SD233N45S50MC [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 235A, 4500V V(RRM), Silicon,;
| 型号： | SD233N45S50MC |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 235A, 4500V V(RRM), Silicon, 软恢复二极管 快速软恢复二极管 高压大功率快速软恢复电源 高压大电源 高功率电源 |
| 文件： | 总7页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2094 rev. A 09/94
SD233N/R SERIES
FAST RECOVERY DIODES
Stud Version
Features
High power FAST recovery diode series
4.5 µs recovery time
235A
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 125°C
TypicalApplications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD233N/R
Units
235
60
A
°C
A
@ TC
IF(RMS)
IFSM
370
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5500
A
5760
A
I2t
151
KA2s
KA2s
V
138
VRRM range
3000 to 4500
4.5
t
µs
°C
°C
rr
@ TJ
125
case style
B-8
TJ
-40 to 125
1
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SD233N/R Series
Bulletin I2094 rev. A 09/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM max. repetitive
VRSM , maximum non-
IRRM max.
Type number
SD233N/R
peak and off-state voltage
V
repetitive peak voltage
V
TJ = 125°C
mA
30
36
40
45
3000
3600
4000
4500
3100
3700
4100
4600
50
Forward Conduction
Parameter
SD233N/R Units Conditions
IF(AV) Max. average forward current
@ Case temperature
235
60
A
180° conduction, half sine wave.
°C
IF(RMS) Max. RMS current
370
A
@ 45°C case temperature
IFSM
Max. peak, one-cycle
5500
5760
4630
4840
t = 10ms
t = 8.3ms reapplied
t = 10ms 50% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive forward current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
151
138
107
98
t = 10ms
t = 8.3ms reapplied
t = 10ms 50% VRRM
t = 8.3ms reapplied
No voltage
KA2s
I2√t
Maximum I2√t for fusing
1510
1.56
1.68
1.64
1.53
3.2
KA2√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level of threshold voltage
F(TO)2 High level of threshold voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
V
V
(I > π x IF(AV)), TJ = TJ max.
rf1
rf2
VFM
Low level of forward slope resistance
High level of forward slope resistance
Max. forward voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
(I > π x IF(AV)), TJ = TJ max.
V
I = 1000A, T = 125°C, t = 400 µs square pulse
pk p
J
Recovery Characteristics
Testconditions
Max.values @TJ=125°C
TJ=25oC
Code
typical t
rr
I
di/dt (*)
V
t
Q
I
rr
pk
r
rr
rr
@ 25% IRRM Square Pulse
@ 25% IRRM
(µs)
(A)
(A/µs)
(V)
(µs)
(µC)
(A)
S50
5.0
1000
100
- 50
4.5
680
240
(*) di/dt = 25A/us @ TJ = 25°C
2
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SD233N/R Series
Bulletin I2094 rev. A 09/94
Thermal and Mechanical Specification
Parameter
SD233N/R Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
°C
-40 to 150
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
0.1
0.04
50
DC operation
K/W
Mounting surface, smooth, flat and greased
Not lubricated threads
Nm
g
T
Mounting torque ± 10%
Approximate weight
Case style
wt
454
B-8
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.010
0.013
0.017
0.025
0.041
0.008
0.014
0.018
0.026
0.042
K/W
60°
30°
Ordering Information Table
Device Code
SD 23
3
N
45 S50
P
S
C
1
2
5
7
8
9
3
4
6
1
2
3
4
-
-
-
-
Diode
Essential part number
3 = Fast recovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
6
7
-
-
-
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
code (see Recovery Characteristics table)
t
rr
P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 X 1.5
8
-7 S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
T = Threaded Top Terminal 3/8" 24UNF-2A
None = Not isolated lead
9
-
C = Ceramic housing
3
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SD233N/R Series
Bulletin I2094 rev. A 09/94
Outlines Table
CERAMIC HOUSING
26 (1.023) MAX.
5(0.20) ± 0.3(0.01)
10.5 (0.41) DIA.
12 (0.47) MIN.
Case Style B-8
All dimensions in millimeters (inches)
2
C.S. 70mm
38 (1.5)
DIA. MAX.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
17 (0.67) DIA.
3/8"-24UNF-2A
CERAMIC HOUSING
38 (1.5)
Case Style B-8 with top thread terminal 3/8"
All dimensions in millimeters (inches)
DIA. MAX.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
4
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SD233N/R Series
Bulletin I2094 rev. A 09/94
130
120
110
100
90
130
120
110
100
90
SD233N/ R Se rie s
(DC ) = 0.1 K/ W
SD233N/ R Se rie s
R
R
(DC) = 0.1 K/ W
thJC
thJ C
C o nd u ctio n Pe riod
C o nd u ctio n Ang le
80
70
80
60
30°
70
60°
50
90°
120°
90°
60
40
60°
150
120°
DC
180°
300
30°
180°
250
50
30
0
50
100
200
0
100
200
400
Ave ra g e Forw a rd C urre n t (A)
Ave ra g e Fo rwa rd C urre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
600
500
400
300
200
100
0
900
800
700
600
500
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
400 RMS Lim it
C o nd uc tio n Pe rio d
300
200
100
0
C o nd uc tion Ang le
SD233N/R Se rie s
T = 125°C
SD233N/ R Se rie s
T = 125°C
J
J
0
50
100
150
200
250
0
50 100 150 200 250 300 350 400
Ave ra g e Fo rwa rd C urre nt (A)
Ave ra g e Forwa rd C urre nt (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
5500
5000
4500
4000
3500
3000
2500
2000
1500
6000
5000
4000
3000
2000
1000
At Any Ra te d Lo a d C o nd ition An d With
Ma xim um Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion .
