SD233R40S50PC [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 235A, 4000V V(RRM), Silicon,;
| 型号： | SD233R40S50PC |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 235A, 4000V V(RRM), Silicon, |
| 文件： | 总8页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2094 rev. B 10/06
SD233N/R SERIES
FAST RECOVERY DIODES
Stud Version
Features
High power FAST recovery diode series
4.5 µs recovery time
235A
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 125°C
RoHS Compliant
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD233N/R
Units
235
60
A
°C
A
@ TC
IF(RMS)
IFSM
370
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5500
A
5760
A
I2t
151
KA2s
KA2s
V
138
VRRM range
3000 to 4500
4.5
t
µs
°C
°C
rr
@ TJ
125
case style
B-8
TJ
-40 to 125
1
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SD233N/R Series
Bulletin I2094 rev. B 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM max. repetitive
VRSM , maximum non-
IRRM max.
Typenumber
SD233N/R
peakandoff-statevoltage
repetitivepeakvoltage
TJ = 125°C
mA
V
V
30
36
40
45
3000
3100
3600
4000
4500
3700
4100
4600
50
ForwardConduction
Parameter
SD233N/R Units Conditions
IF(AV) Max. average forward current
@ Case temperature
235
60
A
180° conduction, half sine wave.
°C
IF(RMS) Max. RMS current
370
A
@ 45°C case temperature
IFSM Max. peak, one-cycle
non-repetitive forward current
5500
5760
4630
4840
t = 10ms
t = 8.3ms reapplied
t = 10ms 50% VRRM
t = 8.3ms reapplied
No voltage
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
151
138
107
98
t = 10ms
t = 8.3ms reapplied
t = 10ms 50% VRRM
t = 8.3ms reapplied
No voltage
KA2s
I2√t
Maximum I2√t for fusing
1510
1.56
1.68
1.64
1.53
3.2
KA2√s t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VF(TO)1 Low level of threshold voltage
VF(TO)2 High level of threshold voltage
V
(I > π x IF(AV)), TJ = TJ max.
rf1
Low level of forward slope resistance
High level of forward slope resistance
Max. forward voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
rf2
(I > π x IF(AV)), TJ = TJ max.
VFM
V
I = 1000A, T = 125°C, t = 400 µs square pulse
pk p
J
RecoveryCharacteristics
Testconditions
Max.values @TJ=125°C
TJ = 25oC
Code
typical t
I
di/dt (*)
V
r
t
Q
I
rr
pk
rr
rr
rr
@ 25% IRRM Square Pulse
@ 25% IRRM
(μs)
(A)
(A/μs)
(V)
(μs)
(μC)
(A)
S50
5.0
1000
100
- 50
4.5
680
240
(*) di/dt = 25A/us @ TJ = 25°C
2
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SD233N/R Series
Bulletin I2094 rev. B 10/06
ThermalandMechanicalSpecification
Parameter
SD233N/R
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
0.1
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
DC operation
K/W
0.04
Mounting surface, smooth, flat and greased
N m
g
T
Mounting torque ± 10%
Approximate weight
Case style
50
Not lubricated threads
See Outline Table
wt
454
B-8
ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conductionangle Sinusoidalconduction Rectangularconduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.010
0.013
0.017
0.025
0.041
0.008
0.014
0.018
0.026
0.042
K/W
60°
30°
OrderingInformationTable
Device Code
SD 23
3
N
45 S50
P
S
C
7
8
9
1
2
5
6
3
4
1
2
3
4
-
-
-
-
Diode
Essential part number
3 = Fastrecovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
6
7
-
-
-
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
t code (see Recovery Characteristics table)
rr
P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 X 1.5
8
-7 S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
T =ThreadedTopTerminal3/8"24UNF-2A
None = Not isolated lead
9
-
C = Ceramichousing
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3
SD233N/R Series
Bulletin I2094 rev. B 10/06
OutlinesTable
CERAMIC HOUSING
26 (1.023) MAX.
5(0.20) ± 0.3(0.01)
10.5 (0.41) DIA.
12 (0.47) MIN.
Case Style B-8
All dimensions in millimeters (inches)
2
C.S. 70mm
38 (1.5)
DIA. MAX.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
17 (0.67) DIA.
