SD603C10S10C [INFINEON]

FAST RECOVERY DIODES Hockey Puk Version; 快恢复二极管曲棍球北辰版本
SD603C10S10C
型号: SD603C10S10C
厂家: Infineon    Infineon
描述:

FAST RECOVERY DIODES Hockey Puk Version
快恢复二极管曲棍球北辰版本

整流二极管 快恢复二极管 高压 高压大功率快速软恢复电源 高压大电源 高功率电源 软恢复二极管 快速软恢复二极管 快速恢复二极管
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Bulletin I2068 rev. C 04/00  
SD603C..C SERIES  
Hockey Puk Version  
FAST RECOVERY DIODES  
Features  
High power FAST recovery diode series  
1.0 to 2.0 µs recovery time  
600A  
High voltage ratings up to 2200V  
High current capability  
Optimized turn on and turn off characteristics  
Low forward recovery  
Fast and soft reverse recovery  
Press-puk encapsulation  
Case style conform to JEDEC B-43  
Maximum junction temperature 125°C  
Typical Applications  
Snubber diode for GTO  
case style B-43  
High voltage free-wheeling diode  
Fast recovery rectifier applications  
Major Ratings and Characteristics  
Parameters  
IF(AV)  
SD603C..C  
Units  
600  
55  
A
°C  
A
@ T  
hs  
hs  
IF(RMS)  
942  
@ T  
25  
°C  
A
IFSM  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
8320  
8715  
A
I2t  
346  
KA2s  
KA2s  
V
316  
VRRM range  
400 to 2200  
1.0 to 2.0  
25  
t
range  
µs  
°C  
°C  
rr  
@ TJ  
TJ  
- 40 to 125  
www.irf.com  
1
SD603C..C Series  
Bulletin I2068 rev. C 04/00  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
VRRM max. repetitive  
VRSM , maximum non-  
IRRM max.  
TJ = 125°C  
mA  
Type number  
SD603C..S10C  
Code peak and off-state voltage  
repetitive peak voltage  
V
V
04  
08  
10  
12  
14  
400  
500  
800  
900  
1100  
1300  
1500  
1000  
1200  
1400  
45  
SD603C..S15C  
SD603C..S20C  
16  
20  
22  
1600  
2000  
2200  
1700  
2100  
2300  
Forward Conduction  
Parameter  
SD603C..C Units Conditions  
IF(AV) Max. average forward current  
@ Heatsink temperature  
600(300)  
55(75)  
942  
A
°C  
A
180° conduction, half sine wave.  
Double side (single side) cooled  
IF(RMS) Max. RMS current  
@ 25°C heatsink temperature double side cooled  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
IFSM  
Max. peak, one-cycle  
8320  
8715  
7000  
7330  
346  
non-repetitive forward current  
A
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
316  
KA2s  
245  
224  
3460  
1.36  
1.81  
0.87  
0.67  
2.97  
I2t  
Maximum I2t for fusing  
KA2s t = 0.1 to 10ms, no voltage reapplied  
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
VF(TO)1 Low level of threshold voltage  
V
V
F(TO)2 High level of threshold voltage  
(I > π x IF(AV)), TJ = TJ max.  
rf1  
rf2  
VFM  
Low level of forward slope resistance  
High level of forward slope resistance  
Max. forward voltage  
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
mΩ  
(I > π x IF(AV)), TJ = TJ max.  
V
I = 1885A, TJ = 25°C, t = 10ms sinusoidal wave  
pk p  
Recovery Characteristics  
Testconditions  
Max.values @TJ=125°C  
TJ=25oC  
Code  
typical t  
I
di/dt  
V
t
Q
I
rr  
rr  
pk  
r
rr  
rr  
@ 25% IRRM Square Pulse  
@ 25% IRRM  
(µs)  
1.0  
1.5  
2.0  
(A)  
(A/µs)  
(V)  
(µs)  
(µC)  
45  
(A)  
34  
51  
55  
S10  
S15  
S20  
2.0  
3.2  
3.5  
1000  
25  
-30  
87  
97  
2
www.irf.com  
SD603C..C Series  
Bulletin I2068 rev. C 04/00  
Thermal and Mechanical Specifications  
Parameter  
SD603C..C  
Units Conditions  
TJ  
T
Max. operating temperaturerange  
Max. storage temperature range  
-40 to 125  
-40 to 150  
°C  
stg  
RthJ-hs Max. thermal resistance,  
junction to heatsink  
0.076  
0.038  
DC operationsinglesidecooled  
DC operationdouble side cooled  
K/W  
F
Mounting force, 10%  
9800  
(1000)  
83  
N
(Kg)  
g
wt  
Approximate weight  
Case style  
B-43  
See Outline Table  
RthJ-hs Conduction  
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)  
Sinusoidal conduction Rectangular conduction  
Conduction angle  
Units Conditions  
Single Side Double Side Single Side Double Side  
180°  
120°  
90°  
0.006  
0.008  
0.010  
0.015  
0.026  
0.007  
0.008  
0.010  
0.015  
0.025  
0.005  
0.008  
0.011  
0.016  
0.026  
0.005  
0.008  
0.011  
0.015  
0.025  
K/W  
TJ = TJ max.  
