT = 0)
Status Register content
Protected memory (KB)
Protected fraction
FL128S
128 Mb
FL256S
256 Mb
of memory array
BP2
BP1
BP0
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
None
0
256
512
1024
2048
4096
8192
16384
0
512
Upper 64th
Upper 32nd
Upper 16th
Upper 8th
Upper 4th
Upper half
All sectors
1024
2048
4096
8192
16384
32768
Table 45
Lower array start of protection (TBPROT = 1)
Status Register content
Protected memory (KB)
Protected fraction
FL128S
128 Mb
FL256S
256 Mb
of memory array
BP2
BP1
BP0
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
None
0
256
512
1024
2048
4096
8192
16384
0
512
Lower 64th
Lower 32nd
Lower 16th
Lower 8th
Lower 4th
Lower half
All sectors
1024
2048
4096
8192
16384
32768
When Block Protection is enabled (i.e., any BP2-0 are set to 1), Advanced Sector Protection (ASP) can still be used
to protect sectors not protected by the Block Protection scheme. In the case that both ASP and Block Protection
are used on the same sector the logical OR of ASP and Block Protection related to the sector is used. Recommen-
dation: ASP and Block Protection should not be used concurrently. Use one or the other, but not both.
10.3.1
Freeze bit
Bit 0 of the Configuration Register is the FREEZE bit. The FREEZE bit locks the BP2-0 bits in Status Register 1 and
the TBPROT bit in the Configuration Register to their value at the time the FREEZE bit is set to ‘1’. Once the FREEZE
bit has been written to a logic ‘1’ it cannot be cleared to a logic ‘0’ until a power-on-reset is executed. As long as
the FREEZE bit is cleared to logic ‘0’ the status register BP bits and the TBPROT bit of the Configuration Register
are writable. The FREEZE bit also protects the entire OTP memory space from programming when set to ‘1’. Any
attempt to change the BP bits with the WRR command while FREEZE = 1 is ignored and no error status is set.
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SPI Multi-I/O, 3.0V
Data protection
10.3.2
Write Protect signal
The Write Protect (WP#) input in combination with the Status Register Write Disable (SRWD) bit provide hardware
input signal controlled protection. When WP# is LOW and SRWD is set to ‘1’, the Status and Configuration register
is protected from alteration. This prevents disabling or changing the protection defined by the Block Protect bits.
10.4
Advanced sector protection
Advanced Sector Protection (ASP) is the name used for a set of independent hardware and software methods
used to disable or enable programming or erase operations, individually, in any or all sectors. An overview of
these methods is shown in Figure 44.
Block Protection and ASP protection settings for each sector are logically OR’d to define the protection for each
sector, i.e. if either mechanism is protecting a sector the sector cannot be programmed or erased. See “Block
protection” on page 64 for full details of the BP2-0 bits.
ASP Register
One Time Programmable
Password Method Persistent Method
(ASPR[2]=0)
(ASPR[1]=0)
6) Password Method requires a
password to set PPB Lock to ‘1’
to enable program or erase of
PPB bits
7) Persistent Method only allows
PPB Lock to be cleared to ‘0’ to
prevent program or erase of PPB
bits. Power off or hardware reset
required to set PPB Lock to ‘1’
64-bit Password
(One Time Protect)
4) PPB Lock bit is volatile and
defaults to ‘1’ (persistent mode), or
‘0’ (password mode) upon reset
PBB Lock Bit
‘0’ = PPBs locked
‘1’=PPBs unlocked
5) PPB Lock = ‘0’ locks all PPBs
to their current state
Persistent
Protection Bits
(PPB)
Dynamic
Protection Bits
(DYB)
Memory Array
Sector 0
Sector 1
Sector 2
PPB 0
PPB 1
PPB 2
DYB 0
DYB 1
DYB 2
Sector N-2
Sector N-1
Sector N
PPB N-2
PPB N-1
PPB N
DYB N-2
DYB N-1
DYB N
3) DYB are volatile bits
1) N = Highest Address Sector,
a sector is protected if its PPB =’0’
or its DYB = ‘0’
PPB are programmed individually
but erased as a group
2)
Figure 44
Advanced sector protection overview
Every main flash array sector has a non-volatile (PPB) and a volatile (DYB) protection bit associated with it. When
either bit is 0, the sector is protected from program and erase operations.
The PPB bits are protected from program and erase when the PPB Lock bit is ‘0’. There are two methods for
managing the state of the PPB Lock bit, Persistent Protection and Password Protection.
The Persistent Protection method sets the PPB Lock bit to ‘1’ during POR, or Hardware Reset so that the PPB bits
are unprotected by a device reset. There is a command to clear the PPB Lock bit to ‘0’ to protect the PPB. There
is no command in the Persistent Protection method to set the PPB Lock bit to 1, therefore the PPB Lock bit will
remain at ‘0’ until the next power-off or hardware reset. The Persistent Protection method allows boot code the
option of changing sector protection by programming or erasing the PPB, then protecting the PPB from further
change for the remainder of normal system operation by clearing the PPB Lock bit to ‘0’. This is sometimes called
Boot-code controlled sector protection.
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Data protection
The Password method clears the PPB Lock bit to ‘0’ during POR, or Hardware Reset to protect the PPB. A 64-bit
password may be permanently programmed and hidden for the password method. A command can be used to
provide a password for comparison with the hidden password. If the password matches, the PPB Lock bit is set
to ‘1’ to unprotect the PPB. A command can be used to clear the PPB Lock bit to ‘0’. This method requires use of
a password to control PPB protection.
The selection of the PPB Lock bit management method is made by programming OTP bits in the ASP Register so
as to permanently select the method used.
10.4.1
ASP Register
The ASP register is used to permanently configure the behavior of Advanced Sector Protection (ASP) features (see
Table 34).
As shipped from the factory, all devices default ASP to the Persistent Protection mode, with all sectors unpro-
tected, when power is applied. The device programmer or host system must then choose which sector protection
method to use. Programming either of the, one-time programmable, Protection Mode Lock Bits, locks the part
permanently in the selected mode:
• ASPR[2:1] = 11 = No ASP mode selected, Persistent Protection Mode is the default.
• ASPR[2:1] = 10 = Persistent Protection Mode permanently selected.
• ASPR[2:1] = 01 = Password Protection Mode permanently selected.
• ASPR[2:1] = 00 = Illegal condition, attempting to program both bits to ‘0’ results in a programming failure.
• ASP register programming rules:
- If the password mode is chosen, the password must be programmed prior to setting the Protection Mode Lock
Bits.
- Once the Protection Mode is selected, the Protection Mode Lock Bits are permanently protected from pro-
gramming and no further changes to the ASP register is allowed.
The programming time of the ASP Register is the same as the typical page programming time. The system can
determine the status of the ASP register programming operation by reading the WIP bit in the Status Register.
See “Status Register 1 (SR1)” on page 51 for information on WIP.
After selecting a sector protection method, each sector can operate in each of the following states:
• Dynamically Locked — A sector is protected and can be changed by a simple command.
• Persistently Locked — A sector is protected and cannot be changed if its PPB Bit is ‘0’.
• Unlocked — The sector is unprotected and can be changed by a simple command.
10.4.2
Persistent protection bits
The Persistent Protection Bits (PPB) are located in a separate non-volatile flash array. One of the PPB bits is
related to each sector. When a PPB is 0, its related sector is protected from program and erase operations. The
PPB are programmed individually but must be erased as a group, similar to the way individual words may be
programmed in the main array but an entire sector must be erased at the same time. The PPB have the same
program and erase endurance as the main flash memory array. Preprogramming and verification prior to erasure
are handled by the device.
Programming a PPB bit requires the typical page programming time. Erasing all the PPBs requires typical sector
erase time. During PPB bit programming and PPB bit erasing, status is available by reading the Status register.
Reading of a PPB bit requires the initial access time of the device.
Notes:
Each PPB is individually programmed to ‘0’ and all are erased to ‘1’ in parallel.
If the PPB Lock bit is 0, the PPB Program or PPB Erase command does not execute and fails without programming
or erasing the PPB.
The state of the PPB for a given sector can be verified by using the PPB Read command.
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Data protection
10.4.3
Dynamic protection bits
Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYB only
control the protection for sectors that have their PPB set to ‘1’. By issuing the DYB Write command, a DYB is
cleared to ‘0’ or set to ‘1’, thus placing each sector in the protected or unprotected state respectively. This feature
allows software to easily protect sectors against inadvertent changes, yet does not prevent the easy removal of
protection when changes are needed. The DYBs can be set or cleared as often as needed as they are volatile bits.
10.4.4
PPB Lock Bit (PPBL[0])
The PPB Lock Bit is a volatile bit for protecting all PPB bits. When cleared to 0, it locks all PPBs and when set to
1, it allows the PPBs to be changed.
The PLBWR command is used to clear the PPB Lock bit to ‘0’. The PPB Lock Bit must be cleared to ‘0’ only after
all the PPBs are configured to the desired settings.
In Persistent Protection mode, the PPB Lock is set to ‘1’ during POR or a hardware reset. When cleared to 0, no
software command sequence can set the PPB Lock bit to 1, only another hardware reset or power-up can set the
PPB Lock bit.
In the Password Protection mode, the PPB Lock bit is cleared to ‘0’ during POR or a hardware reset. The PPB Lock
bit can only be set to ‘1’ by the Password Unlock command.
10.4.5
Sector protection states summary
Each sector can be in one of the following protection states:
• Unlocked — The sector is unprotected and protection can be changed by a simple command. The protection
state defaults to unprotected after a power cycle, software reset, or hardware reset.
• Dynamically Locked — A sector is protected and protection can be changed by a simple command. The
protection state is not saved across a power cycle or reset.
• Persistently Locked — A sector is protected and protection can only be changed if the PPB Lock Bit is set to ‘1’.
The protection state is non-volatile and saved across a power cycle or reset. Changing the protection state
requires programming and or erase of the PPB bits.
Table 46
Sector protection states
Protection bit values
Sector state
PPB Lock
PPB
1
1
0
0
1
1
0
0
DYB
1
0
1
0
1
0
1
0
1
1
1
1
0
0
0
0
Unprotected – PPB and DYB are changeable
Protected – PPB and DYB are changeable
Protected – PPB and DYB are changeable
Protected – PPB and DYB are changeable
Unprotected – PPB not changeable, DYB is changeable
Protected – PPB not changeable, DYB is changeable
Protected – PPB not changeable, DYB is changeable
Protected – PPB not changeable, DYB is changeable
10.4.6
Persistent Protection mode
The Persistent Protection method sets the PPB Lock bit to ‘1’ during POR or Hardware Reset so that the PPB bits
are unprotected by a device hardware reset. Software reset does not affect the PPB Lock bit. The PLBWR
command can clear the PPB Lock bit to ‘0’ to protect the PPB. There is no command to set the PPB Lock bit
therefore the PPB Lock bit will remain at ‘0’ until the next power-off or hardware reset.
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Data protection
10.4.7
Password Protection mode
Password Protection mode allows an even higher level of security than the Persistent Sector Protection Mode,
by requiring a 64-bit password for unlocking the PPB Lock bit. In addition to this password requirement, after
power up and hardware reset, the PPB Lock bit is cleared to ‘0’ to ensure protection at power-up. Successful
execution of the Password Unlock command by entering the entire password clears the PPB Lock bit, allowing
for sector PPB modifications.
Password Protection notes:
• Once the Password is programmed and verified, the Password Mode (ASPR[2] = 0) must be set in order to prevent
reading the password.
• The Password Program Command is only capable of programming ‘0’s. Programming a ‘1’ after a cell is
programmed as a ‘0’ results in the cell left as a ‘0’ with no programming error set.
• The password is all ‘1’s when shipped from Infineon. It is located in its own memory space and is accessible
through the use of the Password Program and Password Read commands.
• All 64-bit password combinations are valid as a password.
• The Password Mode, once programmed, prevents reading the 64-bit password and further password
programming. All further program and read commands to the password region are disabled and these
commands are ignored. There is no means to verify what the password is after the Password Mode Lock Bit is
selected. Password verification is only allowed before selecting the Password Protection mode.
• The Protection Mode Lock Bits are not erasable.
• The exact password must be entered in order for the unlocking function to occur. If the password unlock
command provided password does not match the hidden internal password, the unlock operation fails in the
same manner as a programming operation on a protected sector. The P_ERR bit is set to one and the WIP Bit
remains set. In this case it is a failure to change the state of the PPB Lock bit because it is still protected by the
lack of a valid password.
• The Password Unlock command cannot be accepted any faster than once every 100 µs ± 20 µs. This makes it
take an unreasonably long time (58 million years) for a hacker to run through all the 64-bit combinations in an
attempt to correctly match a password. The Read Status Register 1 command may be used to read the WIP bit
to determine when the device has completed the password unlock command or is ready to accept a new
password command. When a valid password is provided the password unlock command does not insert the
100 µs delay before returning the WIP bit to ‘0’.
• If the password is lost after selecting the Password Mode, there is no way to set the PPB Lock bit.
• ECC status may only be read from sectors that are readable. In read protection mode the addresses are forced
to the boot sector address. ECC status is shown in that sector while read protection mode is active.
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SPI Multi-I/O, 3.0V
Commands
11
Commands
All communication between the host system and S25FL128S and S25FL256S memory devices is in the form of
units called commands.
All commands begin with an instruction that selects the type of information transfer or device operation to be
performed. Commands may also have an address, instruction modifier, latency period, data transfer to the
memory, or data transfer from the memory. All instruction, address, and data information is transferred serially
between the host system and memory device.
All instructions are transferred from host to memory as a single bit serial sequence on the SI signal.
Single bit wide commands may provide an address or data sent only on the SI signal. Data may be sent back to
the host serially on SO signal.
Dual or Quad Output commands provide an address sent to the memory only on the SI signal. Data will be
returned to the host as a sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Dual or Quad Input/Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or,
four bit (nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1
or, four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Commands are structured as follows:
• Each command begins with an eight bit (byte) instruction.
• The instruction may be stand alone or may be followed by address bits to select a location within one of several
address spaces in the device. The address may be either a 24-bit or 32-bit byte boundary address.
• The Serial Peripheral Interface with Multiple IO provides the option for each transfer of address and data infor-
mation to be done one, two, or four bits in parallel. This enables a trade off between the number of signal
connections (IO bus width) and the speed of information transfer. If the host system can support a two or four
bit wide IO bus the memory performance can be increased by using the instructions that provide parallel two
bit (dual) or parallel four bit (Quad) transfers.
• The width of all transfers following the instruction are determined by the instruction sent.
• All single bits or parallel bit groups are transferred in most to least significant bit order.
• Some instructions send instruction modifier (mode) bits following the address to indicate that the next
command will be of the same type with an implied, rather than an explicit, instruction. The next command thus
does not provide an instruction byte, only a new address and mode bits. This reduces the time needed to send
each command when the same command type is repeated in a sequence of commands.
• The address or mode bits may be followed by write data to be stored in the memory device or by a read latency
period before read data is returned to the host.
• Read latency may be ‘0’ to several SCK cycles (also referred to as dummy cycles).
• All instruction, address, mode, and data information is transferred in byte granularity. Addresses are shifted
into the device with the most significant byte first. All data is transferred with the lowest address byte sent first.
Following bytes of data are sent in lowest to highest byte address order i.e., the byte address increments.
• All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations)
are ignored. The embedded operation will continue to execute without any affect. A very limited set of
commands are accepted during an embedded operation. These are discussed in the individual command
descriptions. While a program, erase, or write operation is in progress, it is recommended to check that the
Write-In Progress (WIP) bit is ‘0’ before issuing most commands to the device, to ensure the new command can
be accepted.
• Depending on the command, the time for execution varies. A command to read status information from an
executing command is available to determine when the command completes execution and whether the
command was successful.
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Commands
• Although host software in some cases is used to directly control the SPI interface signals, the hardware interfaces
of the host system and the memory device generally handle the details of signal relationships and timing. For
this reason, signal relationships and timing are not covered in detail within this software interface focused
section of the document. Instead, the focus is on the logical sequence of bits transferred in each command
rather than the signal timing and relationships. Following are some general signal relationship descriptions to
keep in mind. For additional information on the bit level format and signal timing relationships of commands,
see “Command protocol” on page 21.
- The host always controls the Chip Select (CS#), Serial Clock (SCK), and Serial Input (SI) - SI for single bit wide
transfers. The memory drives Serial Output (SO) for single bit read transfers. The host and memory alternately
drive the IO0-IO3 signals during Dual and Quad transfers.
- All commands begin with the host selecting the memory by driving CS# LOW before the first rising edge of
SCK. CS# is kept LOW throughout a command and when CS# is returned high the command ends. Generally,
CS# remains LOW for 8-bit transfer multiples to transfer byte granularity information. Some commands will
not be accepted if CS# is returned HIGH not at an 8-bit boundary.
11.1
Command set summary
Extended addressing
11.1.1
To accommodate addressing above 128 Mb, there are three options:
1. New instructions are provided with 4-byte address, used to access up to 32 Gb of memory.
Instruction name
4FAST_READ
4READ
Description
Read Fast (4-byte address)
Code (Hex)
0C
13
3C
6C
BC
EC
0E
BE
EE
12
34
21
DC
Read (4-byte address)
4DOR
4QOR
4DIOR
4QIOR
4DDRFR
4DDRDIOR
4DDRQIOR
4PP
Read Dual Out (4-byte address)
Read Quad Out (4-byte address)
Dual I/O Read (4-byte address)
Quad I/O Read (4-byte address)
Read DDR Fast (4-byte address)
DDR Dual I/O Read (4-byte address)
DDR Quad I/O Read (4-byte address)
Page Program (4-byte address)
Quad Page Program (4-byte address)
Parameter 4-KB Erase (4-byte address)
Erase 64/256 KB (4-byte address)
4QPP
4P4E
4SE
2. For backward compatibility to the 3-byte address instructions, the standard instructions can be used in
conjunction with the EXTADD Bit in the Bank Address Register (BAR[7]). By default BAR[7] is cleared to ‘0’
(following power up and hardware reset), to enable 3-byte (24-bit) addressing. When set to 1, the legacy
commands are changed to require 4 bytes (32 bits) for the address field. The following instructions can be used
in conjunction with EXTADD bit to switch from 3 bytes to 4 bytes of address field.
Instruction name
READ
Description
Read (3-byte address)
Code (Hex)
03
0B
3B
6B
BB
EB
FAST_READ
DOR
Read Fast (3-byte address)
Read Dual Out (3-byte address)
Read Quad Out (3-byte address)
Dual I/O Read (3-byte address)
Quad I/O Read (3-byte address)
QOR
DIOR
QIOR
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Commands
Instruction name
Description
Code (Hex)
DDRFR
DDRDIOR
DDRQIOR
PP
Read DDR Fast (3-byte address)
DDR Dual I/O Read (3-byte address)
DDR Quad I/O Read (3-byte address)
Page Program (3-byte address)
Quad Page Program (3-byte address)
Parameter 4-KB Erase (3-byte address)
Erase 64 / 256 KB (3-byte address)
0D
BD
ED
02
32
20
D8
QPP
P4E
SE
3. For backward compatibility to the 3-byte addressing, the standard instructions can be used in conjunction
with the Bank Address Register:
a.The BankAddress Register is used to switch between 128-Mb (16-MB) banks of memory, The standard
3-byte address selects an address within the bank selected by the Bank Address Register.
i. The host system writes the Bank Address Register to access beyond the first 128 Mb of memory.
ii. This applies to read, erase, and program commands.
a. The Bank Register provides the high order (4th) byte of address, which is used to address the available
memory at addresses greater than 16 MB.
a. Bank Register bits are volatile.
i. On power up, the default is Bank0 (the lowest address 16 MB).
a. For Read, the device will continuously transfer out data until the end of the array.
i. There is no bank to bank delay.
ii. The Bank Address Register is not updated.
iii. The Bank Address Register value is used only for the initial address of an access.
Table 47
Bank address map
Bank Address Register bits
Bank
Memory array address range (Hex)
Bit 1
Bit 0
0
0
0
1
0
1
00000000
01000000
00FFFFFF
01FFFFFF
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Commands
Table 48
Function
S25FL128S and S25FL256S command set (Sorted by function)
Instruction Maximum frequency
Command name
Command description
value (Hex)
(MHz)
Read Device READ_ID (REMS) Read Electronic Manufacturer
90
133
Identification
Signature
RDID
Read ID (JEDEC Manufacturer ID and
JEDEC CFI)
9F
133
RES
RDSR1
RDSR2
RDCR
WRR
Read Electronic Signature
Read Status Register-1
Read Status Register-2
Read Configuration Register-1
Write Register (Status-1,
Configuration-1)
AB
05
07
35
01
50
Register
Access
133
133
133
133
WRDI
WREN
CLSR
Write Disable
Write Enable
Clear Status Register-1 -
Erase/Program Fail Reset
04
06
30
133
133
133
ECCRD
ABRD
ECC Read (4-byte address)
AutoBoot Register Read
18
14
133
133 (QUAD=0)
104 (QUAD=1)
ABWR
BRRD
BRWR
BRAC
AutoBoot Register Write
Bank Register Read
Bank Register Write
Bank Register Access
(Legacy command formerly used for
Deep Power Down)
15
16
17
B9
133
133
133
133
DLPRD
PNVDLR
WVDLR
READ
Data Learning Pattern Read
41
43
4A
03
133
133
133
50
Program NV Data Learning Register
Write Volatile Data Learning Register
Read (3- or 4-byte address)
Read Flash
Array
Read Flash
Array
4READ
FAST_READ
4FAST_READ
DDRFR
4DDRFR
DOR
4DOR
QOR
4QOR
DIOR
4DIOR
DDRDIOR
Read (4-byte address)
Fast Read (3- or 4-byte address)
Fast Read (4-byte address)
13
0B
0C
0D
0E
3B
3C
6B
6C
BB
BC
BD
50
133
133
80
DDR Fast Read (3- or 4-byte address)
DDR Fast Read (4-byte address)
Read Dual Out (3- or 4-byte address)
Read Dual Out (4-byte address)
Read Quad Out (3- or 4-byte address)
Read Quad Out (4-byte address)
Dual I/O Read (3- or 4-byte address)
Dual I/O Read (4-byte address)
80
104
104
104
104
104
104
80
DDR Dual I/O Read (3- or 4-byte
address)
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Commands
Table 48
Function
S25FL128S and S25FL256S command set (Sorted by function) (continued)
Instruction Maximum frequency
Command name
Command description
value (Hex)
(MHz)
80
104
104
80
Read Flash
Array
4DDRDIOR
QIOR
4QIOR
DDR Dual I/O Read (4-byte address)
Quad I/O Read (3- or 4-byte address)
Quad I/O Read (4-byte address)
DDR Quad I/O Read (3- or 4-byte
address)
BE
EB
EC
ED
DDRQIOR
4DDRQIOR
PP
DDR Quad I/O Read (4-byte address)
Page Program (3- or 4-byte address)
Page Program (4-byte address)
Quad Page Program (3- or 4-byte
address)
EE
02
12
32
80
133
133
80
Program
Flash Array
4PP
QPP
QPP
Quad Page Program - Alternate
instruction (3- or 4-byte address)
38
80
4QPP
PGSP
PGRS
P4E
Quad Page Program (4-byte address)
Program Suspend
Program Resume
Parameter 4-KB, sector Erase (3- or
4-byte address)
34
85
8A
20
80
133
133
133
Erase Flash
Array
4P4E
Parameter 4-KB, sector Erase (4-byte
address)
21
133
BE
BE
SE
Bulk Erase
Bulk Erase (alternate command)
Erase 64 KB or 256 KB (3- or 4-byte
address)
60
C7
D8
133
133
133
4SE
Erase 64 KB or 256 KB (4-byte address)
Erase Suspend
Erase Resume
OTP Program
OTP Read
DC
75
7A
42
4B
133
133
133
133
133
ERSP
ERRS
OTPP
OTPR
One Time
Program
Array
Advanced
Sector
DYBRD
DYBWR
PPBRD
PPBP
PPBE
ASPRD
ASPP
PLBRD
PLBWR
PASSRD
PASSP
PASSU
DYB Read
DYB Write
PPB Read
PPB Program
PPB Erase
E0
E1
E2
E3
E4
2B
2F
A7
A6
E7
E8
E9
133
133
133
133
133
133
133
133
133
133
133
133
Protection
ASP Read
ASP Program
PPB Lock Bit Read
PPB Lock Bit Write
Password Read
Password Program
Password Unlock
Advanced
Sector
Protection
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SPI Multi-I/O, 3.0V
Commands
Table 48
Function
S25FL128S and S25FL256S command set (Sorted by function) (continued)
Instruction Maximum frequency
Command name
Command description
Software Reset
value (Hex)
(MHz)
133
133
Reset
RESET
MBR
F0
FF
A3
Mode Bit Reset
Reserved for
Future Use
MPM
Reserved for Multi-I/O-High Perf Mode
(MPM)
133
RFU
RFU
RFU
Reserved-18
Reserved-E5
Reserved-E6
Reserved
Reserved
Reserved
18
E5
E6
–
–
–
11.1.2
Read device identification
There are multiple commands to read information about the device manufacturer, device type, and device
features. SPI memories from different vendors have used different commands and formats for reading infor-
mation about the memories. The S25FL128S and S25FL256S devices support the three most common device
information commands.
11.1.3
Register read or write
There are multiple registers for reporting embedded operation status or controlling device configuration
options. There are commands for reading or writing these registers. Registers contain both volatile and
non-volatile bits. Non-volatile bits in registers are automatically erased and programmed as a single (write)
operation.
11.1.3.1
Monitoring operation status
The host system can determine when a write, program, erase, suspend or other embedded operation is complete
by monitoring the Write in Progress (WIP) bit in the Status Register. The Read from Status Register-1 command
provides the state of the WIP bit. The program error (P_ERR) and erase error (E_ERR) bits in the status register
indicate whether the most recent program or erase command has not completed successfully. When P_ERR or
E_ERR bits are set to one, the WIP bit will remain set to one indicating the device remains busy. Under this
condition, only the CLSR, WRDI, RDSR1, RDSR2, and software RESET commands are valid commands. A Clear
Status Register (CLSR) followed by a Write Disable (WRDI) command must be sent to return the device to standby
state. CLSR clears the WIP, P_ERR, and E_ERR bits. WRDI clears the WEL bit. Alternatively, Hardware Reset, or
Software Reset (RESET) may be used to return the device to standby state.