3/8"-24UNF-2A
CERAMIC HOUSING
38 (1.5)
Case Style B-8 with top thread terminal 3/8"
All dimensions in millimeters (inches)
DIA. MAX.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
4
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SD233N/R Series
Bulletin I2094 rev. B 10/06
130
120
110
100
90
130
120
110
100
90
SD 2 33N/ R Se r ie s
(DC) = 0.1 K/W
SD233N/ RSeries
R
R
thJC
(DC) = 0.1 K/W
thJC
Conduction Period
Conduction Angle
80
70
80
60
30°
70
60°
50
90°
120°
90°
60
40
60°
120°
DC
180°
300
30°
100
180°
250
50
30
0
50
150
200
0
100
200
400
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
600
500
400
300
200
100
0
900
800
700
600
500
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
RM S Lim it
30°
400 RM S Lim it
Conduction Period
SD233N/ RSeries
300
200
100
0
Conduction Angle
SD233N/ RSeries
T = 125°C
T = 125°C
J
J
0
50 100 150 200 250 300 350 400
Average Forward Current (A)
0
50
100
150
200
250
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
5500
5000
4500
4000
3500
3000
2500
2000
1500
6000
5000
4000
3000
2000
1000
At Any Rated Load Condition And With
50%Rated VRRM Applied Following Surge
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
Initial T = 125°C
J
Initial T = 125 °C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
No Voltage Reapplied
50%Rated VRRM Reapplied
SD233N/ RSeries
SD233N/ RSeries
1
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
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5
SD233N/R Series
Bulletin I2094 rev. B 10/06
1
0.1
10000
Steady State Value:
= 0.1 K/W
R
thJC
(DC Operation)
T = 25°C
J
T = 125°C
J
1000
0.01
SD233N/ RSeries
SD233N/ RSeries
0.001
100
0.001
0.01
0.1
1
10
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
Square Wave Pulse Duration (s)
InstantaneousForward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
500
Fig. 8 - Thermal Impedance ZthJC Characteristic
450
V
400
FP
T = 125°C
J
I
350
300
250
200
150
100
50
T = 25°C
J
SD233N/ RSeries
0
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Rate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 9 - Typical Forward Recovery Characteristics
1400
9
8
7
6
5
4
3
2
600
500
400
300
200
100
0
I
= 1000 A
I
= 1000 A
FM
FM
SD233N/ RSeries
Sin e Pu lse
Sin e Pu lse
T = 125 °C; V > 100V
1200
1000
800
600
400
200
0
J
r
500 A
150 A
500 A
I
= 1000 A
FM
Sine Pulse
500 A
150 A
150 A
SD233N/ RSeries
T = 125 °C; V > 100V
SD233N/ RSeries
T = 125 °C; V > 100V
J
r
J
r
10
100
1000
0
50 100 150 200 250 300
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/µs)
Ra t e O f Fa ll O f Fo rw a rd C urre n t - d i/ d t (A / µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 10 - Recovery Time Characteristics
Fig. 11 - Recovery Charge Characteristics
Fig. 12 - Recovery Current Characteristics
6
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SD233N/R Series
Bulletin I2094 rev. B 10/06
1E4
1E3
1E2
1E4
1E3
1E2
10 joules per p ulse
6
4
2
1
400
600
50 Hz
200
100
1000
2000
0.5
0.3
4000
SD 2 3 3 N / R Se r ie s
Sinusoidal Pulse
SD233N/ RSeries
Sinusoidal Pulse
T = 55°C, VRRM = 1500V
C
dv/ dt = 1000V/ us
T = 125°C, VRRM = 1500V
J
tp
dv/ dt = 1000V/ µs
tp
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Frequency Characteristics
Fig. 13 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E4
1E3
1E2
SD233N/RSeries
Trapezoidal Pulse
SD233N/RSeries
Trapezoidal Pulse
T = 125°C, V RRM= 1500V
J
dv/ dt = 1000V/ µs
di/ dt = 300A/ µs
T = 55°C, VRRM = 1500V
C
dv/dt = 1000V/ us,
di/dt = 300A/us
tp
tp
10 joulesper pulse
6
50 Hz
4
1E3
100
200
2
400
600
1
1000
1500
0.5
2000
0.3
1E2
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Ba sew id t h (µs)
Fig. 16 - Frequency Characteristics
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
1E2
1E4
SD233N/RSeries
Trapezoidal Pulse
T = 55°C, VRRM = 1500V
C
dv/ dt = 1000V/ us
di/dt = 100A/us
SD 2 33N / R Se ri e s
Trapezoidal Pulse
T = 125°C, VRRM = 1500V
J
dv/ dt = 1000V/ µs
di/dt = 100A/µs
tp
tp
10 joulesper pulse
6
4
50 Hz
1E3
1E2
2
100
200
400
1
600
1000
1500
0.5
2000
0.3
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba sew id th (µs)
Pulse Ba sew id th (µs)
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 18 - Frequency Characteristics
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7
SD233N/R Series
Bulletin I2094 rev. B 10/06
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/06
8
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