SI4412DY-T1 [VISHAY]
Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | SI4412DY-T1 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4412DY
N-Channel 30-V (D-S) Rated MOSFET
Product Summary
VDS (V)
rDS(on) (W)
ID (A)
0.028 @ V = 10 V
"7.0
"5.8
GS
30
0.042 @ V = 4.5 V
GS
D D D
D
SO-8
S
S
D
D
D
D
1
2
3
4
8
7
6
5
G
S
G
Top View
S
S
S
N-Channel MOSFET
Absolute Maximum Ratings (TA = 25 C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
30
"20
"7.0
"5.8
"30
2.3
DS
GS
V
T
= 25 C
= 70 C
A
a
Continuous Drain Current (T = 150 C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
I
S
T
= 25 C
= 70 C
2.5
A
a
Maximum Power Dissipation
P
W
C
D
T
A
1.6
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
stg
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
a
Maximum Junction-to-Ambient
R
thJA
50
C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70154.
A SPICE Model data sheet is available for this product (FaxBack document #70552).
Siliconix
1
S-49534—Rev. C, 06-Oct-97
Si4412DY
Specifications (TJ = 25 C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
V
GS(th)
DS
GS
D
V
= 0 V, V = "20 V
GS
I
"100
2
nA
DS
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
A
DSS
V
= 30 V, V = 0 V, T = 55 C
25
DS
GS
J
b
On-State Drain Current
I
V
w 5 V, V = 10 V
30
D(on)
DS
GS
V
= 10 V, I =7.0 A
0.021
0.030
16
0.028
0.042
GS
GS
D
b
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 3.5 A
D
b
Forward Transconductance
g
V
= 15 V, I = 7.0 A
S
fs
DS
D
b
Diode Forward Voltage
V
I
= 2 A, V = 0 V
0.75
1.1
29
V
SD
S
GS
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
19.5
3.4
2.7
9
g
Q
V
= 15 V, V = 10 V, I = 2 A
nC
ns
gs
gd
DS
GS
D
Q
t
15
20
55
28
80
d(on)
t
12
38
19
45
r
V
= 25 V, R = 25 W
L
= 10 V, R = 6 W
GEN G
DD
^ 1 A, V
I
D
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
I = 2 A, di/dt = 100 A/ms
F
rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
2
Siliconix
S-49534—Rev. C, 06-Oct-97
Si4412DY
Typical Characteristics (25 C Unless Otherwise Noted)
Output Characteristics
Transfer Characteristics
30
24
18
12
6
30
24
18
12
6
V
= 10, 9, 8, 7, 6, 5 V
4 V
GS
T
C
= 125 C
3 V
4
25 C
–55 C
4
0
0
0
1
2
3
5
0
1
2
3
5
6
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
OnĆResistance vs. Drain Current
Capacitance
0.05
0.04
0.03
0.02
0.01
0
1500
1200
900
600
300
0
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
0
6
12
18
24
30
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
OnĆResistance vs. Junction Temperature
10
8
2.0
1.6
1.2
0.8
0.4
0
V
= 15 V
= 2 A
V
= 10 V
GS
DS
I
I = 7 A
D
D
6
4
2
0
0
4
8
12
16
20
–50 –25
0
25
50
75 100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature ( C)
J
g
Siliconix
S-49534—Rev. C, 06-Oct-97
3
Si4412DY
Typical Characteristics (25 C Unless Otherwise Noted)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0
30
10
T = 150 C
J
T = 25 C
J
I
= 7 A
D
1
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
SD
Threshold Voltage
Single Pulse Power
50
40
30
20
10
0
0.4
0.2
I
D
= 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
–1.0
–50 –25
0
25
50
75 100 125 150
0.01
0.10
1.00
Time (sec)
10.00
T – Temperature ( C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2. Per Unit Base = R
2
= 50 C/W
thJA
0.02
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
4
Siliconix
S-49534—Rev. C, 06-Oct-97
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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