11.1.3.2
Configuration
There are commands to read, write, and protect registers that control interface path width, interface timing,
interface address length, and some aspects of data protection.
11.1.4
Read flash array
Data may be read from the memory starting at any byte boundary. Data bytes are sequentially read from incre-
mentally higher byte addresses until the host ends the data transfer by driving CS# input HIGH. If the byte address
reaches the maximum address of the memory array, the read will continue at address ‘0’ of the array.
There are several different read commands to specify different access latency and data path widths. Double Data
Rate (DDR) commands also define the address and data bit relationship to both SCK edges:
• The Read command provides a single address bit per SCK rising edge on the SI signal with read data returning
a single bit per SCK falling edge on the SO signal. This command has ‘0’ latency between the address and the
returning data but is limited to a maximum SCK rate of 50 MHz.
• Other read commands have a latency period between the address and returning data but can operate at higher
SCK frequencies. The latency depends on the configuration register latency code.
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
• The Fast Read command provides a single address bit per SCK rising edge on the SI signal with read data
returning a single bit per SCK falling edge on the SO signal and may operate up to 133 MHz.
• Dual or Quad Output read commands provide address a single bit per SCK rising edge on the SI / IO0 signal with
read data returning two bits, or four bits of data per SCK falling edge on the IO0-IO3 signals.
• Dual or Quad I/O Read commands provide address two bits or four bits per SCK rising edge with read data
returning two bits, or four bits of data per SCK falling edge on the IO0-IO3 signals.
• Fast (Single), Dual, or Quad Double Data Rate read commands provide address one bit, two bits or four bits per
every SCK edge with read data returning one bit, two bits, or four bits of data per every SCK edge on the IO0-IO3
signals. Double Data Rate (DDR) operation is only supported for core and I/O voltages of 3 to 3.6V.
11.1.5
Program flash array
Programming data requires two commands: Write Enable (WREN), and Page Program (PP or QPP). The Page
Program command accepts from 1-byte up to 256 or 512 consecutive bytes of data (page) to be programmed in
one operation. Programming means that bits can either be left at ‘1’, or programmed from ‘1’ to ‘0’. Changing bits
from ‘0’ to ‘1’ requires an erase operation.
11.1.6
Erase flash array
The Sector Erase (SE) and Bulk Erase (BE) commands set all the bits in a sector or the entire memory array to ‘1’.
A bit needs to be first erased to ‘1’ before programming can change it to a ‘0’. While bits can be individually
programmed from a ‘1’ to ‘0’, erasing bits from ‘0’ to ‘1’ must be done on a sector-wide (SE) or array-wide (BE)
level.
11.1.7
OTP, block protection, and advanced sector protection
There are commands to read and program a separate One Time Programmable (OTP) array for permanent data
such as a serial number. There are commands to control a contiguous group (block) of flash memory array sectors
that are protected from program and erase operations. There are commands to control which individual flash
memory array sectors are protected from program and erase operations.
11.1.8
Reset
There is a command to reset to the default conditions present after power on to the device. There is a command
to reset (exit from) the Enhanced Performance Read Modes.
11.1.9
Reserved
Some instructions are reserved for future use. In this generation of the S25FL128S and S25FL256S some of these
command instructions may be unused and not affect device operation, some may have undefined results.
Some commands are reserved to ensure that a legacy or alternate source device command is allowed without
affect. This allows legacy software to issue some commands that are not relevant for the current generation
S25FL128S and S25FL256S devices with the assurance these commands do not cause some unexpected action.
Some commands are reserved for use in special versions of the FL-S not addressed by this document or for a
future generation. This allows new host memory controller designs to plan the flexibility to issue these command
instructions. The command format is defined if known at the time this document revision is published.
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.2
Identification commands
11.2.1
Read Identification - REMS (Read_ID or REMS 90h)
The READ_ID command identifies the Device Manufacturer ID and the Device ID. The command is also referred to
as Read Electronic Manufacturer and device Signature (REMS). READ-ID (REMS) is only supported for backward
compatibility and should not be used for new software designs. New software designs should instead make use
of the RDID command.
The command is initiated by shifting on SI the instruction code “90h” followed by a 24-bit address of 00000h.
Following this, the Manufacturer ID and the Device ID are shifted out on SO starting at the falling edge of SCK after
address. The Manufacturer ID and the Device ID are always shifted out with the MSb first. If the 24-bit address is
set to 000001h, then the Device ID is read out first followed by the Manufacturer ID. The Manufacturer ID and
Device ID output data toggles between address 000000H and 000001H until terminated by a low to high transition
on CS# input. The maximum clock frequency for the READ_ID command is 133 MHz.
CS#
28 29 30 31
0
1
2
3
4
5
6
7
8
9
10
SCK
Instruction
90h
ADD (1)
23 22 21
MSb
3
2
1
0
SI
High Impedance
SO
CS
#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCK
SI
Device ID
Manufacture ID
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
MSb
MSb
Figure 45
Table 49
READ_ID command sequence
Read_ID values
Device
Manufacturer ID (Hex)
Device ID (Hex)
S25FL128S
01
17
01
18
S25FL256S
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.2.2
Read Identification (RDID 9Fh)
The Read Identification (RDID) command provides read access to manufacturer identification, device identifi-
cation, and Common Flash Interface (CFI) information. The manufacturer identification is assigned by JEDEC. The
CFI structure is defined by JEDEC standard. The device identification and CFI values are assigned by Infineon.
The JEDEC Common Flash Interface (CFI) specification defines a device information structure, which allows a
vendor-specified software flash management program (driver) to be used for entire families of flash devices.
Software support can then be device-independent, JEDEC manufacturer ID independent, forward and
backward-compatible for the specified flash device families. System vendors can standardize their flash drivers
for long-term software compatibility by using the CFI values to configure a family driver from the CFI information
of the device in use.
Any RDID command issued while a program, erase, or write cycle is in progress is ignored and has no effect on
execution of the program, erase, or write cycle that is in progress.
The RDID instruction is shifted on SI. After the last bit of the RDID instruction is shifted into the device, a byte of
manufacturer identification, two bytes of device identification, extended device identification, and CFI infor-
mation will be shifted sequentially out on SO. As a whole this information is referred to as ID-CFI. See “ID-CFI
address space” on page 49 for the detail description of the ID-CFI contents.
Continued shifting of output beyond the end of the defined ID-CFI address space will provide undefined data. The
RDID command sequence is terminated by driving CS# to the logic HIGH state anytime during data output.
The maximum clock frequency for the RDID command is 133 MHz.
C S#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
32
34
33
655
652 653 654
SC K
Instruction
SI
SO
Extended Device Information
Manufacturer / Device Identification
High Impedance
644
645
646
647
0
1
2
20
21
22
23
24
25
26
Figure 46
Read Identification (RDID) command sequence
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.2.3
Read Electronic Signature (RES) (ABh)
The RES command is used to read a single byte Electronic Signature from SO. RES is only supported for backward
compatibility and should not be used for new software designs. New software designs should instead make use
of the RDID command.
The RES instruction is shifted in followed by three dummy bytes onto SI. After the last bit of the three dummy
bytes are shifted into the device, a byte of Electronic Signature will be shifted out of SO. Each bit is shifted out by
the falling edge of SCK. The maximum clock frequency for the RES command is 50 MHz.
The Electronic Signature can be read repeatedly by applying multiples of eight clock cycles.
The RES command sequence is terminated by driving CS# to the logic HIGH state anytime during data output.
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCK
3 Dummy
Bytes
Instruction
23 22 21
MSb
3
2
1
0
SI
Electonic ID
High Impedance
7
6
5
4
3
2
1
0
SO
MSb
Figure 47
Table 50
Read Electronic Signature (RES) command sequence
RES values
Device
Device ID (Hex)
17
S25FL128S
18
S25FL256S
11.3
Register access commands
11.3.1
Read Status Register-1 (RDSR1 05h)
The Read Status Register-1 (RDSR1) command allows the Status Register-1 contents to be read from SO. The
Status Register-1 contents may be read at any time, even while a program, erase, or write operation is in progress.
It is possible to read the Status Register-1 continuously by providing multiples of eight clock cycles. The status is
updated for each eight cycle read. The maximum clock frequency for the RDSR1 (05h) command is 133 MHz.
CS
#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
Instruction
SI
Status Register-1 Out
Status Register-1 Out
High Impedance
7
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
SO
MSb
MSb
MSb
Figure 48
Read Status Register-1 (RDSR1) command sequence
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.3.2
Read Status Register-2 (RDSR2 07h)
The Read Status Register (RDSR2) command allows the Status Register-2 contents to be read from SO. The Status
Register-2 contents may be read at any time, even while a program, erase, or write operation is in progress. It is
possible to read the Status Register-2 continuously by providing multiples of eight clock cycles. The status is
updated for each eight cycle read. The maximum clock frequency for the RDSR2 command is 133 MHz.
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
Instruction
SI
7
6
5
4
3
2
1
0
Status Register-2 Out
Status Register-2 Out
High Impedance
7
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
SO
MSb
MSb
MSb
Figure 49
Read Status Register-2 (RDSR2) command
11.3.3
Read Configuration Register (RDCR 35h)
The Read Configuration Register (RDCR) command allows the Configuration Register contents to be read from
SO. It is possible to read the Configuration Register continuously by providing multiples of eight clock cycles. The
Configuration Register contents may be read at any time, even while a program, erase, or write operation is in
progress.
CS#
SCK
SI
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Phase
Instruction
Register Read
Repeat Register Read
Figure 50
Read Configuration Register (RDCR) command sequence
11.3.4
Bank Register Read (BRRD 16h)
The Read the Bank Register (BRRD) command allows the Bank address Register contents to be read from SO. The
instruction is first shifted in from SI. Then the 8-bit Bank Register is shifted out on SO. It is possible to read the
Bank Register continuously by providing multiples of eight clock cycles. The maximum operating clock frequency
for the BRRD command is 133 MHz.
CS#
0
11
22
33
44
55
66
77
88
99
1100
1111
1122
1133
14 15
1166
17 18
1199
2200
21 22
2233
SCK
Instruuccttiioonn
7
66
55
44
3
22
11
00
SI
MMSSBB
Bank Register OOut
55 4
Bank Regiisstteer OOuutt
55 4
High Impedance
7
66
3
22
11
00
SO
7
66
3
22
11
00
7
MSb
MSb
MSb
Figure 51
Read Bank Register (BRRD) command
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.3.5
Bank Register Write (BRWR 17h)
The Bank Register Write (BRWR) command is used to write address bits above A23, into the Bank Address Register
(BAR). The command is also used to write the Extended address control bit (EXTADD) that is also in BAR[7]. BAR
provides the high order addresses needed by devices having more than 128 Mb (16 MB), when using 3-byte
address commands without extended addressing enabled (BAR[7] EXTADD = 0). Because this command is part of
the addressing method and is not changing data in the flash memory, this command does not require the WREN
command to precede it.
The BRWR instruction is entered, followed by the data byte on SI. The Bank Register is one data byte in length.
The BRWR command has no effect on the P_ERR, E_ERR or WIP bits of the Status and Configuration Registers.
Any bank address bit reserved for the future should always be written as a ‘0’.
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13
Bank Register In
14
15
SCK
Instruction
SI
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
MSb
MSb
High Impedance
SO
Figure 52
Bank Register Write (BRWR) command
11.3.6
Bank Register Access (BRAC B9h)
The Bank Register Read and Write commands provide full access to the Bank Address Register (BAR) but they are
both commands that are not present in legacy SPI memory devices. Host system SPI memory controller inter-
faces may not be able to easily support such new commands. The Bank Register Access (BRAC) command uses
the same command code and format as the Deep Power Down (DPD) command that is available in legacy SPI
memories. The FL-S family does not support a DPD feature but assigns this legacy command code to the BRAC
command to enable write access to the Bank Address Register for legacy systems that are able to send the legacy
DPD (B9h) command.
When the BRAC command is sent, the FL-S family device will then interpret an immediately following Write
Register (WRR) command as a write to the lower address bits of the BAR. A WREN command is not used between
the BRAC and WRR commands. Only the lower two bits of the first data byte following the WRR command code
are used to load BAR[1:0]. The upper bits of that byte and the content of the optional WRR command second data
byte are ignored. Following the WRR command, the access to BAR is closed and the device interface returns to
the standby state. The combined BRAC followed by WRR command sequence has no affect on the value of the
ExtAdd bit (BAR[7]).
Commands other than WRR may immediately follow BRAC and execute normally. However, any command other
than WRR, or any other sequence in which CS# goes LOW and returns HIGH, following a BRAC command, will close
the access to BAR and return to the normal interpretation of a WRR command as a write to Status Register-1 and
the Configuration Register.
The BRAC + WRR sequence is allowed only when the device is in standby, program suspend, or erase suspend
states. This command sequence is illegal when the device is performing an embedded algorithm or when the
program (P_ERR) or erase (E_ERR) status bits are set to ‘1’.
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
1
2
3
4
5
6
7
SCK
Instruction
SI
7
6
5
4
3
2
1
0
MSb
High Impedance
SO
Figure 53
BRAC (B9h) command sequence
11.3.7
Write Registers (WRR 01h)
The Write Registers (WRR) command allows new values to be written to both the Status Register-1 and Configu-
ration Register. Before the Write Registers (WRR) command can be accepted by the device, a Write Enable (WREN)
command must be received. After the Write Enable (WREN) command has been decoded successfully, the device
will set the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The Write Registers (WRR) command is entered by shifting the instruction and the data bytes on SI. The Status
Register is one data byte in length.
The Write Registers (WRR) command will set the P_ERR or E_ERR bits if there is a failure in the WRR operation.
Any Status or Configuration Register bit reserved for the future must be written as a ‘0’.
CS# must be driven to the logic HIGH state after the eighth or sixteenth bit of data has been latched. If not, the
Write Registers (WRR) command is not executed. If CS# is driven HIGH after the eighth cycle then only the Status
Register-1 is written; otherwise, after the sixteenth cycle both the Status and Configuration Registers are written.
When the configuration register QUAD bit CR[1] is ‘1’, only the WRR command format with 16 data bits may be
used.
As soon as CS# is driven to the logic HIGH state, the self-timed Write Registers (WRR) operation is initiated. While
the Write Registers (WRR) operation is in progress, the Status Register may still be read to check the value of the
Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a ‘1’ during the self-timed Write Registers (WRR)
operation, and is a ‘0’ when it is completed. When the Write Registers (WRR) operation is completed, the Write
Enable Latch (WEL) is set to a ‘0’. The WRR command must be executed under continuous power. The maximum
clock frequency for the WRR command is 133 MHz.
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13
Status Register In
14 15
SCK
Instruction
SI
7
6
5
4
3
2
1
0
MSb
High Impedance
SO
Figure 54
Write Registers (WRR) command sequence – 8 data bits
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS
#
0
1
2
3
4
5
6
7
8
9
10 11 12 13
Status Register In
14
15
16 17 18 19 20 21
Configuration Register In
22
23
SCK
Instruction
7
6
5
4
3
2
1
0
SI
7
6
5
4
3
2
1
0
MSb
MSb
High Impedance
SO
Figure 55
Write Registers (WRR) command sequence – 16 data bits
The Write Registers (WRR) command allows the user to change the values of the Block Protect (BP2, BP1, and
BP0) bits to define the size of the area that is to be treated as read-only. The Write Registers (WRR) command also
allows the user to set the Status Register Write Disable (SRWD) bit to a ‘1’ or a ‘0’. The Status Register Write Disable
(SRWD) bit and Write Protect (WP#) signal allow the BP bits to be hardware protected.
When the Status Register Write Disable (SRWD) bit of the Status Register is a ‘0’ (its initial delivery state), it is
possible to write to the Status Register provided that the Write Enable Latch (WEL) bit has previously been set by
a Write Enable (WREN) command, regardless of the whether Write Protect (WP#) signal is driven to the logic HIGH
or logic LOW state.
When the Status Register Write Disable (SRWD) bit of the Status Register is set to a ‘1’, two cases need to be
considered, depending on the state of Write Protect (WP#):
• If Write Protect (WP#) signal is driven to the logic HIGH state, it is possible to write to the Status and Configuration
Registers provided that the Write Enable Latch (WEL) bit has previously been set to a ‘1’ by initiating a Write
Enable (WREN) command.
• If Write Protect (WP#) signal is driven to the logic LOW state, it is not possible to write to the Status and Config-
uration Registers even if the Write Enable Latch (WEL) bit has previously been set to a ‘1’ by a Write Enable
(WREN) command. Attempts to write to the Status and Configuration Registers are rejected, and are not
accepted for execution. As a consequence, all the data bytes in the memory area that are protected by the Block
Protect (BP2, BP1, BP0) bits of the Status Register, are also hardware protected by WP#.
The WP# hardware protection can be provided:
• by setting the Status Register Write Disable (SRWD) bit after driving Write Protect (WP#) signal to the logic LOW
state;
• or by driving Write Protect (WP#) signal to the logic LOW state after setting the Status Register Write Disable
(SRWD) bit to a ‘1’.
The only way to release the hardware protection is to pull the Write Protect (WP#) signal to the logic HIGH state.
If WP# is permanently tied HIGH, hardware protection of the BP bits can never be activated.
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SPI Multi-I/O, 3.0V
Commands
Table 51
Block Protection modes
Memory content
SRWD
WP#
Mode
Write Protection of Registers
bit
Protected area
Protected against
Unprotected area
Ready to accept
1
1
0
1
0
0
Software Status and Configuration Registers
Protected are Writable (if WREN command has Page Program, Quad Page Program, Quad
set the WEL bit). The values in the
SRWD, BP2, BP1, and BP0 bits and
those in the Configuration Register
can be changed.
Input Program, Sector Input Program and
Erase, and Bulk Erase Sector Erase
commands
0
1
Hardware Status and Configuration Registers
Protected are Hardware Write Protected. The
Protected against
Ready to accept
Page Program, Sector Page Program or
values in the SRWD, BP2, BP1, andBP0 Erase, and Bulk Erase Erase commands
bits and those in the Configuration
Register cannot be changed.
Notes
52. The Status Register originally shows 00h when the device is first shipped from Infineon to the customer.
53. Hardware protection is disabled when Quad Mode is enabled (QUAD bit = 1 in Configuration Register). WP#
becomes IO2; therefore, it cannot be utilized.
The WRR command has an alternate function of loading the Bank Address Register if the command immediately
follows a BRAC command. See “Bank Register Access (BRAC B9h)” on page 80.
11.3.8
Write Enable (WREN 06h)
The Write Enable (WREN) command sets the Write Enable Latch (WEL) bit of the Status Register 1 (SR1[1]) to a ‘1’.
The Write Enable Latch (WEL) bit must be set to a ‘1’ by issuing the Write Enable (WREN) command to enable write,
program and erase commands.
CS# must be driven into the logic HIGH state after the eighth bit of the instruction byte has been latched in on SI.
Without CS# being driven to the logic HIGH state after the eighth bit of the instruction byte has been latched in
on SI, the write enable operation will not be executed.
CS#
0
1
2
3
4
5
6
7
SCK
SI
Instruction
Figure 56
Write Enable (WREN) command sequence
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.3.9
Write Disable (WRDI 04h)
The Write Disable (WRDI) command sets the Write Enable Latch (WEL) bit of the Status Register-1 (SR1[1]) to a ‘0’.
The Write Enable Latch (WEL) bit may be set to a ‘0’ by issuing the Write Disable (WRDI) command to disable Page
Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Registers (WRR), OTP Program (OTPP), and other
commands, that require WEL be set to ‘1’ for execution. The WRDI command can be used by the user to protect
memory areas against inadvertent writes that can possibly corrupt the contents of the memory. The WRDI
command is ignored during an embedded operation while WIP bit =1.
CS# must be driven into the logic HIGH state after the eighth bit of the instruction byte has been latched in on SI.
Without CS# being driven to the logic HIGH state after the eighth bit of the instruction byte has been latched in
on SI, the write disable operation will not be executed.
CS#
0
1
2
3
4
5
6
7
SCK
SI
Instruction
Figure 57
Write Disable (WRDI) command sequence
11.3.10
Clear Status Register (CLSR 30h)
The Clear Status Register command resets bit SR1[5] (Erase Fail Flag) and bit SR1[6] (Program Fail Flag). It is not
necessary to set the WEL bit before the Clear SR command is executed. The Clear SR command will be accepted
even when the device remains busy with WIP set to 1, as the device does remain busy when either error bit is set.
The WEL bit will be unchanged after this command is executed.
CS#
0
1
2
3
4
5
6
7
SCK
SI
Instruction
Figure 58
Clear Status Register (CLSR) command sequence
Datasheet
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.3.11
ECC Status Register Read (ECCRD 18h)
To read the ECC Status Register, the command is followed by the ECC unit (32 bit) address, the four least signif-
icant bits (LSb) of address must be set to ‘0’. This is followed by eight dummy cycles. Then the 8-bit contents of
the ECC Register, for the ECC unit selected, are shifted out on SO 16 times, once for each byte in the ECC Unit. If
CS# remains LOW, the next ECC unit status is sent through SO 16 times, once for each byte in the ECC Unit, this
continues until CS# goes HIGH. The maximum operating clock frequency for the ECC READ command is 133 MHz.
See “Automatic ECC” on page 106 for details on ECC unit.
CS#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
SCK
32-Bit
Address
Instruction
Dummy Byte
SI
7
6
5
4
3
2
1
0
31 30 29
3
2
1
0
7
6
5
4
3
2
1
0
DATA OUT 1
DATA OUT 2
High Impedance
SO
7
6
5
4
3
2
1
0
7
MSb
MSb
Figure 59
ECC Status Register Read command sequence
11.3.12
AutoBoot
SPI devices normally require 32 or more cycles of command and address shifting to initiate a read command. And,
in order to read boot code from an SPI device, the host memory controller or processor must supply the read
command from a hardwired state machine or from some host processor internal ROM code.
Parallel NOR devices need only an initial address, supplied in parallel in a single cycle, and initial access time to
start reading boot code.
The AutoBoot feature allows the host memory controller to take boot code from an S25FL128S and S25FL256S
device immediately after the end of reset, without having to send a read command. This saves 32 or more cycles
and simplifies the logic needed to initiate the reading of boot code.
• As part of the power up reset, hardware reset, or command reset process the AutoBoot feature automatically
starts a read access from a pre-specified address. At the time the reset process is completed, the device is ready
to deliver code from the starting address. The host memory controller only needs to drive CS# signal from HIGH
to LOW and begin toggling the SCK signal. The S25FL128S and S25FL256S device will delay code output for a
pre-specified number of clock cycles before code streams out.
- The Auto Boot Start Delay (ABSD) field of the AutoBoot register specifies the initial delay if any is needed by
the host.
- The host cannot send commands during this time.
If ABSD = 0, the maximum SCK frequency is 50 MHz.
- If ABSD > 0, the maximum SCK frequency is 133 MHz if the QUAD bit CR1[1] is ‘0’ or 104 MHz if the QUAD bit is
set to ‘1’.
• The starting address of the boot code is selected by the value programmed into the AutoBoot Start Address
(ABSA) field of the AutoBoot Register which specifies a 512-byte boundary aligned location; the default address
is 00000000h.
- Data will continuously shift out until CS# returns HIGH.
• At any point after the first data byte is transferred, when CS# returns HIGH, the SPI device will reset to standard
SPI mode; able to accept normal command operations.
- A minimum of one byte must be transferred.
- AutoBoot mode will not initiate again until another power cycle or a reset occurs.
• An AutoBoot Enable bit (ABE) is set to enable the AutoBoot feature.
Datasheet
85
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
The AutoBoot register bits are non-volatile and provide:
• The starting address (512-byte boundary), set by the AutoBoot Start Address (ABSA). The size of the ABSA field
is 23-bits for devices up to 32-Gb.
• The number of initial delay cycles, set by the AutoBoot Start Delay (ABSD) 8-bit count value.
• The AutoBoot Enable.
If the configuration register QUAD bit CR1[1] is set to 1, the boot code will be provided 4 bits per cycle in the same
manner as a Read Quad Out command. If the QUAD bit is ‘0’ the code is delivered serially in the same manner as
a Read command.
CS#
0
-
-
-
-
-
-
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9
SCK
Wait State
tWS
Don’t Care or High Impedance
SI
DATA OUT 1
DATA OUT 2
High Impedance
7
6
5
4
3
2
1
0
7
SO
MSb
MSb
Figure 60
AutoBoot sequence (CR1[1] = 0)
CS#
0
-
-
-
-
-
-
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9
SCK
IO0
Wait State
tWS
High Impedance
4
0
4
0
4
0
4
0
4
DATA OUT 1
High Impedance
High Impedance
5
6
1
2
5
6
1
5
1
5
6
1
2
5
6
IO1
IO2
2
6
2
High Impedance
IO3
7
3
7
3
7
3
7
3
7
MSb
Figure 61
AutoBoot sequence (CR1[1] = 1)
Datasheet
86
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.3.13
AutoBoot Register Read (ABRD 14h)
The AutoBoot Register Read command is shifted into SI. Then the 32-bit AutoBoot Register is shifted out on SO,
least significant byte first, most significant bit of each byte first. It is possible to read the AutoBoot Register contin-
uously by providing multiples of 32 clock cycles. If the QUAD bit CR1[1] is cleared to 0, the maximum operating
clock frequency for ABRD command is 133 MHz. If the QUAD bit CR1[1] is set to 1, the maximum operating clock
frequency for ABRD command is 104 MHz.
CS#
0
1
2
3
4
5
6
7
8
9
10 11
37 38 39 40
SCK
Instruction
SI
7
6
5
4
3
2
1
0
MSb
AutoBoot Register
26 25 24
High Impedance
7
7
6
5
4
SO
MSb
MSb
Figure 62
AutoBoot Register Read (ABRD) command
11.3.14
AutoBoot Register Write (ABWR 15h)
Before the ABWR command can be accepted, a Write Enable (WREN) command must be issued and decoded by
the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The ABWR command is entered by shifting the instruction and the data bytes on SI, least significant byte first,
most significant bit of each byte first. The ABWR data is 32-bits in length.
The ABWR command has status reported in Status Register-1 as both an erase and a programming operation. An
E_ERR or a P_ERR may be set depending on whether the erase or programming phase of updating the register
fails.
