SI4441EDY-E3 [VISHAY]
Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | SI4441EDY-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4441EDY
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D ESD Protected: 2500 V
APPLICATIONS
0.016 @ V = -10 V
-10.6
-8.3
GS
-30
0.026 @ V = -4.5
GS
V
D Battery and Load Switching
- Notebook
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
D
Top View
P-Channel MOSFET
Ordering Information: Si4441EDY
Si4441EDY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
-30
DS
V
"20
GS
T
= 25_C
= 70_C
-8.1
-6.5
-10.6
-8.5
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
-40
DM
a
continuous Source Current (Diode Conduction)
I
-2.1
2.5
-1.3
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.6
0.9
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
37
70
16
50
85
20
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72133
S-03597—Rev. A, 31-Mar-03
www.vishay.com
1
Si4441EDY
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V , I = -250 mA
-1.0
-3.0
V
GS
D
V
= 0 V, V = "10 V
"20
mA
DS
DS
GS
Gate-Body Leakage
I
GSS
V
= 0 V, V = "20 V
"1
mA
GS
V
= -24 V, V = 0 V
-1
-5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -24 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
V
DS
v -5 V, V = -10 V
-40
A
D(on)
GS
V
= -10 V, I = -10.6 A
0.013
0.020
0.016
0.026
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= -4.5 V, I = -8.3 A
D
GS
DS
a
Forward Transconductance
g
fs
43
S
V
V
= -15 V, I = -10.6 A
D
a
Diode Forward Voltage
V
SD
I
S
= -2.1 A, V = 0 V
-0.8
-1.2
70
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
45.5
6.5
12.5
5
g
Q
Q
V
= -15 V, V = -10 V, I = -10.6 A
nC
gs
gd
DS
GS
D
t
8
d(on)
t
r
11
20
70
55
V
= -15 V, R = 15 W
L
DD
ms
I
D
^ -1 A, V
= -10 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
45
d(off)
t
f
35
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate−Current vs. Gate−Source Voltage
Gate Current vs. Gate−Source Voltage
3.0
10,000
1,000
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
T
= 150_C
J
0.1
T
= 25_C
J
0.01
0.001
0.0001
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V
GS
- Gate-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72133
S-03597—Rev. A, 31-Mar-03
www.vishay.com
2
Si4441EDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
30
25
20
15
10
5
4 V
V
GS
= 10 thru 5 V
32
24
16
8
T
= 125_C
C
3 V
1.5
25_Cx
-55_C
0
0
0.0
0.5
DS
1.0
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On−Resistance vs. Drain Current
Gate Charge
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
10
8
V
= 15 V
= 10.6 A
DS
I
D
6
V
= 4.5 V
= 10 V
GS
4
V
GS
2
0.000
0
0
8
16
24
32
40
0
10
20
30
40
50
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
On−Resistance vs. Junction Temperature
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
= 10 V
= 10.6 A
GS
I
D
-50
-25
0
T
25
50
75
100 125 150
- Junction Temperature (_C)
J
Document Number: 72133
S-03597—Rev. A, 31-Mar-03
www.vishay.com
3
Si4441EDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source−Drain Diode Forward Voltage
On−Resistance vs. Gate−to−Source Voltage
0.10
40
0.08
0.06
0.04
0.02
0.00
T
= 150_C
J
10
I
D
= 10.6 A
T
= 25_C
J
1
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
0.4
80
60
I
D
= 250 mA
0.2
40
20
0.0
-0.2
-0.4
0
-2
-1
-50
-25
0
25
50
75
100 125 150
10
10
1
10
100
1000
Time (sec)
T
- Temperature (_C)
J
Safe Operating Area
100
r
Limited
I
Limited
DS(on)
DM
P(t) = 0.0001
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
T
A
= 25_C
0.1
Single Pulse
BV
DSS
Limited
10
0.01
0.1
1
100
V
DS
- Drain-to-Source Voltage (V)
Document Number: 72133
S-03597—Rev. A, 31-Mar-03
www.vishay.com
4
Si4441EDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72133
S-03597—Rev. A, 31-Mar-03
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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