SGU06N60 [INFINEON]
Fast IGBT in NPT-technology; 在NPT技术的快速IGBT
| 型号： | SGU06N60 |
| 厂家： | 
Infineon |
| 描述： | Fast IGBT in NPT-technology |
| 文件： | 总12页 (文件大小：390K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGP06N60, SGB06N60
SGD06N60, SGU06N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
C
- Motor controls
- Inverter
G
P-TO-251-3-1 (I-PAK)
(TO-251AA)
E
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-252-3-1 (D-PAK) P-TO-220-3-1
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
(TO-252AA)
(TO-220AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat)
Tj
Package
Ordering Code
SGP06N60
SGB06N60
SGD06N60
SGU06N60
600V
6A
2.3V
TO-220AB
Q67040-S4450
Q67040-S4448
Q67041-A4709
Q67040-S4449
150°C
TO-263AB
TO-252AA(DPAK)
TO-251AA(IPAK)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
VCE
IC
600
V
A
12
6.9
TC = 100°C
Pulsed collector current, tp limited by Tjmax
ICpul s
-
24
24
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
VG E
EAS
V
±20
Avalanche energy, single pulse
IC = 6 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
34
mJ
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
tSC
10
68
µs
Pt ot
W
TC = 25°C
Operating junction and storage temperature
Tj , Tstg
-55...+150
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02
SGP06N60, SGB06N60
SGD06N60, SGU06N60
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Rt hJC
Rt hJA
Rt hJA
1.85
K/W
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
TO-251AA
TO-220AB
TO-252AA
TO-263AB
75
62
50
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V( BR)CES
600
-
-
V
VG E=0V, IC =500µA
Collector-emitter saturation voltage
VC E( sat ) VG E = 15V, IC =6A
Tj =25°C
1.7
-
2.0
2.3
2.4
2.8
Tj =150°C
Gate-emitter threshold voltage
VG E(t h)
ICES
3
4
5
IC =250µA,VCE=VGE
VCE=600V,VGE=0V
Tj =25°C
Zero gate voltage collector current
µA
-
-
-
-
20
700
Tj =150°C
Gate-emitter leakage current
Transconductance
IGES
gfs
VCE=0V,VG E=20V
VCE=20V, IC =6A
-
-
-
100
-
nA
S
4.2
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
VG E=0V,
-
-
-
-
350
38
420
46
pF
Output capacitance
Coss
Crss
f=1MHz
Reverse transfer capacitance
Gate charge
23
28
QGate
VCC =480V, IC =6A
VG E=15V
32
42
nC
nH
A
Internal emitter inductance
LE
TO-220AB
-
-
7
-
-
measured 5mm (0.197 in.) from case
Short circuit collector current2)
IC( SC)
60
VG E=15V,tSC≤10µs
VCC ≤ 600V,
Tj ≤ 150°C
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Jul-02
SGP06N60, SGB06N60
SGD06N60, SGU06N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Tj =25°C,
CC =400V,IC =6A,
VG E=0/15V,
td(on)
tr
td( off)
tf
-
-
-
-
-
-
-
25
18
30
22
ns
V
Turn-off delay time
Fall time
220
264
65
RG=50Ω,
1)
Lσ =180nH,
54
1)
Cσ =250pF
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Et s
0.110
0.105
0.215
0.127 mJ
0.137
Energy losses include
“tail” and diode
reverse recovery.
0.263
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Tj =150°C
td(on)
tr
td( off)
tf
-
-
-
-
-
-
-
24
17
29
20
ns
V
V
CC =400V, IC =6A,
G E=0/15V,
Turn-off delay time
Fall time
248
298
84
RG=50Ω,
1)
Lσ =180nH,
70
1)
Cσ =250pF
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Et s
0.167
0.153
0.320
0.192 mJ
0.199
Energy losses include
“tail” and diode
reverse recovery.
0.391
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Jul-02
SGP06N60, SGB06N60
SGD06N60, SGU06N60
Ic
tp=2µs
30A
20A
10A
0A
10A
15µs
TC=80°C
50µs
1A
TC=110°C
200µs
1ms
Ic
DC
0.1A
1V
10V
100V
1000V
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 50Ω)
15A
10A
5A
80W
60W
40W
20W
0W
0A
25°C
50°C
75°C 100°C 125°C
25°C
50°C
75°C 100°C 125°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 150°C)
(VGE ≤ 15V, Tj ≤ 150°C)
4
Jul-02
SGP06N60, SGB06N60
SGD06N60, SGU06N60
20A
15A
10A
5A
20A
15A
VGE=20V
15V
13V
VGE=20V
15V
13V
11V
9V
7V
5V
10A
11V
9V
7V
5V
5A
0A
0V
0A
0V
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
Figure 6. Typical output characteristics
(Tj = 25°C)
(Tj = 150°C)
20A
4.0V
18A
16A
14A
12A
10A
8A
Tj=+25°C
IC = 12A
3.5V
-55°C
+150°C
3.0V
IC = 6A
2.5V
2.0V
1.5V
1.0V
6A
4A
2A
0A
0V
2V
4V
6V
8V
10V
-50°C
0°C
50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE
Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
Figure 8. Typical collector-emitter
(VCE = 10V)
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Jul-02
SGP06N60, SGB06N60
SGD06N60, SGU06N60
td(off)
td(off)
100ns
tf
tf
100ns
td(on)
td(on)
tr
tr
10ns
0A
10ns
3A
6A
9A
12A
15A
0Ω
50Ω
100Ω
150Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 6A,
VGE = 0/+15V, RG = 50Ω,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
td(off)
100ns
tf
max.
td(on)
typ.
tr
min.
