SFH6319T [INFINEON]

LOW CURRENT, HIGH GAIN OPTOCOUPLER; 低电流，高增益光耦合器


型号：	SFH6319T
厂家：	Infineon
描述：	LOW CURRENT, HIGH GAIN OPTOCOUPLER 低电流，高增益光耦合器光电输出元件
文件：	总3页 (文件大小：36K)
中文：	中文翻译
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SFH6318T

SFH6319T

LOW CURRENT, HIGH GAIN

OPTOCOUPLER

Package Dimensions in Inches (mm)

.120±.002

(3.05±.05)

VCC

Anode

FEATURES

.154±.002

(.391±.05)

.240

(6.10)

•

Industry Standard SOIC-8 Surface Mountable

Package

Cathode

GND

.016

(.41)

•

High Current Transfer Ratio, 800%

Low Input Current, 0.5mA

High Output Current, 60mA

Pin 1

7°

40°

.058±.005

(1.49±.13)

.015±.002

(.38±.05)

.192±.005

(4.88±.13)

Isolation Test Voltage, 2500 VAC

RMS

.004 (.10)

.008 (.20)

TTL Compatible Output, V =0.1 V

Adjustable Bandwidth-Access to Base

Underwriters Lab File #E52744

.125±.005

(3.18±.13)

.008 (.20)

5° max.

R.010

Lead

.021

(.53)

.050

(1.27)

typ.

.020±.004

(.15±.10)

2 plcs.

(.25)

max.

Coplanarity

±.0015 (.04

max.

Available in Tape and Reel (suffix T)

APPLICATIONS

•

Logic Ground Isolation-TTL/TTL, TTL/CMOS,

CMOS/CMOS, CMOS/TTL

TOLERANCE: ±.005 (unless otherwise noted)

Maximum Ratings (25°)

Emitter

•

EIA RS 232C Line Receiver

Low Input Current Line Receiver-Long Lines,

Party Lines

Telephone Ring Detector

117 VAC Line Voltage Status Indication-Low

Input Power Dissipation

Reverse Input Voltage.............................................................. 3 V

Supply and Output Voltage, V (pin 8-5), V (pin 6-5)

SFH6318T..................................................................–0.5 to 7 V

SFH6319T................................................................–0.5 to 18 V

Input Power Dissipation ..................................................... 35mW

Derate Linearly above 50°C

Free Air Temperature................................................ 0.7 mW/°C

Average Input Current......................................................... 20 mA

Peak Input Current .............................................................. 40 mA

(50% Duty Cycle-1 ms pulse width)

•

Low Power Systems-Ground Isolation

DESCRIPTION

Very high current ratio together with 2500 VAC isolation

are achieved by coupling an LED with an integrated high

gain photodetector in a SOIC-8 package. Separate pins

for the photodiode and output stage enable TTL compat-

ible saturation voltages with high speed operation. Pho-

todarlington operation is achieved by tying the VCC and

VO terminals together. Access to the base terminal

allows adjustment to the gain bandwidth.

Peak Transient Input Current

(tp≤1 µsec, 300 pps) ......................................................... 1.0 A

Detector (Si Photodiode + Photodarlington)

Output Current I (pin 6)..................................................... 60 mA

Emitter-Base Reverse Voltage (pin 5-7)................................ 0.5 V

Output Power Dissipation................................................. 150 mW

Derate Linearly from 25°C ........................................... 2 mW/°C

Package

Storage Temperature ......................................... –55°C to +125°C

Operating Temperature........................................ –40°C to +85°C

Lead Soldering Temperature (t=10 sec.).............................260°C

Junction Temperature ..........................................................100°C

Ambient Temperature Range............................. –55°C to +100°C

IsolationTest Voltage between

The SFH6318T is ideal for TTL applications since the

300% minimum current transfer ratio with an LED current

of 1.6 mA enables operation with one unit load-in and

one unit load-out with a 2.2 KΩ pull-up resistor.

The SFH6319T is best suited for low power logic applica-

tions involving CMOS and low power TTL. A 400% cur-

rent transfer ratio with only 0.5 mA of LED current is

guaranteed from 0°C to 70°C.

Emitter and Detector............................................ 2500 VAC

(refer to climate DIN 40046, part 2, Nov. 74)

Pollution Degree (DIN VDE 0110) ................................................2

Creepage Distance.............................................................≥4 mm

Clearance............................................................................≥4 mm

Comparative Tracking Index

RMS

Caution:

Due to the small geometries of this device, it should be

handled with Electrostatic Discharge (ESD) precautions.

