SD253N08S20MBV [INFINEON]
FAST RECOVERY DIODES Stud Version; 快恢复二极管梭哈版本
| 型号： | SD253N08S20MBV |
| 厂家： | 
Infineon |
| 描述： | FAST RECOVERY DIODES Stud Version |
| 文件： | 总7页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2065 rev. A 09/94
SD253N/R SERIES
FAST RECOVERY DIODES
Stud Version
Features
High power FAST recovery diode series
1.5 to 2.0 µs recovery time
250A
High voltage ratings up to 1600V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version JEDEC DO-205AB (DO-9)
Maximum junction temperature 125°C
TypicalApplications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD253N/R
Units
250
85
A
°C
A
@ TC
IF(RMS)
IFSM
392
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5350
A
5600
A
I2t
143
KA2s
KA2s
V
130
VRRM range
400 to 1600
1.5 to 2.0
25
t
range
µs
°C
°C
rr
case style
DO-205AB (DO-9)
@ TJ
TJ
- 40 to 125
1
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SD253N/R Series
Bulletin I2065 rev. A 09/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM max. repetitive
VRSM , maximum non-
IRRM max.
TJ = 125°C
mA
Type number
SD253N/R..S15
peak and off-state voltage
repetitive peak voltage
V
V
04
08
10
12
14
16
400
500
800
1000
1200
1400
1600
900
1100
1300
1500
1700
35
SD253N/R..S20
Forward Conduction
Parameter
SD253N/R Units Conditions
IF(AV) Max. average forward current
@ Case temperature
250
85
A
180° conduction, half sine wave.
°C
IF(RMS) Max. RMS current
392
5350
5600
4500
4710
143
A
DC @ 74°C case temperature
IFSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive forward current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
130
KA2s
101
92
I2√t
Maximum I2√t for fusing
1430
0.87
1.17
0.62
0.29
1.38
KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level of threshold voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
V
V
F(TO)2 High level of threshold voltage
(I > π x IF(AV)), TJ = TJ max.
rf1
rf2
VFM
Low level of forward slope resistance
High level of forward slope resistance
Max. forward voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
(I > π x IF(AV)), TJ = TJ max.
V
I = 785A, T = 25°C, t = 400 µs square pulse
pk p
J
Recovery Characteristics
Testconditions
Max.values @TJ=125°C
TJ=25oC
Code
typical t
I
di/dt
V
t
Q
I
rr
rr
pk
r
rr
rr
@ 25% IRRM Square Pulse
@ 25% IRRM
(µs)
(A)
(A/µs)
(V)
(µs)
(µC)
(A)
44
S15
S20
1.5
2.9
3.2
90
750
25
- 30
2.0
107
46
2
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SD253N/R Series
Bulletin I2065 rev. A 09/94
Thermal and Mechanical Specification
Parameter
SD253N/R
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
0.115
0.08
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
DC operation
K/W
Mounting surface, smooth, flat and greased
T
Mounting torque ± 10%
31
Not lubricated threads
Lubricated threads
Nm
g
24.5
wt
Approximate weight
Case style
250
DO-205AB (DO-9)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.010
0.013
0.017
0.025
0.044
0.008
0.014
0.019
0.027
0.044
K/W
60°
30°
Ordering Information Table
Device Code
SD 25
3
R
16 S20
P
B
V
1
5
7
8
9
2
3
4
6
1
2
3
4
-
-
-
-
Diode
Essential part number
3 = Fast recovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
6
7
-
-
-
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
code (see Recovery Characteristics table)
t
rr
P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A
M = Stud base DO-205AB (DO-9) M16 X 1.5
8
-7 B = Flag top terminals (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
9
-
V = Glass-metal seal
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3
SD253N/R Series
Bulletin I2065 rev. A 09/94
Outline Table
GLASS-METAL SEAL
19 (0.75)
MAX.
4 (0.16) MAX.
2
DIA. 8.5 (0.33) NOM.
C.S. 35mm
(0.054 s.i.)
DIA. 28.5 (1.08) MAX.
SW 32
Conform to JEDEC DO-205AB (DO-9)
All dimensions in millimeters (inches)
3/4-16UNF-2A*
* FOR METRIC DEVICE: M16 X 1.5
GLASS-METAL SEAL
21 (0.83)
14 (0.55)
DIA. 6.5 (0.26)
DIA. 28.5 (1.12) MAX.
DO-205AB (DO-9) Flag
3/4"-16UNF-2A*
All dimensions in millimeters (inches)
*FOR METRIC DEVICE: M16 X 1.5
4
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SD253N/R Series
Bulletin I2065 rev. A 09/94
130
120
110
100
90
130
120
110
100
90
SD253N/ R Se rie s
SD253N/ R Se rie s
R
(DC) = 0.115 K/ W
R
(DC ) = 0.115 K/ W
thJC
thJC
Co nd uc tio n Ang le
C o nd u c tio n Pe rio d
30°
60°
30°
180°
90°
60°
80
90°
120°
120°
180°
DC
80
70
0
50
100
150
200 250
300
0
100
200
300
400
Ave ra g e Fo rwa rd C urre n t (A)
Ave ra g e Fo rwa rd Curre n t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
300
250
200
150
100
50
500
450
400
350
300
250
200
150
100
50
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Limit
RMS Lim it
Co n d u ctio n Pe riod
C o nd u ctio n Ang le
SD253N/ R Se rie s
SD253N/ R Se rie s
T
= 125°C
J
T
= 125°C
J
0
0
0
50
100
150
200
250
0
100
200
300
400
Ave ra g e Fo rwa rd Curre n t (A)
Ave ra g e Fo rwa rd C urre n t (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
6000
5000
4000
3000
2000
1000
At Any Ra te d Lo a d Co nd itio n And With
Ma xim um Non Re p e titive Surg e C urre nt
Ve rsus Pulse Tra in Dura tion .