CS# must be driven to the logic HIGH state after the 32nd bit of data has been latched. If not, the ABWR command
is not executed. As soon as CS# is driven to the logic HIGH state, the self-timed ABWR operation is initiated. While
the ABWR operation is in progress, Status Register-1 may be read to check the value of the Write-In Progress (WIP)
bit. The Write-In Progress (WIP) bit is a ‘1’ during the self-timed ABWR operation, and is a ‘0’. when it is completed.
When the ABWR cycle is completed, the Write Enable Latch (WEL) is set to a ‘0’. The maximum clock frequency for
the ABWR command is 133 MHz.
CS#
0
1
2
3
4
5
6
7
8
9
10
36 37
38
39
SCK
Instruction
AutoBoot Register
SI
7
6
5
4
3
2
1
0
7
6
5
27
26
25
24
MSb
MSb
High Impedance
SO
Figure 63
AutoBoot Register Write (ABWR) command
Datasheet
87
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.3.15
Program NVDLR (PNVDLR 43h)
Before the Program NVDLR (PNVDLR) command can be accepted by the device, a Write Enable (WREN) command
must be issued and decoded by the device. After the Write Enable (WREN) command has been decoded success-
fully, the device will set the Write Enable Latch (WEL) to enable the PNVDLR operation.
The PNVDLR command is entered by shifting the instruction and the data byte on SI.
CS# must be driven to the logic HIGH state after the eighth (8th) bit of data has been latched. If not, the PNVDLR
command is not executed. As soon as CS# is driven to the logic HIGH state, the self-timed PNVDLR operation is
initiated. While the PNVDLR operation is in progress, the Status Register may be read to check the value of the
Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a ‘1’ during the self-timed PNVDLR cycle, and is a ‘0’.
when it is completed. The PNVDLR operation can report a program error in the P_ERR bit of the status register.
When the PNVDLR operation is completed, the Write Enable Latch (WEL) is set to a ‘0’ The maximum clock
frequency for the PNVDLR command is 133 MHz.
CS
#
0
1
2
3
4
5
6
7
8
9
10
12
13
14
15
11
SCK
Instruction
Data Learning Pattern
SI
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
MSb
MSb
High Im pedance
SO
Figure 64
Program NVDLR (PNVDLR) command sequence
11.3.16
Write VDLR (WVDLR 4Ah)
Before the Write VDLR (WVDLR) command can be accepted by the device, a Write Enable (WREN) command must
be issued and decoded by the device. After the Write Enable (WREN) command has been decoded successfully,
the device will set the Write Enable Latch (WEL) to enable WVDLR operation.
The WVDLR command is entered by shifting the instruction and the data byte on SI.
CS# must be driven to the logic HIGH state after the eighth (8th) bit of data has been latched. If not, the WVDLR
command is not executed. As soon as CS# is driven to the logic HIGH state, the WVDLR operation is initiated with
no delays. The maximum clock frequency for the PNVDLR command is 133 MHz.
CS#
0
1
2
3
4
5
6
7
8
9
10
12 13
14
15
11
SCK
Instruction
Data Learning Pattern
SI
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
MSb
MSb
High Impedance
SO
Figure 65
Write VDLR (WVDLR) command sequence
Datasheet
88
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.3.17
Data Learning Pattern Read (DLPRD 41h)
The instruction is shifted on SI, then the 8-bit DLP is shifted out on SO. It is possible to read the DLP continuously
by providing multiples of eight clock cycles. The maximum operating clock frequency for the DLPRD command
is 133 MHz.
CS#
0
1
2
3
4
5
6
7
8
9
10
12 13
14
15
16 17 18
20 21
22
23
11
19
SCK
Instruction
Data Learning Pattern
Data Learning Pattern
SI
7
6
5
4
3
2
1
0
MSb
High Impedance
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
SO
MSb
MSb
Figure 66
DLP Read (DLPRD) command sequence
11.4
Read memory array commands
Read commands for the main flash array provide many options for prior generation SPI compatibility or
enhanced performance SPI:
• Some commands transfer address or data on each rising edge of SCK. These are called Single Data Rate
commands (SDR).
• Some SDR commands transfer address one bit per rising edge of SCK and return data 1-, 2-, or 4-bits of data per
rising edge of SCK. These are called Read or Fast Read for 1-bit data; Dual Output Read for 2-bit data, and Quad
Output for 4-bit data.
• Some SDR commands transfer both address and data 2- or 4-bits per rising edge of SCK. These are called Dual
I/O for 2-bit and Quad I/O for 4-bit.
• Some commands transfer address and data on both the rising edge and falling edge of SCK. These are called
Double Data Rate (DDR) commands.
• There are DDR commands for 1-, 2-, or 4-bits of address or data per SCK edge. These are called Fast DDR for
1-bit, Dual I/O DDR for 2-bit, and Quad I/O DDR for 4-bit per edge transfer.
All of these commands begin with an instruction code that is transferred one bit per SCK rising edge. The
instruction is followed by either a 3- or 4-byte address transferred at SDR or DDR. Commands transferring address
or data 2- or 4-bits per clock edge are called Multiple I/O (MIO) commands. For FL-S devices at 256 Mb or higher
density, the traditional SPI 3-byte addresses are unable to directly address all locations in the memory array.
These device have a bank address register that is used with 3-byte address commands to supply the high order
address bits beyond the address from the host system. The default bank address is ‘0’. Commands are provided
to load and read the bank address register. These devices may also be configured to take a 4-byte address from
the host system with the traditional 3-byte address commands. The 4-byte address mode for traditional
commands is activated by setting the External Address (EXTADD) bit in the bank address register to ‘1’. In the
FL128S, higher order address bits above A23 in the 4-byte address commands, commands using Extended
Address mode, and the Bank Address Register are not relevant and are ignored because the flash array is only
128 Mb in size.
The Quad I/O commands provide a performance improvement option controlled by mode bits that are sent
following the address bits. The mode bits indicate whether the command following the end of the current read
will be another read of the same type, without an instruction at the beginning of the read. These mode bits give
the option to eliminate the instruction cycles when doing a series of Quad I/O read accesses.
Datasheet
89
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
A device ordering option provides an enhanced high performance option by adding a similar mode bit scheme
to the DDR Fast Read, Dual I/O, and Dual I/O DDR commands, in addition to the Quad I/O command.
Some commands require delay cycles following the address or mode bits to allow time to access the memory
array. The delay cycles are traditionally called dummy cycles. The dummy cycles are ignored by the memory thus
any data provided by the host during these cycles is “don’t care” and the host may also leave the SI signal at high
impedance during the dummy cycles. When MIO commands are used the host must stop driving the IO signals
(outputs are high impedance) before the end of last dummy cycle. When DDR commands are used the host must
not drive the I/O signals during any dummy cycle. The number of dummy cycles varies with the SCK frequency or
performance option selected via the Configuration Register 1 (CR1) Latency Code (LC). Dummy cycles are
measured from SCK falling edge to next SCK falling edge. SPI outputs are traditionally driven to a new value on
the falling edge of each SCK. Zero dummy cycles means the returning data is driven by the memory on the same
falling edge of SCK that the host stops driving address or mode bits.
The DDR commands may optionally have an 8-edge Data Learning Pattern (DLP) driven by the memory, on all
data outputs, in the dummy cycles immediately before the start of data. The DLP can help the host memory
controller determine the phase shift from SCK to data edges so that the memory controller can capture data at
the center of the data eye.
When using SDR I/O commands at higher SCK frequencies (>50 MHz), an LC that provides ‘1’ or more dummy
cycles should be selected to allow additional time for the host to stop driving before the memory starts driving
data, to minimize I/O driver conflict. When using DDR I/O commands with the DLP enabled, an LC that provides
5 or more dummy cycles should be selected to allow ‘1’ cycle of additional time for the host to stop driving before
the memory starts driving the 4 cycle DLP.
Each read command ends when CS# is returned HIGH at any point during data return. CS# must not be returned
HIGH during the mode or dummy cycles before data returns as this may cause mode bits to be captured incor-
rectly; making it indeterminate as to whether the device remains in enhanced high performance read mode.
11.4.1
Read (Read 03h or 4READ 13h)
The instruction
• 03h (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• 03h (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• 13h is followed by a 4-byte address (A31-A0)
Then the memory contents, at the address given, are shifted out on SO. The maximum operating clock frequency
for the READ command is 50 MHz.
The address can start at any byte location of the memory array. The address is automatically incremented to the
next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore
be read out with one single read instruction and address 000000h provided. When the highest address is reached,
the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued
indefinitely.
CS
#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCK
24-Bit
Address
Instruction
23 22 21
3
2
1
0
SI
DATA OUT 1
DATA OUT 2
High Impedance
7
6
5
4
3
2
1
0
7
SO
MSb
MSb
Figure 67
Read command sequence (3-byte address, 03h [ExtAdd = 0])
Datasheet
90
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47
SCK
32-Bit
Address
Instruction
31 30 29
3
2
1
0
SI
DATA OUT 1
DATA OUT 2
High Impedance
7
6
5
4
3
2
1
0
7
SO
MSb
MSb
Figure 68
Read command sequence (4-byte address, 13h or 03h [ExtAdd = 1])
11.4.2
Fast Read (FAST_READ 0Bh or 4FAST_READ 0Ch)
The instruction
• 0Bh (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• 0Bh (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• 0Ch is followed by a 4-byte address (A31-A0)
The address is followed by zero or eight dummy cycles depending on the latency code set in the Configuration
Register. The dummy cycles allow the device internal circuits additional time for accessing the initial address
location. During the dummy cycles the data value on SO is “don’t care” and may be high impedance. Then the
memory contents, at the address given, are shifted out on SO.
The maximum operating clock frequency for FAST READ command is 133 MHz.
The address can start at any byte location of the memory array. The address is automatically incremented to the
next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore
be read out with one single read instruction and address 000000h provided. When the highest address is reached,
the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued
indefinitely.
CS
#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCK
24-Bit
Address
Instruction
Dummy Byte
SI
23 22 21
3
2
1
0
7
6
5
4
3
2
1
0
DATA OUT 1
DATA OUT 2
High Impedance
SO
7
6
5
4
3
2
1
0
7
MSb
MSb
Figure 69
Fast Read (FAST_READ) command sequence (3-byte address, 0Bh [ExtAdd = 0, LC = 10b])
Datasheet
91
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS
#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
SCK
32-Bit
Address
Instruction
Dummy Byte
SI
31 30 29
3
2
1
0
7
6
5
4
3
2
1
0
DATA OUT 1
DATA OUT 2
High Impedance
SO
7
6
5
4
3
2
1
0
7
MSb
MSb
Figure 70
Fast Read command sequence (4-byte Address, 0Ch or 0B [ExtAdd=1], LC=10b)
CS#
SCK
0
7
1
6
2
5
3
4
5
2
6
1
7
0
8
38
39
0
40
41
42
43
44
45
46
47
48
49
Instruction
32 Bit Address
1
Data 1
Data 2
SI
4
3
31
SO
7
6
5
4
3
2
1
0
7
6
Figure 71
Fast Read command sequence (4-byte address, 0Ch or 0B [ExtAdd = 1], LC = 11b)
11.4.3
Dual Output Read (DOR 3Bh or 4DOR 3Ch)
The instruction
• 3Bh (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• 3Bh (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• 3Ch is followed by a 4-byte address (A31-A0)
Then the memory contents, at the address given, is shifted out two bits at a time through IO0 (SI) and IO1 (SO).
Two bits are shifted out at the SCK frequency by the falling edge of the SCK signal.
The maximum operating clock frequency for the Dual Output Read command is 104 MHz. For Dual Output Read
commands, there are zero or eight dummy cycles required after the last address bit is shifted into SI before data
begins shifting out of IO0 and IO1. This latency period (i.e., dummy cycles) allows the device’s internal circuitry
enough time to read from the initial address. During the dummy cycles, the data value on SI is a “don’t care” and
may be high impedance. The number of dummy cycles is determined by the frequency of SCK (see Table 28).
The address can start at any byte location of the memory array. The address is automatically incremented to the
next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore
be read out with one single read instruction and address 000000h provided. When the highest address is reached,
the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued
indefinitely.
CS#
SCK
IO0
IO1
7
6
5
4
3
2
1
0
23 22 21
Address
0
6
7
4
5
2
3
0
1
6
7
4
5
2
3
0
1
Phase
Instruction
8 Dummy Cycles
Data 1
Data 2
Figure 72
Dual Output Read command sequence (3-byte address, 3Bh [ExtAdd = 0], LC = 10b)
Datasheet
92
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
SCK
IO0
IO1
7
6
5
4
3
2
1
0
31 30 29
Address
0
6
7
4
5
2
3
0
1
6
7
4
5
2
3
0
1
Phase
Instruction
8 Dummy Cycles
Data 1
Data 2
Figure 73
Dual Output Read command sequence (4-byte address, 3Ch or 3Bh [ExtAdd = 1, LC = 10b])
CS#
SCK
IO0
IO1
7
6
5
4
3
2
1
0
31 30 29
Address
0
6
7
4
5
2
3
0
1
6
7
4
5
2
3
0
1
Phase
Instruction
Data 1
Data 2
Figure 74
Dual Output Read command sequence (4-byte address, 3Ch or 3Bh [ExtAdd = 1, LC = 11b])
11.4.4
Quad Output Read (QOR 6Bh or 4QOR 6Ch)
The instruction
• 6Bh (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• 6Bh (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• 6Ch is followed by a 4-byte address (A31-A0)
Then the memory contents, at the address given, is shifted out four bits at a time through IO0-IO3. Each nibble
(4-bits) is shifted out at the SCK frequency by the falling edge of the SCK signal.
The maximum operating clock frequency for Quad Output Read command is 104 MHz. For Quad Output Read
mode, there may be dummy cycles required after the last address bit is shifted into SI before data begins shifting
out of IO0-IO3. This latency period (i.e., dummy cycles) allows the device’s internal circuitry enough time to set
up for the initial address. During the dummy cycles, the data value on IO0-IO3 is a “don’t care” and may be high
impedance. The number of dummy cycles is determined by the frequency of SCK (see Table 28).
The address can start at any byte location of the memory array. The address is automatically incremented to the
next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore
be read out with one single read instruction and address 000000h provided. When the highest address is reached,
the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued
indefinitely.
The QUAD bit of Configuration Register must be set (CR Bit1=1) to enable the Quad mode capability.
Datasheet
93
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
7
1
6
2
5
3
4
5
2
6
1
7
0
8
30 31 32 33 34 35 36 37 38 39 40 41 42 43
SCK
Instruction
24 Bit Address
23
8 Dummy Cycles
Data 1
Data 2
IO0
IO1
IO2
IO3
4
3
1
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
Figure 75
Quad Output Read command sequence (3-byte address, 6Bh [ExtAdd = 0, LC = 01b])
CS#
SCK
0
1
6
2
5
3
4
5
2
6
1
7
0
8
38 39 40 41 42 43 44 45 46 47 48 49 50 51
Instruction
32 Bit Address
31
8 Dummy Cycles
Data 1
Data 2
IO0
IO1
7
4
3
1
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
IO2
IO3
Figure 76
Quad Output Read command sequence (4-byte address, 6Ch or 6Bh [ExtAdd = 1, LC = 01b])
CS#
SCK
0
7
1
6
2
5
3
4
5
2
6
1
7
0
8
38 39 40 41 42 43 44 45 46 47
Instruction
32 Bit Address
1
Data 1
Data 2
Data 3
Data 3
IO0
IO1
IO2
IO3
4
3
31
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
Figure 77
Quad Output Read command sequence (4-byte address, 6Ch or 6Bh [ExtAdd = 1], LC = 11b)
Datasheet
94
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.4.5
Dual I/O Read (DIOR BBh or 4DIOR BCh)
The instruction
• BBh (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• BBh (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• BCh is followed by a 4-byte address (A31-A0)
The Dual I/O Read commands improve throughput with two I/O signals — IO0 (SI) and IO1 (SO). It is similar to the
Dual Output Read command but takes input of the address two bits per SCK rising edge. In some applications,
the reduced address input time might allow for code execution in place (XIP) i.e. directly from the memory device.
The maximum operating clock frequency for Dual I/O Read is 104 MHz.
For the Dual I/O Read command, there is a latency required after the last address bits are shifted into SI and SO
before data begins shifting out of IO0 and IO1. There are different ordering part numbers that select the latency
code table used for this command, either the High Performance LC (HPLC) table (see Table 26) or the Enhanced
High Performance LC (EHPLC) table (see Table 28). The HPLC table does not provide cycles for mode bits so each
Dual I/O Read command starts with the 8 bit instruction, followed by address, followed by a latency period.
This latency period (dummy cycles) allows the device internal circuitry enough time to access data at the initial
address. During the dummy cycles, the data value on SI and SO are “don’t care” and may be high impedance. The
number of dummy cycles is determined by the frequency of SCK (see Table 28). The number of dummy cycles is
set by the LC bits in the Configuration Register (CR1).
The EHPLC table does provide cycles for mode bits so a series of Dual I/O Read commands may eliminate the 8-bit
instruction after the first Dual I/O Read command sends a mode bit pattern of Axh that indicates the following
command will also be a Dual I/O Read command. The first Dual I/O Read command in a series starts with the 8-bit
instruction, followed by address, followed by four cycles of mode bits, followed by a latency period. If the mode
bit pattern is Axh the next command is assumed to be an additional Dual I/O Read command that does not
provide instruction bits. That command starts with address, followed by mode bits, followed by latency.
The Enhanced High Performance feature removes the need for the instruction sequence and greatly improves
code execution (XIP). The upper nibble (bits 7-4) of the Mode bits control the length of the next Dual I/O Read
command through the inclusion or exclusion of the first byte instruction code. The lower nibble (bits 3-0) of the
Mode bits are “don’t care” (“x”) and may be high impedance. If the Mode bits equal Axh, then the device remains
in Dual I/O Enhanced High Performance Read Mode and the next address can be entered (after CS# is raised high
and then asserted LOW) without the BBh or BCh instruction, as shown in Figure 81; thus, eliminating eight cycles
for the command sequence. The following sequence will release the device from Dual I/O Enhanced High Perfor-
mance Read mode; after which, the device can accept standard SPI commands:
• During the Dual I/O Enhanced High Performance Command Sequence, if the Mode bits are any value other than
Axh, then the next time CS# is raised HIGH the device will be released from Dual I/O Read Enhanced High Perfor-
mance Read mode.
During any operation, if CS# toggles HIGH to LOW to high for eight cycles (or less) and data input (IO0 and IO1)
are not set for a valid instruction sequence, then the device will be released from Dual I/O Enhanced High Perfor-
mance Read mode. Note that the four mode bit cycles are part of the device’s internal circuitry latency time to
access the initial address after the last address cycle that is clocked into IO0 (SI) and IO1 (SO).
It is important that the I/O signals be set to high-impedance at or before the falling edge of the first data out clock.
At higher clock speeds the time available to turn off the host outputs before the memory device begins to drive
(bus turn around) is diminished. It is allowed and may be helpful in preventing I/O signal contention, for the host
system to turn off the I/O signal outputs (make them high impedance) during the last two “don’t care” mode
cycles or during any dummy cycles.
Following the latency period the memory content, at the address given, is shifted out two bits at a time through
IO0 (SI) and IO1 (SO). Two bits are shifted out at the SCK frequency at the falling edge of SCK signal.
The address can start at any byte location of the memory array. The address is automatically incremented to the
next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore
be read out with one single read instruction and address 000000h provided. When the highest address is reached,
the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued
indefinitely.
Datasheet
95
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS# should not be driven HIGH during mode or dummy bits as this may make the mode bits indeterminate.
CS#
SCK
IO0
IO1
7
6
5
4
3
2
1
0
22 20 18
23 21 19
Address
0
1
6
7
4
5
2
3
0
1
6
7
4
5
2
3
0
1
Phase
Instruction
4 Dummy
Data 1
Data 2
Figure 78
Dual I/O Read command sequence (3-byte address, BBh [ExtAdd = 0], HPLC = 00b)
CS#
SCK
IO0
IO1
7
6
5
4
3
2
1
0
30 28 26
31 29 27
Address
0
1
6
7
4
5
2
3
0
1
6
7
4
5
2
3
0
1
Phase
Instruction
6 Dummy
Data 1
Data 2
Figure 79
Dual I/O Read command sequence (4-byte address, BBh [ExtAdd = 1], HPLC = 10b)
CS#
SCK
0
7
1
6
2
5
3
4
5
2
6
1
7
0
8
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
8 cycles
Instruction
16 cycles
32 Bit Address
4 cycles
Mode
2 cycles
Dummy
4 cycles
Data 1
Data 2
2
4
0
1
IO0
IO1
4
3
30
31
2
3
0
1
6
7
6
7
4
5
2
3
0
1
6
7
4
5
2
3
3
5
Figure 80
Dual I/O Read command sequence (4-byte address, BCh or BBh [ExtAdd = 1], EHPLC = 10b)
CS#
SCK
0
14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
4 cycles
Data N
16 cycles
32 Bit Address
4 cycles
Mode
2 cycles
Dummy
4 cycles
Data 1
4 cycles
Data 2
2
4
0
1
IO0
IO1
6
4
5
2
0
1
30
31
2
3
0
1
6
7
6
7
4
5
2
3
0
1
6
7
4
5
2
3
3
5
7
3
Figure 81
Continuous Dual I/O Read command sequence (4-byte address, BCh or BBh [ExtAdd = 1],
EHPLC = 10b)
Datasheet
96
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.4.6
Quad I/O Read (QIOR EBh or 4QIOR ECh)
The instruction
• EBh (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• EBh (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• ECh is followed by a 4-byte address (A31-A0)
The Quad I/O Read command improves throughput with four I/O signals — IO0-IO3. It is similar to the Quad
Output Read command but allows input of the address bits four bits per serial SCK clock. In some applications,
the reduced instruction overhead might allow for code execution (XIP) directly from S25FL128S and S25FL256S
devices. The QUAD bit of the Configuration Register must be set (CR Bit1=1) to enable the Quad capability of
S25FL128S and S25FL256S devices.
The maximum operating clock frequency for Quad I/O Read is 104 MHz.
For the Quad I/O Read command, there is a latency required after the mode bits (described below) before data
begins shifting out of IO0-IO3. This latency period (i.e., dummy cycles) allows the device’s internal circuitry
enough time to access data at the initial address. During latency cycles, the data value on IO0-IO3 are “don’t care”
and may be high impedance. The number of dummy cycles is determined by the frequency of SCK and the latency
code table (see Table 28). There are different ordering part numbers that select the latency code table used for
this command, either the High Performance LC (HPLC) table (see Table 26) or the Enhanced High Performance
LC (EHPLC) table (see Table 28). The number of dummy cycles is set by the LC bits in the Configuration Register
(CR1). However, both latency code tables use the same latency values for the Quad I/O Read command.
Following the latency period, the memory contents at the address given, is shifted out four bits at a time through
IO0-IO3. Each nibble (4 bits) is shifted out at the SCK frequency by the falling edge of the SCK signal.
The address can start at any byte location of the memory array. The address is automatically incremented to the
next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore
be read out with one single read instruction and address 000000h provided. When the highest address is reached,
the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued
indefinitely.
Address jumps can be done without the need for additional Quad I/O Read instructions. This is controlled through
the setting of the Mode bits (after the address sequence, as shown in Figure 82 or Figure 84). This added feature
removes the need for the instruction sequence and greatly improves code execution (XIP). The upper nibble (bits
7-4) of the Mode bits control the length of the next Quad I/O instruction through the inclusion or exclusion of the
first byte instruction code. The lower nibble (bits 3-0) of the Mode bits are “don’t care” (“x”). If the Mode bits equal
Axh, then the device remains in Quad I/O High Performance Read Mode and the next address can be entered (after
CS# is raised HIGH and then asserted LOW) without requiring the EBh or ECh instruction, as shown in Figure 83
or Figure 85; thus, eliminating eight cycles for the command sequence. The following sequence will release the
device from Quad I/O High Performance Read mode; after which, the device can accept standard SPI commands:
• During the Quad I/O Read Command Sequence, if the Mode bits are any value other than Axh, then the next time
CS# is raised HIGH the device will be released from Quad I/O High Performance Read mode.
During any operation, if CS# toggles HIGH to LOW to HIGH for eight cycles (or less) and data input (IO0-IO3) are
not set for a valid instruction sequence, then the device will be released from Quad I/O High Performance Read
mode. Note that the two mode bit clock cycles and additional wait states (i.e., dummy cycles) allow the device’s
internal circuitry latency time to access the initial address after the last address cycle that is clocked into IO0-IO3.
It is important that the IO0-IO3 signals be set to high-impedance at or before the falling edge of the first data out
clock. At higher clock speeds the time available to turn off the host outputs before the memory device begins to
drive (bus turn around) is diminished. It is allowed and may be helpful in preventing IO0-IO3 signal contention,
for the host system to turn off the IO0-IO3 signal outputs (make them high impedance) during the last “don’t care”
mode cycle or during any dummy cycles.
CS# should not be driven HIGH during mode or dummy bits as this may make the mode bits indeterminate.
Datasheet
97
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
7
1
6
2
5
3
4
5
2
6
1
7
0
8
12
13
14
15
16
17
18
19
20
21
22
23
SCK
8 cycles
Instruction
6 cycles
24 Bit Address
2 cycles
Mode
4 cycles
Dummy
2 cycles
Data 1
Data 2
0
4
IO0
IO1
IO2
IO3
4
3
20
21
22
23
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
1
5
2
6
3
7
Figure 82
Quad I/O Read command sequence (3-byte address, EBh [ExtAdd = 0], LC = 00b)
CS#
SCK
0
4
5
6
7
8
9
10
11
12
13
14
2 cycles
Data N
2 cycles
Data N+1
6 cycles
24 Bit Address
2 cycles
Mode
4 cycles
Dummy
2 cycles
Data 1
2 cycles
Data 2
0
4
IO0
IO1
IO2
IO3
4
5
6
7
0
4
5
6
7
0
1
2
3
20
21
22
23
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
1
5
1
2
3
2
6
3
7
Figure 83
Continuous Quad I/O Read command sequence (3-byte address), LC = 00b
CS#
SCK
0
7
1
6
2
5
3
4
5
2
6
1
7
0
8
14
15
16
17
18
19
20
21
22
23
24
25
8 cycles
Instruction
8 cycles
32 Bit Address
2 cycles
Mode
4 cycles
Dummy
2 cycles
Data 1
Data 2
0
4
IO0
IO1
4
3
28
29
30
31
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
1
5
5
6
7
2
6
IO2
3
7
IO3
Figure 84
Quad I/O Read command sequence(4-byte address, ECh or EBh [ExtAdd = 1], LC = 00b)
Datasheet
98
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
6
7
8
9
10
11
12
13
14
15
16
SCK
2 cycles
Data N
2 cycles
Data N+1
8 cycles
32 Bit Address
2 cycles
Mode
4 cycles
Dummy
2 cycles
Data 1
2 cycles
Data 2
0
4
IO0
IO1
IO2
IO3
4
5
6
7
0
4
5
6
7
0
1
2
3
28
29
30
31
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
1
5
1
2
3
2
6
3
7
Figure 85
Continuous Quad I/O Read command sequence (4-byte address), LC = 00b
11.4.7
DDR Fast Read (DDRFR 0Dh, 4DDRFR 0Eh)
The instruction
• 0Dh (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• 0Dh (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• 0Eh is followed by a 4-byte address (A31-A0)
The DDR Fast Read command improves throughput by transferring address and data on both the falling and
rising edge of SCK. It is similar to the Fast Read command but allows transfer of address and data on every edge
of the clock.
