SFH486 [INFINEON]

GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm; GaAIAs -IR- Lumineszenzdiode 880纳米GaAIAs红外发射880纳米
SFH486
型号: SFH486
厂家: Infineon    Infineon
描述:

GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
GaAIAs -IR- Lumineszenzdiode 880纳米GaAIAs红外发射880纳米

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中文:  中文翻译
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GaAIAs-IR-Lumineszenzdiode (880 nm)  
GaAIAs Infrared Emitter (880 nm)  
SFH 486  
Area not flat  
9.0  
0.6  
0.4  
8.2  
5.9  
5.5  
7.8  
7.5  
1.8  
1.2  
0.6  
0.4  
5.7  
5.1  
29.5  
27.5  
Chip position  
Anode  
Approx. weight 0.5 g  
GEX06626  
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.  
Wesentliche Merkmale  
Features  
Hergestellt im Schmelzepitaxieverfahren  
Hohe Zuverlässigkeit  
Fabricated in a liquid phase epitaxy process  
High reliability  
Gute spektrale Anpassung an  
Si-Fotoempfänger  
Spectral match with silicon photodetectors  
Anwendungen  
Applications  
IR-Fernsteuerung von Fernseh- und  
Rundfunkgeräten, Videorecordern,  
Lichtdimmern  
Gerätefernsteuerungen für Gleich- und  
Wechsellichtbetrieb  
IR remote control of hi-fi and TV-sets, video  
tape recorders, dimmers  
Remote control for steady and varying  
intensity  
Typ  
Type  
Bestellnummer  
Ordering Code  
SFH 486  
Q62703-Q1094  
Semiconductor Group  
1
1997-11-01  
SFH 486  
Grenzwerte (TA = 25 °C)  
Maximum Ratings  
Bezeichnung  
Description  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Betriebs- und Lagertemperatur  
Top; Tstg  
– 55 ... + 100  
°C  
Operating and storage temperature range  
Sperrschichttemperatur  
Junction temperature  
Tj  
100  
5
°C  
Sperrspannung  
Reverse voltage  
VR  
V
Durchlaβstrom  
Forward current  
IF  
100  
2.5  
200  
375  
mA  
A
Stoβstrom, tp = 10 µs, D = 0  
Surge current  
IFSM  
Ptot  
Verlustleistung  
Power dissipation  
mW  
K/W  
Wärmewiderstand  
Thermal resistance  
RthJA  
Kennwerte (TA = 25 °C)  
Characteristics  
Bezeichnung  
Description  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Wellenlänge der Strahlung  
Wavelength at peak emission  
IF = 100 mA  
λpeak  
880  
nm  
Spektrale Bandbreite bei 50 % von Irel  
Spectral bandwidth at 50 % of Irel  
IF = 100 mA  
∆λ  
80  
nm  
Abstrahlwinkel  
Half angle  
ϕ
± 11  
Grad  
deg.  
2
Aktive Chipfläche  
Active chip area  
0.16  
mm  
A
Abmessungen der aktive Chipfläche  
Dimension of the active chip area  
L × B  
L × W  
0.4 × 0.4  
mm  
mm  
Abstand Chipoberfläche bis Linsenscheitel  
Distance chip front to lens top  
5.1 ... 5.7  
H
Semiconductor Group  
2
1997-11-01  
SFH 486  
Kennwerte (TA = 25 °C)  
Characteristics  
Bezeichnung  
Description  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Schaltzeiten, Ie von 10 % auf 90 % und von  
90 % auf 10 %, bei IF = 100 mA, RL = 50 Ω  
Switching times, Ie from 10 % to 90 % and  
from 90 % to 10 %, IF = 100 mA, RL = 50 Ω  
tr, tf  
0.6/0.5  
µs  
Kapazität  
Co  
25  
pF  
Capacitance  
VR = 0 V, f = 1 MHz  
Durchlaβspannung  
Forward voltage  
IF = 100 mA, tp = 20 ms  
IF = 1 A, tp = 100 µs  
VF  
VF  
1.50 (≤ 1.8)  
3.00 (≤ 3.8)  
V
V
Sperrstrom  
Reverse current  
VR = 5 V  
IR  
0.01 (≤ 1)  
µA  
Gesamtstrahlungsfluβ  
Total radiant flux  
IF = 100 mA, tp = 20 ms  
Φe  
TCI  
25  
mW  
%/K  
Temperaturkoeffizient von Ie bzw. Φe,  
IF = 100 mA  
– 0.5  
Temperature coefficient of Ie or Φe,  
IF = 100 mA  
Temperaturkoeffizient von VF, IF = 100 mA  
Temperature coefficient of VF, IF = 100 mA  
TCV  
TCλ  
– 2  
mV/K  
nm/K  
Temperaturkoeffizient von λ, IF = 100 mA  
Temperature coefficient of λ, IF = 100 mA  
0.25  
Strahlstärke Ie in Achsrichtung  
gemessen bei einem Raumwinkel = 0.001 sr  
Grouping of radiant intensity Ie in axial direction  
at a solid angle of = 0.001 sr  
Bezeichnung  
Description  
Symbol  
Wert  
Value  
Einheit  
Unit  
Strahlstärke  
Radiant intensity  
IF = 100 mA, tp = 20 ms  
Ie min  
Ie max  
40  
typ. 60  
mW/sr  
mW/sr  
Strahlstärke  
Radiant intensity  
IF = 1 A, tp = 100 µs  
Ie typ.  
600  
mW/sr  
Semiconductor Group  
3
1997-11-01  
SFH 486  
I
e
= f (I )  
Relative spectral emission  
Radiant intensity  
Max. permissible forward current  
I = f (T )  
F
I 100 mA  
e
I
= f (λ)  
rel  
F
A
Single pulse, tp = 20 µs  
OHR00877  
OHR00878  
OHR00880  
10 2  
100  
%
125  
Ι e  
Ι F mA  
Ι e (100mA)  
Ι rel  
10 1  
80  
100  
10 0  
75  
50  
25  
0
60  
40  
20  
10 -1  
10 -2  
10 -3  
0
750  
10 0  
10 1  
10 2  
10 3 mA 10 4  
0
20  
40  
60  
80 ˚C 100  
800  
850  
900  
950 nm 1000  
λ
T
Ι F  
Forward current  
I = f (V ), single pulse, tp = 20 µs  
Permissible pulse handling capability  
Forward current versus lead length  
between the package bottom and the  
o
I = f (τ), T = 25 C,  
F
F
F
A
o
duty cycle D = parameter  
PC-board I = f (l), T = 25 C  
F
A
OHR00881  
OHR00886  
104  
120  
mA  
100  
OHR00949  
10 1  
A
mA  
Ι F  
Ι F  
D
= 0.005  
0.01  
Ι F  
10 0  
10 -1  
10 -2  
10 -3  
0.02  
0.05  
103  
102  
101  
80  
60  
40  
20  
0
0.1  
0.2  
0.5  
DC  
t p  
t p  
D =  
Ι F  
T
T
10-5 10-4 10-3 10-2 10-1 100 101 s 102  
t p  
0
1
2
3
4
5
6
V
8
0
5
10  
15  
20  
25 mm 30  
VF  
Radiation characteristics I = f (ϕ)  
rel  
40  
30  
20  
10  
0
OHR01733  
1.0  
50  
0.8  
0.6  
0.4  
60  
70  
0.2  
0
80  
90  
100  
1.0  
0.8  
0.6  
0.4  
0
20  
40  
60  
80  
100  
120  
Semiconductor Group  
4
1997-11-01  

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