SIGC156T60SNR2C [INFINEON]

IGBT Chip in NPT-technology 600V NPT technology 100μm chip; IGBT芯片在NPT技术600V NPT技术100微米芯片
SIGC156T60SNR2C
型号: SIGC156T60SNR2C
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

IGBT Chip in NPT-technology 600V NPT technology 100μm chip
IGBT芯片在NPT技术600V NPT技术100微米芯片

双极性晶体管
文件: 总4页 (文件大小:80K)
下载:  下载PDF数据表文档文件

SIGC158T120R3

IGBT3 Chip

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10 INFINEON

SIGC158T120R3E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC158T120R3L

IGBT3 Chip

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5 INFINEON

SIGC158T120R3LE

暂无描述

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0 INFINEON

SIGC158T120R3LEX1SA6

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC158T170R3

IGBT3 Chip

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5 INFINEON

SIGC158T170R3E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC158T170R3EX1SA2

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC15T60

IGBT3 Chip

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33 INFINEON

SIGC15T60E

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC15T60S

IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

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11 INFINEON

SIGC15T60SE

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC15T60SX1SA1

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 3.92 X 3.88 MM, DIE-2

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0 INFINEON

SIGC15T60UN

High Speed IGBT Chip in NPT-technology positive temperature coefficient

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13 INFINEON

SIGC15T65E

Insulated Gate Bipolar Transistor

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0 INFINEON