SFH507 [INFINEON]
IR-Empfanger fur Fernbedienungen fur kurze Burst IR-Receiver for Remote Control Systems for Short Burst; IR- Empfanger皮草Fernbedienungen皮草kurze突发红外接收器的短脉冲远程控制系统
| 型号： | SFH507 |
| 厂家： | 
Infineon |
| 描述： | IR-Empfanger fur Fernbedienungen fur kurze Burst IR-Receiver for Remote Control Systems for Short Burst |
| 文件： | 总6页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH 507
IR-Empfänger für Fernbedienungen (für kurze Burst)
IR-Receiver for Remote Control Systems (for Short Burst)
31.1
30.1
Surface not flat
16.3
15.9
12.9
12.1
VOUT
VS
GND
1.5
9.7
8.7
0.8 max.
GEX06910
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
Features
● Empfängermodul für Übertragungsprotokolle
mit kurzen Pulspaketen (N ≥ 6 Pulse pro Bit)
● Fotodiode mit integriertem Verstärker
● Receiver module for transmission codes
with short bursts (N ≥ 6 pulses per bit)
● Photodiode with hybride integrated circuit
● Gehäuse schwarz eingefärbt: Verguß optimiert ● Black epoxy resin: daylight filter optimized
für eine Wellenlänge von 950 nm
● Hohe Störsicherheit
● Geringe Stromaufnahme (0.5 mA typ.)
● 5 V Betriebsspannung
for 950 nm
● High immunity against ambient light
● Low power consumption (0.5 mA typ.)
● 5 V supply voltage
● Hohe Empfindlichkeit
● High sensitivity (internal shield case)
● TTL and CMOS compatibility
● 2.4 kbit/s data transmission possible
(N = 6, f0 = 56 kHz)
● TTL und CMOS kompatibel
● Mögliche Datenübertragungsrate 2.4 kbit/s
(N = 6, f0 = 56 kHz)
Anwendungen
Applications
● Empfänger für IR-Fernsteuerungen
● IR-remote control preamplifier module
Typ
Trägerfrequ. Bestellnr.
Typ
Trägerfrequ. Bestellnr.
Carrier
Frequency
kHz
Ordering Code Type
Carrier
Frequency
kHz
Ordering Code
Type
SFH 507-30 30
SFH 507-33 33
SFH 507-36 36
Q62702-P1701 SFH 507-38 38
Q62702-P1704
Q62702-P1705
Q62702-P1822
Q62702-P1702 SFH 507-40 40
Q62702-P1703 SFH 507-56 56
05.97
Semiconductor Group
1
SFH 507
2
VS
Control
Circuit
Input
100 kΩ
3
OUT
GND
PIN
Bandpass
AGC
Demodulator
1
OHF02198
Blockschaltbild
Block Diagram
Grenzwerte (TA = 25°C)
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operation and storage temperature range
TA, Tstg
– 25 ... + 85
100
°C
°C
°C
Sperrschichttemperatur
Junction temperature range
Tj
Löttemperatur
TS
260
Lötstelle 1 mm vom Gehäuse; Lötzeit t ≤ 10 s
Soldering temperature
soldering joint ≥ 1 mm distance from
package, soldering time t ≤10 s
Betriebsspannung
Supply voltage
Pin 2
Pin 2
Pin 3
Pin 3
VS
– 0.3 ... + 6.0
V
Betriebsstrom
Supply current
ICC
5
mA
V
Ausgangsspannung
Output voltage
– 0.3 ... + 6.0
VOUT
IOUT
Ptot
Ausgangsstrom
Output current
5
mA
mW
Verlustleistung
Total power dissipation
TA ≤ 85 °C
50
Semiconductor Group
2
SFH 507
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebsspannung
Supply voltage
VS
typ. 5.0
(4.5 ... 5.5)
V
1)
2
Bestrahlungsstärke (Testsignal, s. Figure 2)
Threshold irradiance (test signal, see Fig. 2) Ee min(56 kHZ)
Ee min(30-40 kHz)
typ. 0.4 (< 0.6)
mW/m
1)
2
typ. 0.45 (< 0.7) mW/m
1)
2
Ee max
30
W/m
nm
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λs max
ϕ
950
Halbwinkel
Half angle
± 45
deg.
