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SIGC10T60E [INFINEON]

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SIGC10T60E


元器件型号：	SIGC10T60E
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	暂无描述双极性晶体管
PDF文件：	总4页 (文件大小：76K)
下载文档：	下载PDF数据表文档文件
型号参数：SIGC10T60E参数

SIGC10T60S

IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

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8 INFINEON

SIGC10T60SE

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC10T60SX1SA2

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 3.19 X 3.21 MM, DIE-2

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0 INFINEON

SIGC10T60X1SA1

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 3.19 X 3.21 MM, DIE-2

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0 INFINEON

SIGC11T60NC

IGBT Chip in NPT-technology

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17 INFINEON

SIGC11T60SNC

IGBT Chip in NPT-technology

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5 INFINEON

SIGC121T120R2C

IGBT Chip in NPT-technology

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8 INFINEON

SIGC121T120R2CL

IGBT Chip in NPT-technology

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12 INFINEON

SIGC121T120R2CS

IGBT Chip in NPT-technology

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13 INFINEON

SIGC121T120R2CSX1SA6

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, DIE

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0 INFINEON

SIGC121T120R2CX1SA3

Insulated Gate Bipolar Transistor, 103A I(C), 1200V V(BR)CES, N-Channel, 11.08 X 11.08 MM, DIE-10

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0 INFINEON

SIGC121T60NR2C

IGBT Chip in NPT-technology

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15 INFINEON

SIGC121T60NR2C

IGBT Chip in NPT-technology

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8 INFINEON

SIGC128T170R3

IGBT3 Chip

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15 INFINEON

SIGC128T170R3E

Insulated Gate Bipolar Transistor

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0 INFINEON

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