SI4410DYTRPBF [INFINEON]
N-Channel MOSFET; N沟道MOSFET
| 型号： | SI4410DYTRPBF |
| 厂家： | 
Infineon |
| 描述： | N-Channel MOSFET |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95168
Si4410DYPbF
HEXFET® Power MOSFET
l N-Channel MOSFET
l Low On-Resistance
l Low Gate Charge
l Surface Mount
l Logic Level Drive
l Lead-Free
A
A
D
1
2
3
4
8
S
S
S
G
VDSS = 30V
7
D
6
D
5
D
RDS(on) = 0.0135Ω
Description
Top View
This N-channel HEXFET® Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low on-
resistance and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in typical board
mount applications.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
30
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
±10
±8.0
A
±50
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
2.5
W
1.6
Linear Derating Factor
0.02
W/°C
V/ns
mJ
dv/dt
EAS
Peak Diode Recovery dv/dt ꢀ
Single Pulse Avalanche Energy
Gate-to-Source Voltage
5.0
400
VGS
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
RθJA
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1
09/22/04
Si4410DYPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.0100.0135
––– 0.015 0.020
1.0 ––– –––
––– 35 –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 5.0A
VDS = VGS, ID = 250µA
VDS = 15V, ID = 10A
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 30
45
ID = 10A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 5.4 –––
––– 6.5 –––
––– 11 –––
––– 7.7 –––
––– 38 –––
––– 44 –––
––– 1585 –––
––– 739 –––
––– 106 –––
nC VDS = 15V
VGS = 10V, See Fig. 10
VDD = 25V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 25Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Diode Conduction)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
2.3
A
G
ISM
integral reverse
50
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– 0.7 1.1
––– 50 80
V
TJ = 25°C, IS = 2.3A, VGS = 0V
ns
TJ = 25°C, IF = 2.3A
Notes:
Starting TJ = 25°C, L = 8.0mH
Repetitive rating; pulse width limited by
RG = 25Ω, IAS = 10A. (See Figure 15)
max. junction temperature.
ꢀ ISD ≤2.3A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on FR4 Board, t ≤10 sec
2
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Si4410DYPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
10A
=
I
D
T = 25°C
J
T = -55°C
J
1.5
1.0
0.5
0.0
T = 150°C
J
100
VDS = 25V
20µs PULSE WIDTH
V
=10V
GS
10
A
16
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
4
8
12
T , Junction Temperature( C)
J
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
Si4410DYPbF
20
16
12
8
2400
I = 10A
D
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
V
V
= 24V
= 15V
C
= C + C
DS
DS
iss
gs
gd ,
C
= C
rss
gd
2000
1600
1200
800
400
0
C
= C + C
gd
oss
ds
C
iss
C
oss
4
C
rss
0
1
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
J
1
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
10ms
100
0.1
0.4
1
0.1
0.5
0.6
0.7
0.8
0.9
1.0
1
10
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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Si4410DYPbF
100
80
60
40
20
0
10.0
8.0
6.0
4.0
2.0
0.0
A
25
50
75
100
125
150
0.01
0.1
1
10
100
°
, Case Temperature ( C)
T
Time (sec)
C
Fig 10. Typical Power Vs. Time
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.1
0.02
0.01
P
2
DM
t
1
t
SINGLE PULSE
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
Si4410DYPbF
0.20
0.16
0.12
0.08
0.03
0.02
0.01
0.00
I
= 10A
D
V
V
= 10V
GS
= 4.5V
GS
0.04
0.00
A
A
3
4
5
6
7
8
9
10
0
10
20
30
40
50
V
, Gate-to-Source Voltage (V)
I , Drain Current (A)
D
GS
Fig 12. Typical On-Resistance Vs. Drain
Fig 13. Typical On-Resistance Vs. Gate
Current
Voltage
1000
3.0
2.5
I
D
TOP
4.5A
8.0A
800
600
400
200
0
BOTTOM 10A
I
=250µA
D
2.0
1.5
A
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
Starting T , Junction Temperature ( C)
J
T
, Junction Temperature (°C)
J
Fig 14. Typical Threshold Voltage Vs.Temperature
Fig 15. Maximum Avalanche Energy
Vs. Drain Current
6
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Si4410DYPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
4
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PR INT
8X 0.72 [.028]
NOTES:
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIME NS ION: MILLIMET E R
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES].
4. OUT LINE CONF ORMS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBST RATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOS FET)
DATE CODE (YWW)
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
XXXX
F7101
WW = WE E K
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB L Y S IT E CODE
LOT CODE
PART NUMBER
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7
Si4410DYPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
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