60°  
30°  
Ordering Information Table  
Device Code  
SD 60  
3
C
22 S20  
C
1
2
5
7
3
4
6
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode  
Essential part number  
3 = Fast recovery  
C = Ceramic Puk  
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)  
code (see Recovery Characteristics table)  
t
rr  
C = Puk Case B-43  
3
www.irf.com  
SD603C..C Series  
Bulletin I2068 rev. C 04/00  
Outline Table  
3.5 (0.14) DIA. NOM. x  
1.8 (0.07) DEEP MIN. BOTH ENDS  
0.8(0.03) MIN.  
BOTH ENDS  
25.3 (1) DIA. MAX.  
TWO PLACES  
Conform to JEDEC B-43  
All dimensions in millimeters (inches)  
Quote between upper and lower  
pole pieces has to be considered  
after application of Mounting Force  
(see Thermal and Mechanical  
Specification)  
40.5 (1.59) DIA. MAX.  
1 3 0  
1 2 0  
1 1 0  
1 0 0  
90  
130  
120  
110  
100  
90  
SD 6 03C ..C S e rie s  
(Sin g le S id e C o oled )  
(D C ) 0.076 K /W  
SD 603C..C Series  
(Single Side Cooled)  
R
=
R
(DC) = 0.076 K/W  
th J-hs  
thJ-h s  
Con duction Angle  
C ond uction Period  
30°  
80  
60°  
200  
90°  
120°  
80  
6 0°  
70  
18 0°  
9 0°  
3 0°  
180°  
120 °  
D C  
400  
70  
60  
0
5 0  
1 00  
1 50  
2 0 0  
25 0 3 00  
3 50  
0
100  
300  
500  
A ver a g e F orw a rd C u rre n t (A )  
Average Forw ard Current (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
4
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SD603C..C Series  
Bulletin I2068 rev. C 04/00  
130  
120  
110  
100  
90  
13 0  
12 0  
11 0  
10 0  
9 0  
SD603C..C Series  
(Double Side Cooled)  
SD 6 03C ..C S er ie s  
(D ou b le Sid e C ooled )  
R
(DC) = 0.038 K/W  
R
(D C ) = 0 .03 8 K /W  
th J- hs  
th J-hs  
Cond uction Period  
C ond uction Angle  
8 0  
80  
30°  
7 0  
60°  
90°  
70  
120°  
30°  
6 0  
60°  
90°  
180 °  
120°  
60  
5 0  
180°  
D C  
50  
4 0  
0
0
1
100 200 300 400 500 600 700  
Average Forward Current (A)  
0
2 0 0  
40 0  
60 0  
8 00  
1 0 00  
A ve ra g e Fo rw a rd C u rre n t (A )  
Fig. 3 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
1800  
1600  
1400  
1200  
1000  
800  
2500  
2000  
1500  
1000  
500  
D C  
180°  
120°  
90°  
60°  
30°  
180°  
120°  
90°  
60°  
30°  
RMS Lim it  
RMS Limit  
600  
C ondu ction P eriod  
SD603C..C Series  
Con duction An gle  
SD603C..C Series  
400  
T
= 125°C  
J
200  
T
= 125°C  
J
0
0
100  
200  
300  
400  
500  
600  
0
200  
400  
600  
800  
1000  
Average Forw ard C urrent (A)  
Average Forw ard Current (A)  
Fig. 5 - Forward Power Loss Characteristics  
Fig. 6 - Forward Power Loss Characteristics  
8 0 00  
7 5 00  
7 0 00  
6 5 00  
6 0 00  
5 5 00  
5 0 00  
4 5 00  
4 0 00  
3 5 00  
3 0 00  
2 5 00  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
M a x im u m N on Re p etitive S u rg e C u rre n t  
V e rsu s P u lse Tra in D u ra tion .  
