SIDC05D65C8 [INFINEON]
发射极控制二极管是英飞凌独特的快速恢复二极管技术。超薄晶圆和场终止技术通过软恢复降低了 IGBT 的通电损耗，使发射极控制二极管非常适用于消费者和工业应用。发射极控制二极管针对英飞凌 IGBT 技术进行了优化。;
| 型号： | SIDC05D65C8 |
| 厂家： | 
Infineon |
| 描述： | 发射极控制二极管是英飞凌独特的快速恢复二极管技术。超薄晶圆和场终止技术通过软恢复降低了 IGBT 的通电损耗，使发射极控制二极管非常适用于消费者和工业应用。发射极控制二极管针对英飞凌 IGBT 技术进行了优化。 软恢复二极管 快速软恢复二极管 快速恢复二极管 双极性晶体管 |
| 文件： | 总4页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIDC05D65C8
Fast switching diode chip in EMCON 3 -Technology
A
Recommended for:
Features:
•
•
Power module
•
•
•
•
•
650V EMCON 3 technology 65 µm chip
Discrete components
Soft, fast switching
C
Low reverse recovery charge
Small temperature coefficient
Qualified according to JEDEC for target
applications
Applications:
•
•
•
Drives
White goods
Resonant applications
1 )
Chip Type
SIDC05D65C8
VR
IFn
Die Size
Package
sawn on foil
650V 15A
1.9 x 2.37 mm2
1 ) nominal forward current at Tc = 100°C, not subject to production test - verified by design/characterisation
Mechanical Parameters
Die size
1.9 x 2.37
4.5
mm2
Area total
Anode pad size
Thickness
1.15 x 1.45
65
µm
Wafer size
200
mm
Max. possible chips per wafer
Passivation frontside
Pad metal
6224
Photoimide
3200 nm AlSiCu
Ni Ag –system
Backside metal
Die bond
Electrically conductive epoxy glue and soft solder
Wire bond
Al, ≤500µm
Reject ink dot size
0.65mm; max 1.2mm
for original and
Ambient atmosphere air, Temperature 17°C – 25°C,
< 6 month
sealed MBB bags
Storage environment
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
for open MBB bags
Edited by INFINEON Technologies, IFAG IMM PSD D, L4016C, Edition 1.0, 12.09.2011
SIDC05D65C8
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
Continuous forward current
VRRM
IF
Tvj = 25 °C
Tvj < 150°C
Tvj < 150°C
650
1 )
V
A
)
Maximum repetitive forward current² IFRM
30
Operating junction temperature Tvj
-40...+175
°C
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterisation
Static Characteristics (tested on wafer), Tvj = 25 °C
Value
typ.
Parameter
Symbol
IR
Conditions
Unit
min.
max.
0.18
Reverse leakage current
VR=650V
IR=0.25mA
IF=15A
µA
Cathode-Anode breakdown
Voltage
VBR
VF
650
V
Forward voltage drop
1.23
1.55
1.87
Electrical Characteristics (not subject to production test - verified by design/characterization)
Value
typ.
Parameter
Symbol
VF
Conditions
Unit
min.
max.
Forward voltage drop
IF=15A, Tvj = 150°C
1.5
V
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
tbd
tbd
Edited by INFINEON Technologies, IFAG IMM PSD D, L4016C, Edition 1.0, 12.09.2011
SIDC05D65C8
Chip Drawing
A
A: Anode pad
Edited by INFINEON Technologies, IFAG IMM PSD D, L4016C, Edition 1.0, 12.09.2011
SIDC05D65C8
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Version
Subjects (major changes since last revision)
Date
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
Edited by INFINEON Technologies, IFAG IMM PSD D, L4016C, Edition 1.0, 12.09.2011
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