SFH486 [INFINEON]
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm; GaAIAs -IR- Lumineszenzdiode 880纳米GaAIAs红外发射880纳米型号: | SFH486 |
厂家: | Infineon |
描述: | GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm |
文件: | 总4页 (文件大小:41K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GaAIAs-IR-Lumineszenzdiode (880 nm)
GaAIAs Infrared Emitter (880 nm)
SFH 486
Area not flat
9.0
0.6
0.4
8.2
5.9
5.5
7.8
7.5
1.8
1.2
0.6
0.4
5.7
5.1
29.5
27.5
Chip position
Anode
Approx. weight 0.5 g
GEX06626
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
Features
● Hergestellt im Schmelzepitaxieverfahren
● Hohe Zuverlässigkeit
● Fabricated in a liquid phase epitaxy process
● High reliability
● Gute spektrale Anpassung an
Si-Fotoempfänger
● Spectral match with silicon photodetectors
Anwendungen
Applications
● IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
● Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
● IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
● Remote control for steady and varying
intensity
Typ
Type
Bestellnummer
Ordering Code
SFH 486
Q62703-Q1094
Semiconductor Group
1
1997-11-01
SFH 486
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 55 ... + 100
°C
Operating and storage temperature range
Sperrschichttemperatur
Junction temperature
Tj
100
5
°C
Sperrspannung
Reverse voltage
VR
V
Durchlaβstrom
Forward current
IF
100
2.5
200
375
mA
A
Stoβstrom, tp = 10 µs, D = 0
Surge current
IFSM
Ptot
Verlustleistung
Power dissipation
mW
K/W
Wärmewiderstand
Thermal resistance
RthJA
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA
λpeak
880
nm
Spektrale Bandbreite bei 50 % von Irel
Spectral bandwidth at 50 % of Irel
IF = 100 mA
∆λ
80
nm
Abstrahlwinkel
Half angle
ϕ
± 11
Grad
deg.
2
Aktive Chipfläche
Active chip area
0.16
mm
A
Abmessungen der aktive Chipfläche
Dimension of the active chip area
L × B
L × W
0.4 × 0.4
mm
mm
Abstand Chipoberfläche bis Linsenscheitel
Distance chip front to lens top
5.1 ... 5.7
H
Semiconductor Group
2
1997-11-01
SFH 486
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Schaltzeiten, Ie von 10 % auf 90 % und von
90 % auf 10 %, bei IF = 100 mA, RL = 50 Ω
Switching times, Ie from 10 % to 90 % and
from 90 % to 10 %, IF = 100 mA, RL = 50 Ω
tr, tf
0.6/0.5
µs
Kapazität
Co
25
pF
Capacitance
VR = 0 V, f = 1 MHz
Durchlaβspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.50 (≤ 1.8)
3.00 (≤ 3.8)
V
V
Sperrstrom
Reverse current
VR = 5 V
IR
0.01 (≤ 1)
µA
Gesamtstrahlungsfluβ
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe
TCI
25
mW
%/K
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
– 0.5
Temperature coefficient of Ie or Φe,
IF = 100 mA
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV
TCλ
– 2
mV/K
nm/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA
0.25
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.001 sr
Grouping of radiant intensity Ie in axial direction
at a solid angle of Ω = 0.001 sr
Bezeichnung
Description
Symbol
Wert
Value
Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie max
40
typ. 60
mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ.
600
mW/sr
Semiconductor Group
3
1997-11-01
SFH 486
I
e
= f (I )
Relative spectral emission
Radiant intensity
Max. permissible forward current
I = f (T )
F
I 100 mA
e
I
= f (λ)
rel
F
A
Single pulse, tp = 20 µs
OHR00877
OHR00878
OHR00880
10 2
100
%
125
Ι e
Ι F mA
Ι e (100mA)
Ι rel
10 1
80
100
10 0
75
50
25
0
60
40
20
10 -1
10 -2
10 -3
0
750
10 0
10 1
10 2
10 3 mA 10 4
0
20
40
60
80 ˚C 100
800
850
900
950 nm 1000
λ
T
Ι F
Forward current
I = f (V ), single pulse, tp = 20 µs
Permissible pulse handling capability
Forward current versus lead length
between the package bottom and the
o
I = f (τ), T = 25 C,
F
F
F
A
o
duty cycle D = parameter
PC-board I = f (l), T = 25 C
F
A
OHR00881
OHR00886
104
120
mA
100
OHR00949
10 1
A
mA
Ι F
Ι F
D
= 0.005
0.01
Ι F
10 0
10 -1
10 -2
10 -3
0.02
0.05
103
102
101
80
60
40
20
0
0.1
0.2
0.5
DC
t p
t p
D =
Ι F
T
T
10-5 10-4 10-3 10-2 10-1 100 101 s 102
t p
0
1
2
3
4
5
6
V
8
0
5
10
15
20
25 mm 30
VF
Radiation characteristics I = f (ϕ)
rel
40
30
20
10
0
OHR01733
1.0
50
0.8
0.6
0.4
60
70
0.2
0
80
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Semiconductor Group
4
1997-11-01
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