10ns
0°C
50°C
100°C
150°C
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 6A, RG = 50Ω,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.25mA)
Dynamic test circuit in Figure E)
6
Jul-02
SGP06N60, SGB06N60
SGD06N60, SGU06N60
0.8mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
0.6mJ
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
Ets*
due to diode recovery.
Ets*
0.4mJ
Eoff
Eon*
Eon*
0.2mJ
Eoff
0.0mJ
0A
3A
6A
9A
12A
15A
0Ω
50Ω
100Ω
150Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 6A,
VGE = 0/+15V, RG = 50Ω,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
0.4mJ
*) Eon and Ets include losses
due to diode recovery.
D=0.5
100K/W
Ets*
0.2
0.1
0.3mJ
0.2mJ
0.1mJ
0.0mJ
0.05
10-1K/W
0.02
Eon*
R , ( K / W )
0.705
0.561
τ , ( s )
0.0341
3.74E-3
3.25E-4
0.01
Eoff
0.583
10-2K/W
R1
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10-3K/W
1µs
0°C
50°C
100°C
150°C
10µs 100µs 1ms 10ms 100ms 1s
tp, PULSE WIDTH
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 6A, RG = 50Ω,
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
Dynamic test circuit in Figure E)
7
Jul-02
SGP06N60, SGB06N60
SGD06N60, SGU06N60
25V
20V
15V
10V
5V
1nF
Ciss
120V
480V
100pF
Coss
Crss
0V
0nC
10pF
15nC
30nC
45nC
0V
10V
20V
30V
QGE, GATE CHARGE
Figure 17. Typical gate charge
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
(IC = 6A)
25µs
100A
20µs
15µs
10µs
5µs
80A
60A
40A
20A
0A
0µs
10V
11V
12V
13V
14V
15V
10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ≤ 600V, Tj = 150°C)
8
Jul-02
SGP06N60, SGB06N60
SGD06N60, SGU06N60
dimensions
TO-220AB
symbol
[mm]
[inch]
min
9.70
14.88
0.65
3.55
2.60
6.00
13.00
4.35
0.38
0.95
max
10.30
15.95
0.86
3.89
3.00
6.80
14.00
4.75
0.65
1.32
min
max
A
B
C
D
E
F
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.4055
0.6280
0.0339
0.1531
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
G
H
K
L
M
N
P
T
2.54 typ.
0.1 typ.
4.30
4.50
1.40
2.72
0.1693
0.0461
0.0906
0.1772
0.0551
0.1071
1.17
2.30
TO-263AB (D2Pak)
dimensions
symbol
[mm]
[inch]
min
9.80
0.70
1.00
1.03
max
10.20
1.30
1.60
1.07
min
max
A
B
C
D
E
F
0.3858
0.0276
0.0394
0.0406
0.4016
0.0512
0.0630
0.0421
2.54 typ.
0.65 0.85
5.08 typ.
0.1 typ.
0.0256
0.0335
G
H
K
L
0.2 typ.
4.30
4.50
1.37
9.45
2.50
0.1693
0.0461
0.3563
0.0906
0.1772
0.0539
0.3720
0.0984
1.17
9.05
2.30
M
N
P
Q
R
S
T
15 typ.
0.5906 typ.
0.00
4.20
0.20
5.20
0.0000
0.1654
0.0079
0.2047
8° max
8° max
2.40
0.40
3.00
0.60
0.0945
0.0157
0.1181
0.0236
U
V
W
X
Y
Z
10.80
1.15
6.23
4.60
9.40
16.15
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
9
Jul-02
SGP06N60, SGB06N60
SGD06N60, SGU06N60
dimensions
P-TO252 (D-Pak)
symbol
[mm]
inch]
min
6.40
5.25
max
6.73
5.50
min
max
A
B
C
D
E
F
0.2520
0.2067
0.2650
0.2165
(0.65)
0.63
(1.15) (0.0256) (0.0453)
0.89
0.0248
0.0350
2.28
0.2520
2.19
0.76
0.90
5.97
9.40
0.46
0.87
0.51
5.00
4.17
0.26
-
2.39
0.98
1.21
6.23
10.40
0.58
1.15
-
0.0862
0.0299
0.0354
0.2350
0.3701
0.0181
0.0343
0.0201
0.1969
0.1642
0.0102
-
0.0941
0.0386
0.0476
0.2453
0.4094
0.0228
0.0453
-
G
H
K
L
M
N
P
R
S
T
-
-
-
-
1.02
-
0.0402
-
U
dimensions
P-TO251 (I-Pak)
symbol
[mm]
[inch]
min
6.47
5.25
4.19
0.63
max
6.73
5.41
4.43
0.89
min
max
A
B
C
D
E
F
0.2547
0.2067
0.1650
0.0248
0.2650
0.2130
0.1744
0.0350
2.29 typ.
2.18
0.0902 typ.
2.39
0.86
1.11
6.23
9.65
0.56
1.15
0.0858
0.0299
0.0398
0.2350
0.3598
0.0181
0.0386
0.0941
0.0339
0.0437
0.2453
0.3799
0.0220
0.0453
G
H
K
L
0.76
1.01
5.97
9.14
0.46
0.98
M
N
10
Jul-02
SGP06N60, SGB06N60
SGD06N60, SGU06N60
τ1
r1
τ2
r 2
τn
r n
T (t)
j
p(t)
r 2
r1
rn
T
C
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
and Stray capacity Cσ =250pF.
11
Jul-02
SGP06N60, SGB06N60
SGD06N60, SGU06N60
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
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12
Jul-02
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