The maximum operating clock frequency for DDR Fast Read command is 80 MHz.
For the DDR Fast Read command, there is a latency required after the last address bits are shifted into SI before
data begins shifting out of SO. There are different ordering part numbers that select the latency code table used
for this command, either the High Performance LC (HPLC) table (see Table 27) or the Enhanced High Perfor-
mance LC (EHPLC) table (see Table 29). The HPLC table does not provide cycles for mode bits so each DDR Fast
Read command starts with the 8 bit instruction, followed by address, followed by a latency period.
This latency period (dummy cycles) allows the device internal circuitry enough time to access data at the initial
address. During the dummy cycles, the data value on SI is “don’t care” and may be high impedance. The number
of dummy cycles is determined by the frequency of SCK (Table 28). The number of dummy cycles is set by the LC
bits in the Configuration Register (CR1).
Then the memory contents, at the address given, is shifted out, in DDR fashion, one bit at a time on each clock
edge through SO. Each bit is shifted out at the SCK frequency by the rising and falling edge of the SCK signal.
The address can start at any byte location of the memory array. The address is automatically incremented to the
next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore
be read out with one single read instruction and address 000000h provided. When the highest address is reached,
the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued
indefinitely.
The EHPLC table does provide cycles for mode bits so a series of DDR Fast Read commands may eliminate the
8-bit instruction after the first DDR Fast Read command sends a mode bit pattern of complementary first and
second Nibbles, e.g., A5h, 5Ah, 0Fh, etc., that indicates the following command will also be a DDR Fast Read
command. The first DDR Fast Read command in a series starts with the 8-bit instruction, followed by address,
followed by four cycles of mode bits, followed by a latency period. If the mode bit pattern is complementary the
next command is assumed to be an additional DDR Fast Read command that does not provide instruction bits.
That command starts with address, followed by mode bits, followed by latency.
Datasheet
99
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
When the EHPLC table is used, address jumps can be done without the need for additional DDR Fast Read instruc-
tions. This is controlled through the setting of the Mode bits (after the address sequence, as shown in Figure 86
and Figure 88. This added feature removes the need for the eight bit SDR instruction sequence to reduce initial
access time (improves XIP performance). The Mode bits control the length of the next DDR Fast Read operation
through the inclusion or exclusion of the first byte instruction code. If the upper nibble (IO[7:4]) and lower nibble
(IO[3:0]) of the Mode bits are complementary (i.e., 5h and Ah) then the next address can be entered (after CS# is
raised HIGH and then asserted LOW) without requiring the 0Dh or 0Eh instruction, as shown in Figure 87 and
Figure 89, thus, eliminating eight cycles from the command sequence. The following sequences will release the
device from this continuous DDR Fast Read mode; after which, the device can accept standard SPI commands:
1. During the DDR Fast Read command sequence, if the Mode bits are not complementary the next time CS# is
raised HIGH the device will be released from the continuous DDR Fast Read mode.
2. During any operation, if CS# toggles HIGH to LOW to HIGH for eight cycles (or less) and data input (SI) are not
set for a valid instruction sequence, then the device will be released from DDR Fast Read mode.
CS# should not be driven HIGH during mode or dummy bits as this may make the mode bits indeterminate.
The HOLD function is not valid during any part of a Fast DDR Command.
Although the data learning pattern (DLP) is programmable, the following example shows example of the DLP of
34h. The DLP 34h (or 00110100) will be driven on each of the active outputs (i.e. all four IOs on a x4 device, both
IOs on a x2 device and the single SO output on a x1 device). This pattern was chosen to cover both DC and AC data
transition scenarios. The two DC transition scenarios include data low for a long period of time (two half clocks)
followed by a high going transition (001) and the complementary low going transition (110). The two AC transition
scenarios include data low for a short period of time (one half clock) followed by a high going transition (101) and
the complementary low going transition (010). The DC transitions will typically occur with a starting point closer
to the supply rail than the AC transitions that may not have fully settled to their steady state (DC) levels. In many
cases the DC transitions will bound the beginning of the data valid period and the AC transitions will bound the
ending of the data valid period. These transitions will allow the host controller to identify the beginning and
ending of the valid data eye. Once the data eye has been characterized the optimal data capture point can be
chosen. See “SPI DDR Data Learning Registers” on page 60 for more details.
CS#
0
1
2
3
4
5
6
7
8
19
20
21
22
23
24
25
26
27
28
29
SCK
8 cycles
Instruction
12 cycles
24 Bit Address
4 cycles
Mode
1 cyc
Dummy
4 cycles
per data
IO0
IO1
7
6
5
4
3
2
1
0
2
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
Figure 86
DDR Fast Read initial access (3-byte address, 0Dh [ExtAdd = 0, EHPLC = 11b])
CS#
SCK
0
11
12
13
14
15
16
17
18
19
20
21
12 cycles
24 Bit Address
4 cycles
Mode
1 cyc
Dummy
4 cycles
per data
IO0
IO1
23 2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
Figure 87
Continuous DDR Fast read subsequent access (3-byte address [ExtAdd = 0, EHPLC = 11b])
Datasheet
100
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
1
6
2
5
3
4
5
2
6
1
7
0
8
23
24
25
26
27
28
29
30
31
32
33
34
35
36
SCK
8 cycles
Instruction
16 cycles
32b Add
4 cycles
Mode
4 cycles Dummy
Optional DLP
4 cycles
per data
SI
7
4
3
31
2
1
0
7
6
5
4
3
2
1
0
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
Figure 88
DDR Fast Read initial access (4-byte address, 0Eh or 0Dh [ExtAdd = 1], EHPLC = 01b)[54]
CS#
SCK
0
15
16
17
18
19
20
21
22
23
24
25
26
27
28
16 cycles
32b Add
4 cycles
Mode
4 cycles Dummy
Optional DLP
4 cycles
per data
SI
31
1
0
7
6
5
4
3
2
1
0
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
Figure 89
Continuous DDR Fast Read subsequent access (4-byte address [ExtAdd = 1], EHPLC = 01b)[54]
CS#
SCK
0
1
6
2
3
4
5
6
7
8
23
24
25
26
27
28
29
30
31
32
33
34
8 cycles
16 cycles
32b Add
6 cycles
Dummy
4 cycles
per data
Instruction
SI
7
5
4
3
2
1
0
31
2
1
0
SO
7
6
5
4
3
2
1
0
7
Figure 90
DDR Fast Read subsequent access (4-byte address, HPLC = 01b)
Note
54. Example DLP of 34h (or 00110100).
Datasheet
101
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.4.8
DDR Dual I/O Read (BDh, BEh)
The instruction
• BDh (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• BDh (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• BEh is followed by a 4-byte address (A31-A0)
Then the memory contents, at the address given, is shifted out, in a DDR fashion, two bits at a time on each clock
edge through IO0 (SI) and IO1 (SO). Two bits are shifted out at the SCK frequency by the rising and falling edge of
the SCK signal.
The DDR Dual I/O Read command improves throughput with two I/O signals — IO0 (SI) and IO1 (SO). It is similar
to the Dual I/O Read command but transfers two address, mode, or data bits on every edge of the clock. In some
applications, the reduced instruction overhead might allow for code execution (XIP) directly from S25FL128S and
S25FL256S devices.
The maximum operating clock frequency for DDR Dual I/O Read command is 80 MHz.
For DDR Dual I/O Read commands, there is a latency required after the last address bits are shifted into IO0 and
IO1, before data begins shifting out of IO0 and IO1. There are different ordering part numbers that select the
latency code table used for this command, either the High Performance LC (HPLC) table (see Table 27) or the
Enhanced High Performance LC (EHPLC) table (see Table 29). The number of latency (dummy) clocks is deter-
mined by the frequency of SCK (see Table 27 or Table 29). The number of dummy cycles is set by the LC bits in
the Configuration Register (CR1).
The HPLC table does not provide cycles for mode bits so each Dual I/O command starts with the 8 bit instruction,
followed by address, followed by a latency period. This latency period allows the device’s internal circuitry
enough time to access the initial address. During these latency cycles, the data value on SI (IO0) and SO (IO1) are
“don’t care” and may be high impedance. When the Data Learning Pattern (DLP) is enabled the host system must
not drive the IO signals during the dummy cycles. The IO signals must be left high impedance by the host so that
the memory device can drive the DLP during the dummy cycles.
The EHPLC table does provide cycles for mode bits so a series of Dual I/O DDR commands may eliminate the 8-bit
instruction after the first command sends a complementary mode bit pattern, as shown in Figure 91 and
Figure 93. This added feature removes the need for the eight bit SDR instruction sequence and dramatically
reduces initial access times (improves XIP performance). The Mode bits control the length of the next DDR Dual
I/O Read operation through the inclusion or exclusion of the first byte instruction code. If the upper nibble
(IO[7:4]) and lower nibble (IO[3:0]) of the Mode bits are complementary (i.e., 5h and Ah) the device transitions to
Continuous DDR Dual I/O Read Mode and the next address can be entered (after CS# is raised HIGH and then
asserted LOW) without requiring the BDh or BEh instruction, as shown in Figure 92, and thus, eliminating eight
cycles from the command sequence. The following sequences will release the device from Continuous DDR Dual
I/O Read mode; after which, the device can accept standard SPI commands:
1. During the DDR Dual I/O Read command Sequence, if the Mode bits are not complementary the next time CS#
is raised HIGH and then asserted LOW the device will be released from DDR Dual I/O Read mode.
2. During any operation, if CS# toggles HIGH to LOW to HIGH for eight cycles (or less) and data input (IO0 and IO1)
are not set for a valid instruction sequence, then the device will be released from DDR Dual I/O Read mode.
The address can start at any byte location of the memory array. The address is automatically incremented to the
next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore
be read out with one single read instruction and address 000000h provided. When the highest address is reached,
the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued
indefinitely.
CS# should not be driven HIGH during mode or dummy bits as this may make the mode bits indeterminate. The
HOLD function is not valid during Dual I/O DDR commands.
Note that the memory devices may drive the IOs with a preamble prior to the first data value. The preamble is a
data learning pattern (DLP) that is used by the host controller to optimize data capture at higher frequencies. The
preamble DLP drives the IO bus for the four clock cycles immediately before data is output. The host must be sure
to stop driving the IO bus prior to the time that the memory starts outputting the preamble.
Datasheet
102
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
The preamble is intended to give the host controller an indication about the round trip time from when the host
drives a clock edge to when the corresponding data value returns from the memory device. The host controller
will skew the data capture point during the preamble period to optimize timing margins and then use the same
skew time to capture the data during the rest of the read operation. The optimized capture point will be deter-
mined during the preamble period of every read operation. This optimization strategy is intended to compensate
for both the PVT (process, voltage, temperature) of both the memory device and the host controller as well as
any system level delays caused by flight time on the PCB.
Although the data learning pattern (DLP) is programmable, the following example shows example of the DLP of
34h. The DLP 34h (or 00110100) will be driven on each of the active outputs (i.e. all four SIOs on a x4 device, both
SIOs on a x2 device and the single SO output on a x1 device). This pattern was chosen to cover both DC and AC
data transition scenarios. The two DC transition scenarios include data low for a long period of time (two half
clocks) followed by a high going transition (001) and the complementary low going transition (110). The two AC
transition scenarios include data low for a short period of time (one half clock) followed by a high going transition
(101) and the complementary low going transition (010). The DC transitions will typically occur with a starting
point closer to the supply rail than the AC transitions that may not have fully settled to their steady state (DC)
levels. In many cases the DC transitions will bound the beginning of the data valid period and the AC transitions
will bound the ending of the data valid period. These transitions will allow the host controller to identify the
beginning and ending of the valid data eye. Once the data eye has been characterized the optimal data capture
point can be chosen. See “SPI DDR Data Learning Registers” on page 60 for more details.
CS#
0
1
2
3
4
5
6
7
8
15
16
17
18
19
20
21
22
23
24
25
SCK
8 cycles
Instruction
8 cycles
32b Add
2 cycles
Mode
5 cycles Dummy
Optional DLP
2 cycles
per data
IO0
IO1
7
6
5
4
3
2
1
0
30
31
2
2
2
3
0
1
6
7
4
5
2
3
0
1
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
6
7
4
5
2
3
0
1
6
7
Figure 91
DDR Dual I/O Read initial access (4-byte address, BEh or BDh [ExtAdd = 1], EHPLC = 01b)
CS#
SCK
0
8
9
10
11
12
13
14
8
15
16
17
8 cycles
32b Add
2 cycles
Mode
5 cycles Dummy
Optional DLP
2 cycles
per data
IO0
IO1
30
31
2
2
2
3
0
1
6
7
4
5
2
3
0
1
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
6
7
4
5
2
3
0
1
6
7
Figure 92
Continuous DDR Dual I/O Read subsequent access (4-byte address, EHPLC = 01b)
CS#
SCK
0
1
6
2
5
3
4
5
2
6
1
7
0
8
15
16
17
18
19
20
21
22
23
24
8 cycles
Instruction
8 cycles
32b Add
6 cycles
Dummy
2 cycles
per data
IO0
IO1
7
4
3
30
31
2
0
1
6
7
4
5
2
3
0
1
6
7
3
Figure 93
DDR Dual I/O Read (4-byte address, BEh or BDh [ExtAdd = 1], HPLC = 00b)
Datasheet
103
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.4.9
DDR Quad I/O Read (EDh, EEh)
The Read DDR Quad I/O command improves throughput with four I/O signals - IO0-IO3. It is similar to the Quad
I/O Read command but allows input of the address four bits on every edge of the clock. In some applications, the
reduced instruction overhead might allow for code execution (XIP) directly from S25FL128S and S25FL256S
devices. The QUAD bit of the Configuration Register must be set (CR Bit1=1) to enable the Quad capability.
The instruction
• EDh (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• EDh (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• EEh is followed by a 4-byte address (A31-A0)
The address is followed by mode bits. Then the memory contents, at the address given, is shifted out, in a DDR
fashion, with four bits at a time on each clock edge through IO0-IO3.
The maximum operating clock frequency for Read DDR Quad I/O command is 80 MHz.
For Read DDR Quad I/O, there is a latency required after the last address and mode bits are shifted into the IO0-IO3
signals before data begins shifting out of IO0-IO3. This latency period (dummy cycles) allows the device’s internal
circuitry enough time to access the initial address. During these latency cycles, the data value on IO0-IO3 are
“don’t care” and may be high impedance. When the Data Learning Pattern (DLP) is enabled the host system must
not drive the IO signals during the dummy cycles. The IO signals must be left high impedance by the host so that
the memory device can drive the DLP during the dummy cycles.
There are different ordering part numbers that select the latency code table used for this command, either the
High Performance LC (HPLC) table (see Table 27) or the Enhanced High Performance LC (EHPLC) table (see
Table 29). The number of dummy cycles is determined by the frequency of SCK (see Table 27). The number of
dummy cycles is set by the LC bits in the Configuration Register (CR1).
Both latency tables provide cycles for mode bits so a series of Quad I/O DDR commands may eliminate the 8 bit
instruction after the first command sends a complementary mode bit pattern, as shown in Figure 94 and
Figure 96. This feature removes the need for the eight bit SDR instruction sequence and dramatically reduces
initial access times (improves XIP performance). The Mode bits control the length of the next Read DDR Quad I/O
operation through the inclusion or exclusion of the first byte instruction code. If the upper nibble (IO[7:4]) and
lower nibble (IO[3:0]) of the Mode bits are complementary (i.e., 5h and Ah) the device transitions to Continuous
Read DDR Quad I/O Mode and the next address can be entered (after CS# is raised HIGH and then asserted LOW)
without requiring the EDh or EEh instruction, as shown in Figure 95 and Figure 97 thus, eliminating eight cycles
from the command sequence. The following sequences will release the device from Continuous Read DDR Quad
I/O mode; after which, the device can accept standard SPI commands:
1. During the Read DDR Quad I/O Command Sequence, if the Mode bits are not complementary the next time CS#
is raised HIGH and then asserted LOW the device will be released from Read DDR Quad I/O mode.
2. During any operation, if CS# toggles HIGH to LOW to HIGH for eight cycles (or less) and data input (IO0, IO1,
IO2, and IO3) are not set for a valid instruction sequence, then the device will be released from Read DDR Quad
I/O mode.
The address can start at any byte location of the memory array. The address is automatically incremented to the
next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore
be read out with one single read instruction and address 000000h provided. When the highest address is reached,
the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued
indefinitely.
CS# should not be driven HIGH during mode or dummy bits as this may make the mode bits indeterminate. The
HOLD function is not valid during Quad I/O DDR commands.
Note that the memory devices drive the IOs with a preamble prior to the first data value. The preamble is a pattern
that is used by the host controller to optimize data capture at higher frequencies. The preamble drives the IO bus
for the four clock cycles immediately before data is output. The host must be sure to stop driving the IO bus prior
to the time that the memory starts outputting the preamble.
Datasheet
104
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
The preamble is intended to give the host controller an indication about the round trip time from when the host
drives a clock edge to when the corresponding data value returns from the memory device. The host controller
will skew the data capture point during the preamble period to optimize timing margins and then use the same
skew time to capture the data during the rest of the read operation. The optimized capture point will be deter-
mined during the preamble period of every read operation. This optimization strategy is intended to compensate
for both the PVT (process, voltage, temperature) of both the memory device and the host controller as well as
any system level delays caused by flight time on the PCB.
Although the data learning pattern (DLP) is programmable, the following example shows example of the DLP of
34h. The DLP 34h (or 00110100) will be driven on each of the active outputs (i.e. all four SIOs on a x4 device, both
SIOs on a x2 device and the single SO output on a x1 device). This pattern was chosen to cover both DC and AC
data transition scenarios. The two DC transition scenarios include data low for a long period of time (two half
clocks) followed by a high going transition (001) and the complementary low going transition (110). The two AC
transition scenarios include data low for a short period of time (one half clock) followed by a high going transition
(101) and the complementary low going transition (010). The DC transitions will typically occur with a starting
point closer to the supply rail than the AC transitions that may not have fully settled to their steady state (DC)
levels. In many cases the DC transitions will bound the beginning of the data valid period and the AC transitions
will bound the ending of the data valid period. These transitions will allow the host controller to identify the
beginning and ending of the valid data eye. Once the data eye has been characterized the optimal data capture
point can be chosen. See “SPI DDR Data Learning Registers” on page 60 for more details.
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SCK
8 cycles
Instruction
3 cycles
Address
1 cycle
Mode
3 cycle Dummy
1 cycle per data
Data 0 Data 1
High-Z Bus Turn-around
IO0
IO1
IO2
IO3
7
6
5
4
3
2
1
0
20 16 12
8
9
4
5
6
7
0
1
2
3
4
5
6
7
0
4
0
1
2
3
4
5
6
7
21
22
23
17 13
1
2
3
5
6
7
18 14 10
19 15 11
Figure 94
DDR Quad I/O Read initial access (3-byte address, EDh [ExtAdd = 0], HPLC = 11b)
CS#
SCK
0
1
2
3
4
5
6
7
8
3 cycle
1 cycle
Mode
3 cycle Dummy
1 cycle per data
Address
High-Z Bus Turn-around
Data 0
Data 1
IO0
IO1
IO2
IO3
20
21
22
23
16
17
18
19
12
8
9
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
13
14
15
10
11
Figure 95
Continuous DDR Quad I/O Read subsequent access (3-byte address, HPLC = 11b)
Datasheet
105
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
7
1
6
2
5
3
4
5
2
6
1
7
0
8
9
10
11
12
13
14
15
16
17
18
19
20
21
SCK
8 cycles
Instruction
4 cycles
32 Bit Address
1 cycle
Mode
7 cycle Dummy
1 cycle per data
Data 0 Data 1
High-Z Bus Turn-around
Optional Data Learning Pattern
IO0
IO1
IO2
IO3
4
3
28 24 20 16 12
29 25 21 17 13
8
9
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
7
7
7
7
6
6
6
6
5
5
5
5
4
4
4
4
3
3
3
3
2
2
2
2
1
1
1
1
0
0
0
0
4
5
6
7
0
1
2
3
4
5
6
7
30 26 22 18 14 10
31 27 23 19 15 11
Figure 96
DDR Quad I/O Read initial access (4-byte address, EEh or EDh [ExtAdd = 1], EHPLC = 01b)[55]
CS#
SCK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
4 cycles
32 Bit Address
1 cycle
Mode
7 cycle Dummy
1 cycle per data
Data 0 Data 1
High-Z Bus Turn-around
Optional Data Learning Pattern
IO0
IO1
IO2
IO3
28 24 20 16 12
29 25 21 17 13
8
9
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
7
7
7
7
6
6
6
6
5
5
5
5
4
4
4
4
3
3
3
3
2
2
2
2
1
1
1
1
0
0
0
0
4
5
6
7
0
1
2
3
4
5
6
7
30 26 22 18 14 10
31 27 23 19 15 11
Figure 97
Continuous DDR Quad I/O Read subsequent access (4-byte address, EHPLC = 01b)[56]
11.5
Program flash array commands
Program granularity
Automatic ECC
11.5.1
11.5.1.1
Each 16-byte aligned and 16-byte length Programming Block has an automatic Error Correction Code (ECC) value.
The data block plus ECC form an ECC unit. In combination with Error Detection and Correction (EDC) logic the
ECC is used to detect and correct any single bit error found during a read access. When data is first programmed
within an ECC unit the ECC value is set for the entire ECC unit. If the same ECC unit is programmed more than once
the ECC value is changed to disable the Error Detection and Correction (EDC) function. A sector erase is needed
to again enable Automatic ECC on that Programming Block. The 16 byte Program Block is the smallest program
granularity on which Automatic ECC is enabled.
These are automatic operations transparent to the user. The transparency of the Automatic ECC feature
enhances data accuracy for typical programming operations which write data once to each ECC unit but, facili-
tates software compatibility to previous generations of FL-S family of products by allowing for single byte
programming and bit walking in which the same ECC unit is programmed more than once. When an ECC unit has
Automatic ECC disabled, EDC is not done on data read from the ECC unit location.
An ECC status register is provided for determining if ECC is enabled on an ECC unit and whether any errors have
been detected and corrected in the ECC unit data or the ECC (See “ECC Status Register (ECCSR)” on page 58.)
The ECC Status Register Read (ECCRD) command is used to read the ECC status on any ECC unit.
EDC is applied to all parts of the Flash address spaces other than registers. An ECC is calculated for each group of
bytes protected and the ECC is stored in a hidden area related to the group of bytes. The group of protected bytes
and the related ECC are together called an ECC unit.
ECC is calculated for each 16 byte aligned and length ECC unit.
Note
55. Example DLP of 34h (or 00110100).
56. Example DLP of 34h (or 00110100).
Datasheet
106
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
• Single Bit EDC is supported with 8 ECC bits per ECC unit, plus ‘1’ bit for an ECC disable Flag.
• Sector erase resets all ECC bits and ECC disable flags in a sector to the default state (enabled).
• ECC is programmed as part of the standard Program commands operation.
• ECC is disabled automatically if multiple programming operations are done on the same ECC unit.
• Single byte programming or bit walking is allowed but disables ECC on the second program to the same 16-byte
ECC unit.
• The ECC disable flag is programmed when ECC is disabled.
• To re-enable ECC for an ECC unit that has been disabled, the Sector that includes the ECC unit must be erased.
• To ensure the best data integrity provided by EDC, each ECC unit should be programmed only once so that ECC
is stored for that unit and not disabled.
• The calculation, programming, and disabling of ECC is done automatically as part of a programming operation.
The detection and correction, if needed, is done automatically as part of read operations. The host system sees
only corrected data from a read operation.
• ECC protects the OTP region - however a second program operation on the same ECC unit will disable ECC
permanently on that ECC unit (OTP is one time programmable, hence an erase operation to re-enable the ECC
enable/indicator bit is prohibited).
11.5.1.2
Page programming
Page Programming is done by loading a Page Buffer with data to be programmed and issuing a programming
command to move data from the buffer to the memory array. This sets an upper limit on the amount of data that
can be programmed with a single programming command. Page Programming allows up to a page size (either
256- or 512-bytes) to be programmed in one operation. The page size is determined by the Ordering Part Number
(OPN). The page is aligned on the page size address boundary. It is possible to program from one bit up to a page
size in each Page programming operation. It is recommended that a multiple of 16-byte length and aligned
Program Blocks be written. For the very best performance, programming should be done in full pages of
512-bytes aligned on 512-byte boundaries with each Page being programmed only once.
11.5.1.3
Single byte programming
Single Byte Programming allows full backward compatibility to the standard SPI Page Programming (PP)
command by allowing a single byte to be programmed anywhere in the memory array. While single byte
programming is supported, this will disable Automatic ECC on the 16 byte ECC unit where the byte is located.
11.5.2
Page Program (PP 02h or 4PP 12h)
The Page Program (PP) commands allows bytes to be programmed in the memory (changing bits from 1 to 0).