50% Ra te d VRRM Ap p lie d Follo win g Surg e
Initia l T = 125°C
In itia l T = 125 °C
J
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volta g e Re a p p lie d
50% Ra te d VRRM Re a p p lie d
SD233N/R Se rie s
SD233N/ R Se rie s
1
10
100
0.01
0.1
1
Numb e r Of Eq ua l Amp litud e Ha lf C yc le C urrent Pulses (N)
Pulse Tra in Dura tio n (s)
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
5
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SD233N/R Series
Bulletin I2094 rev. A 09/94
10000
1
Ste a d y Sta te Va lue :
= 0.1 K/ W
R
thJC
(DC Op e ra tio n)
T = 25°C
J
0.1
T = 125°C
J
1000
0.01
0.001
SD233N/ R Se rie s
SD233N/ R Se rie s
100
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
In sta n ta n e o us Fo rwa rd Vo lta g e (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
500
450
V
400
FP
T = 125°C
J
I
350
300
250
200
150
100
50
T = 25°C
J
SD233N/ R Se rie s
0
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Ra te Of Rise Of Fo rwa rd C urre nt - d i/ d t (A/ us)
Fig. 9 - Typical Forward Recovery Characteristics
9
8
7
6
5
4
3
2
1400
600
500
400
300
200
100
0
I
= 1000 A
I
= 1000 A
FM
Sin e Pulse
FM
SD233N/ R Se rie s
Sine Pu lse
T = 125 °C ; V > 100V
1200
1000
800
600
400
200
0
J
r
500 A
500 A
150 A
I
= 1000 A
FM
Sin e Pulse
500 A
150 A
150 A
SD233N/ R Se rie s
T = 125 °C; V > 100V
SD233N/ R Se rie s
T = 125 °C; V > 100V
r
J
r
J
10
100
1000
0
50 100 150 200 250 300
0
50 100 150 200 250 300
Ra te O f Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Ra te Of Fa ll Of Forwa rd Curre nt - d i/d t (A/µs)
Ra te O f Fa ll Of Fo rwa rd Curre nt - d i/d t (A/µs)
Fig. 10 - Recovery Time Characteristics
Fig. 11 - Recovery Charge Characteristics
Fig. 12 - Recovery Current Characteristics
6
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SD233N/R Series
Bulletin I2094 rev. A 09/94
1E4
1E3
1E2
1E4
1E3
1E2
10 jo ule s p e r p ulse
6
4
2
1
400
600
200
50 Hz
100
1000
0.5
0.3
2000
4000
SD233N/ R Se rie s
Sin usoid a l Pulse
SD233N/ R Se ries
Sinu so id a l Pu lse
T = 125°C, V
= 15 00V
RRM
J
T = 55°C, VRRM = 15 00V
C
d v/ d t = 1000V/ µs
tp
t p
d v/ d t = 1 00 0V/ us
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id th (µs)
Pulse Ba se wid th (µs)
Fig. 14 - Frequency Characteristics
Fig. 13 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E4
1E3
1E2
SD23 3N/ R Se rie s
Tra p e zo id a l Pu lse
SD233N/R Se rie s
Tra p e zo id a l Pulse
T = 55°C , VRRM = 1500V
T = 125°C, VRRM= 1500V
C
J
d v/ d t = 100 0V/ us,
d i/ d t = 300A/ us
d v/d t = 1000V/µs
tp
tp
d i/ d t = 300A/ µs
10 jo ule s p e r p u lse
6
50 Hz
4
1E3
100
200
2
400
600
1
1000
1500
0.5
2000
0.3
1E2
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba sew id th (µs)
Pulse Ba se wid th (µs)
Fig. 16 - Frequency Characteristics
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E4
1E3
1E2
SD2 33 N/ R Se rie s
Tra p e zo id a l Pulse
SD233N/ R Se rie s
Tra p e zo id a l Pulse
T = 12 5°C , V
= 1500V
T = 55 °C, VRRM = 15 00V
RRM
J
C
d v/d t = 100 0V/ µs
d i/ d t = 100A/ µs
d v/ d t = 1000 V/ us
d i/ d t = 100A/ us
tp
tp
10 jo ule s p e r p ulse
6
4
50 Hz
1E3
1E2
2
100
200
400
1
600
1000
1500
0.5
2000
0.3
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id th (µs)
Pulse Ba se wid th (µs)
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 18 - Frequency Characteristics
7
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