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元器件品牌
SIGC06T60GSE
[INFINEON]
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel,;
元器件型号:
SIGC06T60GSE
生产厂家:
INFINEON TECHNOLOGIES AG
描述和应用:
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel,
晶体 晶体管 功率控制 双极性晶体管 栅
PDF文件:
总4页 (文件大小:77K)
下载文档:
下载PDF数据表文档文件
型号参数:SIGC06T60GSE参数
查看货源
SIGC06T60GSX1SA2
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 2.44 X 2.42 MM, DIE-2
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SIGC06T65E
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SIGC06T65GE
Insulated Gate Bipolar Transistor,
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SIGC07T60NC
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INFINEON
SIGC07T60SN
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, DIE-2
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INFINEON
SIGC07T60SNC
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
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INFINEON
SIGC07T60UN
High Speed IGBT Chip in NPT-technology positive temperature coefficient
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INFINEON
SIGC08T60
IGBT3 Chip
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156
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10
INFINEON
SIGC08T60E
暂无描述
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on line
156
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INFINEON
SIGC08T60S
IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient
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on line
156
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4
INFINEON
SIGC08T60SE
Insulated Gate Bipolar Transistor,
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156
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0
INFINEON
SIGC08T65E
Insulated Gate Bipolar Transistor
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156
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INFINEON
SIGC100T60R3
600V Trench & Field Stop technology positive temperature coefficient
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on line
156
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17
INFINEON
SIGC100T60R3
IGBT3 Chip
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156
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21
INFINEON
SIGC100T60R3_10
600V Trench & Field Stop technology positive temperature coefficient
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on line
156
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12
INFINEON
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