SIDC06D60AC6X1SA1 [INFINEON]

Rectifier Diode, 1 Phase, 1 Element, 20A, 600V V(RRM), Silicon, 2.85 X 2 MM, DIE-1;


型号：	SIDC06D60AC6X1SA1
厂家：	Infineon
描述：	Rectifier Diode, 1 Phase, 1 Element, 20A, 600V V(RRM), Silicon, 2.85 X 2 MM, DIE-1 软恢复二极管快速软恢复二极管
文件：	总4页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SIDC06D60AC6

Fast switching diode chip in EMCON 3 -Technology

FEATURES:

This chip is used for:

600V EMCON 3 technology 70 µm chip

soft, fast switching

low reverse recovery charge

small temperature coefficient

power module

discrete components

Applications:

drives

white goods

resonant applications

Chip Type

V_R

I_F

Die Size

Package

2.85 x 2 mm²

sawn on foil

SIDC06D60AC6

600V

20A

MECHANICAL PARAMETER:

Raster size

2.85 x 2

5.70 / 3.86

2.43 x 1.58

mm²

Area total / active

Anode pad size

Thickness

µm

deg

Wafer size

150

Flat position

180

Max. possible chips per wafer

Passivation frontside

Anode metallization

2574 pcs

Photoimide

3200 nm AlSiCu

Ni Ag –system

Cathode metallization

Die bond

suitable for epoxy and soft solder die bonding

electrically conductive glue or solder

Wire bond

Al, £500µm

Reject ink dot size

Æ 0.65mm; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended storage environment

Edited by INFINEON Technologies, AIM PMD D CID CLS, L4981M, Edition 1.1, 10.07.2006

SIDC06D60AC6

Maximum Ratings

Parameter

Symbol

Condition

Value

Unit

Repetitive peak reverse voltage

V_{R R M}

600

Continuous forward current limited by

1 )

I_F

jmax

Maximum repetitive forward current

I_{F R M}

limited by T

jmax

Operating junction and storage

temperature

T_j, T_{s t g}

-40...+175

°C

^{1 )}depending on thermal properties of assembly

Static Electrical Characteristics (tested on chip), T =25 °C, unless otherwise specified

Value

Typ.

Parameter

Symbol

I_R

Unit

Conditions

min.

max.

Reverse leakage current

V_R= 600V

µA

T_j=25 ° C

Cathode-Anode

breakdown Voltage

V_Br

V_F

I_R= 0.25mA

I_F=20 A

T_j=25°C

600

Forward voltage drop

1.25

1.6

1.95

T_j=25 ° C

Dynamic Electrical Characteristics (verified by design/characterization), inductive load

Value

Parameter

Symbol

Unit

Conditions

min.

Typ.

max.

I_F=20A

Peak reverse recovery

current

T_j= 25 °C

T_j= 125 °C

T_j= 150 °C

30.0

di/dt=1800A/ ms

V_R=300V

32.0

34.0

I_{R M}

V_GE= -15V

I_F=20A

Recovered charge

T_j= 25 °C

T_j= 125 °C

T_j= 150 °C

1.00

1.75

2.20

di/dt=1800A/ ms

V_R=300V

Q_r

µC

V_GE= -15V

I_F=20A

Reverse recovery energy

T_j= 25 °C

T_j= 125 °C

T_j= 150 °C

0.21

0.37

0.47

di/dt=1800A/ ms

V_R=300V

E_rec

V_GE= -15V

²⁾values also influenced by parasitic L- and C- in measurement and package.

Edited by INFINEON Technologies, AIM PMD D CID CLS, L4981M, Edition 1.1, 10.07.2006

SIDC06D60AC6

CHIP DRAWING:

Edited by INFINEON Technologies, AIM PMD D CID CLS, L4981M, Edition 1.1, 10.07.2006

SIDC06D60AC6

FURTHER ELECTRICAL CHARACTERISTICS:

This chip data sheet refers to the

device data sheet

FS20R06VE3

Description:

AQL 0,65 for visual inspection according to failure catalog

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Test-Normen Villach/Prüffeld

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see

address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types

in question please contact your nearest Infineon Technologies Office.

Infineon Technologies components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or

system. Life support devices or systems are intended to be implanted in the human body, or to support

and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the

health of the user or other persons may be endangered.

Edited by INFINEON Technologies, AIM PMD D CID CLS, L4981M, Edition 1.1, 10.07.2006

SIDC06D60AC6X1SA1 [INFINEON]

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