Ra te d V
Ap p lie d Fo llo win g Surg e .
RRM
In itia l T = 125°C
In itia l T = 125°C
J
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volt a g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
SD253N/ R Se rie s
SD253N/ R Se rie s
1
10
100
0.01
0.1
Pulse Tra in Dura tion (s)
1
Numb e r O f Eq ua l Amp litud e Ha lf Cyc le C urre nt Pulse s (N)
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
5
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SD253N/R Series
Bulletin I2065 rev. A 09/94
1
10000
1000
100
Ste a d y Sta te Va lue :
= 0.1 15K/ W
R
thJC
(DC Op e ra tio n)
0.1
T = 25 °C
J
T = 125 °C
J
0.01
0.001
SD253N/ R Se rie s
10
1
SD253N/ R Se rie s
0.001
0.01
0.1
1
10
0
1
2
3
4
Sq ua re Wa ve Pulse Dura tion (s)
Insta n ta n e o us Forwa rd Volta g e (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
3.6
3.2
2.8
2.4
2
170
130
I
= 750 A
FM
I
= 750 A
SD253N/ R..S15 Se rie s
FM
160
120
110
100
90
T = 125 °C , V = 30V
Sq ua re Pulse
Sq ua re Pulse
J
r
150
140
130
120
110
100
90
I
= 750 A
FM
400 A
200 A
400 A
200 A
Sq u a re Pulse
80
70
60
50
400 A
200 A
80
40
SD253N/ R..S15 Se rie s
T = 125 °C , V = 30V
70
30
SD253N/ R..S15 Se rie s
T = 125 °C, V = 30V
J
r
60
20
r
J
50
10
1.6
10
100
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs) Ra te Of Fa ll Of Fo rwa rd Current - d i/d t (A/µs) Ra te O f Fa ll Of Fo rwa rd Curre nt - d i/d t (A/µs)
Fig. 9 - Recovery Time Characteristics
Fig. 10 - Recovery Charge Characteristics
Fig. 11 - Recovery Current Characteristics
3.6
300
130
SD253N/ R..S20 Se rie s
I
= 750 A
FM
Sq ua re Pulse
I
= 750 A
120
110
100
90
FM
T = 125 °C, V = 30V
J
r
Sq ua re Pulse
3.4
3.2
3
250
200
150
100
50
400 A
I
= 750 A
FM
Sq u a re Pu lse
400 A
200 A
80
200 A
400 A
200 A
70
60
2.8
2.6
2.4
50
SD253N/ R..S20 Se rie s
T = 125 °C , V = 30V
SD253N/R..S20 Se rie s
T = 125 °C , V = 30V
40
J
r
J
r
30
20
10
100
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forwa rd Curre nt - d i/d t (A/µs) Ra te Of Fa ll Of Fo rwa rd Current - d i/d t (A/µs)
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/d t (A/µs)
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
6
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SD253N/R Series
Bulletin I2065 rev. A 09/94
1E4
1E3
1E2
1E1
20 jo ule s p e r p ulse
20 jo ule s p er p ulse
10
10
4
4
2
2
1
1
0.4
0.4
0.2
0.2
0.1
0.04
0.1
0.02
0.01
SD253N/R..S15 Se ries
Tra p e zo id a l Pulse
T = 125°C , VRRM = 800V
SD253N/R..S15 Se rie s
Sinuso id a l Pu lse
T = 125°C , VRRM = 800V
J
J
tp
tp
d v/ d t = 1000V/µs; d i/ d t=50A/ µs
d v/ d t = 1000V/µs
1E4 1E1
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
1E2
1E1
20 jo ules p e r p ulse
10
20 jo ule s p e r p ulse
10
4
4
2
2
1
0.4
1
0.4
0.2
0.2
0.1
0.04
0.02
SD253N/R.. S20 Se rie s
Tra p e zo id a l Pu lse
SD253N/R..S20 Se ries
Sinu so id a l Pu lse
T = 125°C , VRRM = 1120V
T = 125°C, VRRM = 1120V
J
J
0.01
tp
tp
d v/ d t = 1000V/ µs; d i/d t=50A/ µs
d v/d t = 1000 V/µs
1E1
1E2
1E3
1E4
1
E1
1E2
1E3
1E4
Pulse Ba se w id th (µs)
Pulse Ba se wid th (µs)
Fig. 16 - Maximum Total Energy Loss Per Pulse Characteristics
7
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