SD603C08S10CPBF [INFINEON]
暂无描述;型号: | SD603C08S10CPBF |
厂家: | Infineon |
描述: | 暂无描述 二极管 快恢复二极管 快速恢复二极管 |
文件: | 总8页 (文件大小:203K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I2068 rev. C 04/00
SD603C..C SERIES
Hockey Puk Version
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
600A
High voltage ratings up to 2200V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC B-43
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
case style B-43
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD603C..C
Units
600
55
A
°C
A
@ T
hs
hs
IF(RMS)
942
@ T
25
°C
A
IFSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
8320
8715
A
I2t
346
KA2s
KA2s
V
316
VRRM range
400 to 2200
1.0 to 2.0
25
t
range
µs
°C
°C
rr
@ TJ
TJ
- 40 to 125
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1
SD603C..C Series
Bulletin I2068 rev. C 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VRRM max. repetitive
VRSM , maximum non-
IRRM max.
TJ = 125°C
mA
Type number
SD603C..S10C
Code peak and off-state voltage
repetitive peak voltage
V
V
04
08
10
12
14
400
500
800
900
1100
1300
1500
1000
1200
1400
45
SD603C..S15C
SD603C..S20C
16
20
22
1600
2000
2200
1700
2100
2300
Forward Conduction
Parameter
SD603C..C Units Conditions
IF(AV) Max. average forward current
@ Heatsink temperature
600(300)
55(75)
942
A
°C
A
180° conduction, half sine wave.
Double side (single side) cooled
IF(RMS) Max. RMS current
@ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
IFSM
Max. peak, one-cycle
8320
8715
7000
7330
346
non-repetitive forward current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
316
KA2s
245
224
3460
1.36
1.81
0.87
0.67
2.97
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VF(TO)1 Low level of threshold voltage
V
V
F(TO)2 High level of threshold voltage
(I > π x IF(AV)), TJ = TJ max.
rf1
rf2
VFM
Low level of forward slope resistance
High level of forward slope resistance
Max. forward voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
(I > π x IF(AV)), TJ = TJ max.
V
I = 1885A, TJ = 25°C, t = 10ms sinusoidal wave
pk p
Recovery Characteristics
Testconditions
Max.values @TJ=125°C
TJ=25oC
Code
typical t
I
di/dt
V
t
Q
I
rr
rr
pk
r
rr
rr
@ 25% IRRM Square Pulse
@ 25% IRRM
(µs)
1.0
1.5
2.0
(A)
(A/µs)
(V)
(µs)
(µC)
45
(A)
34
51
55
S10
S15
S20
2.0
3.2
3.5
1000
25
-30
87
97
2
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SD603C..C Series
Bulletin I2068 rev. C 04/00
Thermal and Mechanical Specifications
Parameter
SD603C..C
Units Conditions
TJ
T
Max. operating temperaturerange
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.076
0.038
DC operationsinglesidecooled
DC operationdouble side cooled
K/W
F
Mounting force, 10%
9800
(1000)
83
N
(Kg)
g
wt
Approximate weight
Case style
B-43
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units Conditions
Single Side Double Side Single Side Double Side
180°
120°
90°
0.006
0.008
0.010
0.015
0.026
0.007
0.008
0.010
0.015
0.025
0.005
0.008
0.011
0.016
0.026
0.005
0.008
0.011
0.015
0.025
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
SD 60
3
C
22 S20
C
1
2
5
7
3
4
6
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode
Essential part number
3 = Fast recovery
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
code (see Recovery Characteristics table)
t
rr
C = Puk Case B-43
3
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SD603C..C Series
Bulletin I2068 rev. C 04/00
Outline Table
3.5 (0.14) DIA. NOM. x
1.8 (0.07) DEEP MIN. BOTH ENDS
0.8(0.03) MIN.
BOTH ENDS
25.3 (1) DIA. MAX.
TWO PLACES
Conform to JEDEC B-43
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
40.5 (1.59) DIA. MAX.
