SIDC06D60C6X1SA3 [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 20A, 600V V(RRM), Silicon, 2.34 X 2.42 MM, DIE-1;型号: | SIDC06D60C6X1SA3 |
厂家: | Infineon |
描述: | Rectifier Diode, 1 Phase, 1 Element, 20A, 600V V(RRM), Silicon, 2.34 X 2.42 MM, DIE-1 软恢复二极管 快速软恢复二极管 |
文件: | 总4页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SIDC06D60C6
Fast switching diode chip in EMCON 3 -Technology
A
C
FEATURES:
This chip is used for:
·
·
·
·
600V EMCON 3 technology 70 µm chip
soft, fast switching
low reverse recovery charge
small temperature coefficient
·
·
power module
discrete components
Applications:
·
·
·
drives
white goods
resonant applications
Chip Type
VR
IF
Die Size
Package
2.34 x 2.42 mm2
sawn on foil
SIDC06D60C6
600V
20A
MECHANICAL PARAMETER:
Raster size
2.34 x 2.42
mm2
Area total / active
Anode pad size
Thickness
5.66 / 3.85
1.92 x 2
70
µm
mm
deg
Wafer size
150
Flat position
180
Max. possible chips per wafer
Passivation frontside
Anode metallization
2581 pcs
Photoimide
3200 nm AlSiCu
Ni Ag –system
Cathode metallization
Die bond
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Wire bond
Al, £500µm
Reject ink dot size
Æ 0.65mm; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended storage environment
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4541M, Edition 1.1, 10.07.2006
SIDC06D60C6
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
VR R M
600
V
Continuous forward current limited by
1 )
IF
A
T
jmax
Maximum repetitive forward current
IF R M
40
limited by T
jmax
Operating junction and storage
temperature
Tj , Ts t g
-40...+175
°C
1 ) depending on thermal properties of assembly
Static Electrical Characteristics (tested on chip), T =25 °C, unless otherwise specified
j
Value
Typ.
Parameter
Symbol
IR
Unit
Conditions
min.
max.
27
Reverse leakage current
VR= 600V
µA
V
Tj=25 ° C
Cathode-Anode
breakdown Voltage
VBr
VF
IR= 0.25mA
IF=20 A
Tj=25°C
600
Forward voltage drop
1.25
1.6
1.95
V
Tj=25 ° C
Dynamic Electrical Characteristics (verified by design/characterization), inductive load
2)
Value
Parameter
Symbol
Unit
Conditions
min.
Typ.
max.
IF=20A
Peak reverse recovery
current
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
30.0
di/dt=1800A/ ms
VR=300V
32.0
34.0
IR M
A
VGE = -15V
IF=20A
Recovered charge
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
1.00
1.75
2.20
di/dt=1800A/ ms
VR=300V
Qr
µC
mJ
VGE = -15V
IF=20A
Reverse recovery energy
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
0.21
0.37
0.47
di/dt=1800A/ ms
VR=300V
Erec
VGE = -15V
2) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4541M, Edition 1.1, 10.07.2006
SIDC06D60C6
CHIP DRAWING:
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4541M, Edition 1.1, 10.07.2006
SIDC06D60C6
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
FS20R06VE3
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4541M, Edition 1.1, 10.07.2006
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INFINEON
SIDC07D60E6X1SA1
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, 2.65 X 2.65 MM, DIE-1
INFINEON
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