SD500N [INFINEON]
STANDARD RECOVERY DIODES Stud Version; 标准恢复二极管梭哈版本
| 型号： | SD500N |
| 厂家： | 
Infineon |
| 描述： | STANDARD RECOVERY DIODES Stud Version |
| 文件： | 总6页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Bulletin I2095/A
SD500N/R SERIES
Stud Version
STANDARD RECOVERY DIODES
Features
475A
Wide current range
High voltage ratings up to 4500V
High surge current capabilities
Stud cathode and stud anode version
Standard JEDEC types
TypicalApplications
Converters
Power supplies
High power drives
Auxiliary system supplies for traction applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD500N/R
Units
475
55
A
°C
A
@ TC
IF(RMS)
IFSM
745
@50Hz
@ 60Hz
@50Hz
@ 60Hz
7500
A
7850
A
I2t
281
KA2s
KA2s
V
257
VRRM range
TJ
3000 to 4500
- 40 to 150
case style
B-8
°C
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SD500N/R Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
VRSM , maximum non-
IRRM max.
Type number
SD500N/R
peak reverse voltage
V
repetitive peak rev. voltage
V
@ TJ = TJ max.
mA
30
36
40
45
3000
3600
4000
4500
3100
3700
4100
4600
50
Forward Conduction
Parameter
SD500N/R
Units Conditions
IF(AV) Max. average forward current
@ Case temperature
475
55
A
°C
A
180° conduction, half sine wave
180° conduction, half sine wave
DC @ 40°C case temperature
IF(AV) Max. average forward current
@ Case temperature
300
100
745
°C
A
IF(RMS) Max. RMS forward current
IFSM
Max. peak, one-cycle forward,
non-repetitive surge current
7500
7850
6310
6600
281
t = 10ms
t = 8.3ms reapplied
t = 10ms 50% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 50% VRRM
t = 8.3ms reapplied
No voltage
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
257
KA2s
199
182
I2√t
Maximum I2√t for fusing
2810
KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
0.88
0.97
0.78
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
voltage
V
VF(TO)2 High level value of threshold
voltage
(I > π x IF(AV)),TJ = TJ max.
r
Low level value of forward
slope resistance
1
f
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
f
0.72
1.66
(I > π x IF(AV)),TJ = TJ max.
VFM
Max. forward voltage drop
V
I = 1000A, TJ = TJ max, t = 10ms sinusoidal wave
pk p
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SD500N/R Series
Thermal and Mechanical Specifications
Parameter
SD500N/R
Units Conditions
TJ
T
Max. junction operating temperature range
Max. storage temperature range
-40 to 150
-55 to 200
°C
stg
RthJC Max. thermal resistance, junction to case
0.1
DC operation
K/W
RthCS Max. thermal resistance, case
to heatsink
Mounting surface, smooth, flat and
greased
0.04
T
Max. allowed mounting torque ±10%
Approximate weight
50
Nm
g
Not lubricated threads
wt
454
Case style
B - 8
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.012
0.014
0.017
0.025
0.042
0.008
0.014
0.019
0.026
0.042
K/W
60°
30°
Ordering Information Table
Device Code
SD 50
0
N
45
P
S
C
1
2
3
4
5
6
8
7
1
2
3
4
-
-
-
-
Diode
Essential part number
0 = Standard recovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
6
-
-
Voltage code: Code x 100 = VRRM (See Voltage Ratings table)
P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 X 1.5
7
-
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
T = Threaded Top Terminal 3/8" 24UNF-2A
None = Non isolated lead
8
-
C = Ceramic Housing
NOTE: Available for rotating applications (Contact factory)
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SD500N/R Series
Outlines Table
CERAMIC HOUSING
12 (0.47) MIN.
26 (1.023) MAX.
5(0.20) ± 0.3(0.01)
10.5 (0.41) DIA.
Case Style B-8
All dimensions in millimeters (inches)
2
C.S. 70mm
38 (1.5)
DIA. MAX.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.
CERAMIC HOUSING
17 (0.67) DIA.
3/8"-24UNF-2A
38 (1.5)
DIA. MAX.
Case Style B-8 with top thread terminal 3/8"
All dimensions in millimeters (inches)
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83)
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SD500N/R Series
150
150
140
130
120
110
100
90
SD500N/RSeries
SD500N/RSeries
(DC) = 0.1 K/W
140
130
120
110
100
90
R
(DC) = 0.1 K/W
R
thJC
thJC
Conduction Period
Conduction Angle
80
70
80
30°
60°
30°
60
90°
70
60°
120°
180°
50
90°
60
120°
40
180°
DC
50
30
0
100
200
300
400
500
0
100 200 300 400 500 600 700 800
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
900
800
180°
120°
90°
60°
30°
700
600
500
400
300
200
100
0
RMS Lim it
0
.
2
K
/
W
W
Conduction Angle
SD500N/ RSeries
0
.
4
K
/
T = 150°C
J
0
100
200
300
400
500
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
1100
1000
900
800
700
600
500
400
300
200
100
0
DC
180°
120°
90°
60°
30°
R
=
0
.
0
1
K
/
0
W
.
0
4
-
K
D
/
W
e
l
t
a
R
RMS Lim it
Conduction Period
SD500N/ RSeries
1
T = 150°C
.8
K
/W
J
0
100 200 300 400 500 600 700 800
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
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SD500N/R Series
8000
9000
8000
7000
6000
5000
4000
3000
At Any Rated Load Condition And With
50%Rated V Applied Following Surge
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
RRM
Initial T = 150 °C
J
Initial T = 150°C
7000
6000
5000
4000
3000
2000
J
@60 Hz0.0083 s
@50 Hz0.0100 s
No Voltage Reapplied
50%Rated V
Reapplied
RRM
SD500N/ R Se rie s
2000 SD500N/ RSeries
1000
0.01
1
10
100
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
10000
T = 25°C
J
T = 150°C
J
1000
SD500N/ RSeries
100
0.5
1
1.5
2
2.5
3
3.5
4
InstantaneousForward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
0.1
Steady State Value:
= 0.1 K/W
R
thJC
(DC Operation)
0.01
0.001
SD500N/RSeries
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
To Order
Fig. 8 - Thermal Impedance ZthJC Characteristics
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