SGB20N60_06 [INFINEON]

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation; 在NPT技术降低75 %的Eoff快速IGBT相比上一代
SGB20N60_06
型号: SGB20N60_06
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
在NPT技术降低75 %的Eoff快速IGBT相比上一代

双极性晶体管
文件: 总11页 (文件大小:795K)
下载:  下载PDF数据表文档文件

SGB20N60ATMA1

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3

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0 INFINEON

SGB20UF

60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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4 SSDI

SGB20UF

HIGH VOLTAGE RECTIFIER

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11 SSDI

SGB20UFS

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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0 SSDI

SGB20UFS

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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0 SSDI

SGB20UFSMS

60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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3 SSDI

SGB20UFSMS

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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6 SSDI

SGB20UFSMSS

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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15 SSDI

SGB20UFSMSS

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED, SMS, 2 PIN

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0 SSDI

SGB20UFSMSTX

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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6 SSDI

SGB20UFSMSTXV

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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7 SSDI

SGB20UFSMSTXV

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED, SMS, 2 PIN

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0 SSDI

SGB20UFTX

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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0 SSDI

SGB20UFTXV

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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0 SSDI

SGB20UFTXV

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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0 SSDI