SIGC12T120L [INFINEON]

IGBT3 Chip; IGBT3芯片

SIGC12T120L


型号：	SIGC12T120L
厂家：	INFINEON TECHNOLOGIES AG
描述：	IGBT3 Chip IGBT3芯片双极性晶体管
文件：	总4页 (文件大小：71K)
下载：	下载PDF数据表文档文件

SIGC12T120LE

暂无描述

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0 INFINEON

SIGC12T60N

Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, DIE-3

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0 INFINEON

SIGC12T60NC

IGBT Chip in NPT-technology

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15 INFINEON

SIGC12T60SNC

IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient

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4 INFINEON

SIGC12T60SNCX1SA1

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.50 X 3.50 MM, DIE-2

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0 INFINEON

SIGC144T170C

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC144T170R2C

IGBT Chip in NPT-technology 1700V NPT technology 280 μm chip

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7 INFINEON

SIGC144T170R2C

IGBT Chip in NPT-technology

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9 INFINEON

SIGC144T170R2C_09

IGBT Chip in NPT-technology 1700V NPT technology 280 μm chip

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7 INFINEON

SIGC14T60N

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, DIE-2

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0 INFINEON

SIGC14T60NC

IGBT Chip in NPT-technology

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12 INFINEON

SIGC14T60SN

Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, DIE-2

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0 INFINEON

SIGC14T60SNC

IGBT Chip in NPT-technology 600V NPT technology 100μm chip short circuit prove

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10 INFINEON

SIGC14T60SNCX1SA4

Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, 3.80 X 3.80 MM, DIE-2

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0 INFINEON

SIGC156T120R2C

IGBT Chip in NPT-technology

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5 INFINEON

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