A t A n y R a te d Lo a d C o n d ition a n d W ith  
R a te d  
V
Ap p lie d F ollo w in g S u rg e.  
RRM  
In itia l T  
=
1 25 °C  
N o V olta g e R ea p p lie d  
R a te d R e a p p lied  
In itia l T  
= 12 5° C  
J
J
@
@
6 0 H z 0.00 83  
5 0 H z 0.01 00  
s
s
V
RR M  
S D 603 C ..C S erie s  
SD 60 3C ..C S eries  
0.01  
0.1  
1
1 0  
1 0 0  
Pu lse T ra in D u ra tion (s)  
Num ber of Eq ual Am plitude Ha lf C ycle Cu rrent Pu lses (N)  
Fig. 7 - Maximum Non-repetitive Surge Current  
SingleandDoubleSideCooled  
Fig. 8 - Maximum Non-repetitive Surge Current  
SingleandDoubleSideCooled  
5
www.irf.com  
SD603C..C Series  
Bulletin I2068 rev. C 04/00  
0 .1  
10000  
S D 603 C ..C Se rie s  
1000  
0.0 1  
T
T
=
=
25 °C  
J
J
Ste a d y Sta te V a lu e  
0.076 K /W  
(Sin g le S id e C o oled )  
0.038 K /W  
:
125 °C  
R
=
th J- hs  
100  
10  
R
=
th J-hs  
SD 603C ..C S erie s  
(D o ub le Sid e C o oled )  
(D C O p era tion )  
0 .0 01  
.5  
1.5  
2.5  
3.5  
4.5  
5.5  
6.5  
7.5  
8.5  
0 .00 1  
0 .01  
0 .1  
1
10  
10 0  
In stan ta n eou s Forw ard V o lta ge (V )  
Sq u a re W a ve P u lse D ura tion (s)  
Fig. 9 - Forward Voltage Drop Characteristics  
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic  
1 00  
V
F P  
I
T
=
12 5°C  
80  
J
60  
40  
20  
T
= 25°C  
J
SD 603C ..S20 C Se ries  
0
0
2 00  
4 00  
60 0  
8 0 0  
1 00 0  
120 0  
1 40 0  
16 0 0  
18 00  
200 0  
R a te O ff R ise O f Fo rw ar d C urre n t d i/d t (A/ usec )  
Fig. 11 - Typical Forward Recovery Characteristics  
2.2  
2.1  
2
130  
120  
110  
100  
90  
I
= 1000 A  
SD603C..S10C Series  
= 125 °C; V = 30V  
FM  
Squ are Pulse  
I
= 1000 A  
FM  
120  
110  
100  
T
r
J
Squa re P ulse  
I
= 1000 A  
FM  
Squa re Pu lse  
500 A  
250 A  
500 A  
90  
80  
70  
60  
50  
40  
30  
20  
80  
70  
250 A  
1.9  
1.8  
1.7  
1.6  
500 A  
60  
50  
40  
250 A  
30  
SD 603C..S10C Series  
T
S D 603C ..S10C S eries  
= 125 °C; V = 30V  
20  
J
r
T
=
125 ° C ;  
V
= 30V  
r
J
10  
10  
100  
10 20 30 40 50 6 0 7 0 8 0 9 0 100  
10 20 30 40 50 60 70 80 90 100  
Rate Of Fall Of Forwa rd Cu rren t - di/dt (A/µs)  
Rate Of Fall Of Forw ard C urrent - di/d t (A/µs)  
R ate Of Fall Of Forward Current - di/dt (A/µs)  
Fig. 12 - Recovery Time Characteristics  
Fig. 13 - Recovery Charge Characteristics  
Fig. 14 - Recovery Current Characteristics  
6
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SD603C..C Series  
Bulletin I2068 rev. C 04/00  
4
3.5  
3
200  
180  
160  
140  
120  
100  
80  
1 40  
1 30  
1 20  
I
= 1000 A  
FM  
SD603C..S15C Series  
= 125 °C; V = 30V  
I
= 1000 A  
FM  
Squ are Pu lse  
T
J
r
Squa re Pulse  
1 10  
1 00  
90  
I
= 1000 A  
FM  
500 A  
250 A  
Sq uare Pu lse  
500 A  
250 A  
80  
70  
60  
50  
40  
30  
20  
500 A  
250 A  
2.5  
2
SD 603C ..S 15C Series  
SD 60 3C ..S 15C Se rie s  
60  
T
=
125 °C ; V  
= 30V  
J
r
T
=
12 5 ° C ; V  
= 30V  
