SIGC121T120R2CSX1SA6 [INFINEON]

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, DIE;
SIGC121T120R2CSX1SA6
型号: SIGC121T120R2CSX1SA6
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, DIE

栅 功率控制 晶体管
文件: 总4页 (文件大小:67K)
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SIGC121T120R2CX1SA3

Insulated Gate Bipolar Transistor, 103A I(C), 1200V V(BR)CES, N-Channel, 11.08 X 11.08 MM, DIE-10

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0 INFINEON

SIGC121T60NR2C

IGBT Chip in NPT-technology

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15 INFINEON

SIGC121T60NR2C

IGBT Chip in NPT-technology

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8 INFINEON

SIGC128T170R3

IGBT3 Chip

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15 INFINEON

SIGC128T170R3E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC128T170R3EX1SA4

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC12T120

IGBT Chip

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6 INFINEON

SIGC12T120

IGBT Chip

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6 INFINEON

SIGC12T120E

暂无描述

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0 INFINEON

SIGC12T120L

IGBT3 Chip

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9 INFINEON

SIGC12T120LE

暂无描述

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0 INFINEON

SIGC12T60N

Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, DIE-3

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0 INFINEON

SIGC12T60NC

IGBT Chip in NPT-technology

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15 INFINEON

SIGC12T60SNC

IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient

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4 INFINEON

SIGC12T60SNCX1SA1

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.50 X 3.50 MM, DIE-2

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0 INFINEON