Stromaufnahme
Pin 2
Current consumption
Vs = 5 V, Ev = 0
Vs = 5 V, Ev = 40 kIx, sunlight
ICC
ICC
0.5 (< 0.8)
1.0
mA
mA
Ausgangsspannung
Output voltage
Pin 3
VOUT low
≤ 250
mV
2
IOUT = 0.5 mA, Ee = 0.7 mW/m
(Testsignal, s. Figure 2)
(test signal, see Fig. 2)
1)
In Verbindung mit einer typ. SFH 415 bei Betrieb mit IF = 0.5 A wird eine Reichweite von ca. 35 m erreicht.
Together with an IRED SFH 415 under operation conditions of IF = 0.5 A a distance of 35 m is possible.
1)
Semiconductor Group
3
SFH 507
330 Ω *)
+5V
2
3
SFH 506/507
>10 kΩ
optional
4.7
µ
F*)
µ
C
1
GND
OHF02197
*)
only necessary to suppress power supply disturbances
Figure 1 Externe Beschaltung
External circuit
Ee
t
*)
t
pi
T
*)
_
<
N
6 Pulses is recommended for optimal function
VO
VOH
VOL
1)
2)
po
t
t
t
d
1)
4/f < t < 10/f
o
OHF00220
o
d
2) t - 3/f < t < t + 6/f
pi
o
po
pi
o
Figure 2 Optisches Testsignal (IR-Diode SFH 415, IF = 0.5 A, N = 6 pulses, f = f0, T = 10 ms)
Optical test signal
Semiconductor Group
4
SFH 507
Sensitivity vs. electric field disturbance Vertical directivity ϕ
Sensitivity vs. bright ambient
y
E
= f (E), field strength of disturbance,
E
= f (E)
e min
e min
f = f
0
OHF00217
-10
0
10
OHF00246
OHF00215
102
mW/m2
1.0
ϕ
Correlation with ambient light sources
mW/m2
E e min
0.8
(disturbance effect) : 10 W/m2 1.4 klx
_
_
~
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-20
20
_
_
~
(stand. illum. A, T= 2855 K) 8.2 klx
(daylight, T = 5900 K)
Ee min
f (E) = f0
101
100
10-1
0.6
0.4
0.2
0
-30
30
40
-40
-50
f (E) = 10 kHz
50
60
-60
-70
70
80
90
-80
-90
Ambient,λ = 950 nm
-0.6 -0.4 -0.2
0
0.2
0.4
0.6
10-2
10-1
100
101 W/m 2 102
E
0
0.4
0.8
1.2
kV/m
2.0
E
Relative luminous sensitivity
Horizontal directivity ϕ
Sensitivity vs. supply volt. disturbances,
x
o
S
= f (λ), T = 25 C
E
= f (∆V
)
rel
A
e min
S RMS
OHF00214
-10
0
10
OHF00247
101
OHF02193
1.0
0.8
0.6
0.4
0.2
0.0
ϕ
mW/m2
Ee min
f = f 0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-20
20
Srel
10 kHz
1 kHz
-30
30
40
100
-40
-50
50
60
100 Hz
-60
-70
70
80
90
-80
-90
10-1
-0.6 -0.4 -0.2
0
0.2
0.4
0.6
10-2
10-1
100
101
102 mV 103
800 850 900 950 1000 1050 nm 1150
∆Vs RMS
λ
Output pulse
Relative sensitivity E
/E = f (f / f )
Sensitivity vs. dark ambient
e min
e
0
T
, T = f(E )
f = f ± 5 %, ∆f (3 dB) = f /7
T
= f (E )
p out e
on off
e
0
0
OHF00219
OHF00216
OHF00245
1.0
1.0
ms
300
µ
s
Ton,Toff
0.8
E e min /Ee
0.8
Tp out
250
200
150
100
50
Ton
0.6
0.4
0.2
0.0
0.6
0.4
0.2
0
Input burst duration
Toff
λ = 950 nm
λ = 950 nm
10 -1
10 0
10 1
10 2 mW/m 2 10 4
E e
0
10-1
100
101
102
mW/m 2 104
Ee
0.7
0.8
0.9
1.0
1.1
1.2
f / f 0
1.3
Semiconductor Group
5
SFH 507
Sensitivity vs. duty cycle
E
= f (t / T)
e
p
OHL00218
3.0
mW/m2
E e min
2.5
2.0
1.5
0.1
0.5
0.0
N = 6
N = 16
N = 32
0.0
0.2
0.4
0.6
0.8
t p /T
Semiconductor Group
6
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