Before the Page Program (PP) commands can be accepted by the device, a Write Enable (WREN) command must
be issued and decoded by the device. After the Write Enable (WREN) command has been decoded successfully,
the device sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The instruction
• 02h (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• 02h (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• 12h is followed by a 4-byte address (A31-A0)
and at least one data byte on SI. Depending on the device OPN, the page size can either be 256 or 512 bytes. Up
to a page can be provided on SI after the 3-byte address with instruction 02h or 4-byte address with instruction
12h has been provided. If the 9 least significant address bits (A8-A0) are not all ‘0’, all transmitted data that goes
beyond the end of the current page are programmed from the start address of the same page (from the address
whose 9 least significant bits (A8-A0) are all ‘0’) i.e., the address wraps within the page aligned address bound-
aries. This is a result of only requiring the user to enter one single page address to cover the entire page boundary.
Datasheet
107
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
If less than a page of data is sent to the device, these data bytes will be programmed in sequence, starting at the
provided address within the page, without having any affect on the other bytes of the same page.
For optimized timings, using the Page Program (PP) command to load the entire page size program buffer within
the page boundary will save overall programming time versus loading less than a page size into the program
buffer.
The programming process is managed by the flash memory device internal control logic. After a programming
command is issued, the programming operation status can be checked using the Read Status Register-1
command. The WIP bit (SR1[0]) will indicate when the programming operation is completed. The P_ERR bit
(SR1[6]) will indicate if an error occurs in the programming operation that prevents successful completion of
programming.
CS
#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCK
SI
24-Bit
Instruction
Data Byte 1
Address
23 22 21
MSb
3
2
1
0
7
6
5
4
3
2
1
0
MSb
CS
#
40 41 42 43 44 45 46 47 48 49 59 51 52 53 54 55
SCK
Data Byte 2
Data Byte 3
Data Byte 512
SI
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
MSb
MSb
MSb
Figure 98
Page Program (PP) command sequence (3-byte address, 02h)
CS
#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47
SCK
SI
32-Bit
Address
Instruction
Data Byte 1
31 30 29
MSb
3
2
1
0
7
6
5
4
3
2
1
0
MSb
CS
#
48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63
SCK
SI
Data Byte 2
Data Byte 3
Data Byte 512
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
MSb
MSb
MSb
Figure 99
Page Program (4PP) command sequence (4-byte address, 12h)
Datasheet
108
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.5.3
Quad Page Program (QPP 32h or 38h, or 4QPP 34h)
The Quad-input Page Program (QPP) command allows bytes to be programmed in the memory (changing bits
from ‘1’ to ‘0’). The Quad-input Page Program (QPP) command allows up to a page size (either 256- or 512-bytes)
of data to be loaded into the Page Buffer using four signals: IO0-IO3. QPP can improve performance for PROM
Programmer and applications that have slower clock speeds (< 12 MHz) by loading 4-bits of data per clock cycle.
Systems with faster clock speeds do not realize as much benefit for the QPP command since the inherent page
program time becomes greater than the time it takes to clock-in the data. The maximum frequency for the QPP
command is 80 MHz.
To use Quad Page Program the Quad Enable Bit in the Configuration Register must be set (QUAD=1). A Write
Enable command must be executed before the device will accept the QPP command (Status Register 1, WEL=1).
The instruction
• 32h (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• 32h (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• 38h (ExtAdd = 0) is followed by a 3-byte address (A23-A0) or
• 38h (ExtAdd = 1) is followed by a 4-byte address (A31-A0) or
• 34h is followed by a 4-byte address (A31-A0)
and at least one data byte, into the IO signals. Data must be programmed at previously erased (FFh) memory
locations.
The programming page is aligned on the page size address boundary. It is possible to program from one bit up
to a page size in each Page programming operation. It is recommended that a multiple of 16-byte length and
aligned Program Blocks be written. This insures that Automatic ECC is not disabled.
All other functions of QPP are identical to Page Program. The QPP command sequence is shown in Figure 100.
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCK
24-Bit
Address
Instruction
IO0
23 22 21
3
2
1
0
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
56
6
0
1
2
3
4
5
6
0
1
2
3
*
IO1
IO2
7
7
7
7
IO3
*
*
*
*
Byte 1 Byte 2 Byte 3 Byte 4
CS#
SCK
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
4
5
6
0
1
2
3
IO0
IO1
IO2
IO3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
7
7
7
7
7
7
7
7
7
7
7
*
*
*
*
*
*
*
*
*
*
*
*
Byte 5 Byte 6 Byte 7 Byte 8 Byte 9 Byte 10 Byte 11 Byte 12
Byte 509 Byte 510Byte 511Byte 512
*MSb
Figure 100
Quad 512-Byte Page Program command sequence (3-byte address, 32h or 38h)
Datasheet
109
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCK
24-Bit
Address
Instruction
IO0
23 22 21
3
2
1
0
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
56
6
0
1
2
3
4
5
6
0
1
2
3
*
IO1
IO2
7
7
7
7
IO3
*
*
*
*
Byte 1 Byte 2 Byte 3 Byte 4
CS#
SCK
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
4
5
6
0
1
2
3
IO0
IO1
IO2
IO3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
7
7
7
7
7
7
7
7
7
7
7
*
*
*
*
*
*
*
*
*
*
*
*
Byte 5 Byte 6 Byte 7 Byte 8 Byte 9 Byte 10 Byte 11 Byte 12
Byte 253 Byte 254Byte 255Byte 256
*MSb
Figure 101
Quad 256-byte Page Program command sequence (3-byte address, 32h or 38h)
CS#
SCK
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47
32-Bit
Address
Instruction
IO0
7
6
5
4
3
2
1
0
31 30 29
3
2
1
0
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
56
6
0
1
2
3
4
5
6
0
1
2
3
*
*
IO1
IO2
7
7
7
7
IO3
*
*
*
*
Byte 1 Byte 2 Byte 3 Byte 4
CS#
SCK
48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63
4
5
6
0
1
2
3
IO0
IO1
IO2
IO3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
7
7
7
7
7
7
7
7
7
7
7
*
*
510
*
511
*
512
*
*
*
*
*
*
*
*
Byte 5 Byte 6 Byte 7 Byte 8 Byte 9 Byte 10 Byte 11 Byte 12
Byte
509
Byte
Byte
Byte
*MSb
Figure 102
Quad 512-byte Page Program command sequence (4-byte address, 34h or 32h or 38h
[ExtAdd = 1])
Datasheet
110
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47
SCK
32-Bit
Address
Instruction
IO0
7
6
5
4
3
2
1
0
31 30 29
3
2
1
0
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
56
6
0
1
2
3
4
5
6
0
1
2
3
*
*
IO1
IO2
7
7
7
7
IO3
*
*
*
*
Byte 1 Byte 2 Byte 3 Byte 4
CS#
SCK
48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63
4
5
6
0
1
2
3
IO0
IO1
IO2
IO3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
7
7
7
7
7
7
7
7
7
7
7
*
*
254
*
255
*
256
*
*
*
*
*
*
*
*
Byte 5 Byte 6 Byte 7 Byte 8 Byte 9 Byte 10 Byte 11 Byte 12
Byte
253
Byte
Byte
Byte
*MSb
Figure 103
Quad 256-byte Page Program command sequence (4-Byte Address, 34h or 32h or 38h
[ExtAdd=1])
11.5.4
Program Suspend (PGSP 85h) and Resume (PGRS 8Ah)
The Program Suspend command allows the system to interrupt a programming operation and then read from
any other non-erase-suspended sector or non-program-suspended-page. Program Suspend is valid only during
a programming operation.
Commands allowed after the Program Suspend command is issued:
• Read Status Register 1 (RDSR1 05h)
• Read Status Register 2 (RDSR2 07h)
The Write in Progress (WIP) bit in Status Register 1 (SR1[0]) must be checked to know when the programming
operation has stopped. The Program Suspend Status bit in the Status Register-2 (SR2[0]) can be used to
determine if a programming operation has been suspended or was completed at the time WIP changes to ‘0’. The
time required for the suspend operation to complete is tPSL, see Table 42.
See Table 52 for the commands allowed while programming is suspend.
The Program Resume command 8Ah must be written to resume the programming operation after a Program
Suspend. If the programming operation was completed during the suspend operation, a resume command is not
needed and has no effect if issued. Program Resume commands will be ignored unless a Program operation is
suspended.
After a Program Resume command is issued, the WIP bit in the Status Register-1 will be set to a ‘1’ and the
programming operation will resume. Program operations may be interrupted as often as necessary e.g., a
program suspend command could immediately follow a program resume command but, in order for a program
operation to progress to completion there must be some periods of time between resume and the next suspend
command greater than or equal to tPRS. See Table 42.
Datasheet
111
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
tPSL
CS#
SCK
Prog. Suspend
Mode Command
Program Suspend Instruction
Read Status
0
SI
7
6
5
4
3
2
1
0
7
6
7
6
SO
7
0
Figure 104
Program Suspend command sequence
CS
#
0
1
2
3
4
5
6
7
SCK
Instruction (8Ah)
SI
7
6
5
4
3
2
1
0
MSb
High Impedance
SO
Resume Programming
Figure 105
Program Resume command sequence
11.6
Erase flash array commands
11.6.1
Parameter 4-KB Sector Erase (P4E 20h or 4P4E 21h)
The P4E command is implemented only in FL128S and FL256S. The P4E command is ignored when the device is
configured with the 256-KB sector option.
The Parameter 4-KB Sector Erase (P4E) command sets all the bits of a 4-KB parameter sector to ‘1’ (all bytes are
FFh). Before the P4E command can be accepted by the device, a Write Enable (WREN) command must be issued
and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write
operations.
The instruction
• 20h [ExtAdd = 0] is followed by a 3-byte address (A23-A0), or
• 20h [ExtAdd = 1] is followed by a 4-byte address (A31-A0), or
• 21h is followed by a 4-byte address (A31-A0)
CS# must be driven into the logic HIGH state after the twenty-fourth or thirty-second bit of the address has been
latched in on SI. This will initiate the beginning of internal erase cycle, which involves the pre-programming and
erase of the chosen sector of the flash memory array. If CS# is not driven high after the last bit of address, the
sector erase operation will not be executed.
As soon as CS# is driven HIGH, the internal erase cycle will be initiated. With the internal erase cycle in progress,
the user can read the value of the Write-In Progress (WIP) bit to determine when the operation has been
completed. The WIP bit will indicate a ‘1’. when the erase cycle is in progress and a ‘0’ when the erase cycle has
been completed.
Datasheet
112
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
A P4E command applied to a sector that has been write protected through the Block Protection bits or ASP, will
not be executed and will set the E_ERR status. A P4E command applied to a sector that is larger than 4 KB will not
be executed and will not set the E_ERR status.
CS
#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
SCK
Instruction
24 Bit Address
SI
23 22 21
MSb
3
2
1
0
Figure 106
Parameter Sector Erase command sequence (3-byte address, 20h)
CS
#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39
SCK
Instruction
32 Bit Address
SI
31 30 29
MSb
3
2
1
0
Figure 107
Parameter Sector Erase command sequence (ExtAdd = 1, 20h or 4-byte address, 21h)
11.6.2
Sector Erase (SE D8h or 4SE DCh)
The Sector Erase (SE) command sets all bits in the addressed sector to ‘1’ (all bytes are FFh). Before the Sector
Erase (SE) command can be accepted by the device, a Write Enable (WREN) command must be issued and
decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write opera-
tions.
The instruction
• D8h [ExtAdd = 0] is followed by a 3-byte address (A23-A0), or
• D8h [ExtAdd = 1] is followed by a 4-byte address (A31-A0), or
• DCh is followed by a 4-byte address (A31-A0)
CS# must be driven into the logic HIGH state after the twenty-fourth or thirty-second bit of address has been
latched in on SI. This will initiate the erase cycle, which involves the pre-programming and erase of the chosen
sector. If CS# is not driven HIGH after the last bit of address, the sector erase operation will not be executed.
As soon as CS# is driven into the logic HIGH state, the internal erase cycle will be initiated. With the internal erase
cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to check if the operation has been
completed. The WIP bit will indicate a ‘1’ when the erase cycle is in progress and a0 when the erase cycle has been
completed.
A Sector Erase (SE) command applied to a sector that has been Write Protected through the Block Protection bits
or ASP, will not be executed and will set the E_ERR status.
Datasheet
113
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
A device ordering option determines whether the SE command erases 64 KB or 256 KB. The option to use this
command to always erase 256 KB provides for software compatibility with higher density and future S25FL family
devices.
ASP has a PPB and a DYB protection bit for each sector, including any 4-KB sectors. If a sector erase command is
applied to a 64-KB range that includes a protected 4-KB sector, or to a 256-KB range that includes a 64-KB
protected address range, the erase will not be executed on the range and will set the E_ERR status.
CS
#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
SCK
SI
Instruction
24 Bit Address
23 22 21
MSb
3
2
1
0
Figure 108
Sector Erase command sequence (ExtAdd = 0, 3-byte address, D8h)
CS
#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39
SCK
Instruction
32 Bit Address
SI
31 30 29
M Sb
3
2
1
0
Figure 109
Sector Erase command sequence (ExtAdd = 1, D8h or 4-byte address, DCh)
11.6.3
Bulk Erase (BE 60h or C7h)
The Bulk Erase (BE) command sets all bits to ‘1’ (all bytes are FFh) inside the entire flash memory array. Before
the BE command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded
by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.
CS# must be driven into the logic HIGH state after the eighth bit of the instruction byte has been latched in on SI.
This will initiate the erase cycle, which involves the pre-programming and erase of the entire flash memory array.
If CS# is not driven HIGH after the last bit of instruction, the BE operation will not be executed.
As soon as CS# is driven into the logic HIGH state, the erase cycle will be initiated. With the erase cycle in progress,
the user can read the value of the Write-In Progress (WIP) bit to determine when the operation has been
completed. The WIP bit will indicate a ‘1’ when the erase cycle is in progress and a ‘0’ when the erase cycle has
been completed.
A BE command can be executed only when the Block Protection (BP2, BP1, BP0) bits are set to 0’s. If the BP bits
are not ‘0’, the BE command is not executed and E_ERR is not set. The BE command will skip any sectors
protected by the DYB or PPB and the E_ERR status will not be set.
Datasheet
114
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
1
2
3
4
5
6
7
SCK
SI
Instruction
Figure 110
Bulk Erase command sequence
11.6.4
Erase Suspend and Resume Commands (ERSP 75h or ERRS 7Ah)
The Erase Suspend command, allows the system to interrupt a sector erase operation and then read from or
program data to, any other sector. Erase Suspend is valid only during a sector erase operation. The Erase Suspend
command is ignored if written during the Bulk Erase operation.
When the Erase Suspend command is written during the sector erase operation, the device requires a maximum
of tESL (erase suspend latency) to suspend the erase operation and update the status bits. See Table 43.
Commands allowed after the Erase Suspend command is issued:
• Read Status Register 1 (RDSR1 05h)
• Read Status Register 2 (RDSR2 07h)
The Write in Progress (WIP) bit in Status Register 1 (SR1[0]) must be checked to know when the erase operation
has stopped. The Erase Suspend bit in Status Register-2 (SR2[1]) can be used to determine if an erase operation
has been suspended or was completed at the time WIP changes to ‘0’.
If the erase operation was completed during the suspend operation, a resume command is not needed and has
no effect if issued. Erase Resume commands will be ignored unless an Erase operation is suspended.
See Table 52 for the commands allowed while erase is suspend.
After the erase operation has been suspended, the sector enters the erase-suspend mode. The system can read
data from or program data to the device. Reading at any address within an erase-suspended sector produces
undetermined data.
A WREN command is required before any command that will change non-volatile data, even during erase
suspend.
The WRR and PPB Erase commands are not allowed during Erase Suspend, it is therefore not possible to alter the
Block Protection or PPB bits during Erase Suspend. If there are sectors that may need programming during Erase
suspend, these sectors should be protected only by DYB bits that can be turned off during Erase Suspend.
However, WRR is allowed immediately following the BRAC command; in this special case the WRR is interpreted
as a write to the Bank Address Register, not a write to SR1 or CR1.
If a program command is sent for a location within an erase suspended sector the program operation will fail with
the P_ERR bit set.
After an erase-suspended program operation is complete, the device returns to the erase-suspend mode. The
system can determine the status of the program operation by reading the WIP bit in the Status Register, just as
in the standard program operation.
The Erase Resume command 7Ah must be written to resume the erase operation if an Erase is suspend. Erase
Resume commands will be ignored unless an Erase is Suspend.
After an Erase Resume command is sent, the WIP bit in the status register will be set to a ‘1’ and the erase
operation will continue. Further Resume commands are ignored.
Datasheet
115
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
Erase operations may be interrupted as often as necessary e.g., an erase suspend command could immediately
follow an erase resume command but, in order for an erase operation to progress to completion there must be
some periods of time between resume and the next suspend command greater than or equal to tERS. See
Table 43.
tESL
CS#
SCK
Erase Suspend
Erase Suspend Instruction
Read Status
0
Mode Command
SI
7
6
5
4
3
2
1
0
7
6
7
6
SO
7
0
Figure 111
Erase Suspend command sequence
CS
#
0
1
2
3
4
5
6
7
SCK
Instruction (7Ah)
SI
7
6
5
4
3
2
1
0
MSb
High Impedance
SO
Resume Sector or Block Erase
Figure 112
Table 52
Erase Resume command sequence
Commands allowed during Program or Erase Suspend
Allowed
during
Erase
Allowed
during
Instruction Instruction
Comment
name
BRAC
BRRD
BRWR
CLSR
code (Hex)
Program
Suspend
Suspend
B9
16
17
30
E0
X
X
X
X
X
X
X
X
–
–
Bank address register may need to be changed during
a suspend to reach a sector for read or program.
Bank address register may need to be changed during
a suspend to reach a sector for read or program.
Bank address register may need to be changed during
a suspend to reach a sector for read or program.
Clear status may be used if a program operation fails
during erase suspend.
DYBRD
It may be necessary to remove and restore dynamic
protection during erase suspend to allow
programming during erase suspend.
DYBWR
ERRS
E1
7A
X
X
–
–
It may be necessary to remove and restore dynamic
protection during erase suspend to allow
programming during erase suspend.
Required to resume from erase suspend.
Datasheet
116
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
Table 52
Commands allowed during Program or Erase Suspend (continued)
Allowed
during
Erase
Allowed
during
Instruction Instruction
Comment
name
code (Hex)
Program
Suspend
Suspend
DDRFR
4DDRFR
FAST_READ
4FAST_READ
MBR
0D
0E
0B
0C
FF
8A
X
X
X
X
X
X
X
X
X
X
X
X
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
May need to reset a read operation during suspend.
Needed to resume a program operation. A program
resume may also be used during nested program
suspend within an erase suspend.
PGRS
PGSP
PP
4PP
85
02
12
E2
X
X
X
X
–
–
–
–
Program suspend allowed during erase suspend.
Required for array program during erase suspend.
Required for array program during erase suspend.
Allowed for checking persistent protection before
attempting a program command during erase
suspend.
PPBRD
QPP
4QPP
4READ
RDCR
DIOR
4DIOR
DOR
32, 38
34
13
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
–
–
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Required for array program during erase suspend.
Required for array program during erase suspend.
All array reads allowed in suspend.
35
BB
BC
3B
3C
BD
BE
ED
EE
EB
EC
6B
6C
05
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
All array reads allowed in suspend.
4DOR
DDRDIOR
4DDRDIOR
DDRQIOR
DDRQIOR4
QIOR
4QIOR
QOR
4QOR
RDSR1
Needed to read WIP to determine end of suspend
process.
RDSR2
07
X
X
Needed to read suspend status to determine whether
the operation is suspended or complete.
READ
RESET
WREN
WRR
03
F0
06
01
X
X
X
X
X
X
–
X
All array reads allowed in suspend.
Reset allowed anytime.
Required for program command within erase suspend.
Bank register may need to be changed during a
suspend to reach a sector needed for read or program.
WRR is allowed when following BRAC.
Datasheet
117
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.7
One Time Program Array commands
OTP Program (OTPP 42h)
11.7.1
The OTP Program command programs data in the One Time Program region, which is in a different address space
from the main array data. The OTP region is 1024 bytes so, the address bits from A23 to A10 must be ‘0’ for this
command. See “OTP address space” on page 49 for details on the OTP region. The protocol of the OTP Program
command is the same as the Page Program command. Before the OTP Program command can be accepted by
the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write
Enable Latch (WEL) in the Status Register to enable any write operations.
To program the OTP array in bit granularity, the rest of the bits within a data byte can be set to ‘1’.
Each region in the OTP memory space can be programmed one or more times, provided that the region is not
locked. Attempting to program zeros in a region that is locked will fail with the P_ERR bit in SR1 set to ‘1’
Programming ones, even in a protected area does not cause an error and does not set P_ERR. Subsequent OTP
programming can be performed only on the un-programmed bits (that is, ‘1’ data).
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCK
SI
24-Bit
Instruction
Data Byte 1
Address
23 22 21
0
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
MSb
MSb
CS#
40 41 42 43 44 45 46 47 48 49 59 51 52 53 54 55
SCK
SI
Data Byte 2
Data Byte 3
Data Byte 512
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
MSb
MSb
MSb
Figure 113
OTP Program command sequence
11.7.2
OTP Read (OTPR 4Bh)
The OTP Read command reads data from the OTP region. The OTP region is 1024 bytes so, the address bits from
A23 to A10 must be ‘0’ for this command. See 2 for details on the OTP region. The protocol of the OTP Read
command is similar to the Fast Read command except that it will not wrap to the starting address after the OTP
address is at its maximum; instead, the data beyond the maximum OTP address will be undefined. Also, the OTP
Read command is not affected by the latency code. The OTP read command always has one dummy byte of
latency as shown below.
CS
#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCK
24-Bit
Address
Instruction
Dummy Byte
SI
23 22 21
3
2
1
0
7
6
5
4
3
2
1
0
DATA OUT 1
DATA OUT 2
High Impedance
SO
7
6
5
4
3
2
1
0
7
MSb
MSb
Figure 114
OTP Read command sequence
Datasheet
118
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.8
Advanced Sector Protection commands
ASP Read (ASPRD 2Bh)
11.8.1
The ASP Read instruction 2Bh is shifted into SI by the rising edge of the SCK signal. Then the 16-bit ASP register
contents is shifted out on the serial output SO, least significant byte first. Each bit is shifted out at the SCK
frequency by the falling edge of the SCK signal. It is possible to read the ASP register continuously by providing
multiples of 16 clock cycles. The maximum operating clock frequency for the ASP Read (ASPRD) command is
133 MHz.
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
SI
Instruction
7
6
5
4
3
2
1
0
MSb
Register Out
Register Out
High Impedance
7
6
5
4
3
2
1
0
7
15 14 13 12 11 10
9
8
SO
MSb
MSb
MSb
Figure 115
ASPRD command
11.8.2
ASP Program (ASPP 2Fh)
Before the ASP Program (ASPP) command can be accepted by the device, a Write Enable (WREN) command must
be issued. After the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch
(WEL) in the Status Register to enable any write operations.
The ASPP command is entered by driving CS# to the logic LOW state, followed by the instruction and two data
bytes on SI, least significant byte first. The ASP Register is two data bytes in length.
The ASPP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner
as any other programming operation.
CS# input must be driven to the logic HIGH state after the sixteenth bit of data has been latched in. If not, the
ASPP command is not executed. As soon as CS# is driven to the logic HIGH state, the self-timed ASPP operation
is initiated. While the ASPP operation is in progress, the Status Register may be read to check the value of the
Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a ‘1’ during the self-timed ASPP operation, and is a
‘0’ when it is completed. When the ASPP operation is completed, the Write Enable Latch (WEL) is set to a ‘0’.
CS#
16 17 18 19 20 21 22 23
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
SCK
SI
Instruction
Register In
15 14 13 12 11 10
9
8
7
6
3
2
1
0
4
7
6
5
4
3
2
1
0
5
MSb
MSb
High Impedance
SO
Figure 116
ASPP command
Datasheet
119
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.8.3
DYB Read (DYBRD E0h)
The instruction E0h is latched into SI by the rising edge of the SCK signal. Followed by the 32-bit address selecting
location ‘0’ within the desired sector (note, the high order address bits not used by a particular density device
must be ‘0’). Then the 8-bit DYB access register contents are shifted out on the serial output SO. Each bit is shifted
out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the same DYB access register
continuously by providing multiples of eight clock cycles. The address of the DYB register does not increment so
this is not a means to read the entire DYB array. Each location must be read with a separate DYB Read command.
The maximum operating clock frequency for READ command is 133 MHz.
CS#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47
SCK
32-Bit
Address
Instruction
SI
7
6
5
4
3
2
1
0
31 30 29
3
2
1
0
DATA OUT 1
High Impedance
SO
7
6
5
4
3
2
1
0
MSb
Figure 117
DYBRD command sequence
11.8.4
DYB Write (DYBWR E1h)
Before the DYB Write (DYBWR) command can be accepted by the device, a Write Enable (WREN) command must
be issued. After the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch
(WEL) in the Status Register to enable any write operations.
The DYBWR command is entered by driving CS# to the logic LOW state, followed by the instruction, the 32-bit
address selecting location ‘0’ within the desired sector (note, the high order address bits not used by a particular
density device must be ‘0’), then the data byte on SI. The DYB Access Register is one data byte in length.
The DYBWR command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same
manner as any other programming operation. CS# must be driven to the logic HIGH state after the eighth bit of
data has been latched in. If not, the DYBWR command is not executed. As soon as CS# is driven to the logic HIGH
state, the self-timed DYBWR operation is initiated. While the DYBWR operation is in progress, the Status Register
may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a ‘1’ during
the self-timed DYBWR operation, and is a ‘0’ when it is completed. When the DYBWR operation is completed, the
Write Enable Latch (WEL) is set to a ‘0’.
CS#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47
SCK
SI
32-Bit
Instruction
Data Byte 1
Address
31 30 29
MSb
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
MSb
Figure 118
DYBWR command sequence
Datasheet
120
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.8.5
PPB Read (PPBRD E2h)
The instruction E2h is shifted into SI by the rising edges of the SCK signal, followed by the 32-bit address selecting
location ‘0’ within the desired sector (note, the high order address bits not used by a particular density device
must be ‘0’) Then the 8-bit PPB access register contents are shifted out on SO.
It is possible to read the same PPB access register continuously by providing multiples of eight clock cycles. The
address of the PPB register does not increment so this is not a means to read the entire PPB array. Each location
must be read with a separate PPB Read command. The maximum operating clock frequency for the PPB Read
command is 133 MHz.