1 3 0
1 2 0
1 1 0
1 0 0
90
130
120
110
100
90
SD 6 03C ..C S e rie s
(Sin g le S id e C o oled )
(D C ) 0.076 K /W
SD 603C..C Series
(Single Side Cooled)
R
=
R
(DC) = 0.076 K/W
th J-hs
thJ-h s
Con duction Angle
C ond uction Period
30°
80
60°
200
90°
120°
80
6 0°
70
18 0°
9 0°
3 0°
180°
120 °
D C
400
70
60
0
5 0
1 00
1 50
2 0 0
25 0 3 00
3 50
0
100
300
500
A ver a g e F orw a rd C u rre n t (A )
Average Forw ard Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
4
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SD603C..C Series
Bulletin I2068 rev. C 04/00
130
120
110
100
90
13 0
12 0
11 0
10 0
9 0
SD603C..C Series
(Double Side Cooled)
SD 6 03C ..C S er ie s
(D ou b le Sid e C ooled )
R
(DC) = 0.038 K/W
R
(D C ) = 0 .03 8 K /W
th J- hs
th J-hs
Cond uction Period
C ond uction Angle
8 0
80
30°
7 0
60°
90°
70
120°
30°
6 0
60°
90°
180 °
120°
60
5 0
180°
D C
50
4 0
0
0
1
100 200 300 400 500 600 700
Average Forward Current (A)
0
2 0 0
40 0
60 0
8 00
1 0 00
A ve ra g e Fo rw a rd C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1800
1600
1400
1200
1000
800
2500
2000
1500
1000
500
D C
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
RMS Limit
600
C ondu ction P eriod
SD603C..C Series
Con duction An gle
SD603C..C Series
400
T
= 125°C
J
200
T
= 125°C
J
0
0
100
200
300
400
500
600
0
200
400
600
800
1000
Average Forw ard C urrent (A)
Average Forw ard Current (A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
8 0 00
7 5 00
7 0 00
6 5 00
6 0 00
5 5 00
5 0 00
4 5 00
4 0 00
3 5 00
3 0 00
2 5 00
9000
8000
7000
6000
5000
4000
3000
2000
M a x im u m N on Re p etitive S u rg e C u rre n t
V e rsu s P u lse Tra in D u ra tion .
A t A n y R a te d Lo a d C o n d ition a n d W ith
R a te d
V
Ap p lie d F ollo w in g S u rg e.
RRM
In itia l T
=
1 25 °C
N o V olta g e R ea p p lie d
R a te d R e a p p lied
In itia l T
= 12 5° C
J
J
@
@
6 0 H z 0.00 83
5 0 H z 0.01 00
s
s
V
RR M
S D 603 C ..C S erie s
SD 60 3C ..C S eries
0.01
0.1
1
1 0
1 0 0
Pu lse T ra in D u ra tion (s)
Num ber of Eq ual Am plitude Ha lf C ycle Cu rrent Pu lses (N)
Fig. 7 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 8 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
5
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SD603C..C Series
Bulletin I2068 rev. C 04/00
0 .1
10000
S D 603 C ..C Se rie s
1000
0.0 1
T
T
=
=
25 °C
J
J
Ste a d y Sta te V a lu e
0.076 K /W
(Sin g le S id e C o oled )
0.038 K /W
:
125 °C
R
=
th J- hs
100
10
R
=
th J-hs
SD 603C ..C S erie s
(D o ub le Sid e C o oled )
(D C O p era tion )
0 .0 01
.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
0 .00 1
0 .01
0 .1
1
10
10 0
In stan ta n eou s Forw ard V o lta ge (V )
Sq u a re W a ve P u lse D ura tion (s)
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
1 00
V
F P
I
T
=
12 5°C
80
J
60
40
20
T
= 25°C
J
SD 603C ..S20 C Se ries
0
0
2 00
4 00
60 0
8 0 0
1 00 0
120 0
1 40 0
16 0 0
18 00
200 0
R a te O ff R ise O f Fo rw ar d C urre n t d i/d t (A/ usec )
Fig. 11 - Typical Forward Recovery Characteristics
2.2
2.1
2
130
120
110
100
90
I
= 1000 A
SD603C..S10C Series
= 125 °C; V = 30V
FM
Squ are Pulse
I
= 1000 A
FM
120
110
100
T
r
J
Squa re P ulse
I
= 1000 A
FM
Squa re Pu lse
500 A
250 A
500 A
90
80
70
60
50
40
30
20
80
70
250 A
1.9
1.8
1.7
1.6
500 A
60
50
40
250 A
30
SD 603C..S10C Series
T
S D 603C ..S10C S eries
= 125 °C; V = 30V
