SI4420DY [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | SI4420DY |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93835
Si4420DY
HEXFET® Power MOSFET
l N-Channel MOSFET
l Low On-Resistance
l Low Gate Charge
l Surface Mount
A
A
D
1
2
3
4
8
S
S
VDSS = 30V
7
D
6
S
D
l Logic Level Drive
5
G
D
RDS(on) = 0.009Ω
Top View
Description
This N-channel HEXFET® power MOSFET is produced
using International Rectifier's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
30
±12.5
±10
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
±50
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
2.5
W
1.6
Linear Derating Factor
0.02
W/°C
mJ
V
EAS
Single Pulse Avalanche Energy
Gate-to-Source Voltage
400
VGS
± 20
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
RθJA
www.irf.com
1
1/3/2000
Si4420DY
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.009
––– ––– 0.013
1.0 ––– –––
––– 29 –––
––– ––– 1.0
––– ––– 5.0
––– ––– -100
––– ––– 100
VGS = 10V, ID = 12.5A
VGS = 4.5V, ID = 10.5A
VDS = VGS, ID = 250µA
VDS = 15V, ID = 12.5A
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 52
78
ID = 12.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 8.7 –––
––– 12 –––
––– 15 –––
––– 10 –––
––– 55 –––
––– 47 –––
––– 2240 –––
––– 1100 –––
––– 150 –––
nC VDS = 15V
VGS = 10V, See Fig. 6
VDD = 15V
ID = 1.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 15Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Diode Conduction)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– 2.3
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 50
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– ––– 1.1
––– 52 78
V
TJ = 25°C, IS = 2.3A, VGS = 0V
ns
TJ = 25°C, IF = 2.3A
Notes:
Starting TJ = 25°C, L = 13mH
Repetitive rating; pulse width limited by
RG = 25Ω, IAS = 8.9A. (See Figure 15)
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on FR4 Board, t ≤10 sec
2
www.irf.com
Si4420DY
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
12.5A
=
I
D
1000
T
= 25°C
J
1.5
1.0
0.5
0.0
T
= -55°C
J
T
= 150°C
J
100
V
= 25V
DS
20µs PULSE WIDTH
10
V
= 10V
GS
4.0
5.0
6.0
7.0
8.0
9.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
Si4420DY
20
16
12
8
4000
I
D
= 12.5A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
V
V
= 24V
= 15V
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
3000
2000
1000
0
C
C
iss
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
20
Q
40
60 80
100
V
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
°
DS(on)
T = 25 C
J
°
T = 150 C
J
100
10
1
100us
1ms
10ms
°
T = 25 C
C
J
°
T = 150 C
V
= 0 V
Single Pulse
GS
4.0
1
0.1
0.0
1.0
SD
2.0
3.0
5.0
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
Si4420DY
100
80
60
40
20
0
14
12
10
8
6
4
2
0
A
25
50
T
75
100
125
150
0.01
0.1
1
10
100
°
, Case Temperature ( C)
Tim e (sec)
C
Fig 10. Typical Power Vs. Time
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.01
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
Si4420DY
0.20
0.16
0.12
0.08
0.04
0.00
0.012
0.010
0.008
0.006
I
= 12.5A
D
V
V
= 10V
G S
G S
= 4.5V
A
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0
10
20
30
40
50
V
Gate -to -Source Voltage (V)
GS,
I
, D rain Current (A)
D
Fig 12. Typical On-Resistance Vs. Drain
Fig 13. Typical On-Resistance Vs. Gate
Current
Voltage
3.0
2.5
1000
I
D
TOP
4.0A
7.1A
BOTTOM 8.9A
800
600
400
200
0
I
= 250µA
D
2.0
1.5
1.0
-60
-20
20
60
100
140
180
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
T
, Temperature (°C)
J
Fig 14. Typical Threshold Voltage Vs.Temperature
Fig 15. Maximum Avalanche Energy
Vs. Drain Current
6
www.irf.com
Si4420DY
SO-8 Package Outline
SO-8 Part Marking Information
www.irf.com
7
Si4420DY
SO-8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TER M IN AL N U M BE R
1
12.3 ( .484
11.7 ( .461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED D IRE C TIO N
N O TES :
1 . C O N TR O L LIN G D IM EN SIO N : M ILL IM ETER .
2 . A LL D IM EN SIO N S A RE SH O W N IN M ILL IM ETER S(INC H ES).
3 . O UTL IN E C O N FO R M S TO EIA -4 81 & EIA-54 1.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
N O TE S :
1. C O N TR O LLIN G D IM EN SIO N : M ILLIM ETER .
2. O UTLIN E C O N FO RM S TO EIA -481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 1/2000
8
www.irf.com
相关型号：
SI4420DY/T3
TRANSISTOR 12.5 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Small Signal
NXP
SI4420DYD84Z
Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
SI4420DYL86Z
Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
SI4420DYL99Z
Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
SI4420DYS62Z
Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
SI4420DYTRPBF
Power Field-Effect Transistor, 12.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON
©2020 ICPDF网 联系我们和版权申明