CS#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47
SCK
32-Bit
Address
Instruction
SI
7
6
5
4
3
2
1
0
31 30 29
3
2
1
0
DATA OUT 1
High Impedance
SO
7
6
5
4
3
2
1
0
MSb
Figure 119
PPBRD command sequence
11.8.6
PPB Program (PPBP E3h)
Before the PPB Program (PPBP) command can be accepted by the device, a Write Enable (WREN) command must
be issued. After the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch
(WEL) in the Status Register to enable any write operations.
The PPBP command is entered by driving CS# to the logic LOW state, followed by the instruction, followed by the
32-bit address selecting location ‘0’ within the desired sector (note, the high order address bits not used by a
particular density device must be ‘0’).
The PPBP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner
as any other programming operation.
CS# must be driven to the logic HIGH state after the last bit of address has been latched in. If not, the PPBP
command is not executed. As soon as CS# is driven to the logic HIGH state, the self-timed PPBP operation is
initiated. While the PPBP operation is in progress, the Status Register may be read to check the value of the
Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a ‘1’ during the self-timed PPBP operation, and is a
‘0’ when it is completed. When the PPBP operation is completed, the Write Enable Latch (WEL) is set to a ‘0’.
CS
#
0
1
2
3
4
5
6
7
8
9
10
36 37
38
39
35
SCK
Instruction
32 bit Address
3
SI
7
6
5
4
3
2
1
0
31 30 29
MSb
2
1
0
MSb
High Impedance
SO
Figure 120
PPBP command sequence
Datasheet
121
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.8.7
PPB Erase (PPBE E4h)
The PPB Erase (PPBE) command sets all PPB bits to ‘1’. Before the PPB Erase command can be accepted by the
device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable
Latch (WEL) in the Status Register to enable any write operations.
The instruction E4h is shifted into SI by the rising edges of the SCK signal.
CS# must be driven into the logic HIGH state after the eighth bit of the instruction byte has been latched in on SI.
This will initiate the beginning of internal erase cycle, which involves the pre-programming and erase of the entire
PPB memory array. Without CS# being driven to the logic HIGH state after the eighth bit of the instruction, the
PPB erase operation will not be executed.
With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to check if
the operation has been completed. The WIP bit will indicate a ‘1’ when the erase cycle is in progress and a ‘0’ when
the erase cycle has been completed. Erase suspend is not allowed during PPB Erase.
CS#
0
1
2
3
4
5
6
7
SCK
Instruction
SI
7
6
5
4
3
2
1
0
MSb
High Impedance
SO
Figure 121
PPB Erase command sequence
11.8.8
PPB Lock Bit Read (PLBRD A7h)
The PPB Lock Bit Read (PLBRD) command allows the PPB Lock Register contents to be read out of SO. It is
possible to read the PPB lock register continuously by providing multiples of eight clock cycles. The PPB Lock
Register contents may only be read when the device is in standby state with no other operation in progress. It is
recommended to check the Write-In Progress (WIP) bit of the Status Register before issuing a new command to
the device.
CS#
SCK
SI
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Phase
Instruction
Register Read
Repeat Register Read
Figure 122
PPB Lock Register Read command sequence
11.8.9
PPB Lock Bit Write (PLBWR A6h)
The PPB Lock Bit Write (PLBWR) command clears the PPB Lock Register to ‘0’. Before the PLBWR command can
be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which
sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The PLBWR command is entered by driving CS# to the logic LOW state, followed by the instruction.
CS# must be driven to the logic HIGH state after the eighth bit of instruction has been latched in. If not, the PLBWR
command is not executed. As soon as CS# is driven to the logic HIGH state, the self-timed PLBWR operation is
initiated. While the PLBWR operation is in progress, the Status Register may still be read to check the value of the
Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a ‘1’ during the self-timed PLBWR operation, and is
a ‘0’ when it is completed. When the PLBWR operation is completed, the Write Enable Latch (WEL) is set to a ‘0’.
The maximum clock frequency for the PLBWR command is 133 MHz.
Datasheet
122
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
1
2
3
4
5
6
7
SCK
Instruction
SI
7
6
5
4
3
2
1
0
MSb
High Impedance
SO
Figure 123
PPB Lock Bit Write command sequence
11.8.10
Password Read (PASSRD E7h)
The correct password value may be read only after it is programmed and before the Password Mode has been
selected by programming the Password Protection Mode bit to ‘0’ in the ASP Register (ASP[2]). After the Password
Protection Mode is selected the PASSRD command is ignored.
The PASSRD command is shifted into SI. Then the 64-bit Password is shifted out on the serial output SO, least
significant byte first, most significant bit of each byte first. Each bit is shifted out at the SCK frequency by the
falling edge of the SCK signal. It is possible to read the Password continuously by providing multiples of 64 clock
cycles. The maximum operating clock frequency for the PASSRD command is 133 MHz.
CS#
0
1
2
3
4
5
6
7
8
9
10 11
69 70 71 72
SCK
Instruction
SI
7
6
5
4
3
2
1
0
MSb
Password Least Sig. Byte First
58 57 56
High Impedance
7
7
6
5
4
SO
MSb
MSb
Figure 124
Password Read command sequence
11.8.11
Password Program (PASSP E8h)
Before the Password Program (PASSP) command can be accepted by the device, a Write Enable (WREN)
command must be issued and decoded by the device. After the Write Enable (WREN) command has been
decoded, the device sets the Write Enable Latch (WEL) to enable the PASSP operation.
The password can only be programmed before the Password Mode is selected by programming the Password
Protection Mode bit to ‘0’ in the ASP Register (ASP[2]). After the Password Protection Mode is selected the PASSP
command is ignored.
The PASSP command is entered by driving CS# to the logic LOW state, followed by the instruction and the
password data bytes on SI, least significant byte first, most significant bit of each byte first. The password is
sixty-four (64) bits in length.
CS# must be driven to the logic HIGH state after the sixty-fourth (64th) bit of data has been latched. If not, the
PASSP command is not executed. As soon as CS# is driven to the logic HIGH state, the self-timed PASSP operation
is initiated. While the PASSP operation is in progress, the Status Register may be read to check the value of the
Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a ‘1’ during the self-timed PASSP cycle, and is a ‘0’
when it is completed. The PASSP command can report a program error in the P_ERR bit of the status register.
When the PASSP operation is completed, the Write Enable Latch (WEL) is set to a ‘0’. The maximum clock
frequency for the PASSP command is 133 MHz.
Datasheet
123
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
CS#
0
1
2
3
4
5
6
7
8
9
10
68 69
70
71
SCK
Instruction
Password
SI
7
6
5
4
3
2
1
0
7
6
5
59
58
57
56
MSb
MSb
High Impedance
SO
Figure 125
Password Program command sequence
11.8.12
Password Unlock (PASSU E9h)
The PASSU command is entered by driving CS# to the logic LOW state, followed by the instruction and the
password data bytes on SI, least significant byte first, most significant bit of each byte first. The password is
sixty-four (64) bits in length.
CS# must be driven to the logic HIGH state after the sixty-fourth (64th) bit of data has been latched. If not, the
PASSU command is not executed. As soon as CS# is driven to the logic HIGH state, the self-timed PASSU operation
is initiated. While the PASSU operation is in progress, the Status Register may be read to check the value of the
Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a ‘1’ during the self-timed PASSU cycle, and is a ‘0’
when it is completed.
If the PASSU command supplied password does not match the hidden password in the Password Register, an
error is reported by setting the P_ERR bit to ‘1’. The WIP bit of the status register also remains set to ‘1’. It is
necessary to use the CLSR command to clear the status register, the RESET command to software reset the
device, or drive the RESET# input LOW to initiate a hardware reset, in order to return the P_ERR and WIP bits to
‘0’. This returns the device to standby state, ready for new commands such as a retry of the PASSU command.
If the password does match, the PPB Lock bit is set to ‘1’. The maximum clock frequency for the PASSU command
is 133 MHz.
CS#
0
1
2
3
4
5
6
7
8
9
10
68 69
70
71
SCK
Instruction
Password
SI
7
6
5
4
3
2
1
0
7
6
5
59
58
57
56
MSb
MSb
High Impedance
SO
Figure 126
Password Unlock command sequence
Datasheet
124
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Commands
11.9
Reset commands
11.9.1
Software Reset command (RESET F0h)
The Software Reset command (RESET) restores the device to its initial power up state, except for the volatile
FREEZE bit in the Configuration register CR1[1] and the volatile PPB Lock bit in the PPB Lock Register. The Freeze
bit and the PPB Lock bit will remain set at their last value prior to the software reset. To clear the FREEZE bit and
set the PPB Lock bit to its protection mode selected power on state, a full power-on-reset sequence or hardware
reset must be done. Note that the non-volatile bits in the configuration register, TBPROT, TBPARM, and BPNV,
retain their previous state after a Software Reset. The Block Protection bits BP2, BP1, and BP0, in the status
register will only be reset if they are configured as volatile via the BPNV bit in the Configuration Register (CR1[3])
and FREEZE is cleared to ‘0’. The software reset cannot be used to circumvent the FREEZE or PPB Lock bit
protection mechanisms for the other security configuration bits. The reset command is executed when CS# is
brought to HIGH state and requires tRPH time to execute.
CS#
0
1
2
3
4
5
6
7
SCK
SI
Instruction
Figure 127
Software Reset command sequence
11.9.2
Mode Bit Reset (MBR FFh)
The Mode Bit Reset (MBR) command can be used to return the device from continuous high performance read
mode back to normal standby awaiting any new command. Because some device packages lack a hardware
RESET# input and a device that is in a continuous high performance read mode may not recognize any normal
SPI command, a system hardware reset or software reset command may not be recognized by the device. It is
recommended to use the MBR command after a system reset when the RESET# signal is not available or, before
sending a software reset, to ensure the device is released from continuous high performance read mode.
The MBR command sends Ones on SI or IO0 for 8 SCK cycles. IO1 to IO3 are “don’t care” during these cycles.
CS
#
0
1
2
3
4
5
6
7
SCK
Instruction (FFh)
SI
High Impedance
SO
Figure 128
Mode Bit Reset command sequence
Datasheet
125
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Data integrity
12
Data integrity
12.1
Erase endurance
Table 53
Erase endurance
Parameter
Minimum
100K
Unit
PE cycle
PE cycle
Program/Erase cycles per main flash array sectors
Program/Erase cycles per PPB array or non-volatile register array[57]
Note
100K
57. Each write command to a non-volatile register causes a PE cycle on the entire non-volatile register array.
12.2
Data retention
Table 54
Data retention
Parameter
Test conditions
Minimum time
Unit
Years
Years
Data retention time 10K Program/Erase Cycles
100K Program/Erase Cycles
20
2
Datasheet
126
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
13
Device identification
13.1
Command summary
Table 55
S25FL128S and S25FL256S instruction set (Sorted by instruction)
Instruction
(Hex)
Maximumfrequency
(MHz)
Command name
Command description
01
02
03
04
05
06
07
0B
0C
0D
0E
12
13
14
15
16
17
18
20
21
2B
2F
30
32
34
35
38
3B
3C
41
42
43
4A
4B
60
6B
WRR
PP
Write Register (Status-1, Configuration-1)
Page Program (3- or 4-byte address)
Read (3- or 4-byte address)
Write Disable
Read Status Register-1
Write Enable
133
133
50
133
133
133
133
133
133
80
READ
WRDI
RDSR1
WREN
RDSR2
FAST_READ
4FAST_READ
DDRFR
4DDRFR
4PP
Read Status Register-2
Fast Read (3- or 4-byte address)
Fast Read (4-byte address)
DDR Fast Read (3- or 4-byte address)
DDR Fast Read (4-byte address)
Page Program (4-byte address)
Read (4-byte address)
AutoBoot Register Read
AutoBoot Register Write
Bank Register Read
Bank Register Write
80
133
50
4READ
ABRD
ABWR
BRRD
BRWR
ECCRD
P4E
4P4E
ASPRD
ASPP
CLSR
QPP
4QPP
RDCR
QPP
133
133
133
133
133
133
133
133
133
133
80
ECC Read
Parameter 4 KB-sector Erase (3- or 4-byte address)
Parameter 4 KB-sector Erase (4-byte address)
ASP Read
ASP Program
Clear Status Register - Erase/Program Fail Reset
Quad Page Program (3- or 4-byte address)
Quad Page Program (4-byte address)
Read Configuration Register-1
Quad Page Program (3- or 4-byte address)
Read Dual Out (3- or 4-byte address)
Read Dual Out (4-byte address)
Data Learning Pattern Read
OTP Program
Program NV Data Learning Register
Write Volatile Data Learning Register
OTP Read
Bulk Erase
Read Quad Out (3- or 4-byte address)
80
133
80
DOR
104
104
133
133
133
133
133
133
104
4DOR
DLPRD
OTPP
PNVDLR
WVDLR
OTPR
BE
QOR
Datasheet
127
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2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 55
S25FL128S and S25FL256S instruction set (Sorted by instruction) (continued)
Instruction
(Hex)
Maximumfrequency
(MHz)
Command name
Command description
Read Quad Out (4-byte address)
Erase Suspend
Erase Resume
Program Suspend
Program Resume
6C
75
7A
85
8A
90
9F
A3
A6
A7
AB
B9
4QOR
ERSP
ERRS
PGSP
PGRS
104
133
133
133
133
133
133
133
133
133
50
READ_ID (REMS) Read Electronic Manufacturer Signature
RDID
MPM
PLBWR
PLBRD
RES
Read ID (JEDEC Manufacturer ID and JEDEC CFI)
Reserved for Multi-I/O-High Perf Mode (MPM)
PPB Lock Bit Write
PPB Lock Bit Read
Read Electronic Signature
Bank Register Access
(Legacy Command formerly used for Deep Power
Down)
BRAC
133
BB
BC
BD
BE
C7
D8
DC
E0
E1
E2
E3
E4
E5
E6
E7
E8
E9
EB
EC
ED
EE
F0
FF
DIOR
4DIOR
DDRDIOR
4DDRDIOR
BE
SE
4SE
DYBRD
DYBWR
PPBRD
PPBP
Dual I/O Read (3- or 4-byte address)
Dual I/O Read (4-byte address)
DDR Dual I/O Read (3- or 4-byte address)
DDR Dual I/O Read (4-byte address)
Bulk Erase (alternate command)
Erase 64 KB or 256 KB (3- or 4-byte address)
Erase 64 KB or 256 KB (4-byte address)
DYB Read
DYB Write
PPB Read
PPB Program
PPB Erase
104
104
80
80
133
133
133
133
133
133
133
133
–
PPBE
Reserved-E5
Reserved-E6
PASSRD
PASSP
PASSU
QIOR
4QIOR
DDRQIOR
4DDRQIOR
RESET
Reserved
Reserved
Password Read
Password Program
–
133
133
133
104
104
80
80
133
133
Password Unlock
Quad I/O Read (3- or 4-byte address)
Quad I/O Read (4-byte address)
DDR Quad I/O Read (3- or 4-byte address)
DDR Quad I/O Read (4-byte address)
Software Reset
MBR
Mode Bit Reset
Datasheet
128
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
13.2
Device ID and common flash interface (ID-CFI) address map
13.2.1
Table 56
Byte address
00h
Field definitions
Manufacturer and device ID
Data
01h
Description
Manufacturer ID for Infineon
01h
20h (128 Mb)
02h (256 Mb)
Device ID Most Significant Byte - Memory Interface Type
02h
03h
18h (128 Mb)
19h (256 Mb)
Device ID Least Significant Byte - Density
4Dh
ID-CFI Length - number bytes following. Adding this value to the
current location of 03h gives the address of the last valid
location in the ID-CFI address map. A value of 00h indicates the
entire 512-byte ID-CFI space must be read because the actual
length of the ID-CFI information is longer than can be indicated
by this legacy single byte field. The value is OPN dependent.
04h
00h (Uniform 256-KB sectors) Sector Architecture
01h (4-KB parameter sectors
with uniform 64-KB sectors)
05h
06h
07h
80h (FL-S Family)
Family ID
ASCII characters for Model
See “Ordering information” on page 154 for the model
number definitions.
xxh
xxh
08h
09h
0Ah
0Bh
0Ch
0Dh
0Eh
0Fh
xxh
xxh
xxh
xxh
xxh
xxh
xxh
xxh
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Table 57
CFI query identification string
Data
Byte address
Description
10h
11h
12h
51h
52h
59h
Query Unique ASCII string “QRY”
13h
14h
02h
00h
Primary OEM Command Set
FL-P backward compatible command set ID
15h
16h
40h
00h
Address for Primary Extended Table
17h
18h
53h
46h
Alternate OEM Command Set
ASCII characters “FS” for SPI (F) interface, S Technology
19h
1Ah
51h
00h
Address for Alternate OEM Extended Table
Datasheet
129
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 58
Byte address
1Bh
CFI system interface string
Data
27h
36h
00h
00h
06h
Description
CC Min. (erase/program): 100 millivolts
CC Max. (erase/program): 100 millivolts
PP Min. voltage (00h = no VPP present)
PP Max. voltage (00h = no VPP present)
V
V
V
V
1Ch
1Dh
1Eh
1Fh
Typical timeout per single byte program 2N µs
20h
08h (256B page)
09h (512B page)
08h (4 KB or 64 KB)
09h (256 KB)
Typical timeout for Min. size Page program 2N µs
(00h = not supported)
Typical timeout per individual sector erase 2N ms
21h
22h
0Fh (128 Mb)
10h (256 Mb)
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
24h
25h
26h
02h
02h
03h
03h
Max. timeout for byte program 2N times typical
Max. timeout for page program 2N times typical
Max. timeout per individual sector erase 2N times typical
Max. timeout for full chip erase 2N times typical
(00h = not supported)
Table 59
Device geometry definition for 128-Mb and 256-Mb bottom boot initial delivery state[58]
Byte address
Data
18h (128 Mb)
19h (256 Mb)
Description
27h
Device size = 2N bytes
28h
29h
02h
01h
Flash device interface description:
0000h = x8 only
0001h = x16 only
0002h = x8/x16 capable
0003h = x32 only
0004h = Single I/O SPI, 3-byte address
0005h = Multi I/O SPI, 3-byte address
0102h = Multi I/O SPI, 3- or 4-byte address
2Ah
2Bh
08h
00h
Max. number of bytes in multi-byte write = 2N
(0000 = Not supported
0008h = 256B page
0009h = 512B page)
2Ch
02h
Number of Erase Block Regions within device
1 = Uniform device, 2 = Boot device
Note
58. FL-S 128 Mb and 256-Mb devices have either a hybrid sector architecture with thirty two 4-KB sectors and
all remaining sectors of 64-KB or with uniform 256-KB sectors. Devices with the hybrid sector architecture
are initially shipped from Infineon with the 4 KB sectors located at the bottom of the array address map.
However, the device configuration TBPARM bit CR1[2] may be programed to invert the sector map to place
the 4-KB sectors at the top of the array address map. The CFI geometry information of the above table is
relevant only to the initial delivery state of a hybrid sector device. The flash device driver software must
examine the TBPARM bit to determine if the sector map was inverted at a later time.
Datasheet
130
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 59
Device geometry definition for 128-Mb and 256-Mb bottom boot initial delivery state[58] (con-
tinued)
Byte address
Data
1Fh
00h
10h
00h
FDh
Description
2Dh
2Eh
2Fh
30h
31h
32h
Erase Block Region 1 Information (refer to JEDEC JEP137):
32 sectors = 32-1 = 001Fh
4-KB sectors = 256 bytes x 0010h
Erase Block Region 2 Information:
254 sectors = 254-1 = 00FDh (128 Mb)
510 sectors = 510-1 = 01FDh (256 Mb)
64-KB sectors = 0100h x 256 bytes
00h (128 Mb)
01h (256 Mb)
33h
34h
35h thru 3Fh
Note
00h
01h
FFh
RFU
58. FL-S 128 Mb and 256-Mb devices have either a hybrid sector architecture with thirty two 4-KB sectors and
all remaining sectors of 64-KB or with uniform 256-KB sectors. Devices with the hybrid sector architecture
are initially shipped from Infineon with the 4 KB sectors located at the bottom of the array address map.
However, the device configuration TBPARM bit CR1[2] may be programed to invert the sector map to place
the 4-KB sectors at the top of the array address map. The CFI geometry information of the above table is
relevant only to the initial delivery state of a hybrid sector device. The flash device driver software must
examine the TBPARM bit to determine if the sector map was inverted at a later time.
Table 60
Byte address
27h
Device geometry definition for 128-Mb and 256-Mb uniform sector devices
Data
Description
Device size = 2N bytes
18h (128 Mb)
19h (256 Mb)
28h
29h
02h
01h
Flash device interface description:
0000h = x8 only
0001h = x16 only
0002h = x8/x16 capable
0003h = x32 only
0004h = Single I/O SPI, 3-byte address
0005h = Multi I/O SPI, 3-byte address
0102h = Multi I/O SPI, 3- or 4-byte address
2Ah
2Bh
09h
00h
Max. number of bytes in multi-byte write = 2N
(0000 = not supported
0008h = 256B page
0009h = 512B page)
2Ch
2Dh
01h
Number of Erase Block Regions within device
1 = Uniform device, 2 = Boot device
Erase Block Region 1 Information (refer to JEDEC JEP137):
64 sectors = 64-1 = 003Fh (128 Mb)
128 sectors = 128-1 = 007Fh (256 Mb)
256-KB sectors = 256 bytes x 0400h
3Fh (128 Mb)
7Fh (256 Mb)
2Eh
2Fh
30h
00h
00h
04h
FFh
31h thru 3Fh
RFU
Datasheet
131
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 61
Byte address
40h
CFI primary vendor-specific extended query
Data
Description
50h
52h
49h
31h
33h
21h
Query-unique ASCII string “PRI”
41h
42h
43h
44h
Major version number = 1, ASCII
Minor version number = 3, ASCII
45h
Address Sensitive Unlock (Bits 1-0)
00b = Required
01b = Not Required
Process technology (Bits 5-2)
0000b = 0.23 µm Floating Gate
0001b = 0.17 µm Floating Gate
0010b = 0.23 µm MIRRORBIT™
0011b = 0.11 µm Floating Gate
0100b = 0.11 µm MIRRORBIT™
0101b = 0.09 µm MIRRORBIT™
1000b = 0.065 µm MIRRORBIT™
46h
02h
Erase Suspend
0 = Not Supported
1 = Read Only
2 = Read and Program
47h
48h
49h
01h
00h
08h
Sector Protect
00 = Not Supported
X = Number of sectors in group
Temporary Sector Unprotect
00 = Not Supported
01 = Supported
Sector Protect/Unprotect Scheme
04 = High Voltage Method
05 = Software Command Locking Method
08 = Advanced Sector Protection Method
09 = Secure
4Ah
4Bh
4Ch
00h
01h
xxh
Simultaneous Operation
00 = Not Supported
X = Number of Sectors
Burst Mode (Synchronous sequential read) support
00 = Not Supported
01 = Supported
Page Mode Type, model dependent
00 = Not Supported
01 = 4 Word Read Page
02 = 8 Read Word Page
03 = 256-Byte Program Page
04 = 512-Byte Program Page
4Dh
00h
ACC (Acceleration) Supply Minimum
00 = Not Supported, 100 mV
Datasheet
132
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 61
Byte address
4Eh
CFI primary vendor-specific extended query (continued)
Data
Description
00h
ACC (Acceleration) Supply Maximum
00 = Not Supported, 100 mV
4Fh
07h
01h
WP# Protection
01 = Whole Chip
04 = Uniform Device with Bottom WP Protect
05 = Uniform Device with Top WP Protect
07 = Uniform Device with Top or Bottom Write Protect (user
select)
50h
Program Suspend
00 = Not Supported
01 = Supported
The Alternate Vendor-Specific Extended Query provides information related to the expanded command set
provided by the FL-S family. The alternate query parameters use a format in which each parameter begins with
an identifier byte and a parameter length byte. Driver software can check each parameter ID and can use the
length value to skip to the next parameter if the parameter is not needed or not recognized by the software.
Table 62
Byte address
51h
CFI alternate vendor-specific extended query header
Data
Description
41h
4Ch
54h
32h
30h
Query-unique ASCII string “ALT”
52h
53h
54h
55h
Major version number = 2, ASCII
Minor version number = 0, ASCII
Datasheet
133
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 63
CFI alternate vendor-specific extended query parameter 0
Parameter relative
byte address offset
Data
Description
Parameter ID (Ordering Part Number)
Parameter Length (The number of following bytes in this parameter.
Adding this value to the current location value +1 = the first byte of the
next parameter)
00h
01h
00h
10h
02h
03h
04h
05h
06h
07h
53h
32h
35h
46h
4Ch
ASCII “S” for manufacturer (Infineon)
ASCII “25” for Product Characters (Single Die SPI)
ASCII “FL” for Interface Characters (SPI 3 Volt)
31h (128 Mb) ASCII characters for density
32h (256 Mb)
08h
09h
32h (128 Mb)
35h (256 Mb)
38h (128 Mb)
36h (256 Mb)
0Ah
0Bh
0Ch
0Dh
0Eh
0Fh
10h
11h
53h
xxh
ASCII “S” for technology (65-nm MIRRORBIT™)
Reserved for Future Use (RFU)
Table 64
CFI alternate vendor-specific extended query parameter 80h address options
Parameter relative
byte address offset
Data
Description
Parameter ID (address options)
Parameter Length (The number of following bytes in this parameter.