20
J
r
T
=
125 ° C ;
V
= 30V
r
J
10
10
100
10 20 30 40 50 6 0 7 0 8 0 9 0 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forwa rd Cu rren t - di/dt (A/µs)
Rate Of Fall Of Forw ard C urrent - di/d t (A/µs)
R ate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
6
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SD603C..C Series
Bulletin I2068 rev. C 04/00
4
3.5
3
200
180
160
140
120
100
80
1 40
1 30
1 20
I
= 1000 A
FM
SD603C..S15C Series
= 125 °C; V = 30V
I
= 1000 A
FM
Squ are Pu lse
T
J
r
Squa re Pulse
1 10
1 00
90
I
= 1000 A
FM
500 A
250 A
Sq uare Pu lse
500 A
250 A
80
70
60
50
40
30
20
500 A
250 A
2.5
2
SD 603C ..S 15C Series
SD 60 3C ..S 15C Se rie s
60
T
=
125 °C ; V
= 30V
J
r
T
=
12 5 ° C ; V
= 30V
r
J
40
10
100
10 20 30 40 5 0 60 70 80 90 100
1 0 20 3 0 40 50 60 7 0 80 90 100
Ra te O f Fa ll Of Forw a rd Cu rrent - di/d t (A/µs)
Rate Of Fa ll Of Forw ard Current - d i/dt (A/µs)
R ate Of Fall Of Forw ard C urrent - di/dt (A/µs)
Fig. 15 - Recovery Time Characteristics
Fig. 16 - Recovery Charge Characteristics
Fig. 17 - Recovery Current Characteristics
4.5
200
150
S D 603C ..S 20C Serie s
140
130
120
110
100
90
I
= 1000 A
FM
I
= 1000 A
FM
180
160
140
120
100
80
T
=
125 °C ; V
= 30V
J
r
Sq uare Pulse
Squ are Pulse
4
3.5
3
I
= 1000 A
500 A
250 A
FM
500 A
Squa re Pulse
80
70
250 A
60
500 A
250 A
50
2.5
2
SD603C..S20C Series
= 125 °C; V = 30V
40
S D 603C ..S2 0C Se rie s
60
T
r
J
T
=
125 °C ; V
=
30V
30
J
r
40
20
10
100
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate O f Fall Of Forwa rd C urrent - di/d t (A/µs)
Ra te Of Fa ll Of Forw ard C urrent - di/dt (A/µs)
R ate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
1 E4
20 joules per pulse
10
20 joules per p ulse
4
10
4
2
1
2
1
0.4
1 E3
0.4
0.2
0.2
0.1
0.04
0.02
0.1
0.01
1 E2
SD603C..S10C Series
Trap ezoida l Pulse
SD603C..S10 C Series
Sin usoid al Pulse
TJ = 125°C , VRRM = 1120V
d v/dt = 1000V/µ s; di/dt=5 0A/µs
TJ = 125°C, VRRM
= 11 20V
d v/d t = 1000V/µ s
tp
tp
1 E1
1 E1
1E1
1E4 1
1 E2
1 E3
1 E4
1E 2
1E3
P ulse Ba se w id th (µs)
Pu lse Ba sew id th (µ s)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
7
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SD603C..C Series
Bulletin I2068 rev. C 04/00
1E 4
20 joules p er pulse
20 joules per pulse
10
10
4
2
4
1
2
1E 3
0.4
0.2
1
0.4
0.1
0.04
0.2
0.02
1E 2
1E 1
SD603C ..S15C Series
Tra pezoid al Pu lse
TJ = 125°C , VRRM
SD603C..S15C Series
Sinu soidal Pu lse
T J = 125°C, VRRM = 1760V
dv/dt = 1000V/µs
=
1760V
tp
d v/dt = 1 000V /µ s; di/dt=50A/µs
tp
1E4 11E1
1
1 E2
1 E3
1 E4
1E1
1 E2
1 E3
P u lse B ase w id th (µ s)
P u lse B a sew id th (µ s)
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
1E 4
1E 3
1E 2
1E 1
20 joules per p ulse
10
20 joules per pulse
10
4
2
4
2
1
1
0.4
0.4
0.2
0.1
0.04
SD603C ..S20C Series
Trap ezoidal Pu lse
SD603 C..S20C Series
Sin u soid al Pu lse
TJ = 125°C , VRRM = 1760 V
dv/dt = 1000V/µs
TJ = 125°C , VRRM = 1760V
dv /dt 1000V/µ s; di/dt= 50A/µs
tp
=
tp
1E 4
1E 1
4
1 E1
1E2
1E3
1E2
1E3
1E4
P ulse Ba sew id th (µ s)
P u lse B a se w id th (µ s)
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
8
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相关型号:
SD603C10S10CPBF
Rectifier Diode, 1 Phase, 1 Element, 600A, 1000V V(RRM), Silicon, B-43, 2 PIN
INFINEON
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