SI4435DYTRPBF [INFINEON]
Power Field-Effect Transistor,;
| 型号： | SI4435DYTRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93768A
Si4435DY
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
A
1
2
8
D
S
S
VDSS = -30V
7
D
l Available in Tape & Reel
3
4
6
S
D
5
G
D
RDS(on) = 0.020Ω
Top View
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
-30
V
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-8.0
-6.4
A
-50
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
2.5
W
Power Dissipation
1.6
Linear Derating Factor
0.02
W/°C
V
VGS
Gate-to-Source Voltage
± 20
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
RθJA
www.irf.com
1
10/14/99
Si4435DY
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.019 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.015 0.020
––– 0.026 0.035
-1.0 ––– –––
––– 11 –––
––– ––– -10
––– ––– -10
––– ––– -100
––– ––– 100
VGS = -10V, ID = -8.0A
VGS = -4.5V, ID = -5.0A
VDS = VGS, ID = -250µA
VDS = -15V, ID = -8.0A
VDS = -24V, VGS = 0V
VDS = -15V, VGS = 0V, TJ = 70°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 40
60
ID = -4.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 7.1 –––
––– 8.0 –––
nC VDS = -15V
VGS = -10V
––– 16
24
VDD = -15V, VGS = -10V
––– 76 110
––– 130 200
––– 90 140
––– 2320 –––
––– 390 –––
––– 270 –––
ID = -1.0A
RG = 6.0Ω
RD = 15Ω
VGS = 0V
VDS = -15V
ƒ = 1.0kHz
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
–––
–––
-2.5
-50
–––
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
––– 34
––– 33
51
50
ns
nC
Qrr
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
www.irf.com
Si4435DY
1000
100
10
1000
100
10
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
TOP
TOP
BOTTOM -2.7V
BOTTOM-2.7V
-2.70V
1
1
-2.70V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
-8.0A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
V
= -15V
DS
V
= -10V
20µs PULSE WIDTH
GS
1
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
4.0
5.0 6.0
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
Si4435DY
20
16
12
8
3500
I
D
= -4.6A
V
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
=-15V
DS
C
= C
gd
3000
2500
2000
1500
1000
500
rss
C
= C + C
oss
ds
C
iss
4
C
oss
C
rss
0
0
0
10
20
30
40
50
60
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.2
0.1
0.4
0.1
1
10
100
0.6
0.8
1.0
1.4
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
Si4435DY
8.0
6.0
4.0
2.0
0.0
0.20
0.10
0.00
Id = -250µA
-0.10
-0.20
-0.30
-0.40
-50
-25
0
25
50
75
100 125 150
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
T , Temperature ( °C )
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Typical Vgs(th) Variance Vs.
Case Temperature
Juction Temperature
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
P
DM
t
1
0.1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
Si4435DY
0.10
0.08
0.06
0.04
0.02
0.00
0.10
0.08
0.06
0.04
0.02
0.00
VGS= - 4.5V
Id = -8.0A
VGS = -10V
2
4
6
8
10
12
14
16
0
10
20
30
40
-V
Gate -to -Source Voltage ( V )
-I , Drain Current ( A )
GS,
D
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
6
www.irf.com
Si4435DY
SO-8 Package Details
INCHES
MILLIMETERS
DIM
D
MIN
MAX
MIN
1.35
0.10
MAX
1.75
0.25
5
- B -
A
.0532
.0040
.0688
.0098
A1
B
8
1
7
2
6
3
5
4
5
.014
.0075
.189
.150
.018
.0098
.196
.157
0.36
0.19
4.80
3.81
0.46
0.25
4.98
3.99
H
E
0.25 (.010)
M
A M
- A -
C
D
E
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 45°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C -
0.10 (.004)
6
C
8X
L
8X
A1
L
B
8X
θ
0.25 (.010)
M
C A S B S
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028
8X
)
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION INCH.
:
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46
( .255 )
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO
A
SUBSTRATE..
6
1.27
(
.050
)
3X
SO-8 Part Marking
www.irf.com
7
Si4435DY
SO-8 Tape and Reel
T ER M IN AL N U M B E R
1
12.3
11.7
(
(
.484
.461
)
)
8 .1 ( .318
7 .9 ( .312
)
)
F E ED D IR EC TIO N
N O TE S :
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S TO E IA -4 8 1
& E IA -5 4 1 .
330.00
(12.992)
M A X .
14.40
12.40
(
(
.566
.488
)
)
N O TE S
1. C O N T R O LLIN G D IM E N SIO N : M ILL IM E TE R .
2. O U TL IN E C O N F O R M S TO EIA -481 E IA -541.
:
&
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 10/99
8
www.irf.com
相关型号：
SI4435DY_NL
Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
SI4441EDY-E3
Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
©2020 ICPDF网 联系我们和版权申明