Adding this value to the current location value +1 = the first byte of the
next parameter)
00h
01h
80h
01h
02h
F0h
Bits 7:4 - Reserved = 1111b
Bit 3 - AutoBoot support - Ye s= 0b, No = 1b
Bit 2 - 4-byte address instructions supported - Yes = 0b, No = 1b
Bit 1 - Bank address + 3-byte address instructions supported - Yes = 0b,
No = 1b
Bit 0 - 3-byte address instructions supported - Yes = 0b, No = 1b
Datasheet
134
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 65
CFI alternate vendor-specific extended query parameter 84h suspend commands
Parameter relative
byte address offset
Data
Description
Parameter ID (Suspend Commands
Parameter Length (The number of following bytes in this
parameter. Adding this value to the current location value +1 = the
first byte of the next parameter)
00h
01h
84h
08h
02h
03h
04h
05h
06h
07h
08h
09h
85h
2Dh
8Ah
64h
75h
2Dh
7Ah
64h
Program suspend instruction code
Program suspend latency maximum (µs)
Program resume instruction code
Program resume to next suspend typical (µs)
Erase suspend instruction code
Erase suspend latency maximum (µs)
Erase resume instruction code
Erase resume to next suspend typical (µs)
Table 66
CFI alternate vendor-specific extended query parameter 88h data protection
Parameter relative
byte address offset
Data
Description
Parameter ID (Data Protection)
Parameter Length (The number of following bytes in this
parameter. Adding this value to the current location value +1 = the
first byte of the next parameter)
OTP size 2N bytes, FFh = not supported
OTP address map format, 01h = FL-S format, FFh = not supported
Block Protect Type, model dependent
00h = FL-P, FL-S, FFh = not supported
00h
01h
88h
04h
02h
03h
04h
0Ah
01h
xxh
05h
xxh
Advanced Sector Protection type, model dependent
01h = FL-S ASP
Table 67
CFI alternate vendor-specific extended query parameter 8Ch reset timing
Parameter relative
byte address offset
Data
Description
Parameter ID (Reset Timing)
Parameter Length (The number of following bytes in this
parameter. Adding this value to the current location value +1 = the
first byte of the next parameter)
00h
01h
8Ch
06h
02h
03h
04h
96h
01h
POR maximum value
POR maximum exponent 2N µs
Hardware Reset maximum value
FFh (without
separate RESET#)
23h (with separate
RESET #)
05h
06h
07h
00h
23h
00h
Hardware Reset maximum exponent 2N µs
Software Reset maximum value, FFh = not supported
Software Reset maximum exponent 2N µs
Datasheet
135
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 68
CFI alternate vendor-specific extended query parameter 90h - HPLC(SDR)
Parameter relative
byte address offset
Data
Description
Parameter ID (Latency Code Table)
Parameter Length (The number of following bytes in this
parameter. Adding this value to the current location value +1 = the
first byte of the next parameter)
00h
01h
90h
56h
02h
03h
04h
05h
06h
07h
08h
09h
0Ah
0Bh
0Ch
0Dh
0Eh
0Fh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
06h
0Eh
46h
43h
03h
13h
0Bh
0Ch
3Bh
3Ch
6Bh
6Ch
BBh
BCh
EBh
ECh
32h
03h
00h
00h
00h
00h
00h
00h
00h
00h
00h
04h
02h
01h
50h
00h
FFh
Number of rows
Row length in bytes
Start of header (row 1), ASCII “F” for frequency column header
ASCII “C” for Code column header
Read 3-byte address instruction
Read 4-byte address instruction
Read Fast 3-byte address instruction
Read Fast 4-byte address instruction
Read Dual Out 3-byte address instruction
Read Dual Out 4-byte address instruction
Read Quad Out 3-byte address instruction
Read Quad Out 4-byte address instruction
Dual I/O Read 3-byte address instruction
Dual I/O Read 4-byte address instruction
Quad I/O Read 3-byte address instruction
Quad I/O Read 4-byte address instruction
Start of row 2, SCK frequency limit for this row (50 MHz)
Latency Code for this row (11b)
Read mode cycles
Read latency cycles
Read Fast mode cycles
Read Fast latency cycles
Read Dual Out mode cycles
Read Dual Out latency cycles
Read Quad Out mode cycles
Read Quad Out latency cycles
Dual I/O Read mode cycles
Dual I/O Read latency cycles
Quad I/O Read mode cycles
Quad I/O Read latency cycles
Start of row 3, SCK frequency limit for this row (80 MHz)
Latency Code for this row (00b)
Read mode cycles (FFh = command not supported at this
frequency)
23h
FFh
Read latency cycles
Datasheet
136
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 68
CFI alternate vendor-specific extended query parameter 90h - HPLC(SDR) (continued)
Parameter relative
byte address offset
Data
Description
24h
25h
26h
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
00h
08h
00h
08h
00h
08h
00h
04h
02h
04h
5Ah
01h
FFh
Read Fast mode cycles
Read Fast latency cycles
Read Dual Out mode cycles
Read Dual Out latency cycles
Read Quad Out mode cycles
Read Quad Out latency cycles
Dual I/O Read mode cycles
Dual I/O Read latency cycles
Quad I/O Read mode cycles
Quad I/O Read latency cycles
Start of row 4, SCK frequency limit for this row (90 MHz)
Latency Code for this row (01b)
Read mode cycles (FFh = command not supported at this
frequency)
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
3Dh
3Eh
FFh
00h
08h
00h
08h
00h
08h
00h
05h
02h
04h
68h
02h
FFh
Read latency cycles
Read Fast mode cycles
Read Fast latency cycles
Read Dual Out mode cycles
Read Dual Out latency cycles
Read Quad Out mode cycles
Read Quad Out latency cycles
Dual I/O Read mode cycles
Dual I/O Read latency cycles
Quad I/O Read mode cycles
Quad I/O Read latency cycles
Start of row 5, SCK frequency limit for this row (104 MHz)
Latency Code for this row (10b)
Read mode cycles (FFh = command not supported at this
frequency)
3Fh
40h
41h
42h
43h
44h
45h
46h
47h
48h
FFh
00h
08h
00h
08h
00h
08h
00h
06h
02h
Read latency cycles
Read Fast mode cycles
Read Fast latency cycles
Read Dual Out mode cycles
Read Dual Out latency cycles
Read Quad Out mode cycles
Read Quad Out latency cycles
Dual I/O Read mode cycles
Dual I/O Read latency cycles
Quad I/O Read mode cycles
Datasheet
137
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 68
CFI alternate vendor-specific extended query parameter 90h - HPLC(SDR) (continued)
Parameter relative
byte address offset
Data
Description
Quad I/O Read latency cycles
Start of row 6, SCK frequency limit for this row (133 MHz)
Latency Code for this row (10b)
49h
4Ah
4Bh
4Ch
05h
85h
02h
FFh
Read mode cycles (FFh = command not supported at this
frequency)
4Dh
4Eh
4Fh
50h
51h
52h
53h
54h
55h
56h
57h
FFh
00h
08h
FFh
FFh
FFh
FFh
FFh
FFh
FFh
FFh
Read latency cycles
Read Fast mode cycles
Read Fast latency cycles
Read Dual Out mode cycles
Read Dual Out latency cycles
Read Quad Out mode cycles
Read Quad Out latency cycles
Dual I/O Read mode cycles
Dual I/O Read latency cycles
Quad I/O Read mode cycles
Quad I/O Read latency cycles
Table 69
CFI alternate vendor-specific extended query parameter 9Ah - HPLC DDR
Parameter relative
byte address offset
Data
Description
Parameter ID (Latency Code Table)
Parameter Length (The number of following bytes in this
parameter. Adding this value to the current location value +1 = the
first byte of the next parameter)
00h
01h
9Ah
2Ah
02h
03h
04h
05h
06h
07h
08h
09h
0Ah
0Bh
0Ch
0Dh
0Eh
0Fh
10h
11h
05h
08h
46h
43h
0Dh
0Eh
BDh
BEh
EDh
EEh
32h
03h
00h
04h
00h
04h
Number of rows
Row length in bytes
Start of header (row 1), ASCII “F” for frequency column header
ASCII “C” for Code column header
Read Fast DDR 3-byte address instruction
Read Fast DDR 4-byte address instruction
DDR Dual I/O Read 3-byte address instruction
DDR Dual I/O Read 4-byte address instruction
Read DDR Quad I/O 3-byte address instruction
Read DDR Quad I/O 4-byte address instruction
Start of row 2, SCK frequency limit for this row (50 MHz)
Latency Code for this row (11b)
Read Fast DDR mode cycles
Read Fast DDR latency cycles
DDR Dual I/O Read mode cycles
DDR Dual I/O Read latency cycles
Datasheet
138
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 69
CFI alternate vendor-specific extended query parameter 9Ah - HPLC DDR (continued)
Parameter relative
byte address offset
Data
Description
Read DDR Quad I/O mode cycles
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Ah
2Bh
01h
03h
42h
00h
00h
05h
00h
06h
01h
06h
42h
01h
00h
06h
00h
07h
01h
07h
42h
02h
00h
07h
00h
08h
01h
08h
Read DDR Quad I/O latency cycles
Start of row 3, SCK frequency limit for this row (66 MHz)
Latency Code for this row (00b)
Read Fast DDR mode cycles
Read Fast DDR latency cycles
DDR Dual I/O Read mode cycles
DDR Dual I/O Read latency cycles
Read DDR Quad I/O mode cycles
Read DDR Quad I/O latency cycles
Start of row 4, SCK frequency limit for this row (66 MHz)
Latency Code for this row (01b)
Read Fast DDR mode cycles
Read Fast DDR latency cycles
DDR Dual I/O Read mode cycles
DDR Dual I/O Read latency cycles
Read DDR Quad I/O mode cycles
Read DDR Quad I/O latency cycles
Start of row 5, SCK frequency limit for this row (66 MHz)
Latency Code for this row (10b)
Read Fast DDR mode cycles
Read Fast DDR latency cycles
DDR Dual I/O Read mode cycles
DDR Dual I/O Read latency cycles
Read DDR Quad I/O mode cycles
Read DDR Quad I/O latency cycles
Table 70
CFI alternate vendor-specific extended query parameter 90h - EHPLC (SDR)
Parameter relative
byte address offset
Data
Description
Parameter ID (Latency Code Table)
Parameter Length (The number of following bytes in this
parameter. Adding this value to the current location value +1 = the
first byte of the next parameter)
00h
01h
90h
56h
02h
03h
04h
05h
06h
07h
06h
0Eh
46h
43h
03h
13h
Number of rows
Row length in bytes
Start of header (row 1), ASCII “F” for frequency column header
ASCII “C” for Code column header
Read 3-byte address instruction
Read 4-byte address instruction
Datasheet
139
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 70
CFI alternate vendor-specific extended query parameter 90h - EHPLC (SDR) (continued)
Parameter relative
byte address offset
Data
Description
08h
09h
0Ah
0Bh
0Ch
0Dh
0Eh
0Fh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
0Bh
0Ch
3Bh
3Ch
6Bh
6Ch
BBh
BCh
EBh
ECh
32h
03h
00h
00h
00h
00h
00h
00h
00h
00h
04h
00h
02h
01h
50h
00h
FFh
Read Fast 3-byte address instruction
Read Fast 4-byte address instruction
Read Dual Out 3-byte address instruction
Read Dual Out 4-byte address instruction
Read Quad Out 3-byte address instruction
Read Quad Out 4-byte address instruction
Dual I/O Read 3-byte address instruction
Dual I/O Read 4-byte address instruction
Quad I/O Read 3-byte address instruction
Quad I/O Read 4-byte address instruction
Start of row 2, SCK frequency limit for this row (50 MHz)
Latency Code for this row (11b)
Read mode cycles
Read latency cycles
Read Fast mode cycles
Read Fast latency cycles
Read Dual Out mode cycles
Read Dual Out latency cycles
Read Quad Out mode cycles
Read Quad Out latency cycles
Dual I/O Read mode cycles
Dual I/O Read latency cycles
Quad I/O Read mode cycles
Quad I/O Read latency cycles
Start of row 3, SCK frequency limit for this row (80 MHz)
Latency Code for this row (00b)
Read mode cycles (FFh = command not supported at this
frequency)
23h
24h
25h
26h
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
FFh
00h
08h
00h
08h
00h
08h
04h
00h
02h
04h
Read latency cycles
Read Fast mode cycles
Read Fast latency cycles
Read Dual Out mode cycles
Read Dual Out latency cycles
Read Quad Out mode cycles
Read Quad Out latency cycles
Dual I/O Read mode cycles
Dual I/O Read latency cycles
Quad I/O Read mode cycles
Quad I/O Read latency cycles
Datasheet
140
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 70
CFI alternate vendor-specific extended query parameter 90h - EHPLC (SDR) (continued)
Parameter relative
byte address offset
Data
Description
2Eh
2Fh
30h
5Ah
01h
FFh
Start of row 4, SCK frequency limit for this row (90 MHz)
Latency Code for this row (01b)
Read mode cycles (FFh = command not supported at this
frequency)
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
3Dh
3Eh
FFh
00h
08h
00h
08h
00h
08h
04h
01h
02h
04h
68h
02h
FFh
Read latency cycles
Read Fast mode cycles
Read Fast latency cycles
Read Dual Out mode cycles
Read Dual Out latency cycles
Read Quad Out mode cycles
Read Quad Out latency cycles
Dual I/O Read mode cycles
Dual I/O Read latency cycles
Quad I/O Read mode cycles
Quad I/O Read latency cycles
Start of row 5, SCK frequency limit for this row (104 MHz)
Latency Code for this row (10b)
Read mode cycles (FFh = command not supported at this
frequency)
3Fh
40h
41h
42h
43h
44h
45h
46h
47h
48h
49h
4Ah
4Bh
4Ch
FFh
00h
08h
00h
08h
00h
08h
04h
02h
02h
05h
85h
02h
FFh
Read latency cycles
Read Fast mode cycles
Read Fast latency cycles
Read Dual Out mode cycles
Read Dual Out latency cycles
Read Quad Out mode cycles
Read Quad Out latency cycles
Dual I/O Read mode cycles
Dual I/O Read latency cycles
Quad I/O Read mode cycles
Quad I/O Read latency cycles
Start of row 6, SCK frequency limit for this row (133 MHz)
Latency Code for this row (10b)
Read mode cycles (FFh = command not supported at this
frequency)
4Dh
4Eh
4Fh
50h
51h
52h
FFh
00h
08h
FFh
FFh
FFh
Read latency cycles
Read Fast mode cycles
Read Fast latency cycles
Read Dual Out mode cycles
Read Dual Out latency cycles
Read Quad Out mode cycles
Datasheet
141
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 70
CFI alternate vendor-specific extended query parameter 90h - EHPLC (SDR) (continued)
Parameter relative
byte address offset
Data
Description
Read Quad Out latency cycles
Dual I/O Read mode cycles
Dual I/O Read latency cycles
Quad I/O Read mode cycles
Quad I/O Read latency cycles
53h
54h
55h
56h
57h
FFh
FFh
FFh
FFh
FFh
Table 71
CFI alternate vendor-specific extended query parameter 9Ah - EHPLC DDR
Parameter relative
byte address offset
Data
Description
Parameter ID (Latency Code Table)
Parameter Length (The number of following bytes in this
parameter. Adding this value to the current location value +1 = the
first byte of the next parameter)
00h
01h
9Ah
2Ah
02h
03h
04h
05h
06h
07h
08h
09h
0Ah
0Bh
0Ch
0Dh
0Eh
0Fh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
1Bh
1Ch
05h
08h
46h
43h
0Dh
0Eh
BDh
BEh
EDh
EEh
32h
03h
04h
01h
02h
02h
01h
03h
42h
00h
04h
02h
02h
04h
01h
06h
42h
Number of rows
Row length in bytes
Start of header (row 1), ASCII “F” for frequency column header
ASCII “C” for Code column header
Read Fast DDR 3-byte address instruction
Read Fast DDR 4-byte address instruction
DDR Dual I/O Read 3-byte address instruction
DDR Dual I/O Read 4-byte address instruction
Read DDR Quad I/O 3-byte address instruction
Read DDR Quad I/O 4-byte address instruction
Start of row 2, SCK frequency limit for this row (50 MHz)
Latency Code for this row (11b)
Read Fast DDR mode cycles
Read Fast DDR latency cycles
DDR Dual I/O Read mode cycles
DDR Dual I/O Read latency cycles
Read DDR Quad I/O mode cycles
Read DDR Quad I/O latency cycles
Start of row 3, SCK frequency limit for this row (66 MHz)
Latency Code for this row (00b)
Read Fast DDR mode cycles
Read Fast DDR latency cycles
DDR Dual I/O Read mode cycles
DDR Dual I/O Read latency cycles
Read DDR Quad I/O mode cycles
Read DDR Quad I/O latency cycles
Start of row 4, SCK frequency limit for this row (66 MHz)
Datasheet
142
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 71
CFI alternate vendor-specific extended query parameter 9Ah - EHPLC DDR (continued)
Parameter relative
byte address offset
Data
Description
Latency Code for this row (01b)
Read Fast DDR mode cycles
Read Fast DDR latency cycles
DDR Dual I/O Read mode cycles
DDR Dual I/O Read latency cycles
Read DDR Quad I/O mode cycles
Read DDR Quad I/O latency cycles
Start of row 5, SCK frequency limit for this row (66 MHz)
Latency Code for this row (10b)
Read Fast DDR mode cycles
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Ah
2Bh
01h
04h
04h
02h
05h
01h
07h
42h
02h
04h
05h
02h
06h
01h
08h
Read Fast DDR latency cycles
DDR Dual I/O Read mode cycles
DDR Dual I/O Read latency cycles
Read DDR Quad I/O mode cycles
Read DDR Quad I/O latency cycles
Table 72
CFI alternate vendor-specific extended query parameter F0h RFU
Parameter relative
byte address offset
Data
Description
00h
01h
F0h
0Fh
Parameter ID (RFU)
Parameter Length (The number of following bytes in this
parameter. Adding this value to the current location value +1 = the
first byte of the next parameter)
02h
...
10h
FFh
FFh
FFh
RFU
RFU
RFU
This parameter type (Parameter ID F0h) may appear multiple times and have a different length each time. The
parameter is used to reserve space in the ID-CFI map or to force space (pad) to align a following parameter to a
required boundary.
Datasheet
143
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
13.3
Device ID and common flash interface (ID-CFI) ASO map — Automotive
only
The CFI Primary Vendor-Specific Extended Query is extended to include Electronic Marking information for device
traceability.
Example
# of
Data
Address
Data field
of actual
data
Hex read out of example data
bytes format
(SA) + 0180h Size of Electronic Marking
(SA) + 0181h Revision of Electronic
Marking
1
1
Hex
Hex
20
1
14h
01h
(SA) + 0182h Fab Lot #
(SA) + 018Ah Wafer #
(SA) + 018Bh Die X Coordinate
(SA) + 018Ch Die Y Coordinate
(SA) + 018Dh Class Lot #
8
1
1
1
7
ASCII
Hex
Hex
Hex
ASCII
N/A
LD87270 4Ch, 44h, 38h, 37h, 32h, 37h, 30h, FFh
23
10
15
17h
0Ah
0Fh
BR33150 42h, 52h, 33h, 33h, 31h, 35h, 30h
(SA) + 0194h Reserved for Future
12
N/A
FFh, FFh, FFh, FFh, FFh, FFh, FFh, FFh,
FFh, FFh, FFh, FFh
Fab Lot # + Wafer # + Die X Coordinate + Die Y Coordinate gives a unique ID for each device.
13.4
Registers
The register maps are copied in this section as a quick reference. See Registers for the full description of the
register contents.
Table 73
Status Register 1 (SR1)
Bits Field name
Function
Type
Default state
Description
7
SRWD
Status
Register Write
Disable
Non-volatile
0
1 = Locks state of SRWD, BP, and configu-
ration register bits when WP# is LOW by
ignoring WRR command
0 = No protection, even when WP# is LOW
6
5
P_ERR
E_ERR
Programming Volatile, Read
0
0
1 = Error occurred
0 = No error
Error
only
Occurred
Erase Error Volatile, Read
1= Error occurred
0 = No error
Occurred
only
4
3
2
BP2
BP1
BP0
Block
Volatile if
1 if CR1[3] = 1, Protects selected range of sectors (Block)
Protection
CR1[3] = 1,
0 when
from Program or Erase
Non-Volatileif shipped from
CR1[3] = 0
Volatile
Infineon
0
1
WEL
Write Enable
Latch
1 = Device accepts Write Registers (WRR),
program or erase commands
0 = Device ignores Write Registers (WRR),
program or erase commands
This bit is not affected by WRR, only WREN
and WRDI commands affect this bit.
0
WIP
Write in
Progress
Volatile, Read
only
0
1= Device Busy, a Write Registers (WRR),
program, erase or other operation is in
progress
0 = Ready Device is in standby mode and can
accept commands
Datasheet
144
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 74
Configuration Register (CR1)
Function Type
Latency Code Non-Volatile
Bits Field name
7
6
Defaultstate
Description
LC1
LC0
0
0
Selects number of initial read latency cycles
See Latency Code tables (Table 26 through
Table 29)
5
TBPROT
Configures
Start of Block
Protection
OTP
0
1 = BP starts at bottom (Low address)
0 = BP starts at top (High address)
4
3
RFU
BPNV
RFU
OTP
OTP
0
0
Reserved for Future Use
1 = Volatile
0 = Non-volatile
Configures
BP2-0 in
Status
Register
2
1
0
TBPARM
QUAD
Configures
Parameter
Sectors
OTP
0
0
0
1 = 4-KB physical sectors at top, (high
address)
0 = 4-KB physical sectors at bottom (Low
address) RFU in uniform sector devices.
location
Puts the
device into
Quad I/O
operation
Lock current
state of BP2-0
bits in Status
Register,
TBPROT and
TBPARM in
Non-Volatile
Volatile
1 = Quad
0 = Dual or Serial
FREEZE
1 = Block Protection and OTP locked
0 = Block Protection and OTP un-locked
Configuration
Register, and
OTP regions
Table 75
Status Register 2 (SR2)
Bits Field name
Function
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Type
Defaultstate
Description
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
7
6
5
4
3
2
1
RFU
RFU
RFU
RFU
RFU
RFU
ES
0
0
0
0
0
0
0
Erase
Suspend
Volatile, Read
only
1 = In erase suspend mode.
0 = Not in erase suspend mode.
0
PS
Program
Suspend
Volatile, Read
only
0
1 = In program suspend mode.
0 = Not in program suspend mode.
Datasheet
145
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 76
Bank Address Register (BAR)
Bits Field name
Function
Type
Default state
Description
7
EXTADD
Extended
Address
Enable
Volatile
0b
1 = 4-byte (32 bits) addressing required from
command.
0 = 3-byte (24 bits) addressing from
command + Bank Address
6 to 2
1
0
RFU
BA25
BA24
Reserved
Bank Address
Bank Address
Volatile
Volatile
Volatile
00000b
Reserved for Future Use
RFU for lower density devices
0
0
A24 for 256-Mb device, RFU for lower
density device
Table 77
ASP Register (ASPR)
Bits Field name
Function
Type
Default state
Description
15 to
9
RFU
Reserved
OTP
1
Reserved for Future Use
[59]
8
7
6
5
4
3
2
RFU
RFU
RFU
RFU
RFU
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
OTP
OTP
OTP
OTP
OTP
OTP
OTP
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
Reserved for Future Use
0 = Password Protection Mode Permanently
Enabled.
1 = Password Protection Mode not
Permanently Enabled.
1
[59]
RFU
PWDMLB
Password
Protection
Mode Lock Bit
1
1
1
1
PSTMLB
RFU
Persistent
Protection
Mode Lock Bit
OTP
0 = Persistent Protection Mode Permanently
Enabled.
1 = Persistent Protection Mode not
Permanently Enabled.
0
Reserved
OTP
Reserved for Future Use
Note
59. Default value depends on ordering part number, see Initial delivery state.
Table 78
Password Register (PASS)
Bits Field name
Function
Type
Default state
Description
63 to
0
PWD
Hidden
Password
OTP
FFFFFFFF- Non-volatile OTP storage of 64-bit
FFFFFFFFh password. The password is no longer
readable after the password protection
mode is selected by programming ASP
register bit ‘2’ to ‘0’.
Datasheet
146
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Device identification
Table 79
PPB Lock Register (PPBL)
Bits Field name
Function
Reserved
Protect PPB
Array
Type
Volatile
Volatile
Default state
Description
Reserved for Future Use
7 to 1
0
RFU
PPBLOCK
00h
Persistent 0 = PPB array protected until next power
Protection cycle or hardware reset
Mode = 1
Password
Protection
Mode = 0
1 = PPB array may be programmed or erased
Table 80
PPB Access Register (PPBAR)
Bits Field name
Function
Type
Defaultstate
Description
7 to 0
PPB
Read or
Program per
sector PPB
Non-volatile
FFh
00h = PPB for the sector addressed by the
PPBRD or PPBP command is programmed to
‘0’, protecting that sector from program or
erase operations.
FFh = PPB for the sector addressed by the
PPBRD or PPBP command is erased to ‘1’,
not protecting that sector from program or
erase operations.
Table 81
DYB Access Register (DYBAR)
Bits Field name
Function
Type
Default state
Description
7to0
DYB
Read or Write
per sector DYB
Volatile
FFh
00h = DYB for the sector addressed by the
DYBRD or DYBP command is cleared to ‘0’,
protecting that sector from program or
erase operations.
FFh = DYB for the sector addressed by the
DYBRD or DYBP command is set to ‘1’, not
protecting that sector from program or
erase operations.
Table 82
Non-Volatile Data Learning Register (NVDLR)
Bits Field name
Function
Type
Defaultstate
Description
7to0
NVDLP
Non-Volatile
Data Learning
Pattern
OTP
00h
OTP value that may be transferred to the
host during DDR read command latency
(dummy) cycles to provide a training pattern
to help the host more accurately center the
data capture point in the received data bits.
Table 83
Volatile Data Learning Register (NVDLR)
Bits Field name
Function
Type
Default state
Description
7 to
0
VDLP
Volatile Data
Learning
Pattern
Volatile
Takes the Volatile copy of the NVDLP used to enable
value of
and deliver the Data Learning Pattern (DLP)
NVDLRduring to the outputs. The VDLP may be changed by
POR or Reset the host during system operation.
Datasheet
147
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Initial delivery state
14
Initial delivery state
The device is shipped from Infineon with non-volatile bits set as follows:
• The entire memory array is erased: i.e., all bits are set to 1 (each byte contains FFh).
• The OTP address space has the first 16 bytes programmed to a random number. All other bytes are erased to FFh.
• The ID-CFI address space contains the values as defined in the description of the ID-CFI address space.
• The Status Register 1 contains 00h (all SR1 bits are cleared to 0’s).
• The Configuration Register 1 contains 00h.
• The Autoboot register contains 00h.
• The Password Register contains FFFFFFFF-FFFFFFFFh.
• All PPB bits are ‘1’.