Proper grounding would prevent damage further and/or

degradation which may be induced by ESD.

per DIN IEC 112/VDE 0303, part 1.......................................175

Isolation Resistance

=500 V, T =25°C R .............................................≥10

ISOL

Ω

=500 V, T =100°C R

...........................................≥10

ISOL

10.95

Semiconductor Goup

4–48

This document was created with FrameMaker 4.0.3

Electro-Optical Characteristics (T =0°C to 70°C, T =25°C-Typical, unless otherwise specified)

Parameter

Symbol Device

Min

Typ

Max

Units Test Conditions

Note

Current Transfer Ratio

CTR

SFH6318T 300

1600 2600

I =1.6 mA, V =0.4 V, V =4.5 V

1,2

SFH6319T 400

500

1600 2600

2000 3500

I =0.5 mA, V =0.4 V, V =4.5 V

F O CC

I =1.6 mA, V =0.4 V, V =4.5 V

Logic Low

Output Voltage

SFH6318T

SFH6319T

0.1

0.4

I =1.6 mA, I =4.8 mA, V =4.5 V

0.1

0.15

0.25

0.4

I =1.6 mA, I =8 mA, V =4.5 V

F O CC

I =5 mA, I =15 mA, V =4.5 V

F O CC

I =12 mA, I =24 mA, V =4.5 V

Logic High

Output Current

SFH6318T

SFH6319T

0.1

250

100

1.5

µA

I =0 mA, V =V =7 V

0.05

0.2

I =0 mA, V =V =18 V

F O CC

Logic Low Supply Current

Logic High Supply Current

Input Forward Voltage

I =1.6 mA, V =OPEN, V =18 V

F O CC

CCL

0.01

1.4

I =0 mA, V =OPEN, V =18 V

F O CC

CCH

1.7

I =1.6 mA, T =25°C

F A

Temperature Coefficient,

Forward Voltage

∆V /∆T

–1.8

mV/

°C

I =1.6 mA

Input Capacitance

f=1 MHz, V =0

Resistance (Input-Output)

Ω

=500 VDC, T =25°C

I-O

=500 VDC, T =100°C

Capacitance (Input-Output)

0.6

f=1 MHz

I-O

Switching Specifications (T =25°C)

Parameter

Symbol

Device

Min

Typ

Max

Units

Test Conditions

I =1.6 mA, R =2.2 KΩ

Note

Propagation Delay Time

To Logic Low at Output

SFH6318T

SFH6319T

µs

PHL

0.6

I =0.5 mA, R =4.7 KΩ

2,4

I =12 mA, R =270 Ω

F L

Propagation Delay Time

To Logic High at Output

SFH6318T

SFH6319T

µs

I =1.6 mA, R =2.2 KΩ

F L

PLH

1.5

I =0.5 mA, R =4.7 KΩ

2,4

5,6

I =12 mA, R =270 Ω

F L

Common Mode Transient Im- | CM

munity at Logic High Level

Output

1 K

V/µs

I =0 mA, R =2.2 KΩ

=10 V

p-p

Common Mode Transient Im- | CM |

1 K

I =1.6 mA, R =2.2 KΩ

5,6

munity at Logic Low Level Out-

put

=10 V

CM p-p

Notes

1. DC current transfer ratio is defined as the ratio of outpput collector current, I , to the forward LED input current, I times 100%.

2. Pin 7 open.

3. Device considered a two-terminal device: pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together.

4. Using a resistor between pin 5 and 7 will decrease gain and delay time.

5. Common mode transient immunity in logic high level is the maximum tolerable (positive) dV /dt on the leading edge of the commo-

mode pulse, V , to assure that the output will remain in a logic high state (i.e. V >2.0 V) common mode transient immunity in logic

low level is the maximum tolerable (negative) dV /dt on the trailing edge of the common mode puse signal, V , to assure that the

output will remain in a logic low state (i.e. V <0.8 V).

6. In applications where dv/dt may exceed 50,000 V/µs (such as state discharge) a series resistor, R should be included to protect IC

from destructively high surge currents. The recommended value is R_CC

kΩ. Refer to Figure 2.

0.15 I_F(mA)

SFH6318T/6319T

Semiconductor Group

4–49

Figure 1. Switching test circuit

I_F

10% Duty Cycle

1/f<100 µs

+5 V

5 V

V_O

(Saturated

Response)

Pulse

I_F

Generator

Z_O=50 Ω

t =5 ns

R_L

1.5 V

V_OL

V_O

0.1 µF

t_PLH

t_PHL

V_O

(Non-Saturated

Response)

I_F=Monitor

C_L=15pF

5 V

90%

10%

R_m

10%

Figure 2. Test circuit for transient immunity and typical waveforms

_CC(see Note 6)

+5 V

V_CM

0 V

90%

220 Ω

0.1 µF

I_F

10%

R_L

t +t =16 ns

V_O

5 V

Switch at A: I =0 mA

V_FF

V_CM

V_O

–

V_OL

Switch at B: I =1.6 mA

Pulse Generator

SFH6318T/6319T

Semiconductor Group

4–50

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