r
J
40  
10  
100  
10 20 30 40 5 0 60 70 80 90 100  
1 0 20 3 0 40 50 60 7 0 80 90 100  
Ra te O f Fa ll Of Forw a rd Cu rrent - di/d t (A/µs)  
Rate Of Fa ll Of Forw ard Current - d i/dt (A/µs)  
R ate Of Fall Of Forw ard C urrent - di/dt (A/µs)  
Fig. 15 - Recovery Time Characteristics  
Fig. 16 - Recovery Charge Characteristics  
Fig. 17 - Recovery Current Characteristics  
4.5  
200  
150  
S D 603C ..S 20C Serie s  
140  
130  
120  
110  
100  
90  
I
= 1000 A  
FM  
I
= 1000 A  
FM  
180  
160  
140  
120  
100  
80  
T
=
125 °C ; V  
= 30V  
J
r
Sq uare Pulse  
Squ are Pulse  
4
3.5  
3
I
= 1000 A  
500 A  
250 A  
FM  
500 A  
Squa re Pulse  
80  
70  
250 A  
60  
500 A  
250 A  
50  
2.5  
2
SD603C..S20C Series  
= 125 °C; V = 30V  
40  
S D 603C ..S2 0C Se rie s  
60  
T
r
J
T
=
125 °C ; V  
=
30V  
30  
J
r
40  
20  
10  
100  
10 20 30 40 50 60 70 80 90 100  
10 20 30 40 50 60 70 80 90 100  
Rate O f Fall Of Forwa rd C urrent - di/d t (A/µs)  
Ra te Of Fa ll Of Forw ard C urrent - di/dt (A/µs)  
R ate Of Fall Of Forward Current - di/dt (A/µs)  
Fig. 18 - Recovery Time Characteristics  
Fig. 19 - Recovery Charge Characteristics  
Fig. 20 - Recovery Current Characteristics  
1 E4  
20 joules per pulse  
10  
20 joules per p ulse  
4
10  
4
2
1
2
1
0.4  
1 E3  
0.4  
0.2  
0.2  
0.1  
0.04  
0.02  
0.1  
0.01  
1 E2  
SD603C..S10C Series  
Trap ezoida l Pulse  
SD603C..S10 C Series  
Sin usoid al Pulse  
TJ = 125°C , VRRM = 1120V  
d v/dt = 1000V/µ s; di/dt=5 0A/µs  
TJ = 125°C, VRRM  
= 11 20V  
d v/d t = 1000V/µ s  
tp  
tp  
1 E1  
1 E1  
1E1  
1E4 1
1 E2  
1 E3  
1 E4  
1E 2  
1E3  
P ulse Ba se w id th (µs)  
Pu lse Ba sew id th (µ s)  
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics  
7
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SD603C..C Series  
Bulletin I2068 rev. C 04/00  
1E 4  
20 joules p er pulse  
20 joules per pulse  
10  
10  
4
2
4
1
2
1E 3  
0.4  
0.2  
1
0.4  
0.1  
0.04  
0.2  
0.02  
1E 2  
1E 1  
SD603C ..S15C Series  
Tra pezoid al Pu lse  
TJ = 125°C , VRRM  
SD603C..S15C Series  
Sinu soidal Pu lse  
T J = 125°C, VRRM = 1760V  
dv/dt = 1000V/µs  
=
1760V  
tp  
d v/dt = 1 000V /µ s; di/dt=50A/µs  
tp  
1E4 11E1  
1
1 E2  
1 E3  
1 E4  
1E1  
1 E2  
1 E3  
P u lse B ase w id th (µ s)  
P u lse B a sew id th (µ s)  
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics  
1E 4  
1E 3  
1E 2  
1E 1  
20 joules per p ulse  
10  
20 joules per pulse  
10  
4
2
4
2
1
1
0.4  
0.4  
0.2  
0.1  
0.04  
SD603C ..S20C Series  
Trap ezoidal Pu lse  
SD603 C..S20C Series  
Sin u soid al Pu lse  
TJ = 125°C , VRRM = 1760 V  
dv/dt = 1000V/µs  
TJ = 125°C , VRRM = 1760V  
dv /dt 1000V/µ s; di/dt= 50A/µs  
tp  
=
tp  
1E 4  
1E 1  
4
1 E1  
1E2  
1E3  
1E2  
1E3  
1E4  
P ulse Ba sew id th (µ s)  
P u lse B a se w id th s)  
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics  
8
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