• The ASP Register contents depend on the ordering options selected:
Table 84
ASP Register content
Ordering part number model
ASPR default value
00, 20, 30, R0, A0, B0, C0, D0, 01, 21, 31, R1, A1, B1, C1,
D1, 90, Q0, 70, 60, 80, 91, Q1, 71, 61, 81, G0, G1, 40, 41,
H0, H1, E0, E1, F0, F1
FE7Fh
Datasheet
148
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Physical interface
15
Table 85
Physical interface
Model specific connections[60]
VIO / RFU
Versatile I/O or RFU — Some device models bond this connector to the device I/O
power supply, other models bond the device I/O supply to Vcc within the package
leaving this package connector unconnected.
RESET# / RFU
RESET# or RFU — Some device models bond this connector to the device RESET#
signal, other models bond the RESET# signal to Vcc within the package leaving this
package connector unconnected.
Note
60. See Table 2 for signal descriptions.
Datasheet
149
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Package diagrams
16
Package diagrams
A-B
C
0.20
0.10
C
D
2X
0.33
C
0.25
0.10
M
C A-B D
C
0.10
C
DIMENSIONS
NOTES:
SYMBOL
MIN.
NOM.
MAX.
2.65
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
A
A1
A2
b
2.35
0.10
2.05
-
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
THE PLASTIC BODY.
-
0.30
2.55
0.51
0.48
-
0.31
0.27
0.20
0.20
-
b1
c
-
0.33
0.30
-
-
c1
5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
PACKAGE LENGTH.
7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
0.25 mm FROM THE LEAD TIP.
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
LOWER RADIUS OF THE LEAD FOOT.
D
E
10.30 BSC
10.30 BSC
7.50 BSC
E1
e
1.27 BSC
-
L
1.27
0.40
L1
L2
N
9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
SEATING PLANE.
1.40 REF
0.25 BSC
16
h
0.25
0°
-
-
-
-
0.75
8°
0
0 1
0 2
5°
15°
-
0°
002-15547 *A
Figure 129
S03016 — 16-lead wide plastic small outline package (300-mil body width)
Datasheet
150
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Package diagrams
NOTES:
DIMENSIONS
SYMBOL
e
1. DIMENSIONING AND TOLERANCING CONFORMS TO ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. N IS THE TOTAL NUMBER OF TERMINALS.
MIN.
0.45
NOM.
MAX.
0.55
1.27 BSC.
8
4
0.50
N
ND
4
DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS
THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE
DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA.
ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE.
L
b
D2
E2
D
0.35
4.70
4.55
0.40
4.80
0.45
4.90
4.75
5
4.65
6.00 BSC
6. MAX. PACKAGE WARPAGE IS 0.05mm.
7.
MAXIMUM ALLOWABLE BURR IS 0.076mm IN ALL DIRECTIONS.
PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE.
BILATERAL COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK
SLUG AS WELL AS THE TERMINALS.
E
A
A1
8.00 BSC
0.75
0.02
8
9
0.70
0.00
0.80
0.05
0.20 REF
A3
K
10 A MAXIMUM 0.15mm PULL BACK (L1) MAY BE PRESENT.
0.20 MIN.
002-18827 **
Figure 130
WNG008 — WSON 8-contact (68 mm) no-lead package
Datasheet
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001-98283 Rev. *S
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Package diagrams
NOTES:
DIMENSIONS
SYMBOL
MIN.
NOM.
MAX.
1.
2.
3.
DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE IN MILLIMETERS.
A
A1
D
-
-
-
1.20
-
0.20
BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
8.00 BSC
4.
5.
e REPRESENTS THE SOLDER BALL GRID PITCH.
E
6.00 BSC
4.00 BSC
4.00 BSC
5
D1
E1
MD
ME
N
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
5
6
7
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE
PARALLEL TO DATUM C.
24
0.40
b
0.35
0.45
"SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
eE
eD
SD
SE
1.00 BSC
1.00 BSC
0.00 BSC
0.00 BSC
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND
"SE" = eE/2.
8.
9.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,
METALLIZED MARK INDENTATION OR OTHER MEANS.
002-15534 **
Figure 131
FAB024 — 24-ball BGA (8 6 mm) package
Datasheet
152
001-98283 Rev. *S
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Package diagrams
NOTES:
DIMENSIONS
SYMBOL
MIN.
-
NOM.
MAX.
1.20
-
1.
2.
3.
DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE IN MILLIMETERS.
A
A1
D
-
-
0.25
BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
8.00 BSC
4.
5.
e
REPRESENTS THE SOLDER BALL GRID PITCH.
E
6.00 BSC
5.00 BSC
3.00 BSC
6
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
D1
E1
MD
ME
N
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
4
6
7
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE
PARALLEL TO DATUM C.
24
0.40
b
0.35
0.45
"SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
eE
eD
SD
SE
1.00 BSC
1.00 BSC
0.50 BSC
0.50 BSC
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND
"SE" = eE/2.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
8.
9.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,
METALLIZED MARK INDENTATION OR OTHER MEANS.
002-15535 *A
Figure 132
FAC024 — 24-ball BGA (6 8 mm) package
Datasheet
153
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Ordering information
17
Ordering information
17.1
Ordering part number
The ordering part number is formed by a valid combination of the following:
S25FL
064
S
AG
M
F
I
0
0 1
Packing type
0 = Tray
1 = Tube
3 = 13" Tape and reel
Model number (Sector type)
0 = Uniform 64-KB sectors with Hybrid 4-KB sectors
1 = Uniform 256-KB sectors
Model number (Latency type, package details, RESET# and V_IO support)
0 = EHPLC, SO/WSON footprint
2 = EHPLC, 5 × 5 ball BGA footprint
3 = EHPLC, 4 × 6 ball BGA footprint
G = EHPLC, SO footprint with RESET#
R = EHPLC, SO footprint with RESET# and VIO
A = EHPLC, 5 × 5 ball BGA footprint with RESET# and VIO
B = EHPLC, 4 × 6 ball BGA footprint with RESET# and VIO
C = EHPLC, 5 × 5 ball BGA footprint with RESET#
D = EHPLC, 4 × 6 ball BGA footprint with RESE T#
9 = HPLC, SO/WSON footprint
4 = HPLC, 5 × 5 ball BGA footprint
8 = HPLC, 4 × 6 ball BGA footprint
H = HPLC, SO footprint with RESET#
Q = HPLC, SO footprint with RESET# and VIO
7 = HPLC, 5 × 5 ball BGA footprint with RESET# and VIO
6 = HPLC, 4 × 6 ball BGA footprint with RESET# and VIO
E = HPLC, 5 × 5 ball BGA footprint with RESET#
F = HPLC, 4 × 6 ball BGA footprint with RESET#
Temperature range/grade
I = Industrial (-40°C to +85°C)
V = Industrial Plus (-40°C to + 105°C)
A = Automotive, AEC-Q100 grade 3 (-40°C to +85°C)
B = Automotive, AEC-Q100 grade 2 (-40°C to +105°C)
M = Automotive, AEC-Q100 grade 1 (-40°C to +125°C)
Package material
H = Halogen-free, Lead (Pb)-free
F = Halogen-free, Lead (Pb)-free
Package type
M = 16-pin SO package
N = 8-contact WSON 6 x 8 mm package
B = 24-ball BGA 6 x 8 mm package, 1.00 mm pitch
Speed
AG = 133 MHz
DP = 66 MHz DDR
DS = 80 MHz DDR
Technology
S = 65-nm MIRRORBIT™ process technology
Density
128 = 128 Mb
256 = 256 Mb
Device family
S25FL 3 V, Serial Peripheral Interface (SPI) flash memory
Notes
61. EHPLC = Enhanced High Performance Latency Code table.
62. HPLC = High Performance Latency Code table.
63. Uniform 64-KB sectors = A hybrid of 32 x 4-KB sectors with all remaining sectors being 64 KB, with a 256B
programming buffer.
64. Uniform 256-KB sectors = All sectors are uniform 256-KB with a 512B programming buffer.
65. Halogen free definition is in accordance with IEC 61249-2-21 specification.
Datasheet
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001-98283 Rev. *S
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Ordering information
17.2
Valid combinations — Standard
Valid combinations list configurations planned to be supported in volume for this device. Contact your local sales
office to confirm availability of specific valid combinations and to check on newly released combinations.
Table 86
Base
S25FL128S/S25FL256S valid combinations — Standard
ordering Speed Package and
Packing
type
Model number
Package marking[66]
part
option temperature
number
S25FL128S
or
S25FL256S
AG
MFI, MFV
NFI, NFV
BHI, BHV
00, 01, G0, G1, R0,
R1
0, 1, 3
0, 1, 3
0, 3
FL + (Density) + SA + (Temp) + F +
(Model Number)
FL + (Density) + SA + (Temp) + F +
(Model Number)
FL + (Density) + SA + (Temp) + H +
(Model Number)
00, 01
20, 21, 30, 31, A0,
A1, B0, B1, C0, C1,
D0, D1
DP
DS
MFI
MFV
NFI, NFV
G0, G1
00, 01
00
0, 1, 3
0, 1, 3
0, 1, 3
FL + (Density) + SD + (Temp) + F +
(Model Number)
FL + (Density) + SD + (Temp) + F +
(Model Number)
FL + (Density) + SD + (Temp) + H +
(Model Number)
FL + (Density) + SS + (Temp) + F +
(Model Number)
FL + (Density) + SS + (Temp) + F +
(Model Number)
BHI, BHV
MFI, MFV
NFI, NFV
BHI, BHV
21, C0, C1, D1
0, 3
0, 1, 3
0, 1, 3
0, 3
00, 01, G0, G1, R0,
R1
00, 01
20, 21, 30, 31, A0,
A1, B0, B1, C0, C1,
D0, D1
FL + (Density) + SS + (Temp) + H +
(Model Number)
Notes
66. Example, S25FL256SAGMFI000 package marking would be FL256SAIF00.
67. Contact the factory for additional Extended (-40°C to + 125°C) temperature range OPN offerings.
Datasheet
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001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Ordering information
17.3
Valid combinations — Automotive grade / AEC-Q100
The table below lists configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be
available in volume. The table will be updated as new combinations are released. Contact your local sales repre-
sentative to confirm availability of specific combinations and to check on newly released combinations.
Production Part Approval Process (PPAP) support is only provided for AEC-Q100 grade products.
Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade
products in combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full
compliance with ISO/TS-16949 requirements.
AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require
ISO/TS-16949 compliance.
Table 87
Base
S25FL128S, S25FL256S valid combinations — Automotive grade / AEC-Q100
ordering Speed Package and
Packing
type
Model number
Package marking
part
option temperature
number
S25FL128S
or
S25FL256S
AG
MFA, MFB,
MFM
NFA, NFB,
NFM
BHA, BHB,
BHM
00, 01, G0, G1, R0,
R1
0, 1, 3
0, 1, 3
0, 3
FL + (Density) + SA + (Temp) + F +
(Model Number)
FL + (Density) + SA + (Temp) + F +
(Model Number)
FL + (Density) + SA + (Temp) + H +
(Model Number)
00, 01
20, 21, 30, 31, A0,
A1, B0, B1, C0, C1,
D0, D1
DP
DS
NFB
BHB
MFB
00
21, C0
01
0, 1, 3
0, 3
FL + (Density) + SD + (Temp) + F +
(Model Number)
FL + (Density) + SD + (Temp) + H +
(Model Number)
FL + (Density) + SD + (Temp) + F +
(Model Number)
FL + (Density) + SS + (Temp) + F +
(Model Number)
FL + (Density) + SS + (Temp) + F +
(Model Number)
FL + (Density) + SS + (Temp) + H +
(Model Number)
0, 1, 3
0, 1, 3
0, 1, 3
0, 3
MFA, MFB,
MFM
NFA, NFB,
NFM
BHA, BHB,
BHM
00, 01, G0, G1, R0,
R1
00, 01
20, 21, 30, 31, A0,
A1, B0, B1, C0, C1,
D0, D1
Datasheet
156
001-98283 Rev. *S
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Acronyms
18
Acronyms
Table 88
Acronyms used in this document
Acronym
Description
Command
All information transferred between the host system and memory during one period
while CS# is LOW. This includes the instruction (sometimes called an operation code
or opcode) and any required address, mode bits, latency cycles, or data.
DDP
Two die stacked within the same package to increase the memory capacity of a single
package. Often also referred to as a multi-chip package (MCP).
(Dual die package)
DDR
When input and output are latched on every edge of SCK.
(Double data rate)
ECC
ECC unit = 16-byte aligned and length data groups in the main flash array and OTP
array, each of which has its own hidden ECC syndrome to enable error correction on
each group.
Flash
The name for a type of EEPROM that erases large blocks of memory bits in parallel,
making the erase operation much faster than early EEPROM.
High
A signal voltage level ≥ VIH or a logic level representing a binary one (‘1’).
Instruction
The 8-bit code indicating the function to be performed by a command (sometimes
called an operation code or opcode). The instruction is always the first 8-bits trans-
ferred from host system to the memory in any command.
Low
A signal voltage level VIL or a logic level representing a binary zero (‘0’).
LSb
The right most bit, with the lowest order of magnitude value, within a group of bits of
a register or data value.
(Least significant bit)
MSb
The left most bit, with the highest order of magnitude value, within a group of bits of
a register or data value.
(Most significant bit)
LSB
The right most byte, within a group of bytes.
(Least significant byte)
MSB
The left most bit, within a group of bytes
(Most significant byte)
Non-volatile
OPN
No power is needed to maintain data stored in the memory.
The alphanumeric string specifying the memory device type, density, package, factory
(Ordering part number) non-volatile configuration, etc., used to select the desired device.
Page
512-bytes or 256-bytes aligned and length group of data. The size assigned for a page
depends on the ordering part number.
PCB
printed circuit board
PPAP
production part approval process
Register bit references
Are in the format: Register_name[bit_number] or Register_name[bit_range_MSb:
bit_range_LSB]
SDR
When input is latched on the rising edge and output on the falling edge of SCK.
(Single data rate)
Datasheet
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001-98283 Rev. *S
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Acronyms
Table 88
Acronyms used in this document (continued)
Acronym
Description
Sector
Write
Erase unit size; depending on device model and sector location this may be 4 KB, 64 KB
or 256 KB.
An operation that changes data within volatile or non-volatile registers bits or
non-volatile flash memory. When changing non-volatile data, an erase and repro-
gramming of any unchanged non-volatile data is done, as part of the operation, such
that the non-volatile data is modified by the write operation, in the same way that
volatile data is modified – as a single operation. The non-volatile data appears to the
host system to be updated by the single write command, without the need for
separate commands for erase and reprogram of adjacent, but unaffected data.
Datasheet
158
001-98283 Rev. *S
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Revision history
Revision history
Document
Date
Description of changes
revision
**
*A
2011-05-25
2011-11-18
Initial release
Global:
Promoted datasheet to Preliminary status
Corrected minor typos and grammatical errors
Performance Summary:
Updated the Serial Read 50 MHz current consumption value from 14 mA (max)
to 16 mA (max)
Updated the Serial Read 133 MHz current consumption value from 25 mA (max)
to 33 mA (max)
Power-Up and Power-DownRemoved the statement “The device draws ICC1 (50
MHz value) during tPU”
DC Characteristics:
Updated the ICC1 Active Power Supply Current (READ) Serial SDR @ 50 MHz
maximum value from 14 mA to 16 mA
Updated the ICC1 Active Power Supply Current (READ) Serial SDR @ 133 MHz
maximum value from 25 mA to 33 mA
SDR AC Characteristics:
Added the tCSH CS# Active Hold Time (Relative to SCK) maximum value of 3000
ns, with a note indicating that this only applies during the Program/Erase
Suspend/Resume commands
DDR AC Characteristics: Added the tCSH CS# Active Hold Time (Relative to SCK)
maximum value of 3000 ns, with a note indicating that this only applies during
the Program/Erase Suspend/Resume commands
Capacitance Characteristics: Added a Note 1, pointing users to the IBIS models
for more details on capacitance
Physical Interface:
Corrected pin 5 of the SOIC 16 Connection Diagram from NC to DNU
Corrected pin 13 of the SOIC 16 Connection Dig ram from DNU to NC
Replaced the WNF008 drawing with the WNG008 drawing
Updated the FAB024 drawing to the latest version
ASP Register: Corrected the statement “The programming time of the ASP
Register is the same as the typical byte programming time” to “The
programming time of the ASP Register is the same as the typical page
programming time”
Persistent Protection Bits: Corrected the statement “Programming a PPB bit
requires the typical byte programming time” to “Programming a PPB bit
requires the typical page programming time”
Register Read or Write:
Corrected the statement “…the device remains busy and unable to receive most
new operation commands.” to “..the device remains busy. Under this condition,
only the CLSR, WRDI, RDSR1, RDSR2, and software RESET commands are valid
commands.”
Datasheet
159
001-98283 Rev. *S
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128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Revision history
Document
Date
Description of changes
revision
*A (Cont)
2011-11-18
Page Program (PP 02h or 4PP 12h):
Removed the statement “If more than a page of data is sent to the device, previ-
ously latched data are discarded and the last page worth of data (either 256 or
512 bytes) are programmed in the page. This is the result of the device being
equipped with a page program buffer that is only page size in length.”
Embedded Algorithm Performance Tables:
Updated the t_W WRR Write Time typical value from 100 ms to 140 ms and the
maximum value from 200 ms to 500 ms
Updated t_PP Page Programming Time (256 bytes) maximum value from 550 µs
to 750 µs.
Added Note 3 and Note 4 to Table 10.7 to note shared performance values across
other commands
Updated the t_ESL Erase Suspend Latency maximum value from 40 µs to 45 µs.
Device ID and Common Flash Interface (ID-CFI) Address Map:
CFI Alternate Vendor-Specific Extended Query Parameter 9Ah - EHPLC DDR
table: corrected the data of offset 01h from 32h to 2Ah
Ordering Information:
Added E0, E1, F0, F1, G0, and G1 as valid model numbers
Broke out the 2 character length model number decoder into separate
characters to clarify format and save space
Corrected the valid S25FLxxxSAGMFI model numbers from R0 and R1 to G0 and
G1
Updated the Package Marking format to help identify speed differences across
similar devices
Added G0 and G1 as valid model number combinations for SDR SOIC OPNs
Removed 20, 21, 30, and 31 as valid model numbers combinations for DDR BGA
OPNs
*B
2012-03-22
DC Characteristics:
Updated ICC1 values, added note
AC Characteristics:
AC Characteristics (Single Die Package, VIO = VCC 2.7V to 3.6V) table: Moved tSU
value to tCSH, added note
AC Characteristics (Single Die Package, VIO 1.65V to 2.7V, VCC 2.7V to 3.6V) table:
Moved tSU value to tCSH, added note
AC Characteristics 66 MHz Operation table: added note
Command Set Summary:
S25FL128S and S25FL256S Command Set (sorted by function) table: added note
Device ID and Common Flash Interface (ID-CFI) Address Map:
Updated CFI Alternate Vendor-Specific Extended Query Parameter 0 table
Updated CFI Alternate Vendor-Specific Extended Query Parameter 84h Suspend
Commands table
Updated CFI Alternate Vendor-Specific Extended Query Parameter 8Ch Reset
Timing table
Ordering Information:
Valid Combinations table: added BHV to Package and Temperature for Models
C0, Do and C1, D1
Datasheet
160
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Revision history
Document
Date
Description of changes
revision
*C
2012-06-13
SDR AC Characteristics:
Updated tHO value from 0 Min to 2 ns Min
*D
*E
2012-07-12
2013-12-20
Global:
Promoted datasheet designation from Preliminary to Full Production
Global:
80 MHz DDR Read operation added
Performance Summary:
Updated Maximum Read Rates DDR (VIO = VCC = 3V to 3.6V) table. Current
Consumption table: added Quad DDR Read 80 MHz.
Migration Notes:
FL Generations Comparison table: updated DDR values for FL-S
SDR AC Characteristics:
Updated Clock Timing figure
DDR AC Characteristics:
Updated AC Characteristics — DDR Operation table
DDR Output Timing:
Updated SPI DDR Data Valid Window figure and Notes
Ordering Information:
Added 80 MHz to Speed option. Valid Combinations table: added DS Speed
Option.
*F
2014-03-17
2014-10-10
SDR AC Characteristics:
AC Characteristics (Single Die Package, VIO = VCC 2.7V to 3.6V) table: removed tV
min AC Characteristics (Single Die Package, VIO 1.65V to 2.7V, VCC 2.7V to 3.6V)
table: removed tV min
Ordering Information:
Fix typo: Add DDR for 80 MHz for the DS Speed option. Valid Combinations table:
Addition of more OPNs.
*G
Global:
Added Extended Temperature Range: -40°C to 125°C
SDR AC Characteristics:
AC Characteristics (Single Die Package, VIO = VCC 2.7V to 3.6V) table: corrected
tSU Min
Configuration Register 1 (CR1):
Latency Codes for DDR Enhanced High Performance table: added 80 MHz
DDR Fast Read (DDRFR 0Dh, 4DDRFR 0Eh):
Updated figures:
Continuous DDR Fast Read Subsequent Access (3-byte Address [ExtAdd=0,
EHPLC=11b])
Continuous DDR Fast Read Subsequent Access (4-byte Address [ExtAdd=1],
EHPLC=01b)
Datasheet
161
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Revision history
Document
Date
Description of changes
revision
*G (Cont)
2014-10-10
Initial Delivery State:
ASP Register Content table: removed ASPR Default Value row FE4Fh
Ordering Information FL128S and FL256S:
Added Extended Temperature Range: -40°C to 125°C
Updated Valid Combinations table
*H
2015-05-09
Global:
Updated description of DDR commands to reflect maximum operating clock
frequency of 80 MHz (from 66 MHz)
Command Set Summary:
S25FL128S and S25FL256S Command Set (sorted by function) table: changed
max DDR frequency from 66 MHz to 80 MHz for all applicable DDR commands
Software Interface Reference:
S25FL128S and S25FL256S Instruction Set (sorted by instruction) table: changed
max DDR frequency from 66 MHz to 80 MHz for all applicable DDR commands
Valid Combinations:
Corrected the Package Marking for DS Speed Option
*I
2015-08-24
2016-09-22
Replaced “Automotive Temperature Range” with “Industrial Plus Temperature
Range” in all instances across the document.
Updated Pinouts and signal descriptions:
Updated Versatile I/O Power Supply (VIO):
Updated description.
Updated to Cypress template.
*J
Added ECC related information in all instances across the document.
Added Automotive Temperature Range related information in all instances
across the document.
Added Logic block diagram.
Updated Electrical specifications:
Added Thermal resistance.
Updated Operating ranges:
Updated Table 7:
Updated minimum value of VCC (low) parameter.
Changed minimum value of tPD parameter from 1.0 µs to 15.0 µs.
Updated Timing specifications:
Updated SDR AC characteristics:
Updated Table 13:
Removed Note “For Industrial Plus (-40°C to +105°C) and Extended (-40°C to
+125°C) temperature range, all SCK clock frequencies are 5% slower than the
Max values shown.” and its references.
Updated Table 14:
Removed Note “For Industrial Plus (-40°C to +105°C) and Extended (-40°C to
+125°C) temperature range, all SCK clock frequencies are 5% slower than the
Max values shown.” and its references.
Updated DDR AC characteristics:
Updated Table 15:
Removed Note “For Industrial Plus (-40°C to +105°C) and Extended (-40°C to
+125°C) temperature range, all SCK clock frequencies are 5% slower than the
Max values shown.” and its references.
Changed minimum value of tHO parameter corresponding to 66 MHz from 0 ns
to 1.5 ns.
Datasheet
162
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Revision history
Document
Date
Description of changes
revision
*J (Cont)
2016-09-22
Updated Address space maps:
Updated Registers:
Added ECC Status Register (ECCSR).
Updated Commands:
Updated Command set summary:
Updated Extended addressing:
Updated Table 48:
Removed Note “For Industrial Plus (-40°C to +105°C) and Extended (-40°C to
+125°C) temperature range, all Maximum Frequency values are 5% slower than
the Max values shown.” and its references.
Updated Register access commands:
Updated Write Registers (WRR 01h):
Updated description.
Added ECC Status Register Read (ECCRD 18h).
Updated Program flash array commands:
Updated Program granularity:
Added Automatic ECC.
Added Data integrity.
Updated Device identification:
Added Device ID and common flash interface (ID-CFI) ASO map —
Automotive only.
Updated Ordering information:
Added Automotive Temperature Range related information in valid combina-
tions.
Updated Valid combinations — Standard:
Updated Table 86:
Updated entire table.
Added Valid combinations — Automotive grade / AEC-Q100.
Updated to new template.
*K
*L
2017-03-16
2017-04-27
Updated Table 8.
Added Table 9.
Updated Figure 129.
Updated Figure 130.
Updated Figure 131.
Updated Figure 132.
Updated tSU in Table 13.
Updated Quad Page Program (QPP 32h or 38h, or 4QPP 34h).
Updated Sales page.
Updated Cypress logo.
*M
*N
2017-05-23
2017-06-14
Added Model Number “21” in Table 87.
Updated Ordering information.
Added part number (S25FL128SDPMFB010) in Table 87.
*O
2018-03-15
Table 13 and Table 14: Removed the Max value of tCSH and updated the Max
value of tSU as “3000”.
Datasheet
163
001-98283 Rev. *S
2022-08-10
128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash
SPI Multi-I/O, 3.0V
Revision history
Document
Date
Description of changes
revision
*P
2018-08-07
Updated Acronyms: Replaced MSB with MSb and LSB with LSb.
Added DDR data valid timing using DLP.
Updated Ordering information: Added note 6.
Updated Table 84: Added Model # G0, G1, 40, 41, H0, H1, E0, E1, F0, F1.
Updated Table 25: Updated CR1[4] from RFU to DNU.
Updated the following figures:
Figure 9, Figure 35, Figure 36, Figure 39, Figure 40, Figure 131, Figure 43,
Figure 46 through Figure 50, Figure 54 through Figure 65, and Figure 93
through Figure 121.
*Q
*R
2019-04-30
2022-06-10
Updated Section 5.2 Thermal resistance on page 31.
Updated Copyright information.
Updated Chip Select (CS#).
Updated Ordering information.
Updated Thermal resistance.
Updated Table 8 and Table 9.
Updated table footnote 50.
Updated to Infineon template.
*S
2022-08-10
Corrected Ordering part number.
Updated Figure 132: Spec 002-15535 ** to *A.
Datasheet
164
001-98283 Rev. *S
2022-08-10
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